KR940016447A - 처리장치 - Google Patents

처리장치 Download PDF

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Publication number
KR940016447A
KR940016447A KR1019930026340A KR930026340A KR940016447A KR 940016447 A KR940016447 A KR 940016447A KR 1019930026340 A KR1019930026340 A KR 1019930026340A KR 930026340 A KR930026340 A KR 930026340A KR 940016447 A KR940016447 A KR 940016447A
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KR
South Korea
Prior art keywords
gas
inert gas
filter
processing apparatus
load lock
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KR1019930026340A
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English (en)
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KR100269411B1 (ko
Inventor
하루노리 우시카와
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이노우에 아키라
도오교오 에레구토론 가부시끼가이샤
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Publication of KR940016447A publication Critical patent/KR940016447A/ko
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Publication of KR100269411B1 publication Critical patent/KR100269411B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H01L21/67781—Batch transfer of wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/137—Associated with semiconductor wafer handling including means for charging or discharging wafer cassette

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

로드록실로부터 프로세스튜브내에 반도체웨이퍼를 반입하여 소정의 처리를 행하는 밀폐시스템 구조의 처리장치에 있어서, 로드록실내에 불활성 가스를 공급하는 가스도입관과, 로드록실내의 불활성 가스를 도출하고, 또한 이 도출가스중의 가스상태를 불순물 및 입자상태의 불순물을 가스청정필터에 의하여 제거하면서, 그 청정화된 불활성 가스를 로드록실내로 되돌리는 가스순환정화 시스템을 갖춘 것을 특징으로 함.
그 결과, 로드록실내의 불활성가스 분위기를 고순도로 유지할수 있으며, 불활성 가스의 소비량이 적게 되고, 또한 그 파티클 발생의 억제 및 케미칼 콘테미네이션 방지에 크게 기여하고, 고성능이며 경제적인 처리장치가 얻어진다.

Description

처리장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는, 본 발명의 처리장치의 일실시예를 나타내는 일부파단 종단면이다.

Claims (4)

  1. 웨이퍼보우트대기실(11)로부터 처리실(1)내로 피처리물을 반입하여 이 피처리물에 소정의 처리를 행하는 처리장치로서, 상기 웨이퍼보우트대기실(11)에 불활성 가스를 공급하여 그 안의 분위기 가스압을 적당한 압력으로 유지하는 가스공급수단(12)과, 상기 웨이퍼보우트대기실(11)내의 불활성가스를 그 안으로부터 도출하는 도출수단(41)과, 도출한 불활성가스중의 가스상태의 불순물 및 입자상태의 불순물을 제거하여 청정화하는 가스청정필터(43)와, 청정화된 불활성가스를 상기 웨이퍼보우트대기실(11)에 환류시키는 환류수단(44)으로 이루어지는 가스순환정화 시스템(40)을 구비한 처리장치.
  2. 제 1 항에 있어서, 상기 도출수단(41)에 도출한 불활성 가스를 냉각하는 수단(50)을 구비한 처리장치.
  3. 제 1 항에 있어서, 상기 가스청정필터(43)는 지르코니아등의 급속겟터를 이용한 케미탈용 필터(43e)와 메탈 또는 세라믹스로 이루어지는 파티클용 필터(43d)를 조합시켜 이루어지는 처리장치.
  4. 제 1 항에 있어서, 상기 가스청정필터(43)의 유입측(43a)에 굵기가 0.5㎛ 정도의 파티클용 필터(43d)를, 또한 그의 유출측(43b)에 굴기가 0.01㎛ 정도의 파티클용 필터(43d)를, 또한 양 파티클용 필터의 사이에 케미칼용 필터(43e)를 배치하여 이루어지는 처리장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930026340A 1992-12-04 1993-12-03 처리장치 KR100269411B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP32510992A JP3330166B2 (ja) 1992-12-04 1992-12-04 処理装置
JP92-325109 1992-12-04

Publications (2)

Publication Number Publication Date
KR940016447A true KR940016447A (ko) 1994-07-23
KR100269411B1 KR100269411B1 (ko) 2001-01-15

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KR1019930026340A KR100269411B1 (ko) 1992-12-04 1993-12-03 처리장치

Country Status (3)

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US (1) US5378283A (ko)
JP (1) JP3330166B2 (ko)
KR (1) KR100269411B1 (ko)

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JPS63262470A (ja) * 1987-04-21 1988-10-28 Hitachi Electronics Eng Co Ltd 気相反応装置
US5303671A (en) * 1992-02-07 1994-04-19 Tokyo Electron Limited System for continuously washing and film-forming a semiconductor wafer

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100905262B1 (ko) * 2006-11-06 2009-06-29 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반도체 장치의 제조 방법

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JPH06177066A (ja) 1994-06-24
US5378283A (en) 1995-01-03

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