RU2008112657A - Полупроводниковое устройство - Google Patents
Полупроводниковое устройство Download PDFInfo
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- RU2008112657A RU2008112657A RU2008112657/28A RU2008112657A RU2008112657A RU 2008112657 A RU2008112657 A RU 2008112657A RU 2008112657/28 A RU2008112657/28 A RU 2008112657/28A RU 2008112657 A RU2008112657 A RU 2008112657A RU 2008112657 A RU2008112657 A RU 2008112657A
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- 239000004065 semiconductor Substances 0.000 title claims abstract 38
- 239000010410 layer Substances 0.000 claims abstract 56
- 239000000758 substrate Substances 0.000 claims abstract 10
- 239000011229 interlayer Substances 0.000 claims abstract 8
- 230000001681 protective effect Effects 0.000 claims abstract 5
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Abstract
1. Полупроводниковое устройство, содержащее ! полупроводниковую подложку; ! слой межсоединений, расположенный на полупроводниковой подложке; ! межслойную изоляционную пленку и проводящий слой, которые расположены на слое межсоединений так, что проводящий слой образует сотовую структуру относительно плоскости, параллельной главной плоскости полупроводниковой подложки, а межслойная изоляционная пленка заполняет шестиугольные столбики сотовой структуры так, чтобы она была электрически соединена со слоем межсоединений; и ! самый верхний слой межсоединений, расположенный на межслойной изоляционной пленке и проводящем слое так, чтобы он был электрически соединен со слоем межсоединений посредством проводящего слоя. ! 2. Полупроводниковое устройство по п.1, дополнительно содержащее другую межслойную изоляционную пленку, расположенную между полупроводниковой подложкой и слоем межсоединений, и элемент устройства, образованный в полупроводниковой подложке, причем самый верхний слой межсоединений покрывает элемент устройства. ! 3. Полупроводниковое устройство по п.1, в котором слой межсоединений является большим по площади, чем самый верхний слой межсоединений. ! 4. Полупроводниковое устройство по п.2, в котором слой межсоединений является большим по площади, чем самый верхний слой межсоединений. ! 5. Полупроводниковое устройство по п.1, в котором самый верхний слой межсоединений содержит контактную площадку. ! 6. Полупроводниковое устройство по п.2, в котором самый верхний слой межсоединений содержит контактную площадку. ! 7. Полупроводниковое устройство по п.1, дополнительно содержащее защитную пленку, расположенн�
Claims (20)
1. Полупроводниковое устройство, содержащее
полупроводниковую подложку;
слой межсоединений, расположенный на полупроводниковой подложке;
межслойную изоляционную пленку и проводящий слой, которые расположены на слое межсоединений так, что проводящий слой образует сотовую структуру относительно плоскости, параллельной главной плоскости полупроводниковой подложки, а межслойная изоляционная пленка заполняет шестиугольные столбики сотовой структуры так, чтобы она была электрически соединена со слоем межсоединений; и
самый верхний слой межсоединений, расположенный на межслойной изоляционной пленке и проводящем слое так, чтобы он был электрически соединен со слоем межсоединений посредством проводящего слоя.
2. Полупроводниковое устройство по п.1, дополнительно содержащее другую межслойную изоляционную пленку, расположенную между полупроводниковой подложкой и слоем межсоединений, и элемент устройства, образованный в полупроводниковой подложке, причем самый верхний слой межсоединений покрывает элемент устройства.
3. Полупроводниковое устройство по п.1, в котором слой межсоединений является большим по площади, чем самый верхний слой межсоединений.
4. Полупроводниковое устройство по п.2, в котором слой межсоединений является большим по площади, чем самый верхний слой межсоединений.
5. Полупроводниковое устройство по п.1, в котором самый верхний слой межсоединений содержит контактную площадку.
6. Полупроводниковое устройство по п.2, в котором самый верхний слой межсоединений содержит контактную площадку.
7. Полупроводниковое устройство по п.1, дополнительно содержащее защитную пленку, расположенную на самом верхнем слое межсоединений и имеющую отверстие, в котором обнажен участок самого верхнего слоя межсоединений, причем слой межсоединений является большим, чем это отверстие.
8. Полупроводниковое устройство по п.2, дополнительно содержащее защитную пленку, расположенную на самом верхнем слое межсоединений и имеющую отверстие, в котором обнажен участок самого верхнего слоя межсоединений, причем слой межсоединений является большим, чем это отверстие.
9. Полупроводниковое устройство по п.5, дополнительно содержащее защитную пленку, расположенную на самом верхнем слое межсоединений и имеющую отверстие, в котором обнажен участок самого верхнего слоя межсоединений, причем слой межсоединений является большим, чем это отверстие.
10. Полупроводниковое устройство по п.6, дополнительно содержащее защитную пленку, расположенную на самом верхнем слое межсоединений и имеющую отверстие, в котором обнажен участок самого верхнего слоя межсоединений, причем слой межсоединений является большим, чем это отверстие.
11. Полупроводниковое устройство по п.1, в котором ширина проводящего слоя больше или равна утроенному расстоянию между парой противоположных боковых поверхностей шестиугольного столбика сотовой структуры.
12. Полупроводниковое устройство по п.2, в котором ширина проводящего слоя больше или равна утроенному расстоянию между парой противоположных боковых поверхностей шестиугольного столбика сотовой структуры.
13. Полупроводниковое устройство по п.3, в котором ширина проводящего слоя больше или равна утроенному расстоянию между парой противоположных боковых поверхностей шестиугольного столбика сотовой структуры.
14. Полупроводниковое устройство по п.4, в котором ширина проводящего слоя больше или равна утроенному расстоянию между парой противоположных боковых поверхностей шестиугольного столбика сотовой структуры.
15. Полупроводниковое устройство по п.5, в котором ширина проводящего слоя больше или равна утроенному расстоянию между парой противоположных боковых поверхностей шестиугольного столбика сотовой структуры.
16. Полупроводниковое устройство по п.6, в котором ширина проводящего слоя больше или равна утроенному расстоянию между парой противоположных боковых поверхностей шестиугольного столбика сотовой структуры.
17. Полупроводниковое устройство по п.7, в котором ширина проводящего слоя больше или равна утроенному расстоянию между парой противоположных боковых поверхностей шестиугольного столбика сотовой структуры.
18. Полупроводниковое устройство по п.8, в котором ширина проводящего слоя больше или равна утроенному расстоянию между парой противоположных боковых поверхностей шестиугольного столбика сотовой структуры.
19. Полупроводниковое устройство по п.9, в котором ширина проводящего слоя больше или равна утроенному расстоянию между парой противоположных боковых поверхностей шестиугольного столбика сотовой структуры.
20. Полупроводниковое устройство по п.10, в котором ширина проводящего слоя больше или равна утроенному расстоянию между парой противоположных боковых поверхностей шестиугольного столбика сотовой структуры.
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JP2007-096327 | 2007-04-02 | ||
JP2007096327A JP2008258258A (ja) | 2007-04-02 | 2007-04-02 | 半導体装置 |
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RU (1) | RU2447540C2 (ru) |
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CN101281893B (zh) | 2010-06-16 |
KR20080090304A (ko) | 2008-10-08 |
RU2447540C2 (ru) | 2012-04-10 |
US20080237877A1 (en) | 2008-10-02 |
US7741724B2 (en) | 2010-06-22 |
TWI370500B (en) | 2012-08-11 |
JP2008258258A (ja) | 2008-10-23 |
CN101281893A (zh) | 2008-10-08 |
TW200845252A (en) | 2008-11-16 |
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