TW200614436A - Semiconductor device and method of manufacturing the same - Google Patents
Semiconductor device and method of manufacturing the sameInfo
- Publication number
- TW200614436A TW200614436A TW094127001A TW94127001A TW200614436A TW 200614436 A TW200614436 A TW 200614436A TW 094127001 A TW094127001 A TW 094127001A TW 94127001 A TW94127001 A TW 94127001A TW 200614436 A TW200614436 A TW 200614436A
- Authority
- TW
- Taiwan
- Prior art keywords
- layers
- insulating layer
- manufacturing
- same
- semiconductor device
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US60039204P | 2004-08-11 | 2004-08-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200614436A true TW200614436A (en) | 2006-05-01 |
TWI282151B TWI282151B (en) | 2007-06-01 |
Family
ID=36867066
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094127001A TWI282151B (en) | 2004-08-11 | 2005-08-09 | Semiconductor device and method of manufacturing the same |
Country Status (3)
Country | Link |
---|---|
US (1) | US7348625B2 (zh) |
CN (1) | CN1805145B (zh) |
TW (1) | TWI282151B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7948799B2 (en) * | 2006-05-23 | 2011-05-24 | Macronix International Co., Ltd. | Structure and method of sub-gate NAND memory with bandgap engineered SONOS devices |
US7718491B2 (en) * | 2006-06-16 | 2010-05-18 | Macronix International Co., Ltd. | Method for making a NAND Memory device with inversion bit lines |
SG10201700467UA (en) * | 2010-02-07 | 2017-02-27 | Zeno Semiconductor Inc | Semiconductor memory device having electrically floating body transistor, and having both volatile and non-volatile functionality and method |
TWI555131B (zh) * | 2014-03-18 | 2016-10-21 | 力晶科技股份有限公司 | Nor型快閃記憶體及其製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100378688B1 (ko) | 2001-06-28 | 2003-04-07 | 주식회사 하이닉스반도체 | 반도체소자의 제조방법 |
JP4412903B2 (ja) * | 2002-06-24 | 2010-02-10 | 株式会社ルネサステクノロジ | 半導体装置 |
TWI284348B (en) | 2002-07-01 | 2007-07-21 | Macronix Int Co Ltd | Method for fabricating raised source/drain of semiconductor device |
US6727136B1 (en) | 2002-10-18 | 2004-04-27 | Advanced Micro Devices, Inc. | Formation of ultra-shallow depth source/drain extensions for MOS transistors |
JP2004152977A (ja) * | 2002-10-30 | 2004-05-27 | Renesas Technology Corp | 半導体記憶装置 |
JP2005085903A (ja) * | 2003-09-05 | 2005-03-31 | Renesas Technology Corp | 半導体装置およびその製造方法 |
US6878988B1 (en) * | 2004-06-02 | 2005-04-12 | United Microelectronics Corp. | Non-volatile memory with induced bit lines |
-
2005
- 2005-08-02 US US11/194,545 patent/US7348625B2/en not_active Expired - Fee Related
- 2005-08-09 TW TW094127001A patent/TWI282151B/zh active
- 2005-08-11 CN CN200510091617.XA patent/CN1805145B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7348625B2 (en) | 2008-03-25 |
CN1805145A (zh) | 2006-07-19 |
TWI282151B (en) | 2007-06-01 |
CN1805145B (zh) | 2010-05-05 |
US20060033149A1 (en) | 2006-02-16 |
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