NO20082052L - Poleringspasta og fremgangsmate for anvendelse av denne - Google Patents

Poleringspasta og fremgangsmate for anvendelse av denne

Info

Publication number
NO20082052L
NO20082052L NO20082052A NO20082052A NO20082052L NO 20082052 L NO20082052 L NO 20082052L NO 20082052 A NO20082052 A NO 20082052A NO 20082052 A NO20082052 A NO 20082052A NO 20082052 L NO20082052 L NO 20082052L
Authority
NO
Norway
Prior art keywords
particles
abrasive particles
abrasive
hard
polishing paste
Prior art date
Application number
NO20082052A
Other languages
English (en)
Norwegian (no)
Inventor
Ronald W Laconto
Andrew G Haerle
Original Assignee
Saint Gobain Ceramics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Ceramics filed Critical Saint Gobain Ceramics
Publication of NO20082052L publication Critical patent/NO20082052L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1472—Non-aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991—Coated
    • Y10T428/2993—Silicic or refractory material containing [e.g., tungsten oxide, glass, cement, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
NO20082052A 2005-09-30 2008-04-29 Poleringspasta og fremgangsmate for anvendelse av denne NO20082052L (no)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US72227005P 2005-09-30 2005-09-30
US75555405P 2005-12-30 2005-12-30
PCT/US2006/037825 WO2007041199A2 (en) 2005-09-30 2006-09-29 Polishing slurries and methods for utilizing same

Publications (1)

Publication Number Publication Date
NO20082052L true NO20082052L (no) 2008-04-29

Family

ID=37499367

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20082052A NO20082052L (no) 2005-09-30 2008-04-29 Poleringspasta og fremgangsmate for anvendelse av denne

Country Status (11)

Country Link
US (1) US8105135B2 (ko)
EP (1) EP1928966A2 (ko)
JP (1) JP2009509784A (ko)
KR (1) KR101022982B1 (ko)
AU (1) AU2006297240B2 (ko)
BR (1) BRPI0616706A2 (ko)
CA (1) CA2624246A1 (ko)
IL (1) IL190409A0 (ko)
NO (1) NO20082052L (ko)
TW (1) TW200724633A (ko)
WO (1) WO2007041199A2 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8721917B2 (en) * 2007-10-05 2014-05-13 Saint-Gobain Ceramics & Plastics, Inc. Polishing of sapphire with composite slurries
KR101323577B1 (ko) * 2007-10-05 2013-10-30 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 개선된 탄화규소 입자, 그 제조방법 및 그의 이용 방법
US20100062287A1 (en) * 2008-09-10 2010-03-11 Seagate Technology Llc Method of polishing amorphous/crystalline glass to achieve a low rq & wq
US9567492B2 (en) * 2014-08-28 2017-02-14 Sinmat, Inc. Polishing of hard substrates with soft-core composite particles
JP6756460B2 (ja) * 2014-12-26 2020-09-16 株式会社フジミインコーポレーテッド 研磨方法及びセラミック製部品の製造方法
JP2017002166A (ja) 2015-06-09 2017-01-05 テイカ株式会社 ガラス及びセラミック研磨用組成物
JP6694745B2 (ja) * 2016-03-31 2020-05-20 株式会社フジミインコーポレーテッド 研磨用組成物
US11078380B2 (en) 2017-07-10 2021-08-03 Entegris, Inc. Hard abrasive particle-free polishing of hard materials
US11901186B2 (en) * 2018-02-22 2024-02-13 Massachusetts Institute Of Technology Method of reducing semiconductor substrate surface unevenness
US11597854B2 (en) * 2019-07-16 2023-03-07 Cmc Materials, Inc. Method to increase barrier film removal rate in bulk tungsten slurry

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60172465A (ja) 1984-02-20 1985-09-05 Nec Corp 高密度磁気デイスク基板の研磨方法
US5086021A (en) * 1990-06-28 1992-02-04 E. I. Du Pont De Nemours And Company Dielectric composition
US5102769A (en) * 1991-02-04 1992-04-07 Xerox Corporation Solution coated carrier particles
US5607718A (en) * 1993-03-26 1997-03-04 Kabushiki Kaisha Toshiba Polishing method and polishing apparatus
US5441549A (en) * 1993-04-19 1995-08-15 Minnesota Mining And Manufacturing Company Abrasive articles comprising a grinding aid dispersed in a polymeric blend binder
US5487965A (en) * 1994-09-06 1996-01-30 Xerox Corporation Processes for the preparation of developer compositions
US5521046A (en) * 1995-03-13 1996-05-28 Olin Corporation Liquid colored toner compositions with fumed silica
US5837436A (en) * 1995-07-28 1998-11-17 Fuji Photo Film Co., Ltd. Silver halide color photographic material and package thereof
US5935772A (en) * 1995-11-21 1999-08-10 Fuji Photo Film Co., Ltd. Silver halide photographic light-sensitive material and package thereof
GB2311996A (en) * 1996-04-12 1997-10-15 Reckitt & Colman Inc Hard surface scouring cleansers `
EP0940833B1 (fr) * 1998-03-05 2002-07-03 Frédéric Piguet S.A. Mécanisme de quantième pour mouvement d'horlogerie
KR100581649B1 (ko) * 1998-06-10 2006-05-23 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 금속 ｃｍｐ에서 광택화를 위한 조성물 및 방법
US6818153B2 (en) * 1998-10-13 2004-11-16 Peter Burnell-Jones Photocurable thermosetting luminescent resins
JP2000336344A (ja) * 1999-03-23 2000-12-05 Seimi Chem Co Ltd 研磨剤
JP4151179B2 (ja) 1999-11-22 2008-09-17 Ｊｓｒ株式会社 複合粒子の製造方法及びこの方法により製造される複合粒子並びに複合粒子を含有する化学機械研磨用水系分散体
US20020039839A1 (en) * 1999-12-14 2002-04-04 Thomas Terence M. Polishing compositions for noble metals
MXPA03001954A (es) * 2000-09-08 2003-09-10 3M Innovative Properties Co Hoja abrasiva, metodo de manufactura de la misma y metodo de abrasion de un conector de fibra optica.
DE60125808T2 (de) * 2000-10-06 2007-10-11 3M Innovative Properties Co., St. Paul Keramische aggregatteilchen
MXPA03003063A (es) * 2000-10-16 2004-02-12 3M Innovative Properties Co Metodo para elaborar particulas de agregado ceramico.
TWI292780B (ko) 2000-12-12 2008-01-21 Showa Denko Kk
US20040011991A1 (en) 2001-06-13 2004-01-22 Markle Richard J. Use of a gettering agent in a chemical mechanical polishing and rinsing operation and apparatus therefor
MY144587A (en) * 2001-06-21 2011-10-14 Kao Corp Polishing composition
JP3895949B2 (ja) * 2001-07-18 2007-03-22 株式会社東芝 Ｃｍｐ用スラリー、およびこれを用いた半導体装置の製造方法
US20030211747A1 (en) * 2001-09-13 2003-11-13 Nyacol Nano Technologies, Inc Shallow trench isolation polishing using mixed abrasive slurries
US20030092271A1 (en) * 2001-09-13 2003-05-15 Nyacol Nano Technologies, Inc. Shallow trench isolation polishing using mixed abrasive slurries
US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
US7513920B2 (en) * 2002-02-11 2009-04-07 Dupont Air Products Nanomaterials Llc Free radical-forming activator attached to solid and used to enhance CMP formulations
US20030171078A1 (en) * 2002-03-06 2003-09-11 Fuji Photo Film Co., Ltd. Polishing member and method for polishing end faces of optical fibers
US6604987B1 (en) * 2002-06-06 2003-08-12 Cabot Microelectronics Corporation CMP compositions containing silver salts
JP2004200268A (ja) * 2002-12-17 2004-07-15 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
US6896591B2 (en) 2003-02-11 2005-05-24 Cabot Microelectronics Corporation Mixed-abrasive polishing composition and method for using the same
JP2004247605A (ja) * 2003-02-14 2004-09-02 Toshiba Corp Ｃｍｐ用スラリーおよび半導体装置の製造方法
US20040216388A1 (en) * 2003-03-17 2004-11-04 Sharad Mathur Slurry compositions for use in a chemical-mechanical planarization process
JP4322035B2 (ja) * 2003-04-03 2009-08-26 ニッタ・ハース株式会社 半導体基板用研磨組成物及びこれを用いた半導体基板研磨方法
US20050056810A1 (en) 2003-09-17 2005-03-17 Jinru Bian Polishing composition for semiconductor wafers
JP2005236275A (ja) * 2004-01-23 2005-09-02 Jsr Corp 化学機械研磨用水系分散体および化学機械研磨方法
JP4433918B2 (ja) * 2004-07-15 2010-03-17 コニカミノルタエムジー株式会社 画像形成方法
US20060065989A1 (en) * 2004-09-29 2006-03-30 Thad Druffel Lens forming systems and methods

Also Published As

Publication number Publication date
IL190409A0 (en) 2008-11-03
WO2007041199A3 (en) 2007-06-28
WO2007041199A2 (en) 2007-04-12
KR101022982B1 (ko) 2011-03-18
BRPI0616706A2 (pt) 2011-06-28
US8105135B2 (en) 2012-01-31
JP2009509784A (ja) 2009-03-12
AU2006297240A1 (en) 2007-04-12
KR20080059606A (ko) 2008-06-30
TW200724633A (en) 2007-07-01
AU2006297240B2 (en) 2009-04-09
EP1928966A2 (en) 2008-06-11
CA2624246A1 (en) 2007-04-12
US20070087667A1 (en) 2007-04-19

Similar Documents

Publication Publication Date Title
NO20082052L (no) Poleringspasta og fremgangsmate for anvendelse av denne
MY155900A (en) Cleaning and/or polishing compositions and method for use thereof
TWI316083B (en) Electrochemical-mechanical polishing composition and method for using the same
MY146929A (en) Polishing pad
TW200631999A (en) Polishing pad
MX2009010035A (es) Articulos abrasivos, herramientas alternantes rotacionales y metodos.
MX2009010119A (es) Metodos para remover defectos en superficies.
DK1660606T3 (da) Slibepartikler til kemisk-mekanisk polering
TW200714406A (en) Use of cmp for aluminum mirror and solar cell fabrication
GB2405410B (en) Porous abrasive articles with agglomerated abrasives and method for making the agglomerated abrasives
DE602006019876D1 (de) Schleifagglomeratpolierverfahren
DE60219532D1 (de) Gesintertes, polykristallines zirkonia enthaltende schleifteilchen
IL187704A0 (en) Polishing pad comprising magnetically sensitive particles and method for the use thereof
GB0424867D0 (en) Abrasive articles with novel structures and methods for grinding
WO2007053611A3 (en) Sanding blocks for use with adhesive-backed sandpaper
MY153077A (en) Method to selectively polish silicon carbide films
ATE536960T1 (de) Feinschleifscheibe, verwendung dieser scheibe sowie verfahren zu ihrer herstellung
MY154806A (en) Compositions and method for cmp of indium tin oxide surfaces
IL179570A0 (en) Cmp composition for improved oxide removal rate
HUP0204419A2 (en) Abrasive article bonded using a hybrid bond
TW200626287A (en) Method of sharpening cutting edges
TW200716730A (en) Polishing composition and polishing method
WO2006113447A3 (en) Superabrasive coatings
EP1517972A4 (en) METAL POLISHING COMPOSITION, POLISHING METHOD USING THE SAME, AND METHOD OF PRODUCING SEMICONDUCTOR WAFER USING THE POLISHING METHOD
TW200734120A (en) Polishing grindstone and method for producing same

Legal Events

Date Code Title Description
FC2A Withdrawal, rejection or dismissal of laid open patent application