SG135040A1 - Method for processing wafer - Google Patents

Method for processing wafer

Info

Publication number
SG135040A1
SG135040A1 SG200405128-0A SG2004051280A SG135040A1 SG 135040 A1 SG135040 A1 SG 135040A1 SG 2004051280 A SG2004051280 A SG 2004051280A SG 135040 A1 SG135040 A1 SG 135040A1
Authority
SG
Singapore
Prior art keywords
processing wafer
wafer
processing
Prior art date
Application number
SG200405128-0A
Other languages
English (en)
Inventor
Karl Heinz Priewasser
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34380376&utm_source=***_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SG135040(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG135040A1 publication Critical patent/SG135040A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
SG200405128-0A 2003-09-26 2004-09-17 Method for processing wafer SG135040A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003335238 2003-09-26
JP2004135704A JP4462997B2 (ja) 2003-09-26 2004-04-30 ウェーハの加工方法

Publications (1)

Publication Number Publication Date
SG135040A1 true SG135040A1 (en) 2007-09-28

Family

ID=34380376

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200405128-0A SG135040A1 (en) 2003-09-26 2004-09-17 Method for processing wafer

Country Status (5)

Country Link
US (1) US7115485B2 (ja)
JP (1) JP4462997B2 (ja)
CN (1) CN100355037C (ja)
DE (1) DE102004044945B4 (ja)
SG (1) SG135040A1 (ja)

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JP4647228B2 (ja) * 2004-04-01 2011-03-09 株式会社ディスコ ウェーハの加工方法
DE102004018249B3 (de) 2004-04-15 2006-03-16 Infineon Technologies Ag Verfahren zum Bearbeiten eines Werkstücks an einem Werkstückträger
JP2007019379A (ja) * 2005-07-11 2007-01-25 Disco Abrasive Syst Ltd ウェーハの加工方法
JP4791774B2 (ja) * 2005-07-25 2011-10-12 株式会社ディスコ ウェーハの加工方法及び研削装置
JP4874602B2 (ja) * 2005-08-26 2012-02-15 株式会社ディスコ ウエーハの加工方法およびウエーハの加工方法に用いる粘着テープ
JP2007073788A (ja) * 2005-09-08 2007-03-22 Matsushita Electric Ind Co Ltd ウエハのダイシング方法
JP4808458B2 (ja) * 2005-09-28 2011-11-02 株式会社ディスコ ウェハ加工方法
JP4741331B2 (ja) * 2005-09-29 2011-08-03 株式会社ディスコ ウエーハの加工方法
JP4741332B2 (ja) * 2005-09-30 2011-08-03 株式会社ディスコ ウエーハの加工方法
JP2007123687A (ja) * 2005-10-31 2007-05-17 Tokyo Seimitsu Co Ltd 半導体ウェーハ裏面の研削方法及び半導体ウェーハ研削装置
JP4749849B2 (ja) * 2005-11-28 2011-08-17 株式会社ディスコ ウェーハの分割方法
JP4749851B2 (ja) * 2005-11-29 2011-08-17 株式会社ディスコ ウェーハの分割方法
JP4806282B2 (ja) * 2006-03-29 2011-11-02 株式会社ディスコ ウエーハの処理装置
JP4968819B2 (ja) * 2006-04-13 2012-07-04 株式会社ディスコ ウェーハの加工方法
WO2007122438A1 (en) * 2006-04-21 2007-11-01 Infineon Technologies Ag A method for producing a thin semiconductor chip
JP4698519B2 (ja) * 2006-07-31 2011-06-08 日東電工株式会社 半導体ウエハマウント装置
JP4927484B2 (ja) * 2006-09-13 2012-05-09 株式会社ディスコ 積層用デバイスの製造方法
US20080242052A1 (en) * 2007-03-30 2008-10-02 Tao Feng Method of forming ultra thin chips of power devices
JP2009043992A (ja) * 2007-08-09 2009-02-26 Disco Abrasive Syst Ltd ウエーハの加工方法
US7674689B2 (en) * 2007-09-20 2010-03-09 Infineon Technologies Ag Method of making an integrated circuit including singulating a semiconductor wafer
AT508318B1 (de) * 2008-01-24 2022-07-15 Brewer Science Inc Verfahren für eine vorübergehende montage eines bausteinwafers auf einem trägersubstrat
US7541203B1 (en) * 2008-05-13 2009-06-02 International Business Machines Corporation Conductive adhesive for thinned silicon wafers with through silicon vias
US8084335B2 (en) * 2008-07-11 2011-12-27 Semiconductor Components Industries, Llc Method of thinning a semiconductor wafer using a film frame
JP5458460B2 (ja) * 2008-09-08 2014-04-02 株式会社東京精密 切削加工装置及び切削加工方法
JP5318537B2 (ja) * 2008-11-10 2013-10-16 株式会社ディスコ ウエーハの加工方法
JP5495647B2 (ja) * 2009-07-17 2014-05-21 株式会社ディスコ ウェーハの加工方法
JP2011222843A (ja) * 2010-04-13 2011-11-04 Renesas Electronics Corp 半導体装置の製造方法
US8852391B2 (en) * 2010-06-21 2014-10-07 Brewer Science Inc. Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate
JP5664470B2 (ja) * 2010-06-28 2015-02-04 信越化学工業株式会社 ナノインプリント用合成石英ガラス基板の製造方法
US9263314B2 (en) 2010-08-06 2016-02-16 Brewer Science Inc. Multiple bonding layers for thin-wafer handling
US8753460B2 (en) 2011-01-28 2014-06-17 International Business Machines Corporation Reduction of edge chipping during wafer handling
JP5936312B2 (ja) * 2011-03-31 2016-06-22 株式会社ディスコ 半導体ウエーハの加工方法
JP5706258B2 (ja) * 2011-07-08 2015-04-22 株式会社東京精密 ウェハの電気特性検査方法
US8580655B2 (en) * 2012-03-02 2013-11-12 Disco Corporation Processing method for bump-included device wafer
JP6021362B2 (ja) * 2012-03-09 2016-11-09 株式会社ディスコ 板状物の研削方法
JP2013197511A (ja) * 2012-03-22 2013-09-30 Toshiba Corp サポート基板、半導体装置の製造方法、半導体装置の検査方法
JP5770677B2 (ja) * 2012-05-08 2015-08-26 株式会社ディスコ ウェーハの加工方法
JP6063641B2 (ja) * 2012-05-16 2017-01-18 株式会社ディスコ ウエーハ保護部材
JP2013247135A (ja) * 2012-05-23 2013-12-09 Disco Abrasive Syst Ltd ウエーハの加工方法
JP5934578B2 (ja) * 2012-05-24 2016-06-15 株式会社ディスコ 保護テープ貼着方法
JP2013251302A (ja) * 2012-05-30 2013-12-12 Disco Abrasive Syst Ltd 粘着剤塗布装置
JP5926632B2 (ja) * 2012-06-28 2016-05-25 株式会社ディスコ 半導体チップの樹脂封止方法
CN103871911B (zh) * 2012-12-10 2018-01-23 株式会社迪思科 器件晶片的加工方法
JP6061731B2 (ja) * 2013-03-01 2017-01-18 株式会社ディスコ 表面保護部材及びウエーハの加工方法
US9269603B2 (en) * 2013-05-09 2016-02-23 Globalfoundries Inc. Temporary liquid thermal interface material for surface tension adhesion and thermal control
US8906745B1 (en) * 2013-09-12 2014-12-09 Micro Processing Technology, Inc. Method using fluid pressure to remove back metal from semiconductor wafer scribe streets
JP2015217461A (ja) * 2014-05-16 2015-12-07 株式会社ディスコ ウェーハの加工方法
JP6295146B2 (ja) * 2014-06-13 2018-03-14 株式会社ディスコ 研削装置
US9905453B2 (en) * 2014-12-29 2018-02-27 Disco Corporation Protective sheeting for use in processing a semiconductor-sized wafer and semiconductor-sized wafer processing method
DE102014227005B4 (de) 2014-12-29 2023-09-07 Disco Corporation Verfahren zum Aufteilen eines Wafers in Chips

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Publication number Priority date Publication date Assignee Title
JPH02137227A (ja) * 1988-11-17 1990-05-25 Nec Yamagata Ltd 半導体装置の製造方法
JPH0562950A (ja) * 1991-08-29 1993-03-12 Nitto Denko Corp 半導体ウエハへの保護テープ貼り付けおよび剥離方法
JPH11307488A (ja) * 1998-04-24 1999-11-05 Denso Corp 半導体装置、その製造方法、加工ガイドおよびその加工装置
JP3661444B2 (ja) * 1998-10-28 2005-06-15 株式会社ルネサステクノロジ 半導体装置、半導体ウエハ、半導体モジュールおよび半導体装置の製造方法
JP4240711B2 (ja) * 1999-12-27 2009-03-18 日立化成工業株式会社 ダイボンディング用接着フィルム及び半導体装置の製造方法
JP2001196404A (ja) * 2000-01-11 2001-07-19 Fujitsu Ltd 半導体装置及びその製造方法
JP4615095B2 (ja) * 2000-06-08 2011-01-19 株式会社ディスコ チップの研削方法
US6524881B1 (en) * 2000-08-25 2003-02-25 Micron Technology, Inc. Method and apparatus for marking a bare semiconductor die
JP2002075940A (ja) * 2000-08-25 2002-03-15 Hitachi Ltd 半導体装置の製造方法
JP2002100589A (ja) * 2000-09-21 2002-04-05 Hitachi Ltd 半導体装置製造方法
US6506681B2 (en) * 2000-12-06 2003-01-14 Micron Technology, Inc. Thin flip—chip method
TWI241674B (en) * 2001-11-30 2005-10-11 Disco Corp Manufacturing method of semiconductor chip
JP3787526B2 (ja) * 2002-01-15 2006-06-21 積水化学工業株式会社 Ｉｃチップの製造方法
JP2003243347A (ja) * 2002-02-19 2003-08-29 Nitto Denko Corp 半導体ウエハ裏面研削時の表面保護シートおよび半導体ウエハの裏面研削方法
JP2004022634A (ja) * 2002-06-13 2004-01-22 Sekisui Chem Co Ltd ウエハ支持体及び半導体ウエハの製造方法
JP2004063953A (ja) * 2002-07-31 2004-02-26 Ube Ind Ltd ダイシングテ−プ
JP2004273895A (ja) * 2003-03-11 2004-09-30 Disco Abrasive Syst Ltd 半導体ウエーハの分割方法

Also Published As

Publication number Publication date
US20050070072A1 (en) 2005-03-31
CN100355037C (zh) 2007-12-12
CN1601704A (zh) 2005-03-30
DE102004044945B4 (de) 2016-12-08
US7115485B2 (en) 2006-10-03
JP4462997B2 (ja) 2010-05-12
JP2005123568A (ja) 2005-05-12
DE102004044945A1 (de) 2005-04-21

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