US4211006A
(en)
*
|
1979-01-02 |
1980-07-08 |
Warner-Lambert Company |
Guarded razor blade
|
FR2467064A1
(fr)
*
|
1979-10-06 |
1981-04-17 |
Warner Lambert Co |
Placage par projection d'instruments tranchants
|
US4418473A
(en)
*
|
1982-03-26 |
1983-12-06 |
International Business Machines Corp. |
Method of making edge protected ferrite core
|
US4451344A
(en)
*
|
1982-03-26 |
1984-05-29 |
International Business Machines Corp. |
Method of making edge protected ferrite core
|
GB2138027B
(en)
*
|
1983-04-12 |
1986-09-10 |
Citizen Watch Co Ltd |
A process for plating an article with a gold-based alloy and an alloy therefor
|
US4468309A
(en)
*
|
1983-04-22 |
1984-08-28 |
White Engineering Corporation |
Method for resisting galling
|
FR2550007A1
(en)
*
|
1983-07-29 |
1985-02-01 |
Sanyo Electric Co |
Method for producing a semiconducting film and photovoltaic device obtained by the method
|
GB2178687A
(en)
*
|
1985-08-09 |
1987-02-18 |
Joseph George Feinberg |
Razor blade
|
GB8600829D0
(en)
*
|
1986-01-23 |
1986-02-19 |
Gillette Co |
Formation of hard coatings on cutting edges
|
US4764394A
(en)
*
|
1987-01-20 |
1988-08-16 |
Wisconsin Alumni Research Foundation |
Method and apparatus for plasma source ion implantation
|
GB8728399D0
(en)
*
|
1987-12-04 |
1988-01-13 |
Secretary Trade Ind Brit |
Deposition of materials to substrates
|
FR2650822B1
(fr)
*
|
1989-08-14 |
1993-01-08 |
Saint Gobain Internal |
Procede de depot de couches minces
|
FR2681472B1
(fr)
|
1991-09-18 |
1993-10-29 |
Commissariat Energie Atomique |
Procede de fabrication de films minces de materiau semiconducteur.
|
WO1993010275A1
(en)
*
|
1991-11-21 |
1993-05-27 |
Nisshin Steel Co., Ltd. |
Method of forming layer of evaporation coating
|
GB2265327B
(en)
*
|
1992-03-06 |
1996-01-03 |
Wilkinson Sword Gmbh |
Razor head of a wet razor
|
US5630275A
(en)
*
|
1994-08-23 |
1997-05-20 |
Warner-Lambert Company |
Multi-blade razor head with improved performance
|
US5456009A
(en)
*
|
1994-08-23 |
1995-10-10 |
Warner-Lambert Company |
Multi-blade razor head with improved performance
|
JP3332700B2
(ja)
*
|
1995-12-22 |
2002-10-07 |
キヤノン株式会社 |
堆積膜形成方法及び堆積膜形成装置
|
FR2748851B1
(fr)
|
1996-05-15 |
1998-08-07 |
Commissariat Energie Atomique |
Procede de realisation d'une couche mince de materiau semiconducteur
|
US6033974A
(en)
|
1997-05-12 |
2000-03-07 |
Silicon Genesis Corporation |
Method for controlled cleaving process
|
US6162705A
(en)
*
|
1997-05-12 |
2000-12-19 |
Silicon Genesis Corporation |
Controlled cleavage process and resulting device using beta annealing
|
US6291313B1
(en)
|
1997-05-12 |
2001-09-18 |
Silicon Genesis Corporation |
Method and device for controlled cleaving process
|
US20070122997A1
(en)
*
|
1998-02-19 |
2007-05-31 |
Silicon Genesis Corporation |
Controlled process and resulting device
|
US6027988A
(en)
*
|
1997-05-28 |
2000-02-22 |
The Regents Of The University Of California |
Method of separating films from bulk substrates by plasma immersion ion implantation
|
US6548382B1
(en)
*
|
1997-07-18 |
2003-04-15 |
Silicon Genesis Corporation |
Gettering technique for wafers made using a controlled cleaving process
|
FR2773261B1
(fr)
|
1997-12-30 |
2000-01-28 |
Commissariat Energie Atomique |
Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
|
US6032372A
(en)
*
|
1998-06-22 |
2000-03-07 |
Dischler; Louis |
Intrinsically fenced safety razor head
|
US6519856B1
(en)
|
1998-06-22 |
2003-02-18 |
Delphi Oracle Corp |
Safety razor head with intrinsic fencing and lateral skin tensioning
|
US6035535A
(en)
*
|
1998-10-01 |
2000-03-14 |
Dischler; Louis |
Flexible safety razor head with intrinsically fenced cantilevered cutting edges
|
US6291326B1
(en)
|
1998-06-23 |
2001-09-18 |
Silicon Genesis Corporation |
Pre-semiconductor process implant and post-process film separation
|
US6221740B1
(en)
|
1999-08-10 |
2001-04-24 |
Silicon Genesis Corporation |
Substrate cleaving tool and method
|
US6263941B1
(en)
|
1999-08-10 |
2001-07-24 |
Silicon Genesis Corporation |
Nozzle for cleaving substrates
|
US6500732B1
(en)
|
1999-08-10 |
2002-12-31 |
Silicon Genesis Corporation |
Cleaving process to fabricate multilayered substrates using low implantation doses
|
JP2003506883A
(ja)
*
|
1999-08-10 |
2003-02-18 |
シリコン ジェネシス コーポレイション |
低打ち込みドーズ量を用いて多層基板を製造するための劈開プロセス
|
FR2823599B1
(fr)
|
2001-04-13 |
2004-12-17 |
Commissariat Energie Atomique |
Substrat demomtable a tenue mecanique controlee et procede de realisation
|
US8187377B2
(en)
*
|
2002-10-04 |
2012-05-29 |
Silicon Genesis Corporation |
Non-contact etch annealing of strained layers
|
FR2848336B1
(fr)
*
|
2002-12-09 |
2005-10-28 |
Commissariat Energie Atomique |
Procede de realisation d'une structure contrainte destinee a etre dissociee
|
JP4647193B2
(ja)
*
|
2003-04-11 |
2011-03-09 |
株式会社秀峰 |
シェーバー用ガードブレードおよびそれを使用したシェーバー
|
FR2856844B1
(fr)
*
|
2003-06-24 |
2006-02-17 |
Commissariat Energie Atomique |
Circuit integre sur puce de hautes performances
|
FR2857953B1
(fr)
|
2003-07-21 |
2006-01-13 |
Commissariat Energie Atomique |
Structure empilee, et procede pour la fabriquer
|
FR2861497B1
(fr)
*
|
2003-10-28 |
2006-02-10 |
Soitec Silicon On Insulator |
Procede de transfert catastrophique d'une couche fine apres co-implantation
|
US7354815B2
(en)
*
|
2003-11-18 |
2008-04-08 |
Silicon Genesis Corporation |
Method for fabricating semiconductor devices using strained silicon bearing material
|
FR2889887B1
(fr)
*
|
2005-08-16 |
2007-11-09 |
Commissariat Energie Atomique |
Procede de report d'une couche mince sur un support
|
US20070062047A1
(en)
*
|
2005-09-19 |
2007-03-22 |
Andrew Zhuk |
Razor blades
|
US8293619B2
(en)
|
2008-08-28 |
2012-10-23 |
Silicon Genesis Corporation |
Layer transfer of films utilizing controlled propagation
|
US9362439B2
(en)
|
2008-05-07 |
2016-06-07 |
Silicon Genesis Corporation |
Layer transfer of films utilizing controlled shear region
|
US7811900B2
(en)
*
|
2006-09-08 |
2010-10-12 |
Silicon Genesis Corporation |
Method and structure for fabricating solar cells using a thick layer transfer process
|
US8993410B2
(en)
|
2006-09-08 |
2015-03-31 |
Silicon Genesis Corporation |
Substrate cleaving under controlled stress conditions
|
FR2910179B1
(fr)
*
|
2006-12-19 |
2009-03-13 |
Commissariat Energie Atomique |
PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
|
FR2922359B1
(fr)
*
|
2007-10-12 |
2009-12-18 |
Commissariat Energie Atomique |
Procede de fabrication d'une structure micro-electronique impliquant un collage moleculaire
|
FR2925221B1
(fr)
*
|
2007-12-17 |
2010-02-19 |
Commissariat Energie Atomique |
Procede de transfert d'une couche mince
|
US8330126B2
(en)
*
|
2008-08-25 |
2012-12-11 |
Silicon Genesis Corporation |
Race track configuration and method for wafering silicon solar substrates
|
US8329557B2
(en)
*
|
2009-05-13 |
2012-12-11 |
Silicon Genesis Corporation |
Techniques for forming thin films by implantation with reduced channeling
|
FR2947098A1
(fr)
*
|
2009-06-18 |
2010-12-24 |
Commissariat Energie Atomique |
Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
|