SG10201402613PA - Method for controlling the diameter of a single crystal to a set point diameter - Google Patents
Method for controlling the diameter of a single crystal to a set point diameterInfo
- Publication number
- SG10201402613PA SG10201402613PA SG10201402613PA SG10201402613PA SG10201402613PA SG 10201402613P A SG10201402613P A SG 10201402613PA SG 10201402613P A SG10201402613P A SG 10201402613PA SG 10201402613P A SG10201402613P A SG 10201402613PA SG 10201402613P A SG10201402613P A SG 10201402613PA
- Authority
- SG
- Singapore
- Prior art keywords
- diameter
- single crystal
- meniscus
- controlling
- set point
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102013210687.4A DE102013210687B4 (de) | 2013-06-07 | 2013-06-07 | Verfahren zur Regelung des Durchmessers eines Einkristalls auf einen Solldurchmesser |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201402613PA true SG10201402613PA (en) | 2015-01-29 |
Family
ID=52004342
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201402613PA SG10201402613PA (en) | 2013-06-07 | 2014-05-23 | Method for controlling the diameter of a single crystal to a set point diameter |
Country Status (7)
Country | Link |
---|---|
US (1) | US9340897B2 (de) |
JP (1) | JP5961661B2 (de) |
KR (1) | KR101617522B1 (de) |
CN (1) | CN104233456A (de) |
DE (1) | DE102013210687B4 (de) |
SG (1) | SG10201402613PA (de) |
TW (1) | TWI620837B (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107151817A (zh) * | 2016-03-03 | 2017-09-12 | 上海新昇半导体科技有限公司 | 单晶硅的生长方法及其制备的单晶硅锭 |
CN107815729A (zh) * | 2016-09-12 | 2018-03-20 | 上海新昇半导体科技有限公司 | 一种单晶炉 |
DE102016219605A1 (de) * | 2016-10-10 | 2018-04-12 | Siltronic Ag | Verfahren zum Ziehen eines Einkristalls aus Halbleitermaterial aus einer Schmelze, die in einem Tiegel enthalten ist |
KR101874712B1 (ko) * | 2016-12-07 | 2018-07-04 | 에스케이실트론 주식회사 | 잉곳 성장 제어장치 및 그 제어방법 |
KR101895131B1 (ko) * | 2016-12-28 | 2018-10-18 | 경북대학교 산학협력단 | 단결정 성장로의 잉곳 직경 측정 방법 |
DE102019101991A1 (de) | 2019-01-28 | 2020-07-30 | Pva Tepla Ag | Verfahren zum Ziehen eines zylindrischen Kristalls aus einer Schmelze |
DE102019211609A1 (de) * | 2019-08-01 | 2021-02-04 | Siltronic Ag | Verfahren zum Ziehen eines Einkristalls aus Silizium gemäß der Czochralski-Methode aus einer Schmelze |
CN111020691A (zh) * | 2019-12-03 | 2020-04-17 | 徐州鑫晶半导体科技有限公司 | 拉制晶棒的***和控制方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6321280A (ja) | 1986-07-10 | 1988-01-28 | Osaka Titanium Seizo Kk | 単結晶テール部の直径制御方法 |
JPS63100097A (ja) | 1986-10-14 | 1988-05-02 | Osaka Titanium Seizo Kk | 単結晶の直径測定方法 |
US4857278A (en) * | 1987-07-13 | 1989-08-15 | Massachusetts Institute Of Technology | Control system for the czochralski process |
JPH0196089A (ja) | 1987-10-07 | 1989-04-14 | Osaka Titanium Co Ltd | 単結晶の直径制御方法 |
JP3484758B2 (ja) | 1994-05-17 | 2004-01-06 | 三菱住友シリコン株式会社 | 結晶成長装置及び結晶成長方法 |
US5653799A (en) | 1995-06-02 | 1997-08-05 | Memc Electronic Materials, Inc. | Method for controlling growth of a silicon crystal |
US5656078A (en) * | 1995-11-14 | 1997-08-12 | Memc Electronic Materials, Inc. | Non-distorting video camera for use with a system for controlling growth of a silicon crystal |
JP3377378B2 (ja) | 1996-09-19 | 2003-02-17 | メルテックス株式会社 | 化学研磨剤 |
US6106612A (en) * | 1998-06-04 | 2000-08-22 | Seh America Inc. | Level detector and method for detecting a surface level of a material in a container |
US6203611B1 (en) | 1999-10-19 | 2001-03-20 | Memc Electronic Materials, Inc. | Method of controlling growth of a semiconductor crystal to automatically transition from taper growth to target diameter growth |
WO2001057294A1 (en) | 2000-02-01 | 2001-08-09 | Memc Electronic Materials, Inc. | Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations |
JP4246561B2 (ja) * | 2003-07-22 | 2009-04-02 | コバレントマテリアル株式会社 | 単結晶直径の制御方法 |
US20050211157A1 (en) | 2004-03-25 | 2005-09-29 | Radkevich Olexy V | Process control system for controlling a crystal-growing apparatus |
JP4918897B2 (ja) | 2007-08-29 | 2012-04-18 | 株式会社Sumco | シリコン単結晶引上方法 |
US8012255B2 (en) * | 2008-07-31 | 2011-09-06 | Sumco Phoenix Corporation | Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process |
DE102009056638B4 (de) | 2009-12-02 | 2013-08-01 | Siltronic Ag | Verfahren zum Ziehen eines Einkristalls aus Silizium mit einem Abschnitt mit gleich bleibendem Durchmesser |
CN102758250A (zh) * | 2012-07-20 | 2012-10-31 | 西安理工晶体科技有限公司 | 锗单晶直拉生长法的自动等径控制方法 |
-
2013
- 2013-06-07 DE DE102013210687.4A patent/DE102013210687B4/de active Active
-
2014
- 2014-05-23 SG SG10201402613PA patent/SG10201402613PA/en unknown
- 2014-05-23 US US14/285,752 patent/US9340897B2/en active Active
- 2014-06-02 JP JP2014114084A patent/JP5961661B2/ja active Active
- 2014-06-03 KR KR1020140067363A patent/KR101617522B1/ko active IP Right Grant
- 2014-06-06 CN CN201410249799.8A patent/CN104233456A/zh active Pending
- 2014-06-06 TW TW103119693A patent/TWI620837B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR20140143710A (ko) | 2014-12-17 |
TW201447059A (zh) | 2014-12-16 |
KR101617522B1 (ko) | 2016-05-02 |
US20140360425A1 (en) | 2014-12-11 |
JP2014237580A (ja) | 2014-12-18 |
US9340897B2 (en) | 2016-05-17 |
CN104233456A (zh) | 2014-12-24 |
TWI620837B (zh) | 2018-04-11 |
DE102013210687A1 (de) | 2014-12-11 |
JP5961661B2 (ja) | 2016-08-02 |
DE102013210687B4 (de) | 2018-12-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10201402613PA (en) | Method for controlling the diameter of a single crystal to a set point diameter | |
PL3242965T3 (pl) | SPOSÓB WZROSTU MONOKRYSZTAŁÓW FAZY BETA TLENKU GALU (β-Ga<sub>2</sub>O<sub>3</sub>) Z ROZTOPU ZAWARTEGO W METALOWYM TYGLU POPRZEZ KONTROLĘ CIŚNIENIA CZĄSTKOWEGO O<sub>2</sub> | |
PT3657294T (pt) | Método de controlo da orientação de um seguidor solar baseado em modelos cartográficos | |
PL3333288T3 (pl) | TYGIEL Z SiC, METODA WYTWARZANIA TEGO TYGLA ORAZ METODA OTRZYMYWANIA MONOKRYSZTAŁU SiC | |
SA517390505B1 (ar) | بوتقة تشوخرالسكي للتحكم بالأكسجين وطرق ذات صلة | |
EP3260582A4 (de) | Verfahren zur herstellung eines siliciumcarbid-einkristallingots und siliciumcarbid-einkristallingot | |
GB2535521B (en) | A method of controlling the stopping and starting of an engine | |
FR3009278B1 (fr) | Procede de regulation du degivrage d'un bord d'attaque d'un aeronef et dispositif pour sa mise en oeuvre | |
MX2016010654A (es) | Método para interpretación de sensores de temperatura distribuidos durante las operaciones de pozo. | |
PH12017501116B1 (en) | Low-pressure casting device and low-pressure casting method | |
EP3561158A4 (de) | Verfahren zur züchtung eines einkristallsiliciumcarbidblocks mit grossem durchmesser | |
WO2015189123A3 (en) | A method of controlling an artificial light plant growing system | |
FR3022527B1 (fr) | Procede et dispositif pour la fabrication directe d'une piece sur une structure | |
FR3013681B1 (fr) | Procede pour diminuer le temps de manoeuvre apparent d'atterrisseurs d'un aeronef. | |
WO2012082860A3 (en) | Closed-loop silicon etching control method and system | |
FR3004031B1 (fr) | Dispositif de regulation pour un moteur-generateur de vehicule et son procede de regulation | |
FR3028720B1 (fr) | Procede de commande d'un cuiseur a riz et cuiseur a riz pour la mise en œuvre d'un tel procede | |
EP3361006A4 (de) | Einfaches verfahren zur bestimmung der durchbruchszeit für versickerungsschutzauskleidung einer deponie | |
SG11201805551RA (en) | Method for determining and regulating a diameter of a single crystal during pulling of the single crystal | |
PL3085452T3 (pl) | Wirówka o działaniu nieciągłym z urządzeniem sterującym do sterowania pracą wirówki oraz sposób napędzania wirówki | |
GB201608873D0 (en) | Silicon ingot growth crucible with patterned protrusion structured layer | |
IL247422B (en) | A method for optimizing the ignition time of a Coriolis-type gyroscope and its corresponding Coriolis-type gyroscope | |
FR3037681B1 (fr) | Procede de definition d’une courbe de charges optimisee pour grue, procede et dispositif de controle pour controler la charge suspendue a une grue a partir de la courbe de charges optimisee | |
FR3036788B1 (fr) | Procede de commande de precession d'un gyroscope vibrant | |
MX2016012843A (es) | Metodo de fijacion. |