KR970013003A - 성막 방법 (method for forming film) - Google Patents
성막 방법 (method for forming film) Download PDFInfo
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- KR970013003A KR970013003A KR1019960033147A KR19960033147A KR970013003A KR 970013003 A KR970013003 A KR 970013003A KR 1019960033147 A KR1019960033147 A KR 1019960033147A KR 19960033147 A KR19960033147 A KR 19960033147A KR 970013003 A KR970013003 A KR 970013003A
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- Prior art keywords
- alkyl group
- aryl group
- derivative
- fluorine
- silicon oxide
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract 9
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 8
- 239000011737 fluorine Substances 0.000 claims abstract description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract 5
- 125000000217 alkyl group Chemical group 0.000 claims 6
- 125000003118 aryl group Chemical group 0.000 claims 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- 239000007789 gas Substances 0.000 claims 4
- 150000001282 organosilanes Chemical class 0.000 claims 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 2
- 229910008284 Si—F Inorganic materials 0.000 claims 2
- 150000001343 alkyl silanes Chemical class 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 229910000077 silane Inorganic materials 0.000 claims 2
- 125000004122 cyclic group Chemical group 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02131—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
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Abstract
본 발명은, 열 CVD 법에 의한 불소함유 실리콘 산화막의 성막 방법에 관한 것으로, 기판(6)을 가열한 상태에서 SiF 결합을 가진 유기 실란과 Si-F 결합을 가지지 않은 유기 실란 및 오존함유 가스를 포함하는 혼합가스를 열반응시키어 기판(6)상에 불소함유 실리콘 산화막을 형성한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시양태에 관계되는 불소함유 실리콘 산화막을 형성하는 성막장치의 구성도.
Claims (7)
- 기판을 가열한 상태에서, SiF 결합을 가진 유기 실란과 Si-F 결합을 가지지 않은 유기 실란 및 오존함유 가스를 포함하는 혼합가스를 열반응시키어, 상기 기판 상에 불소함유 실리콘 산화막을 형성하는 단계로 이루어지는 성막 방법.
- 제1항에 있어서, 상기 불소함유 실리콘 산화막을 상압하에서 성막하는 성막 방법.
- 제1항 또는 제2항에 있어서, 상기 Si-F 결합을 가지는 유기 실란이 플루오로알콕시실란(SiFn(OR)4-n, n=1~3, R은 알킬 기, 아릴 기, 또는 그들의 유도체), 알킬실란(SiHnR4-n, n=1~3, R은 알킬 기, 아릴 기, 또는 그들의 유도체), 체인 플루오로실록산(RnH3-nSiO(RkH2-kSiO)mSiH3-nRn, n=1, 2, k=0~2, m≥0, R은 알킬 기, 아릴 기, 또는 그들의 유도체) 또는 링 플루오로실록산(RkF2-kSiO)m, k=1, m≥2, R은 알킬 기, 아릴 기, 또는 그들의 유도체)으로 구성되어 있는 성막방법.
- 제1항 또는 제2항에 있어서, 상기 Si-F 결합을 가지지 않은 유기 실란이 알콕시실란(SiHn(OR)4-n, n=1~3, R은 알킬 기, 아릴 기, 또는 그들의 유도체), 알킬실란(SiHnR4-n, n=1~3, R은 알킬 기, 아릴 기, 또는 그들의 유도체), 체인 실록산(RnH3-nSiO(RkH2-kSiO)mSiH3-nRn, n=1, 2, k=0~2, m≥0, R은 알킬 기, 아릴 기, 또는 그들의 유도체) 또는 링 실록산(RkH2-kSiO)m, k=1, m≥2, R은 알킬 기, 아릴 기, 또는 그들의 유도체)으로 구성되어 있는 성막방법.
- 제1항, 제2항, 제3항, 또는 제4항에 있어서, 상기 오존함유 가스가 오존(O3)과 산소(O2)로 이루어지는 가스인 성막방법.
- 제1항에 있어서, 상기 기판상에 불소함유 실리콘 산화막을 형성한 후 상기 기판을 가열한 상태에서 적어도 산소 또는 질소의 하나를 포함하는 플라즈마에 상기 불소함유 실리콘 산화막을 노출시키는 단계를 더 함유하는 성막 방법.
- 제6항에 있어서, 상기 산소 또는 질소의 적어도 하나를 포함하는 플라즈마가 O2, NO, NO2또는 N2O의 플라즈마인 성막 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP07-210896 | 1995-08-18 | ||
JP7210896A JP3061255B2 (ja) | 1995-08-18 | 1995-08-18 | 成膜方法 |
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Publication Number | Publication Date |
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KR970013003A true KR970013003A (ko) | 1997-03-29 |
KR100262053B1 KR100262053B1 (ko) | 2000-07-15 |
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Application Number | Title | Priority Date | Filing Date |
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KR1019960033147A KR100262053B1 (ko) | 1995-08-18 | 1996-08-09 | 성막방법 |
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US (1) | US5800877A (ko) |
EP (1) | EP0761841B1 (ko) |
JP (1) | JP3061255B2 (ko) |
KR (1) | KR100262053B1 (ko) |
DE (1) | DE69621723T2 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20030001959A (ko) * | 2001-06-28 | 2003-01-08 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
KR101457260B1 (ko) * | 2008-08-29 | 2014-11-03 | 졸리우드 (수조우) 선왓트 컴퍼니 리미티드 | 고점결성을 갖는 태양전지 백시트 필름 및 가공방법 |
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US6042901A (en) * | 1996-02-20 | 2000-03-28 | Lam Research Corporation | Method for depositing fluorine doped silicon dioxide films |
JP3178375B2 (ja) * | 1997-06-03 | 2001-06-18 | 日本電気株式会社 | 絶縁膜の形成方法 |
US5908672A (en) * | 1997-10-15 | 1999-06-01 | Applied Materials, Inc. | Method and apparatus for depositing a planarized passivation layer |
US6337102B1 (en) | 1997-11-17 | 2002-01-08 | The Trustees Of Princeton University | Low pressure vapor phase deposition of organic thin films |
US6287990B1 (en) | 1998-02-11 | 2001-09-11 | Applied Materials, Inc. | CVD plasma assisted low dielectric constant films |
US6054379A (en) * | 1998-02-11 | 2000-04-25 | Applied Materials, Inc. | Method of depositing a low k dielectric with organo silane |
US6303523B2 (en) | 1998-02-11 | 2001-10-16 | Applied Materials, Inc. | Plasma processes for depositing low dielectric constant films |
US6593247B1 (en) | 1998-02-11 | 2003-07-15 | Applied Materials, Inc. | Method of depositing low k films using an oxidizing plasma |
US6660656B2 (en) | 1998-02-11 | 2003-12-09 | Applied Materials Inc. | Plasma processes for depositing low dielectric constant films |
US6274292B1 (en) | 1998-02-25 | 2001-08-14 | Micron Technology, Inc. | Semiconductor processing methods |
US7804115B2 (en) | 1998-02-25 | 2010-09-28 | Micron Technology, Inc. | Semiconductor constructions having antireflective portions |
US6667553B2 (en) | 1998-05-29 | 2003-12-23 | Dow Corning Corporation | H:SiOC coated substrates |
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1995
- 1995-08-18 JP JP7210896A patent/JP3061255B2/ja not_active Expired - Lifetime
-
1996
- 1996-08-09 KR KR1019960033147A patent/KR100262053B1/ko not_active IP Right Cessation
- 1996-08-09 US US08/694,660 patent/US5800877A/en not_active Expired - Fee Related
- 1996-08-09 DE DE69621723T patent/DE69621723T2/de not_active Expired - Fee Related
- 1996-08-09 EP EP96112891A patent/EP0761841B1/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20030001959A (ko) * | 2001-06-28 | 2003-01-08 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
KR101457260B1 (ko) * | 2008-08-29 | 2014-11-03 | 졸리우드 (수조우) 선왓트 컴퍼니 리미티드 | 고점결성을 갖는 태양전지 백시트 필름 및 가공방법 |
Also Published As
Publication number | Publication date |
---|---|
JP3061255B2 (ja) | 2000-07-10 |
JPH0964029A (ja) | 1997-03-07 |
US5800877A (en) | 1998-09-01 |
DE69621723D1 (de) | 2002-07-18 |
EP0761841A1 (en) | 1997-03-12 |
DE69621723T2 (de) | 2002-11-28 |
EP0761841B1 (en) | 2002-06-12 |
KR100262053B1 (ko) | 2000-07-15 |
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