SU400139A1 - Фонд вноертш - Google Patents

Фонд вноертш

Info

Publication number
SU400139A1
SU400139A1 SU1670901A SU1670901A SU400139A1 SU 400139 A1 SU400139 A1 SU 400139A1 SU 1670901 A SU1670901 A SU 1670901A SU 1670901 A SU1670901 A SU 1670901A SU 400139 A1 SU400139 A1 SU 400139A1
Authority
SU
USSR - Soviet Union
Prior art keywords
materials
boundary layers
single crystals
layers
vnoertsh
Prior art date
Application number
SU1670901A
Other languages
English (en)
Inventor
А. Н. Лобачев В. П. Власов О. К. Мельников Н. С. Триедина Ордена Трудового Красного Знамени институт кристаллографии А. В. Шубникова Г. И. Дистлер
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to SU1670901A priority Critical patent/SU400139A1/ru
Priority to CH1010272A priority patent/CH572764A5/xx
Priority to IT26720/72A priority patent/IT972156B/it
Priority to NL7209445A priority patent/NL7209445A/xx
Priority to DD164241A priority patent/DD98458A1/xx
Priority to DE2233259A priority patent/DE2233259C3/de
Priority to GB3156872A priority patent/GB1393619A/en
Priority to FR7224729A priority patent/FR2144881B1/fr
Priority to US00269884A priority patent/US3853596A/en
Priority to CS4843A priority patent/CS163478B1/cs
Priority to JP6812372A priority patent/JPS5320474B2/ja
Application granted granted Critical
Publication of SU400139A1 publication Critical patent/SU400139A1/ru

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicates, Zeolites, And Molecular Sieves (AREA)

Description

Изобретение может использоватьс  при выраи;иБапии монокристаллов любыми способами , осиованными на применении монокрнсталлических затравок.
Известны способы выращивани  монокристаллов па затравках, которые не устран ют дефектности используемых монокристаллических заправок.
Дл  получени  бездефектных монокристаллов с повышенной степенью совершенства реальной структуры предлагаетс  затравкп предварительно покрывать граиичнрзгми сло ми из материалов, отличных от материалов затравок. Дл  более эффективного теплоотвода в начале роста и использовани  максимальной толн1ины граничных слоев, обладаюпцих информационными свойствами, в качестве материалов дл  граничных слоев пспользуют .металлы.
Пример 1. Монокристаллы содалита выращивают гидротермальнььм методом через граничные полнкристаллические слои из золота толщиной 1500 А, нанесенные методом вакуумного испарени .
Пример 2. Монокристаллы сернистого свиица выращивают из газовой фазы через
2
Граничные слои из аморфного углерода толщиной 100 Л.
Монокристаллы, выращенные через граиичные слон, отличаютс  более .высокой стененью совериюнства структуры и, в частности, характеризуютс  меиьши.м колпчество.м макрон микротрещин, чем выращенные на затравках без граничных слоев.
10
Предмет изобретени 

Claims (2)

1.Способ выращивани  монокристаллов иа затравках, отличающийс  тем, что, с целью получени  бездефектных монокристаллов с повьииенной степеш ю совершенства реальной структуры, затравки предварительно нокрывают граничными сло .ми из материалов, отличных от материалов затравок.
2.Способ по п. 1, о т л и ч а ю щ и и с   тем, что, с целью более эффективного теплоотвода в начале роста и использовани  максимальной толпищы граничных слоев, обладаюи-,их информационными свойствами, в качестве материалов дл  граничных слоев используют металлы.
SU1670901A 1971-07-07 1971-07-07 Фонд вноертш SU400139A1 (ru)

Priority Applications (11)

Application Number Priority Date Filing Date Title
SU1670901A SU400139A1 (ru) 1971-07-07 1971-07-07 Фонд вноертш
CH1010272A CH572764A5 (ru) 1971-07-07 1972-07-05
NL7209445A NL7209445A (ru) 1971-07-07 1972-07-06
DD164241A DD98458A1 (ru) 1971-07-07 1972-07-06
IT26720/72A IT972156B (it) 1971-07-07 1972-07-06 Metodo di accrescimento di un mono cristallo su di un germe monocri stallino
DE2233259A DE2233259C3 (de) 1971-07-07 1972-07-06 Verfahren zur Züchtung von Einkristalls
GB3156872A GB1393619A (en) 1971-07-07 1972-07-06 Method of growing a single-crystal
FR7224729A FR2144881B1 (ru) 1971-07-07 1972-07-07
US00269884A US3853596A (en) 1971-07-07 1972-07-07 Method of growing a single-crystal on a single-crystal seed
CS4843A CS163478B1 (ru) 1971-07-07 1972-07-07
JP6812372A JPS5320474B2 (ru) 1971-07-07 1972-07-07

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU1670901A SU400139A1 (ru) 1971-07-07 1971-07-07 Фонд вноертш

Publications (1)

Publication Number Publication Date
SU400139A1 true SU400139A1 (ru) 1974-02-25

Family

ID=20479528

Family Applications (1)

Application Number Title Priority Date Filing Date
SU1670901A SU400139A1 (ru) 1971-07-07 1971-07-07 Фонд вноертш

Country Status (11)

Country Link
US (1) US3853596A (ru)
JP (1) JPS5320474B2 (ru)
CH (1) CH572764A5 (ru)
CS (1) CS163478B1 (ru)
DD (1) DD98458A1 (ru)
DE (1) DE2233259C3 (ru)
FR (1) FR2144881B1 (ru)
GB (1) GB1393619A (ru)
IT (1) IT972156B (ru)
NL (1) NL7209445A (ru)
SU (1) SU400139A1 (ru)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3976535A (en) * 1975-05-27 1976-08-24 Bell Telephone Laboratories, Incorporated Screening seeds for quartz growth
FR2354810A1 (fr) * 1976-06-14 1978-01-13 Anvar Couches monocristallines, procedes de fabrication de telles couches, et structures comportant une couche monocristalline
US4487651A (en) * 1983-04-06 1984-12-11 Duracell Inc. Method for making irregular shaped single crystal particles and the use thereof in anodes for electrochemical cells
US4722763A (en) * 1986-12-23 1988-02-02 Duracell Inc. Method for making irregular shaped single crystal particles for use in anodes for electrochemical cells
JP3245866B2 (ja) * 1996-02-29 2002-01-15 住友金属工業株式会社 単結晶引き上げ方法及び単結晶引き上げ装置
JP3209082B2 (ja) * 1996-03-06 2001-09-17 セイコーエプソン株式会社 圧電体薄膜素子及びその製造方法、並びにこれを用いたインクジェット式記録ヘッド

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1998334A (en) * 1931-08-13 1935-04-16 Gen Electric Electric radiation indicator
US2782676A (en) * 1952-03-01 1957-02-26 American Optical Corp Reflection reduction coatings and method for coating same
US2895858A (en) * 1955-06-21 1959-07-21 Hughes Aircraft Co Method of producing semiconductor crystal bodies
DE1259838B (de) * 1955-08-16 1968-02-01 Siemens Ag Verfahren zum Herstellen von Halbleiterkristallen
NL278562A (ru) * 1961-05-19
US3399072A (en) * 1963-03-04 1968-08-27 North American Rockwell Magnetic materials
US3372069A (en) * 1963-10-22 1968-03-05 Texas Instruments Inc Method for depositing a single crystal on an amorphous film, method for manufacturing a metal base transistor, and a thin-film, metal base transistor
US3574679A (en) * 1965-01-25 1971-04-13 North American Rockwell Process for embedding or encircling polycrystalline materials in single crystal material
US3518636A (en) * 1965-01-26 1970-06-30 North American Rockwell Ferrite memory device
US3498836A (en) * 1966-04-25 1970-03-03 Ibm Method for obtaining single crystal ferrite films
US3433684A (en) * 1966-09-13 1969-03-18 North American Rockwell Multilayer semiconductor heteroepitaxial structure
NL6810036A (ru) * 1967-08-16 1969-02-18
DE1789064A1 (de) * 1968-09-30 1971-12-30 Siemens Ag Verfahren zum Herstellen epitaktischer Schichten aus elektrisch isolierendem Material unter Verwendung eines aus Halbleitermaterial bestehenden Traegerkoerpers

Also Published As

Publication number Publication date
JPS5320474B2 (ru) 1978-06-27
JPS4928581A (ru) 1974-03-14
FR2144881A1 (ru) 1973-02-16
US3853596A (en) 1974-12-10
CH572764A5 (ru) 1976-02-27
DE2233259C3 (de) 1981-09-10
CS163478B1 (ru) 1975-09-15
DE2233259A1 (de) 1973-01-25
IT972156B (it) 1974-05-20
DD98458A1 (ru) 1973-06-20
DE2233259B2 (de) 1981-01-22
NL7209445A (ru) 1973-01-09
GB1393619A (en) 1975-05-07
FR2144881B1 (ru) 1976-08-06

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