KR970013003A - 성막 방법 (method for forming film) - Google Patents

성막 방법 (method for forming film) Download PDF

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KR970013003A
KR970013003A KR1019960033147A KR19960033147A KR970013003A KR 970013003 A KR970013003 A KR 970013003A KR 1019960033147 A KR1019960033147 A KR 1019960033147A KR 19960033147 A KR19960033147 A KR 19960033147A KR 970013003 A KR970013003 A KR 970013003A
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alkyl group
aryl group
derivative
fluorine
silicon oxide
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KR1019960033147A
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KR100262053B1 (ko
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가즈오 마에다
노보루 도쿠마스
요시아키 우야마
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다케모토 히데하루
캐논 한바이 가부시키가이샤
가즈오 마에다
가부시키가이샤 한도타이 프로세스 켄큐쇼
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/02107—Forming insulating materials on a substrate
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    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02131—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
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Abstract

본 발명은, 열 CVD 법에 의한 불소함유 실리콘 산화막의 성막 방법에 관한 것으로, 기판(6)을 가열한 상태에서 SiF 결합을 가진 유기 실란과 Si-F 결합을 가지지 않은 유기 실란 및 오존함유 가스를 포함하는 혼합가스를 열반응시키어 기판(6)상에 불소함유 실리콘 산화막을 형성한다.

Description

성막 방법(METHOD FOR FORMING FILM)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시양태에 관계되는 불소함유 실리콘 산화막을 형성하는 성막장치의 구성도.

Claims (7)

  1. 기판을 가열한 상태에서, SiF 결합을 가진 유기 실란과 Si-F 결합을 가지지 않은 유기 실란 및 오존함유 가스를 포함하는 혼합가스를 열반응시키어, 상기 기판 상에 불소함유 실리콘 산화막을 형성하는 단계로 이루어지는 성막 방법.
  2. 제1항에 있어서, 상기 불소함유 실리콘 산화막을 상압하에서 성막하는 성막 방법.
  3. 제1항 또는 제2항에 있어서, 상기 Si-F 결합을 가지는 유기 실란이 플루오로알콕시실란(SiFn(OR)4-n, n=1~3, R은 알킬 기, 아릴 기, 또는 그들의 유도체), 알킬실란(SiHnR4-n, n=1~3, R은 알킬 기, 아릴 기, 또는 그들의 유도체), 체인 플루오로실록산(RnH3-nSiO(RkH2-kSiO)mSiH3-nRn, n=1, 2, k=0~2, m≥0, R은 알킬 기, 아릴 기, 또는 그들의 유도체) 또는 링 플루오로실록산(RkF2-kSiO)m, k=1, m≥2, R은 알킬 기, 아릴 기, 또는 그들의 유도체)으로 구성되어 있는 성막방법.
  4. 제1항 또는 제2항에 있어서, 상기 Si-F 결합을 가지지 않은 유기 실란이 알콕시실란(SiHn(OR)4-n, n=1~3, R은 알킬 기, 아릴 기, 또는 그들의 유도체), 알킬실란(SiHnR4-n, n=1~3, R은 알킬 기, 아릴 기, 또는 그들의 유도체), 체인 실록산(RnH3-nSiO(RkH2-kSiO)mSiH3-nRn, n=1, 2, k=0~2, m≥0, R은 알킬 기, 아릴 기, 또는 그들의 유도체) 또는 링 실록산(RkH2-kSiO)m, k=1, m≥2, R은 알킬 기, 아릴 기, 또는 그들의 유도체)으로 구성되어 있는 성막방법.
  5. 제1항, 제2항, 제3항, 또는 제4항에 있어서, 상기 오존함유 가스가 오존(O3)과 산소(O2)로 이루어지는 가스인 성막방법.
  6. 제1항에 있어서, 상기 기판상에 불소함유 실리콘 산화막을 형성한 후 상기 기판을 가열한 상태에서 적어도 산소 또는 질소의 하나를 포함하는 플라즈마에 상기 불소함유 실리콘 산화막을 노출시키는 단계를 더 함유하는 성막 방법.
  7. 제6항에 있어서, 상기 산소 또는 질소의 적어도 하나를 포함하는 플라즈마가 O2, NO, NO2또는 N2O의 플라즈마인 성막 방법.
KR1019960033147A 1995-08-18 1996-08-09 성막방법 KR100262053B1 (ko)

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JP07-210896 1995-08-18
JP7210896A JP3061255B2 (ja) 1995-08-18 1995-08-18 成膜方法

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KR100262053B1 KR100262053B1 (ko) 2000-07-15

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DE (1) DE69621723T2 (ko)

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KR20030001959A (ko) * 2001-06-28 2003-01-08 주식회사 하이닉스반도체 반도체 소자의 제조 방법
KR101457260B1 (ko) * 2008-08-29 2014-11-03 졸리우드 (수조우) 선왓트 컴퍼니 리미티드 고점결성을 갖는 태양전지 백시트 필름 및 가공방법

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