NO20083111L - Fremgangsmate og prosess for produksjon av en blokk krystallinsk materiale - Google Patents

Fremgangsmate og prosess for produksjon av en blokk krystallinsk materiale

Info

Publication number: NO20083111L
Authority: NO; Norway
Prior art keywords: crucible; cooling system; induction coil; heat source; producing
Prior art date: 2006-01-04

Application number

NO20083111A

Other languages

English (en)

Norwegian (no)

Inventor

Roland Einhaus

Pascal Rivat

Francois Lissalde

Original Assignee

Apollon Solar

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2006-01-04

Filing date

2008-07-11

Publication date

2008-09-01

2008-07-11 Application filed by Apollon Solar filed Critical Apollon Solar

2008-09-01 Publication of NO20083111L publication Critical patent/NO20083111L/no

Links

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/102—Apparatus for forming a platelet shape or a small diameter, elongate, generally cylindrical shape [e.g., whisker, fiber, needle, filament]
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Silicon Compounds (AREA)
Recrystallisation Techniques (AREA)
Powder Metallurgy (AREA)
Developing Agents For Electrophotography (AREA)
Physical Or Chemical Processes And Apparatus (AREA)

NO20083111A 2006-01-04 2008-07-11 Fremgangsmate og prosess for produksjon av en blokk krystallinsk materiale NO20083111L (no)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
FR0600049A FR2895749B1 (fr)	2006-01-04	2006-01-04	Dispositif et procede de fabrication d'un bloc de materiau cristallin
PCT/FR2006/002661 WO2007077305A1 (fr)	2006-01-04	2006-12-06	Dispositif et procede de fabrication d'un bloc de materiau cristallin

Publications (1)

Publication Number	Publication Date
NO20083111L true NO20083111L (no)	2008-09-01

Family

ID=36764649

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NO20083111A NO20083111L (no)	2006-01-04	2008-07-11	Fremgangsmate og prosess for produksjon av en blokk krystallinsk materiale

Country Status (12)

Country	Link
US (2)	US8216373B2 (ru)
EP (1)	EP1969163B1 (ru)
JP (1)	JP2009522201A (ru)
CN (1)	CN101356305B (ru)
BR (1)	BRPI0620894A2 (ru)
ES (1)	ES2387996T3 (ru)
FR (1)	FR2895749B1 (ru)
NO (1)	NO20083111L (ru)
PL (1)	PL1969163T3 (ru)
RU (1)	RU2428524C2 (ru)
WO (1)	WO2007077305A1 (ru)
ZA (1)	ZA200805389B (ru)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE102008039457A1 (de) *	2008-08-25	2009-09-17	Schott Ag	Vorrichtung und Verfahren zum gerichteten Erstarren einer Schmelze
IT1396762B1 (it) *	2009-10-21	2012-12-14	Saet Spa	Dispositivo per l'ottenimento di un materiale semiconduttore multicristallino, in particolare silicio, e metodo per il controllo della temperatura nello stesso
US20110180229A1 (en) *	2010-01-28	2011-07-28	Memc Singapore Pte. Ltd. (Uen200614794D)	Crucible For Use In A Directional Solidification Furnace
US20120248286A1 (en)	2011-03-31	2012-10-04	Memc Singapore Pte. Ltd. (Uen200614794D)	Systems For Insulating Directional Solidification Furnaces
CN103537114B (zh) *	2013-10-16	2015-12-02	科迈化工股份有限公司	控制促进剂mbt生产中降温的结晶釜装置及方法
BR112020021443A2 (pt) *	2018-05-25	2021-01-19	Philip Morris Products S.A.	Conjunto susceptor para geração de aerossol compreendendo um tubo susceptor
GB2586634B (en) *	2019-08-30	2022-04-20	Dyson Technology Ltd	Multizone crucible apparatus

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2543752B2 (de) *	1975-10-01	1979-03-15	Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt	Verfahren und Vorrichtung zum Herstellen eines Einkristalles
DE3316546C1 (de) *	1983-05-06	1984-04-26	Philips Patentverwaltung Gmbh, 2000 Hamburg	Kalter Tiegel fuer das Erschmelzen und die Kristallisation nichtmetallischer anorganischer Verbindungen
JPS63166711A (ja) *	1986-12-26	1988-07-09	Osaka Titanium Seizo Kk	多結晶シリコン鋳塊の製造法
JPS6418987A (en) *	1987-07-14	1989-01-23	Sony Corp	Single crystal growth unit
JPH01142464U (ru) *	1988-03-23	1989-09-29
JPH06234590A (ja) *	1993-02-09	1994-08-23	Furukawa Electric Co Ltd:The	化合物半導体単結晶の製造方法とその装置
JP3388664B2 (ja) *	1995-12-28	2003-03-24	シャープ株式会社	多結晶半導体の製造方法および製造装置
DE19607098C2 (de) *	1996-02-24	1999-06-17	Ald Vacuum Techn Gmbh	Verfahren und Vorrichtung zum gerichteten Erstarren einer Schmelze aus Silizium zu einem Block in einem bodenlosen metallischen Kaltwandtiegel
JPH10139580A (ja) *	1996-11-13	1998-05-26	Japan Steel Works Ltd:The	一方向凝固材の製造方法および一方向凝固装置
JPH10259100A (ja) *	1997-03-18	1998-09-29	Japan Energy Corp	ＧａＡｓ単結晶の製造方法
JPH11310496A (ja) *	1998-02-25	1999-11-09	Mitsubishi Materials Corp	一方向凝固組織を有するシリコンインゴットの製造方法およびその製造装置
US6143070A (en) *	1998-05-15	2000-11-07	The United States Of America As Represented By The Secretary Of The Air Force	Silicon-germanium bulk alloy growth by liquid encapsulated zone melting
JP3964070B2 (ja) *	1999-04-08	2007-08-22	三菱マテリアルテクノ株式会社	結晶シリコン製造装置
JP3885452B2 (ja) *	1999-04-30	2007-02-21	三菱マテリアル株式会社	結晶シリコンの製造方法
FR2853913B1 (fr) *	2003-04-17	2006-09-29	Apollon Solar	Creuset pour un dispositif de fabrication d'un bloc de materiau cristallin et procede de fabrication
JP2005306669A (ja) *	2004-04-22	2005-11-04	Sumco Corp	シリコン単結晶の引上げ装置及びその方法
JP2005336021A (ja) *	2004-05-28	2005-12-08	Sumco Corp	単結晶引き上げ装置

2006
- 2006-01-04 FR FR0600049A patent/FR2895749B1/fr not_active Expired - Fee Related
- 2006-12-06 RU RU2008131945/05A patent/RU2428524C2/ru not_active IP Right Cessation
- 2006-12-06 EP EP06841868A patent/EP1969163B1/fr not_active Not-in-force
- 2006-12-06 WO PCT/FR2006/002661 patent/WO2007077305A1/fr active Application Filing
- 2006-12-06 BR BRPI0620894-0A patent/BRPI0620894A2/pt not_active IP Right Cessation
- 2006-12-06 PL PL06841868T patent/PL1969163T3/pl unknown
- 2006-12-06 CN CN2006800504295A patent/CN101356305B/zh not_active Expired - Fee Related
- 2006-12-06 JP JP2008549034A patent/JP2009522201A/ja active Pending
- 2006-12-06 US US12/087,308 patent/US8216373B2/en not_active Expired - Fee Related
- 2006-12-06 ES ES06841868T patent/ES2387996T3/es active Active
2008
- 2008-06-20 ZA ZA200805389A patent/ZA200805389B/xx unknown
- 2008-07-11 NO NO20083111A patent/NO20083111L/no not_active Application Discontinuation
2012
- 2012-02-09 US US13/369,432 patent/US20120141336A1/en not_active Abandoned

Also Published As

Publication number	Publication date
FR2895749A1 (fr)	2007-07-06
EP1969163B1 (fr)	2012-05-16
US8216373B2 (en)	2012-07-10
US20100083895A1 (en)	2010-04-08
RU2008131945A (ru)	2010-02-10
RU2428524C2 (ru)	2011-09-10
FR2895749B1 (fr)	2008-05-02
EP1969163A1 (fr)	2008-09-17
BRPI0620894A2 (pt)	2011-11-29
ZA200805389B (en)	2009-10-28
US20120141336A1 (en)	2012-06-07
ES2387996T3 (es)	2012-10-05
CN101356305A (zh)	2009-01-28
JP2009522201A (ja)	2009-06-11
WO2007077305A1 (fr)	2007-07-12
CN101356305B (zh)	2011-07-20
PL1969163T3 (pl)	2012-10-31

Legal Events

Date	Code	Title	Description
2013-07-29	FC2A	Withdrawal, rejection or dismissal of laid open patent application

Publication	Publication Date	Title
NO20083111L (no)	2008-09-01	Fremgangsmate og prosess for produksjon av en blokk krystallinsk materiale
RU2012113230A (ru)	2013-10-20	Способ и устройство для выращивания монокристаллов сапфира
JP5405063B2 (ja)	2014-02-05	熱伝導率を調整することによって結晶質材料のブロックを製造するための装置
KR20130130014A (ko)	2013-11-29	방향성 응고에 의한 고-순도 알루미늄의 제조방법 및 이를 위한 용해로
RU2011101453A (ru)	2012-07-27	Системы и способы выращивания монокристаллических кремниевых слитков путем направленного отверждения
EP3066235B1 (en)	2019-05-01	Controlling a temperature of a crucible inside an oven
JP5953368B2 (ja)	2016-07-20	大きな粒子径を有する多結晶材料を製造するための装置及び方法
CN105887186B (zh)	2020-04-24	硅单晶提拉设备与生长方法
CN103710741A (zh)	2014-04-09	单晶长晶装置及长晶方法
CN103343387B (zh)	2016-03-30	一种多晶硅铸锭炉及其铸锭方法
TW201335445A (zh)	2013-09-01	製造單晶矽的方法
JP2014527013A5 (ru)	2015-08-27
CN103966657B (zh)	2017-04-19	一种多晶硅和准单晶硅铸锭炉及其使用方法
CN103952759A (zh)	2014-07-30	加热体内置的坩埚下降法制备氟化钙晶体的方法及装置
CN103668427A (zh)	2014-03-26	铸造大尺寸硅锭的方法
CN106048718B (zh)	2018-10-12	一种多晶硅半熔铸锭用排杂方法
CN103890240B (zh)	2018-04-17	设置有附加横向热源的通过定向固化制造晶体材料的设备
KR20050057815A (ko)	2005-06-16	단결정 성장장치
CN202323114U (zh)	2012-07-11	一种多晶硅铸锭炉底部冷却装置和使用该冷却装置的多晶硅铸锭炉
KR100902859B1 (ko)	2009-06-16	태양전지용 실리콘 제조용 캐스팅 장치
CN102438773B (zh)	2015-04-01	由感应法生产多晶硅锭的方法及其实施装置
CN106119956B (zh)	2019-04-12	一种多晶硅半熔铸锭方法
JP5449645B2 (ja)	2014-03-19	熱処理用シリコンプレートの製造方法。
CN103184500A (zh)	2013-07-03	一种晶体生长装置及利用该装置生长晶体的方法
Dughiero et al.	2011	Multi-crystalline silicon ingots growth with an innovative induction heating directional solidification furnace