TW200511411A - Wafer back surface treating method and dicing sheet adhering apparatus - Google Patents

Wafer back surface treating method and dicing sheet adhering apparatus

Info

Publication number
TW200511411A
TW200511411A TW093108866A TW93108866A TW200511411A TW 200511411 A TW200511411 A TW 200511411A TW 093108866 A TW093108866 A TW 093108866A TW 93108866 A TW93108866 A TW 93108866A TW 200511411 A TW200511411 A TW 200511411A
Authority
TW
Taiwan
Prior art keywords
wafer
dicing sheet
back surface
treating method
surface treating
Prior art date
Application number
TW093108866A
Other languages
English (en)
Other versions
TWI346977B (en
Inventor
Yuji Okawa
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Publication of TW200511411A publication Critical patent/TW200511411A/zh
Application granted granted Critical
Publication of TWI346977B publication Critical patent/TWI346977B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
TW093108866A 2003-05-29 2004-03-31 Wafer back surface treating method and dicing sheet adhering apparatus TWI346977B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003152344A JP4614416B2 (ja) 2003-05-29 2003-05-29 半導体チップの製造方法およびダイシング用シート貼付け装置

Publications (2)

Publication Number Publication Date
TW200511411A true TW200511411A (en) 2005-03-16
TWI346977B TWI346977B (en) 2011-08-11

Family

ID=33447791

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093108866A TWI346977B (en) 2003-05-29 2004-03-31 Wafer back surface treating method and dicing sheet adhering apparatus

Country Status (5)

Country Link
US (1) US7217638B2 (zh)
JP (1) JP4614416B2 (zh)
KR (1) KR101057298B1 (zh)
CN (1) CN100411105C (zh)
TW (1) TWI346977B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI413202B (zh) * 2008-06-23 2013-10-21 Taiwan Semiconductor Mfg 半導體製造系統，界面系統，承載器，半導體晶圓容器，吸附裝置
TWI510682B (zh) * 2011-01-28 2015-12-01 Sino American Silicon Prod Inc 晶棒表面奈米化製程、晶圓製造方法及其晶圓

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4523252B2 (ja) * 2003-09-08 2010-08-11 株式会社ディスコ 半導体ウエーハの加工方法および加工装置
CN101290907B (zh) * 2003-12-26 2010-12-08 瑞萨电子株式会社 半导体集成电路器件的制造方法
JP4800778B2 (ja) * 2005-05-16 2011-10-26 日東電工株式会社 ダイシング用粘着シート及びそれを用いた被加工物の加工方法
JP4851132B2 (ja) * 2005-07-20 2012-01-11 株式会社ディスコ 加工装置及び加工方法
JP2007214268A (ja) * 2006-02-08 2007-08-23 Seiko Instruments Inc 半導体装置の製造方法
JP4799205B2 (ja) * 2006-02-16 2011-10-26 日東電工株式会社 活性面貼付ダイシング用粘着テープ又はシートおよび被加工物の切断片のピックアップ方法
JP4970863B2 (ja) * 2006-07-13 2012-07-11 日東電工株式会社 被加工物の加工方法
US20080020549A1 (en) * 2006-07-20 2008-01-24 Qc Solutions, Inc. Method and apparatus for forming an oxide layer on semiconductors
JP4931519B2 (ja) * 2006-09-01 2012-05-16 日東電工株式会社 活性面貼付ダイシング用粘着テープ又はシートおよび被加工物の切断片のピックアップ方法
US7901485B2 (en) * 2007-07-11 2011-03-08 Mccutchen Co. Radial counterflow carbon capture and flue gas scrubbing
US8025801B2 (en) * 2007-08-16 2011-09-27 Mccutchen Co. Radial counterflow inductive desalination
KR100968070B1 (ko) * 2009-04-02 2010-07-08 주식회사 디에스케이 Ａｃｆ 접착장치 및 이를 이용한 접착방법
US8859393B2 (en) 2010-06-30 2014-10-14 Sunedison Semiconductor Limited Methods for in-situ passivation of silicon-on-insulator wafers
CN102427097B (zh) * 2011-11-23 2014-05-07 中国科学院物理研究所 一种硅的氧化钝化方法及钝化装置
US10537840B2 (en) 2017-07-31 2020-01-21 Vorsana Inc. Radial counterflow separation filter with focused exhaust
JP7404007B2 (ja) * 2019-09-11 2023-12-25 株式会社ディスコ ウエーハの加工方法
CN111128879A (zh) * 2019-12-27 2020-05-08 青岛歌尔微电子研究院有限公司 晶圆及其切割方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001118821A (ja) * 1991-12-11 2001-04-27 Sony Corp 洗浄方法
JPH08139067A (ja) * 1994-11-07 1996-05-31 Nitto Denko Corp 半導体ウエハに付着した異物の除去用粘着テ―プと除去方法
KR960043037A (ko) * 1995-05-29 1996-12-21 김광호 접촉식 서머척 및 그 제조방법
TW311927B (zh) * 1995-07-11 1997-08-01 Minnesota Mining & Mfg
JP3543573B2 (ja) * 1997-10-17 2004-07-14 セイコーエプソン株式会社 電子部品の実装方法およびチップの実装方法
JPH11297648A (ja) * 1998-04-07 1999-10-29 Denso Corp 半導体ウェハの製造方法およびその製造装置
JPH11307485A (ja) * 1998-04-21 1999-11-05 Super Silicon Kenkyusho:Kk 半導体ウエハ研磨方法、半導体ウエハ研磨装置、及び研磨ウエハ
JP2001313350A (ja) * 2000-04-28 2001-11-09 Sony Corp チップ状電子部品及びその製造方法、並びにその製造に用いる疑似ウエーハ及びその製造方法
JP2003007646A (ja) 2001-06-18 2003-01-10 Nitto Denko Corp ダイシング用粘着シートおよび切断片の製造方法
JP4180306B2 (ja) * 2001-06-26 2008-11-12 アルプス電気株式会社 ウエット処理ノズルおよびウエット処理装置
US6812064B2 (en) * 2001-11-07 2004-11-02 Micron Technology, Inc. Ozone treatment of a ground semiconductor die to improve adhesive bonding to a substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI413202B (zh) * 2008-06-23 2013-10-21 Taiwan Semiconductor Mfg 半導體製造系統，界面系統，承載器，半導體晶圓容器，吸附裝置
TWI510682B (zh) * 2011-01-28 2015-12-01 Sino American Silicon Prod Inc 晶棒表面奈米化製程、晶圓製造方法及其晶圓

Also Published As

Publication number Publication date
JP2004356384A (ja) 2004-12-16
KR101057298B1 (ko) 2011-08-16
CN1574233A (zh) 2005-02-02
KR20040103434A (ko) 2004-12-08
TWI346977B (en) 2011-08-11
US20040242002A1 (en) 2004-12-02
CN100411105C (zh) 2008-08-13
US7217638B2 (en) 2007-05-15
JP4614416B2 (ja) 2011-01-19

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees