SG10201802542RA - Workpiece processing method - Google Patents
Workpiece processing methodInfo
- Publication number
- SG10201802542RA SG10201802542RA SG10201802542RA SG10201802542RA SG10201802542RA SG 10201802542R A SG10201802542R A SG 10201802542RA SG 10201802542R A SG10201802542R A SG 10201802542RA SG 10201802542R A SG10201802542R A SG 10201802542RA SG 10201802542R A SG10201802542R A SG 10201802542RA
- Authority
- SG
- Singapore
- Prior art keywords
- workpiece
- cutting
- processing method
- holding
- multilayer member
- Prior art date
Links
- 238000003672 processing method Methods 0.000 title abstract 4
- 239000002173 cutting fluid Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 150000007524 organic acids Chemical class 0.000 abstract 1
- 239000007800 oxidant agent Substances 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
- B28D5/023—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels with a cutting blade mounted on a carriage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/60—Preliminary treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/007—Use, recovery or regeneration of abrasive mediums
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017074249A JP2018181902A (ja) | 2017-04-04 | 2017-04-04 | 加工方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201802542RA true SG10201802542RA (en) | 2018-11-29 |
Family
ID=63525301
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201802542RA SG10201802542RA (en) | 2017-04-04 | 2018-03-27 | Workpiece processing method |
Country Status (7)
Country | Link |
---|---|
US (1) | US10872819B2 (zh) |
JP (1) | JP2018181902A (zh) |
KR (1) | KR20180112694A (zh) |
CN (1) | CN108687978B (zh) |
DE (1) | DE102018205028A1 (zh) |
SG (1) | SG10201802542RA (zh) |
TW (1) | TWI736747B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6821261B2 (ja) * | 2017-04-21 | 2021-01-27 | 株式会社ディスコ | 被加工物の加工方法 |
DE102019204457B4 (de) * | 2019-03-29 | 2024-01-25 | Disco Corporation | Substratbearbeitungsverfahren |
DE212021000335U1 (de) * | 2020-09-16 | 2023-02-01 | Rohm Co., Ltd. | Halbleiterbauelement |
Family Cites Families (48)
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JP4207976B2 (ja) * | 2006-05-17 | 2009-01-14 | 住友電気工業株式会社 | 化合物半導体基板の表面処理方法、および化合物半導体結晶の製造方法 |
JPS6349926A (ja) | 1986-08-20 | 1988-03-02 | Nec Corp | 複数ソ−ト処理の並行実行方式 |
JPH06349926A (ja) | 1993-06-12 | 1994-12-22 | Hitachi Ltd | 半導体装置 |
US5461008A (en) | 1994-05-26 | 1995-10-24 | Delco Electronics Corporatinon | Method of preventing aluminum bond pad corrosion during dicing of integrated circuit wafers |
JPH0955573A (ja) | 1995-08-10 | 1997-02-25 | Disco Abrasive Syst Ltd | 樹脂基板の切削方法 |
US5904548A (en) | 1996-11-21 | 1999-05-18 | Texas Instruments Incorporated | Trench scribe line for decreased chip spacing |
US6310017B1 (en) | 1999-02-01 | 2001-10-30 | Ct Associates, Inc. | Cleaner composition, method for making and using same |
JP3440888B2 (ja) | 1999-06-21 | 2003-08-25 | 株式会社村田製作所 | ダイシングブレード及び電子部品の製造方法 |
US6280298B1 (en) | 1999-11-24 | 2001-08-28 | Intel Corporation | Test probe cleaning |
US6596562B1 (en) * | 2002-01-03 | 2003-07-22 | Intel Corporation | Semiconductor wafer singulation method |
US6791197B1 (en) | 2002-08-26 | 2004-09-14 | Integrated Device Technology, Inc. | Reducing layer separation and cracking in semiconductor devices |
US7855130B2 (en) | 2003-04-21 | 2010-12-21 | International Business Machines Corporation | Corrosion inhibitor additives to prevent semiconductor device bond-pad corrosion during wafer dicing operations |
US7087452B2 (en) * | 2003-04-22 | 2006-08-08 | Intel Corporation | Edge arrangements for integrated circuit chips |
JP4231349B2 (ja) | 2003-07-02 | 2009-02-25 | 株式会社ディスコ | レーザー加工方法およびレーザー加工装置 |
US6974726B2 (en) * | 2003-12-30 | 2005-12-13 | Intel Corporation | Silicon wafer with soluble protective coating |
JP2006140341A (ja) * | 2004-11-12 | 2006-06-01 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
JP4751634B2 (ja) | 2005-03-31 | 2011-08-17 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
US7152596B1 (en) | 2005-09-15 | 2006-12-26 | You Min Zhang | Circular saw blade body |
US20080191318A1 (en) | 2007-02-09 | 2008-08-14 | Advanced Micro Devices, Inc. | Semiconductor device and method of sawing semiconductor device |
US8629532B2 (en) * | 2007-05-08 | 2014-01-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor wafer with assisting dicing structure and dicing method thereof |
JP5128897B2 (ja) * | 2007-10-23 | 2013-01-23 | 株式会社ディスコ | ウエーハの分割方法 |
JP2011020231A (ja) * | 2009-07-17 | 2011-02-03 | Disco Abrasive Syst Ltd | 切削装置 |
JP5419596B2 (ja) | 2009-09-02 | 2014-02-19 | 兼房株式会社 | 回転工具のための流体供給機構 |
US8883701B2 (en) * | 2010-07-09 | 2014-11-11 | Air Products And Chemicals, Inc. | Method for wafer dicing and composition useful thereof |
IT1402530B1 (it) | 2010-10-25 | 2013-09-13 | St Microelectronics Srl | Circuiti integrati con retro-metallizzazione e relativo metodo di produzione. |
JP5480923B2 (ja) | 2011-05-13 | 2014-04-23 | シャープ株式会社 | 半導体モジュールの製造方法及び半導体モジュール |
US8557682B2 (en) * | 2011-06-15 | 2013-10-15 | Applied Materials, Inc. | Multi-layer mask for substrate dicing by laser and plasma etch |
US8673741B2 (en) * | 2011-06-24 | 2014-03-18 | Electro Scientific Industries, Inc | Etching a laser-cut semiconductor before dicing a die attach film (DAF) or other material layer |
JP2013161998A (ja) | 2012-02-07 | 2013-08-19 | Disco Abrasive Syst Ltd | 切削方法 |
US8952413B2 (en) | 2012-03-08 | 2015-02-10 | Micron Technology, Inc. | Etched trenches in bond materials for die singulation, and associated systems and methods |
US8652940B2 (en) | 2012-04-10 | 2014-02-18 | Applied Materials, Inc. | Wafer dicing used hybrid multi-step laser scribing process with plasma etch |
JP5996260B2 (ja) * | 2012-05-09 | 2016-09-21 | 株式会社ディスコ | 被加工物の分割方法 |
US8871613B2 (en) * | 2012-06-18 | 2014-10-28 | Semiconductor Components Industries, Llc | Semiconductor die singulation method |
US8859397B2 (en) | 2012-07-13 | 2014-10-14 | Applied Materials, Inc. | Method of coating water soluble mask for laser scribing and plasma etch |
US9085049B2 (en) | 2012-11-30 | 2015-07-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for manufacturing semiconductor device |
US8980726B2 (en) * | 2013-01-25 | 2015-03-17 | Applied Materials, Inc. | Substrate dicing by laser ablation and plasma etch damage removal for ultra-thin wafers |
JP6078376B2 (ja) * | 2013-02-22 | 2017-02-08 | 株式会社ディスコ | ウエーハの加工方法 |
US20150040983A1 (en) * | 2013-08-07 | 2015-02-12 | Solarworld Industries America, Inc. | Acidic etching process for si wafers |
JP6274926B2 (ja) * | 2014-03-17 | 2018-02-07 | 株式会社ディスコ | 切削方法 |
US9275902B2 (en) * | 2014-03-26 | 2016-03-01 | Applied Materials, Inc. | Dicing processes for thin wafers with bumps on wafer backside |
US9165832B1 (en) * | 2014-06-30 | 2015-10-20 | Applied Materials, Inc. | Method of die singulation using laser ablation and induction of internal defects with a laser |
US9130057B1 (en) * | 2014-06-30 | 2015-09-08 | Applied Materials, Inc. | Hybrid dicing process using a blade and laser |
JP6426407B2 (ja) * | 2014-09-03 | 2018-11-21 | 株式会社ディスコ | ウエーハの加工方法 |
JP6703485B2 (ja) | 2014-09-29 | 2020-06-03 | リンテック株式会社 | 半導体ウエハ加工用シート用基材、半導体ウエハ加工用シート、および半導体装置の製造方法 |
JP6545468B2 (ja) | 2015-01-16 | 2019-07-17 | ショーダテクトロン株式会社 | 分割溝形成装置および分割溝形成方法 |
CN105925984B (zh) * | 2016-05-16 | 2021-03-23 | 浙江师范大学 | 一种机械加工用去毛刺液及其制备方法 |
US10535554B2 (en) | 2016-12-14 | 2020-01-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor die having edge with multiple gradients and method for forming the same |
JP6890885B2 (ja) * | 2017-04-04 | 2021-06-18 | 株式会社ディスコ | 加工方法 |
-
2017
- 2017-04-04 JP JP2017074249A patent/JP2018181902A/ja active Pending
-
2018
- 2018-03-07 TW TW107107586A patent/TWI736747B/zh active
- 2018-03-27 SG SG10201802542RA patent/SG10201802542RA/en unknown
- 2018-03-27 US US15/937,402 patent/US10872819B2/en active Active
- 2018-03-28 CN CN201810261942.3A patent/CN108687978B/zh active Active
- 2018-03-30 KR KR1020180037173A patent/KR20180112694A/ko not_active Application Discontinuation
- 2018-04-04 DE DE102018205028.7A patent/DE102018205028A1/de active Pending
Also Published As
Publication number | Publication date |
---|---|
CN108687978A (zh) | 2018-10-23 |
TWI736747B (zh) | 2021-08-21 |
US20180286754A1 (en) | 2018-10-04 |
US10872819B2 (en) | 2020-12-22 |
JP2018181902A (ja) | 2018-11-15 |
DE102018205028A1 (de) | 2018-10-04 |
TW201838004A (zh) | 2018-10-16 |
KR20180112694A (ko) | 2018-10-12 |
CN108687978B (zh) | 2021-09-14 |
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