SG135040A1 - Method for processing wafer - Google Patents
Method for processing waferInfo
- Publication number
- SG135040A1 SG135040A1 SG200405128-0A SG2004051280A SG135040A1 SG 135040 A1 SG135040 A1 SG 135040A1 SG 2004051280 A SG2004051280 A SG 2004051280A SG 135040 A1 SG135040 A1 SG 135040A1
- Authority
- SG
- Singapore
- Prior art keywords
- processing wafer
- wafer
- processing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003335238 | 2003-09-26 | ||
JP2004135704A JP4462997B2 (ja) | 2003-09-26 | 2004-04-30 | ウェーハの加工方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG135040A1 true SG135040A1 (en) | 2007-09-28 |
Family
ID=34380376
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200405128-0A SG135040A1 (en) | 2003-09-26 | 2004-09-17 | Method for processing wafer |
Country Status (5)
Country | Link |
---|---|
US (1) | US7115485B2 (ja) |
JP (1) | JP4462997B2 (ja) |
CN (1) | CN100355037C (ja) |
DE (1) | DE102004044945B4 (ja) |
SG (1) | SG135040A1 (ja) |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4647228B2 (ja) * | 2004-04-01 | 2011-03-09 | 株式会社ディスコ | ウェーハの加工方法 |
DE102004018249B3 (de) | 2004-04-15 | 2006-03-16 | Infineon Technologies Ag | Verfahren zum Bearbeiten eines Werkstücks an einem Werkstückträger |
JP2007019379A (ja) * | 2005-07-11 | 2007-01-25 | Disco Abrasive Syst Ltd | ウェーハの加工方法 |
JP4791774B2 (ja) * | 2005-07-25 | 2011-10-12 | 株式会社ディスコ | ウェーハの加工方法及び研削装置 |
JP4874602B2 (ja) * | 2005-08-26 | 2012-02-15 | 株式会社ディスコ | ウエーハの加工方法およびウエーハの加工方法に用いる粘着テープ |
JP2007073788A (ja) * | 2005-09-08 | 2007-03-22 | Matsushita Electric Ind Co Ltd | ウエハのダイシング方法 |
JP4808458B2 (ja) * | 2005-09-28 | 2011-11-02 | 株式会社ディスコ | ウェハ加工方法 |
JP4741331B2 (ja) * | 2005-09-29 | 2011-08-03 | 株式会社ディスコ | ウエーハの加工方法 |
JP4741332B2 (ja) * | 2005-09-30 | 2011-08-03 | 株式会社ディスコ | ウエーハの加工方法 |
JP2007123687A (ja) * | 2005-10-31 | 2007-05-17 | Tokyo Seimitsu Co Ltd | 半導体ウェーハ裏面の研削方法及び半導体ウェーハ研削装置 |
JP4749849B2 (ja) * | 2005-11-28 | 2011-08-17 | 株式会社ディスコ | ウェーハの分割方法 |
JP4749851B2 (ja) * | 2005-11-29 | 2011-08-17 | 株式会社ディスコ | ウェーハの分割方法 |
JP4806282B2 (ja) * | 2006-03-29 | 2011-11-02 | 株式会社ディスコ | ウエーハの処理装置 |
JP4968819B2 (ja) * | 2006-04-13 | 2012-07-04 | 株式会社ディスコ | ウェーハの加工方法 |
WO2007122438A1 (en) * | 2006-04-21 | 2007-11-01 | Infineon Technologies Ag | A method for producing a thin semiconductor chip |
JP4698519B2 (ja) * | 2006-07-31 | 2011-06-08 | 日東電工株式会社 | 半導体ウエハマウント装置 |
JP4927484B2 (ja) * | 2006-09-13 | 2012-05-09 | 株式会社ディスコ | 積層用デバイスの製造方法 |
US20080242052A1 (en) * | 2007-03-30 | 2008-10-02 | Tao Feng | Method of forming ultra thin chips of power devices |
JP2009043992A (ja) * | 2007-08-09 | 2009-02-26 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
US7674689B2 (en) * | 2007-09-20 | 2010-03-09 | Infineon Technologies Ag | Method of making an integrated circuit including singulating a semiconductor wafer |
AT508318B1 (de) * | 2008-01-24 | 2022-07-15 | Brewer Science Inc | Verfahren für eine vorübergehende montage eines bausteinwafers auf einem trägersubstrat |
US7541203B1 (en) * | 2008-05-13 | 2009-06-02 | International Business Machines Corporation | Conductive adhesive for thinned silicon wafers with through silicon vias |
US8084335B2 (en) * | 2008-07-11 | 2011-12-27 | Semiconductor Components Industries, Llc | Method of thinning a semiconductor wafer using a film frame |
JP5458460B2 (ja) * | 2008-09-08 | 2014-04-02 | 株式会社東京精密 | 切削加工装置及び切削加工方法 |
JP5318537B2 (ja) * | 2008-11-10 | 2013-10-16 | 株式会社ディスコ | ウエーハの加工方法 |
JP5495647B2 (ja) * | 2009-07-17 | 2014-05-21 | 株式会社ディスコ | ウェーハの加工方法 |
JP2011222843A (ja) * | 2010-04-13 | 2011-11-04 | Renesas Electronics Corp | 半導体装置の製造方法 |
US8852391B2 (en) * | 2010-06-21 | 2014-10-07 | Brewer Science Inc. | Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate |
JP5664470B2 (ja) * | 2010-06-28 | 2015-02-04 | 信越化学工業株式会社 | ナノインプリント用合成石英ガラス基板の製造方法 |
US9263314B2 (en) | 2010-08-06 | 2016-02-16 | Brewer Science Inc. | Multiple bonding layers for thin-wafer handling |
US8753460B2 (en) | 2011-01-28 | 2014-06-17 | International Business Machines Corporation | Reduction of edge chipping during wafer handling |
JP5936312B2 (ja) * | 2011-03-31 | 2016-06-22 | 株式会社ディスコ | 半導体ウエーハの加工方法 |
JP5706258B2 (ja) * | 2011-07-08 | 2015-04-22 | 株式会社東京精密 | ウェハの電気特性検査方法 |
US8580655B2 (en) * | 2012-03-02 | 2013-11-12 | Disco Corporation | Processing method for bump-included device wafer |
JP6021362B2 (ja) * | 2012-03-09 | 2016-11-09 | 株式会社ディスコ | 板状物の研削方法 |
JP2013197511A (ja) * | 2012-03-22 | 2013-09-30 | Toshiba Corp | サポート基板、半導体装置の製造方法、半導体装置の検査方法 |
JP5770677B2 (ja) * | 2012-05-08 | 2015-08-26 | 株式会社ディスコ | ウェーハの加工方法 |
JP6063641B2 (ja) * | 2012-05-16 | 2017-01-18 | 株式会社ディスコ | ウエーハ保護部材 |
JP2013247135A (ja) * | 2012-05-23 | 2013-12-09 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP5934578B2 (ja) * | 2012-05-24 | 2016-06-15 | 株式会社ディスコ | 保護テープ貼着方法 |
JP2013251302A (ja) * | 2012-05-30 | 2013-12-12 | Disco Abrasive Syst Ltd | 粘着剤塗布装置 |
JP5926632B2 (ja) * | 2012-06-28 | 2016-05-25 | 株式会社ディスコ | 半導体チップの樹脂封止方法 |
CN103871911B (zh) * | 2012-12-10 | 2018-01-23 | 株式会社迪思科 | 器件晶片的加工方法 |
JP6061731B2 (ja) * | 2013-03-01 | 2017-01-18 | 株式会社ディスコ | 表面保護部材及びウエーハの加工方法 |
US9269603B2 (en) * | 2013-05-09 | 2016-02-23 | Globalfoundries Inc. | Temporary liquid thermal interface material for surface tension adhesion and thermal control |
US8906745B1 (en) * | 2013-09-12 | 2014-12-09 | Micro Processing Technology, Inc. | Method using fluid pressure to remove back metal from semiconductor wafer scribe streets |
JP2015217461A (ja) * | 2014-05-16 | 2015-12-07 | 株式会社ディスコ | ウェーハの加工方法 |
JP6295146B2 (ja) * | 2014-06-13 | 2018-03-14 | 株式会社ディスコ | 研削装置 |
US9905453B2 (en) * | 2014-12-29 | 2018-02-27 | Disco Corporation | Protective sheeting for use in processing a semiconductor-sized wafer and semiconductor-sized wafer processing method |
DE102014227005B4 (de) | 2014-12-29 | 2023-09-07 | Disco Corporation | Verfahren zum Aufteilen eines Wafers in Chips |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02137227A (ja) * | 1988-11-17 | 1990-05-25 | Nec Yamagata Ltd | 半導体装置の製造方法 |
JPH0562950A (ja) * | 1991-08-29 | 1993-03-12 | Nitto Denko Corp | 半導体ウエハへの保護テープ貼り付けおよび剥離方法 |
JPH11307488A (ja) * | 1998-04-24 | 1999-11-05 | Denso Corp | 半導体装置、その製造方法、加工ガイドおよびその加工装置 |
JP3661444B2 (ja) * | 1998-10-28 | 2005-06-15 | 株式会社ルネサステクノロジ | 半導体装置、半導体ウエハ、半導体モジュールおよび半導体装置の製造方法 |
JP4240711B2 (ja) * | 1999-12-27 | 2009-03-18 | 日立化成工業株式会社 | ダイボンディング用接着フィルム及び半導体装置の製造方法 |
JP2001196404A (ja) * | 2000-01-11 | 2001-07-19 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP4615095B2 (ja) * | 2000-06-08 | 2011-01-19 | 株式会社ディスコ | チップの研削方法 |
US6524881B1 (en) * | 2000-08-25 | 2003-02-25 | Micron Technology, Inc. | Method and apparatus for marking a bare semiconductor die |
JP2002075940A (ja) * | 2000-08-25 | 2002-03-15 | Hitachi Ltd | 半導体装置の製造方法 |
JP2002100589A (ja) * | 2000-09-21 | 2002-04-05 | Hitachi Ltd | 半導体装置製造方法 |
US6506681B2 (en) * | 2000-12-06 | 2003-01-14 | Micron Technology, Inc. | Thin flip—chip method |
TWI241674B (en) * | 2001-11-30 | 2005-10-11 | Disco Corp | Manufacturing method of semiconductor chip |
JP3787526B2 (ja) * | 2002-01-15 | 2006-06-21 | 積水化学工業株式会社 | Icチップの製造方法 |
JP2003243347A (ja) * | 2002-02-19 | 2003-08-29 | Nitto Denko Corp | 半導体ウエハ裏面研削時の表面保護シートおよび半導体ウエハの裏面研削方法 |
JP2004022634A (ja) * | 2002-06-13 | 2004-01-22 | Sekisui Chem Co Ltd | ウエハ支持体及び半導体ウエハの製造方法 |
JP2004063953A (ja) * | 2002-07-31 | 2004-02-26 | Ube Ind Ltd | ダイシングテ−プ |
JP2004273895A (ja) * | 2003-03-11 | 2004-09-30 | Disco Abrasive Syst Ltd | 半導体ウエーハの分割方法 |
-
2004
- 2004-04-30 JP JP2004135704A patent/JP4462997B2/ja not_active Expired - Lifetime
- 2004-09-16 DE DE102004044945.7A patent/DE102004044945B4/de active Active
- 2004-09-17 CN CNB2004100787920A patent/CN100355037C/zh active Active
- 2004-09-17 SG SG200405128-0A patent/SG135040A1/en unknown
- 2004-09-23 US US10/947,242 patent/US7115485B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20050070072A1 (en) | 2005-03-31 |
CN100355037C (zh) | 2007-12-12 |
CN1601704A (zh) | 2005-03-30 |
DE102004044945B4 (de) | 2016-12-08 |
US7115485B2 (en) | 2006-10-03 |
JP4462997B2 (ja) | 2010-05-12 |
JP2005123568A (ja) | 2005-05-12 |
DE102004044945A1 (de) | 2005-04-21 |
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