KR890013217A - 다이아몬드 박막부착 초경합금의 제조방법 - Google Patents

다이아몬드 박막부착 초경합금의 제조방법 Download PDF

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Publication number
KR890013217A
KR890013217A KR1019890001197A KR890001197A KR890013217A KR 890013217 A KR890013217 A KR 890013217A KR 1019890001197 A KR1019890001197 A KR 1019890001197A KR 890001197 A KR890001197 A KR 890001197A KR 890013217 A KR890013217 A KR 890013217A
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South Korea
Prior art keywords
cemented carbide
thin film
diamond thin
surface layer
diamond
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KR1019890001197A
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English (en)
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KR920000801B1 (ko
Inventor
도시미찌 이또
사또시 가쯔마다
마사가즈 와다나베
사또시 이이오
Original Assignee
홍고오 므쯔미
이데미쯔세끼유가가꾸 가부시기가이샤
스즈끼 테이이찌
니혼도뀨슈도오교오 가부시기가이샤
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Priority claimed from JP63024832A external-priority patent/JP2584467B2/ja
Priority claimed from JP63104970A external-priority patent/JP2543132B2/ja
Application filed by 홍고오 므쯔미, 이데미쯔세끼유가가꾸 가부시기가이샤, 스즈끼 테이이찌, 니혼도뀨슈도오교오 가부시기가이샤 filed Critical 홍고오 므쯔미
Publication of KR890013217A publication Critical patent/KR890013217A/ko
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Publication of KR920000801B1 publication Critical patent/KR920000801B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Combustion & Propulsion (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Cutting Tools, Boring Holders, And Turrets (AREA)

Abstract

내용 없음.

Description

다이아몬드 박막부착 초경합금의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명에 사용되는 반응장치의 개념도.

Claims (7)

  1. 2∼60몰％의 일산화탄소 및 수소를 함유하는 원료 가스를 활성화하여 얻어지는 가스를 초경합금상에 접촉시켜서 다이아몬드박막을 형성하는 것을 특징으로하는 다이아몬드박막 부착 초경합금의 제조방법.
  2. 제 1 항에 있어서, 상기 초경합금은, 그 표면에 IVa, Va 또는 Vla족에 속하는 금속 및 Si로 이루어진 군으로부터 선택되는 적어도 1종의 원소로 형성되는 표면층을 가진 다이아몬드박막부착 초경합금의 제조방법.
  3. 제 2 항에 있어서, 상기 초경합금에 있어서의 금속종류와, 상기 표면층에 있어서의 금속종류가 동일종인 다이아몬드박막부착 초경합금.
  4. 제 1 항에 있어서, 상기 초경합금에 있어서의 금속종류의 주성분이 텅스텐인 다이아몬드박막부착 초경합금.
  5. 제 2 항에 있어서, 상기 표면층의 두께가 0.05∼1㎛인 다이아몬드박막부착 초경합금.
  6. 제 2 항에 있어서, 상기 표면층이 금속증착법에 의하여 형성된 다이아몬드 박막부착 초경합금.
  7. 제 1 항에 있어서, 상기 원료 가스의 활성화가 플라즈마분해법에 의한 다이아몬드박막 부착 초경합금.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890001197A 1988-02-04 1989-02-02 다이아몬드박막부착 초경합금의 제조방법 KR920000801B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP63024832A JP2584467B2 (ja) 1988-02-04 1988-02-04 ダイヤモンド膜付超硬合金の製造方法
JP63-24832 1988-02-04
JP104970 1988-04-26
JP63-104970 1988-04-26
JP63104970A JP2543132B2 (ja) 1988-04-26 1988-04-26 ダイヤモンド薄膜付き超硬合金およびその製造方法

Publications (2)

Publication Number Publication Date
KR890013217A true KR890013217A (ko) 1989-09-22
KR920000801B1 KR920000801B1 (ko) 1992-01-23

Family

ID=26362401

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890001197A KR920000801B1 (ko) 1988-02-04 1989-02-02 다이아몬드박막부착 초경합금의 제조방법

Country Status (5)

Country Link
US (1) US5028451A (ko)
EP (1) EP0327110B1 (ko)
KR (1) KR920000801B1 (ko)
CA (1) CA1336704C (ko)
DE (1) DE68904314T2 (ko)

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Also Published As

Publication number Publication date
EP0327110B1 (en) 1993-01-13
CA1336704C (en) 1995-08-15
KR920000801B1 (ko) 1992-01-23
DE68904314T2 (de) 1993-08-05
DE68904314D1 (de) 1993-02-25
US5028451A (en) 1991-07-02
EP0327110A1 (en) 1989-08-09

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