SU400139A1 - Фонд вноертш - Google Patents
Фонд вноертшInfo
- Publication number
- SU400139A1 SU400139A1 SU1670901A SU1670901A SU400139A1 SU 400139 A1 SU400139 A1 SU 400139A1 SU 1670901 A SU1670901 A SU 1670901A SU 1670901 A SU1670901 A SU 1670901A SU 400139 A1 SU400139 A1 SU 400139A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- materials
- boundary layers
- single crystals
- layers
- vnoertsh
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicates, Zeolites, And Molecular Sieves (AREA)
Description
Изобретение может использоватьс при выраи;иБапии монокристаллов любыми способами , осиованными на применении монокрнсталлических затравок.
Известны способы выращивани монокристаллов па затравках, которые не устран ют дефектности используемых монокристаллических заправок.
Дл получени бездефектных монокристаллов с повышенной степенью совершенства реальной структуры предлагаетс затравкп предварительно покрывать граиичнрзгми сло ми из материалов, отличных от материалов затравок. Дл более эффективного теплоотвода в начале роста и использовани максимальной толн1ины граничных слоев, обладаюпцих информационными свойствами, в качестве материалов дл граничных слоев пспользуют .металлы.
Пример 1. Монокристаллы содалита выращивают гидротермальнььм методом через граничные полнкристаллические слои из золота толщиной 1500 А, нанесенные методом вакуумного испарени .
Пример 2. Монокристаллы сернистого свиица выращивают из газовой фазы через
2
Граничные слои из аморфного углерода толщиной 100 Л.
Монокристаллы, выращенные через граиичные слон, отличаютс более .высокой стененью совериюнства структуры и, в частности, характеризуютс меиьши.м колпчество.м макрон микротрещин, чем выращенные на затравках без граничных слоев.
10
Предмет изобретени
Claims (2)
1.Способ выращивани монокристаллов иа затравках, отличающийс тем, что, с целью получени бездефектных монокристаллов с повьииенной степеш ю совершенства реальной структуры, затравки предварительно нокрывают граничными сло .ми из материалов, отличных от материалов затравок.
2.Способ по п. 1, о т л и ч а ю щ и и с тем, что, с целью более эффективного теплоотвода в начале роста и использовани максимальной толпищы граничных слоев, обладаюи-,их информационными свойствами, в качестве материалов дл граничных слоев используют металлы.
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU1670901A SU400139A1 (ru) | 1971-07-07 | 1971-07-07 | Фонд вноертш |
CH1010272A CH572764A5 (ru) | 1971-07-07 | 1972-07-05 | |
NL7209445A NL7209445A (ru) | 1971-07-07 | 1972-07-06 | |
DD164241A DD98458A1 (ru) | 1971-07-07 | 1972-07-06 | |
IT26720/72A IT972156B (it) | 1971-07-07 | 1972-07-06 | Metodo di accrescimento di un mono cristallo su di un germe monocri stallino |
DE2233259A DE2233259C3 (de) | 1971-07-07 | 1972-07-06 | Verfahren zur Züchtung von Einkristalls |
GB3156872A GB1393619A (en) | 1971-07-07 | 1972-07-06 | Method of growing a single-crystal |
FR7224729A FR2144881B1 (ru) | 1971-07-07 | 1972-07-07 | |
US00269884A US3853596A (en) | 1971-07-07 | 1972-07-07 | Method of growing a single-crystal on a single-crystal seed |
CS4843A CS163478B1 (ru) | 1971-07-07 | 1972-07-07 | |
JP6812372A JPS5320474B2 (ru) | 1971-07-07 | 1972-07-07 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU1670901A SU400139A1 (ru) | 1971-07-07 | 1971-07-07 | Фонд вноертш |
Publications (1)
Publication Number | Publication Date |
---|---|
SU400139A1 true SU400139A1 (ru) | 1974-02-25 |
Family
ID=20479528
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SU1670901A SU400139A1 (ru) | 1971-07-07 | 1971-07-07 | Фонд вноертш |
Country Status (11)
Country | Link |
---|---|
US (1) | US3853596A (ru) |
JP (1) | JPS5320474B2 (ru) |
CH (1) | CH572764A5 (ru) |
CS (1) | CS163478B1 (ru) |
DD (1) | DD98458A1 (ru) |
DE (1) | DE2233259C3 (ru) |
FR (1) | FR2144881B1 (ru) |
GB (1) | GB1393619A (ru) |
IT (1) | IT972156B (ru) |
NL (1) | NL7209445A (ru) |
SU (1) | SU400139A1 (ru) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3976535A (en) * | 1975-05-27 | 1976-08-24 | Bell Telephone Laboratories, Incorporated | Screening seeds for quartz growth |
FR2354810A1 (fr) * | 1976-06-14 | 1978-01-13 | Anvar | Couches monocristallines, procedes de fabrication de telles couches, et structures comportant une couche monocristalline |
US4487651A (en) * | 1983-04-06 | 1984-12-11 | Duracell Inc. | Method for making irregular shaped single crystal particles and the use thereof in anodes for electrochemical cells |
US4722763A (en) * | 1986-12-23 | 1988-02-02 | Duracell Inc. | Method for making irregular shaped single crystal particles for use in anodes for electrochemical cells |
JP3245866B2 (ja) * | 1996-02-29 | 2002-01-15 | 住友金属工業株式会社 | 単結晶引き上げ方法及び単結晶引き上げ装置 |
JP3209082B2 (ja) * | 1996-03-06 | 2001-09-17 | セイコーエプソン株式会社 | 圧電体薄膜素子及びその製造方法、並びにこれを用いたインクジェット式記録ヘッド |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1998334A (en) * | 1931-08-13 | 1935-04-16 | Gen Electric | Electric radiation indicator |
US2782676A (en) * | 1952-03-01 | 1957-02-26 | American Optical Corp | Reflection reduction coatings and method for coating same |
US2895858A (en) * | 1955-06-21 | 1959-07-21 | Hughes Aircraft Co | Method of producing semiconductor crystal bodies |
DE1259838B (de) * | 1955-08-16 | 1968-02-01 | Siemens Ag | Verfahren zum Herstellen von Halbleiterkristallen |
NL278562A (ru) * | 1961-05-19 | |||
US3399072A (en) * | 1963-03-04 | 1968-08-27 | North American Rockwell | Magnetic materials |
US3372069A (en) * | 1963-10-22 | 1968-03-05 | Texas Instruments Inc | Method for depositing a single crystal on an amorphous film, method for manufacturing a metal base transistor, and a thin-film, metal base transistor |
US3574679A (en) * | 1965-01-25 | 1971-04-13 | North American Rockwell | Process for embedding or encircling polycrystalline materials in single crystal material |
US3518636A (en) * | 1965-01-26 | 1970-06-30 | North American Rockwell | Ferrite memory device |
US3498836A (en) * | 1966-04-25 | 1970-03-03 | Ibm | Method for obtaining single crystal ferrite films |
US3433684A (en) * | 1966-09-13 | 1969-03-18 | North American Rockwell | Multilayer semiconductor heteroepitaxial structure |
NL6810036A (ru) * | 1967-08-16 | 1969-02-18 | ||
DE1789064A1 (de) * | 1968-09-30 | 1971-12-30 | Siemens Ag | Verfahren zum Herstellen epitaktischer Schichten aus elektrisch isolierendem Material unter Verwendung eines aus Halbleitermaterial bestehenden Traegerkoerpers |
-
1971
- 1971-07-07 SU SU1670901A patent/SU400139A1/ru active
-
1972
- 1972-07-05 CH CH1010272A patent/CH572764A5/xx not_active IP Right Cessation
- 1972-07-06 GB GB3156872A patent/GB1393619A/en not_active Expired
- 1972-07-06 NL NL7209445A patent/NL7209445A/xx unknown
- 1972-07-06 DD DD164241A patent/DD98458A1/xx unknown
- 1972-07-06 DE DE2233259A patent/DE2233259C3/de not_active Expired
- 1972-07-06 IT IT26720/72A patent/IT972156B/it active
- 1972-07-07 JP JP6812372A patent/JPS5320474B2/ja not_active Expired
- 1972-07-07 US US00269884A patent/US3853596A/en not_active Expired - Lifetime
- 1972-07-07 FR FR7224729A patent/FR2144881B1/fr not_active Expired
- 1972-07-07 CS CS4843A patent/CS163478B1/cs unknown
Also Published As
Publication number | Publication date |
---|---|
JPS5320474B2 (ru) | 1978-06-27 |
JPS4928581A (ru) | 1974-03-14 |
FR2144881A1 (ru) | 1973-02-16 |
US3853596A (en) | 1974-12-10 |
CH572764A5 (ru) | 1976-02-27 |
DE2233259C3 (de) | 1981-09-10 |
CS163478B1 (ru) | 1975-09-15 |
DE2233259A1 (de) | 1973-01-25 |
IT972156B (it) | 1974-05-20 |
DD98458A1 (ru) | 1973-06-20 |
DE2233259B2 (de) | 1981-01-22 |
NL7209445A (ru) | 1973-01-09 |
GB1393619A (en) | 1975-05-07 |
FR2144881B1 (ru) | 1976-08-06 |
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