KR940016447A - 처리장치 - Google Patents
처리장치 Download PDFInfo
- Publication number
- KR940016447A KR940016447A KR1019930026340A KR930026340A KR940016447A KR 940016447 A KR940016447 A KR 940016447A KR 1019930026340 A KR1019930026340 A KR 1019930026340A KR 930026340 A KR930026340 A KR 930026340A KR 940016447 A KR940016447 A KR 940016447A
- Authority
- KR
- South Korea
- Prior art keywords
- gas
- inert gas
- filter
- processing apparatus
- load lock
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
- H01L21/67781—Batch transfer of wafers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
- Y10S414/137—Associated with semiconductor wafer handling including means for charging or discharging wafer cassette
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
로드록실로부터 프로세스튜브내에 반도체웨이퍼를 반입하여 소정의 처리를 행하는 밀폐시스템 구조의 처리장치에 있어서, 로드록실내에 불활성 가스를 공급하는 가스도입관과, 로드록실내의 불활성 가스를 도출하고, 또한 이 도출가스중의 가스상태를 불순물 및 입자상태의 불순물을 가스청정필터에 의하여 제거하면서, 그 청정화된 불활성 가스를 로드록실내로 되돌리는 가스순환정화 시스템을 갖춘 것을 특징으로 함.
그 결과, 로드록실내의 불활성가스 분위기를 고순도로 유지할수 있으며, 불활성 가스의 소비량이 적게 되고, 또한 그 파티클 발생의 억제 및 케미칼 콘테미네이션 방지에 크게 기여하고, 고성능이며 경제적인 처리장치가 얻어진다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는, 본 발명의 처리장치의 일실시예를 나타내는 일부파단 종단면이다.
Claims (4)
- 웨이퍼보우트대기실(11)로부터 처리실(1)내로 피처리물을 반입하여 이 피처리물에 소정의 처리를 행하는 처리장치로서, 상기 웨이퍼보우트대기실(11)에 불활성 가스를 공급하여 그 안의 분위기 가스압을 적당한 압력으로 유지하는 가스공급수단(12)과, 상기 웨이퍼보우트대기실(11)내의 불활성가스를 그 안으로부터 도출하는 도출수단(41)과, 도출한 불활성가스중의 가스상태의 불순물 및 입자상태의 불순물을 제거하여 청정화하는 가스청정필터(43)와, 청정화된 불활성가스를 상기 웨이퍼보우트대기실(11)에 환류시키는 환류수단(44)으로 이루어지는 가스순환정화 시스템(40)을 구비한 처리장치.
- 제 1 항에 있어서, 상기 도출수단(41)에 도출한 불활성 가스를 냉각하는 수단(50)을 구비한 처리장치.
- 제 1 항에 있어서, 상기 가스청정필터(43)는 지르코니아등의 급속겟터를 이용한 케미탈용 필터(43e)와 메탈 또는 세라믹스로 이루어지는 파티클용 필터(43d)를 조합시켜 이루어지는 처리장치.
- 제 1 항에 있어서, 상기 가스청정필터(43)의 유입측(43a)에 굵기가 0.5㎛ 정도의 파티클용 필터(43d)를, 또한 그의 유출측(43b)에 굴기가 0.01㎛ 정도의 파티클용 필터(43d)를, 또한 양 파티클용 필터의 사이에 케미칼용 필터(43e)를 배치하여 이루어지는 처리장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32510992A JP3330166B2 (ja) | 1992-12-04 | 1992-12-04 | 処理装置 |
JP92-325109 | 1992-12-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR940016447A true KR940016447A (ko) | 1994-07-23 |
KR100269411B1 KR100269411B1 (ko) | 2001-01-15 |
Family
ID=18173218
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930026340A KR100269411B1 (ko) | 1992-12-04 | 1993-12-03 | 처리장치 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5378283A (ko) |
JP (1) | JP3330166B2 (ko) |
KR (1) | KR100269411B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100905262B1 (ko) * | 2006-11-06 | 2009-06-29 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 및 반도체 장치의 제조 방법 |
Families Citing this family (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69132324T2 (de) * | 1990-11-16 | 2001-01-04 | Kabushiki Kaisha Watanabe Shoko, Tokio/Tokyo | Methode zum Transportieren von Substraten mit plattenförmiger Grundlage |
JP3134137B2 (ja) * | 1993-01-13 | 2001-02-13 | 東京エレクトロン株式会社 | 縦型処理装置 |
JP3125199B2 (ja) * | 1993-03-18 | 2001-01-15 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
US5527390A (en) * | 1993-03-19 | 1996-06-18 | Tokyo Electron Kabushiki | Treatment system including a plurality of treatment apparatus |
TW273574B (ko) * | 1993-12-10 | 1996-04-01 | Tokyo Electron Co Ltd | |
US5456740A (en) * | 1994-06-22 | 1995-10-10 | Millipore Corporation | High-efficiency metal membrane getter element and process for making |
JPH0874028A (ja) * | 1994-09-01 | 1996-03-19 | Matsushita Electric Ind Co Ltd | 薄膜形成装置および薄膜形成方法 |
JP3982844B2 (ja) * | 1995-01-12 | 2007-09-26 | 株式会社日立国際電気 | 半導体製造装置及び半導体の製造方法 |
JP3354747B2 (ja) * | 1995-05-22 | 2002-12-09 | 株式会社フジクラ | Cvd反応装置および酸化物超電導導体の製造方法 |
JPH0945597A (ja) * | 1995-05-25 | 1997-02-14 | Kokusai Electric Co Ltd | 半導体製造装置及びロードロック室酸素濃度の制御方法及び自然酸化膜の生成方法 |
US5658123A (en) * | 1995-09-15 | 1997-08-19 | Advanced Micro Devices, Inc. | Container-less transfer of semiconductor wafers through a barrier between fabrication areas |
KR100189981B1 (ko) * | 1995-11-21 | 1999-06-01 | 윤종용 | 진공 시스템을 구비한 반도체 소자 제조장치 |
US5806574A (en) * | 1995-12-01 | 1998-09-15 | Shinko Electric Co., Ltd. | Portable closed container |
KR100219406B1 (ko) * | 1996-04-04 | 1999-09-01 | 윤종용 | 화학기상증착설비의 웨이퍼로딩실 공기흐름 안내장치 |
JP3604241B2 (ja) * | 1996-10-31 | 2004-12-22 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
US6157866A (en) * | 1997-06-19 | 2000-12-05 | Advanced Micro Devices, Inc. | Automated material handling system for a manufacturing facility divided into separate fabrication areas |
KR100263901B1 (ko) * | 1997-10-14 | 2000-08-16 | 윤종용 | 반도체 디바이스 제조 장치, hsg-다결정 실리콘막의 제조 방법 및 hsg-다결정 실리콘막을 전극으로 포함하는 커패시터의 제조 방법 |
JPH11168135A (ja) * | 1997-12-03 | 1999-06-22 | Toshiba Corp | 基板保管装置および基板保管方法 |
US6000905A (en) * | 1998-03-13 | 1999-12-14 | Toro-Lira; Guillermo L. | High speed in-vacuum flat panel display handler |
KR100510459B1 (ko) * | 1998-03-17 | 2005-10-24 | 삼성전자주식회사 | 로드 락 챔버용 카세트 사용 시스템 및 그 사용방법 |
US5988233A (en) * | 1998-03-27 | 1999-11-23 | Asyst Technologies, Inc. | Evacuation-driven SMIF pod purge system |
US6032704A (en) * | 1998-04-30 | 2000-03-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for storing wafers without moisture absorption |
FR2779070B1 (fr) | 1998-05-28 | 2000-06-30 | Air Liquide | Dispositif de fourniture d'un gaz epure a une installation purgee avec ce gaz epure |
TW414923B (en) * | 1999-03-30 | 2000-12-11 | Mosel Vitelic Inc | Method of reducing the micro particle contamination of the load-lock |
JP3769417B2 (ja) * | 1999-06-30 | 2006-04-26 | 株式会社東芝 | 基板収納容器 |
US6376387B2 (en) * | 1999-07-09 | 2002-04-23 | Applied Materials, Inc. | Method of sealing an epitaxial silicon layer on a substrate |
JP4578615B2 (ja) | 1999-07-21 | 2010-11-10 | 東京エレクトロン株式会社 | 熱処理装置 |
KR100426818B1 (ko) * | 1999-10-01 | 2004-04-13 | 주성엔지니어링(주) | 반도체 소자 제조 장치 |
US6662225B1 (en) * | 1999-11-16 | 2003-12-09 | Ricoh Company, Ltd. | Remote system usage monitoring with flexible packaging of data |
US6323463B1 (en) * | 2000-03-29 | 2001-11-27 | Applied Materials, Inc. | Method and apparatus for reducing contamination in a wafer loadlock of a semiconductor wafer processing system |
US7241993B2 (en) * | 2000-06-27 | 2007-07-10 | Ebara Corporation | Inspection system by charged particle beam and method of manufacturing devices using the system |
JP4365017B2 (ja) * | 2000-08-23 | 2009-11-18 | 東京エレクトロン株式会社 | 熱処理装置の降温レート制御方法および熱処理装置 |
JP4679720B2 (ja) * | 2000-12-22 | 2011-04-27 | 東京エレクトロン株式会社 | 処理装置 |
JP4633269B2 (ja) * | 2001-01-15 | 2011-02-16 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
US6436194B1 (en) | 2001-02-16 | 2002-08-20 | Applied Materials, Inc. | Method and a system for sealing an epitaxial silicon layer on a substrate |
US7118780B2 (en) * | 2001-03-16 | 2006-10-10 | Semiconductor Energy Laboratory Co., Ltd. | Heat treatment method |
JP3990881B2 (ja) * | 2001-07-23 | 2007-10-17 | 株式会社日立製作所 | 半導体製造装置及びそのクリーニング方法 |
KR100486690B1 (ko) * | 2002-11-29 | 2005-05-03 | 삼성전자주식회사 | 기판 이송 모듈의 오염을 제어할 수 있는 기판 처리 장치및 방법 |
JP4336509B2 (ja) * | 2003-03-07 | 2009-09-30 | キヤノン株式会社 | 処理方法及びシステム |
US7189291B2 (en) * | 2003-06-02 | 2007-03-13 | Entegris, Inc. | Method for the removal of airborne molecular contaminants using oxygen gas mixtures |
DE10358275A1 (de) * | 2003-12-11 | 2005-07-21 | Wiessner Gmbh | Vorrichtung und Verfahren zum Reinigen wenigstens einer Prozesskammer zum Beschichten wenigstens eines Substrats |
GB0329933D0 (en) * | 2003-12-24 | 2004-01-28 | Boc Group Plc | Load lock |
WO2006030849A1 (ja) * | 2004-09-15 | 2006-03-23 | Hitachi Kokusai Electric Inc. | 半導体製造装置および半導体装置の製造方法 |
JP4358077B2 (ja) * | 2004-09-21 | 2009-11-04 | 株式会社東芝 | 成膜装置及び成膜方法 |
WO2007019105A1 (en) * | 2005-08-03 | 2007-02-15 | Entegris, Inc. | A transfer container |
JP2007095879A (ja) * | 2005-09-28 | 2007-04-12 | Hitachi Kokusai Electric Inc | 基板処理装置 |
US20070144118A1 (en) * | 2005-12-22 | 2007-06-28 | Alvarez Daniel Jr | Purging of a wafer conveyance container |
US7651569B2 (en) * | 2006-02-28 | 2010-01-26 | Asm International N.V. | Pedestal for furnace |
JP4684310B2 (ja) * | 2007-08-14 | 2011-05-18 | 株式会社日立国際電気 | 基板処理装置 |
US8443484B2 (en) | 2007-08-14 | 2013-05-21 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus |
US8007275B2 (en) * | 2008-01-25 | 2011-08-30 | Micron Technology, Inc. | Methods and apparatuses for heating semiconductor wafers |
JP2009266962A (ja) * | 2008-04-23 | 2009-11-12 | Hitachi Kokusai Electric Inc | 基板処理装置および半導体装置の製造方法 |
US20100226629A1 (en) * | 2008-07-21 | 2010-09-09 | Solopower, Inc. | Roll-to-roll processing and tools for thin film solar cell manufacturing |
JP4681640B2 (ja) * | 2008-09-30 | 2011-05-11 | 積水化学工業株式会社 | 表面処理方法 |
CN102473641B (zh) * | 2009-08-04 | 2015-04-22 | 佳能安内华股份有限公司 | 热处理设备以及半导体装置制造方法 |
KR20110112074A (ko) * | 2010-04-06 | 2011-10-12 | 삼성전자주식회사 | 기판 처리 장치 및 방법 |
JP5614352B2 (ja) * | 2011-03-29 | 2014-10-29 | 東京エレクトロン株式会社 | ローディングユニット及び処理システム |
JP6133852B2 (ja) | 2011-06-23 | 2017-05-24 | ディーエムエス ダイナミック マイクロシステムズ セミコンダクター イクイップメント ゲーエムベーハーDMS Dynamic Micro Systems Semiconductor Equipment GmbH | 半導体クリーニングシステム及び半導体清浄方法 |
KR101408084B1 (ko) * | 2011-11-17 | 2014-07-04 | 주식회사 유진테크 | 보조가스공급포트를 포함하는 기판 처리 장치 |
US9997384B2 (en) * | 2011-12-01 | 2018-06-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for transporting wafers between wafer holders and chambers |
JP5892113B2 (ja) * | 2013-06-26 | 2016-03-23 | 株式会社ダイフク | 物品保管設備 |
US9650727B2 (en) * | 2013-07-03 | 2017-05-16 | Applied Materials, Inc. | Reactor gas panel common exhaust |
DE102018102693B4 (de) * | 2018-02-07 | 2024-06-27 | VON ARDENNE Asset GmbH & Co. KG | Dehydratationsnetzwerk, Vakuumanordnung und Verfahren |
CN113249784B (zh) * | 2021-05-12 | 2022-03-29 | 中科汇通(内蒙古)投资控股有限公司 | 一种可平衡生长体系气氛的碳化硅单晶生长装置 |
JP7430677B2 (ja) * | 2021-09-21 | 2024-02-13 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法およびプログラム |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR900001666B1 (ko) * | 1985-07-19 | 1990-03-17 | 후지쓰가부시끼가이샤 | 화합물 반도체의 에피택셜층 성장용의 화학적 유기 금속 기상 성장장치 |
JPS63262470A (ja) * | 1987-04-21 | 1988-10-28 | Hitachi Electronics Eng Co Ltd | 気相反応装置 |
US5303671A (en) * | 1992-02-07 | 1994-04-19 | Tokyo Electron Limited | System for continuously washing and film-forming a semiconductor wafer |
-
1992
- 1992-12-04 JP JP32510992A patent/JP3330166B2/ja not_active Expired - Fee Related
-
1993
- 1993-12-01 US US08/159,587 patent/US5378283A/en not_active Expired - Lifetime
- 1993-12-03 KR KR1019930026340A patent/KR100269411B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100905262B1 (ko) * | 2006-11-06 | 2009-06-29 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 및 반도체 장치의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
KR100269411B1 (ko) | 2001-01-15 |
JP3330166B2 (ja) | 2002-09-30 |
JPH06177066A (ja) | 1994-06-24 |
US5378283A (en) | 1995-01-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR940016447A (ko) | 처리장치 | |
US5861065A (en) | Nitrogen trifluoride-oxygen thermal cleaning process | |
JP2001185539A (ja) | ガス回収システムおよびガス回収方法 | |
TW200731399A (en) | Batch photoresist dry strip and ash system and process | |
US10005025B2 (en) | Corrosion resistant abatement system | |
KR20070066998A (ko) | 수분리 냉각 장치를 구비한 플라즈마 스크러버 시스템 및이를 이용한 유해가스 처리방법 | |
US5714011A (en) | Diluted nitrogen trifluoride thermal cleaning process | |
KR100821414B1 (ko) | 배기 가스 전처리 방법 및 배기 가스 전처리 장치와그것에 사용되는 제진 장치 | |
JPH11168067A (ja) | 半導体製造排ガスの除害装置及び除害方法 | |
KR940020490A (ko) | 공기청정장치 및 방법(apparatus and method for air cleaning) | |
EP1441043A2 (en) | Supply of gas to semiconductor process chamber | |
KR100483577B1 (ko) | 폐가스 처리장치 | |
JP2000068212A (ja) | ガス循環機構を有する半導体製造方法及び装置 | |
KR100545696B1 (ko) | 진공펌프 일체형 폐기가스 처리장치 | |
KR200267601Y1 (ko) | 플라즈마 폐가스 세정장치 | |
KR20090096087A (ko) | 폐가스 처리장치 | |
JPH10156126A (ja) | 排気ガス処理装置 | |
TW201900266A (zh) | 廢氣的減壓除害方法及其裝置 | |
JP2968301B2 (ja) | ドライエッチング装置 | |
JPH0635650B2 (ja) | 超高純度ガス供給装置 | |
ATE329678T1 (de) | Anordnung und verfahren zur reinigung von abgasen | |
US6962677B2 (en) | Method and apparatus for combustion harmfulness-elimination of PFC gas | |
JPH04107280A (ja) | 表面加工装置 | |
KR200283870Y1 (ko) | 반도체 저압 화학 기상 증착 장치 | |
JP2001189277A (ja) | 配管の洗浄方法及び装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20120629 Year of fee payment: 13 |
|
EXPY | Expiration of term |