KR890013217A - 다이아몬드 박막부착 초경합금의 제조방법 - Google Patents
다이아몬드 박막부착 초경합금의 제조방법 Download PDFInfo
- Publication number
- KR890013217A KR890013217A KR1019890001197A KR890001197A KR890013217A KR 890013217 A KR890013217 A KR 890013217A KR 1019890001197 A KR1019890001197 A KR 1019890001197A KR 890001197 A KR890001197 A KR 890001197A KR 890013217 A KR890013217 A KR 890013217A
- Authority
- KR
- South Korea
- Prior art keywords
- cemented carbide
- thin film
- diamond thin
- surface layer
- diamond
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
- C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Plasma & Fusion (AREA)
- Combustion & Propulsion (AREA)
- Physics & Mathematics (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Cutting Tools, Boring Holders, And Turrets (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명에 사용되는 반응장치의 개념도.
Claims (7)
- 2∼60몰%의 일산화탄소 및 수소를 함유하는 원료 가스를 활성화하여 얻어지는 가스를 초경합금상에 접촉시켜서 다이아몬드박막을 형성하는 것을 특징으로하는 다이아몬드박막 부착 초경합금의 제조방법.
- 제 1 항에 있어서, 상기 초경합금은, 그 표면에 IVa, Va 또는 Vla족에 속하는 금속 및 Si로 이루어진 군으로부터 선택되는 적어도 1종의 원소로 형성되는 표면층을 가진 다이아몬드박막부착 초경합금의 제조방법.
- 제 2 항에 있어서, 상기 초경합금에 있어서의 금속종류와, 상기 표면층에 있어서의 금속종류가 동일종인 다이아몬드박막부착 초경합금.
- 제 1 항에 있어서, 상기 초경합금에 있어서의 금속종류의 주성분이 텅스텐인 다이아몬드박막부착 초경합금.
- 제 2 항에 있어서, 상기 표면층의 두께가 0.05∼1㎛인 다이아몬드박막부착 초경합금.
- 제 2 항에 있어서, 상기 표면층이 금속증착법에 의하여 형성된 다이아몬드 박막부착 초경합금.
- 제 1 항에 있어서, 상기 원료 가스의 활성화가 플라즈마분해법에 의한 다이아몬드박막 부착 초경합금.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63024832A JP2584467B2 (ja) | 1988-02-04 | 1988-02-04 | ダイヤモンド膜付超硬合金の製造方法 |
JP63-24832 | 1988-02-04 | ||
JP104970 | 1988-04-26 | ||
JP63-104970 | 1988-04-26 | ||
JP63104970A JP2543132B2 (ja) | 1988-04-26 | 1988-04-26 | ダイヤモンド薄膜付き超硬合金およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR890013217A true KR890013217A (ko) | 1989-09-22 |
KR920000801B1 KR920000801B1 (ko) | 1992-01-23 |
Family
ID=26362401
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890001197A KR920000801B1 (ko) | 1988-02-04 | 1989-02-02 | 다이아몬드박막부착 초경합금의 제조방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5028451A (ko) |
EP (1) | EP0327110B1 (ko) |
KR (1) | KR920000801B1 (ko) |
CA (1) | CA1336704C (ko) |
DE (1) | DE68904314T2 (ko) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4990403A (en) * | 1989-01-20 | 1991-02-05 | Idemitsu Petrochemical Company Limited | Diamond coated sintered body |
US5204167A (en) * | 1989-02-23 | 1993-04-20 | Toshiba Tungaloy Co., Ltd. | Diamond-coated sintered body excellent in adhesion and process for preparing the same |
JP2620976B2 (ja) * | 1989-07-07 | 1997-06-18 | 株式会社豊田中央研究所 | 摺動部材 |
JP2848498B2 (ja) * | 1989-11-25 | 1999-01-20 | 日本特殊陶業株式会社 | ダイヤモンドの合成方法、ダイヤモンド被覆切削工具の製造方法、及びダイヤモンド被覆切削工具の製造方法 |
DE69029729T2 (de) * | 1990-08-03 | 1997-05-07 | Fujitsu Ltd | Verfahren zur Abscheidung aus der Gasphase eines Diamantfilmes |
US5492770A (en) * | 1990-08-03 | 1996-02-20 | Fujitsu Limited | Method and apparatus for vapor deposition of diamond film |
US5260106A (en) * | 1990-08-03 | 1993-11-09 | Fujitsu Limited | Method for forming diamond films by plasma jet CVD |
SE9003251D0 (sv) * | 1990-10-11 | 1990-10-11 | Diamant Boart Stratabit Sa | Improved tools for rock drilling, metal cutting and wear part applications |
CA2082711A1 (en) * | 1991-12-13 | 1993-06-14 | Philip G. Kosky | Cvd diamond growth on hydride-forming metal substrates |
JP2924989B2 (ja) * | 1992-01-28 | 1999-07-26 | 日本特殊陶業株式会社 | ダイヤモンド膜被覆窒化珪素基部材及びその製造方法 |
JP3057932B2 (ja) * | 1992-10-01 | 2000-07-04 | 三菱マテリアル株式会社 | セラミックス焼結体の接合方法 |
US5585176A (en) * | 1993-11-30 | 1996-12-17 | Kennametal Inc. | Diamond coated tools and wear parts |
US6087025A (en) * | 1994-03-29 | 2000-07-11 | Southwest Research Institute | Application of diamond-like carbon coatings to cutting surfaces of metal cutting tools |
US5731045A (en) * | 1996-01-26 | 1998-03-24 | Southwest Research Institute | Application of diamond-like carbon coatings to cobalt-cemented tungsten carbide components |
US5725573A (en) * | 1994-03-29 | 1998-03-10 | Southwest Research Institute | Medical implants made of metal alloys bearing cohesive diamond like carbon coatings |
US5593719A (en) * | 1994-03-29 | 1997-01-14 | Southwest Research Institute | Treatments to reduce frictional wear between components made of ultra-high molecular weight polyethylene and metal alloys |
US5605714A (en) * | 1994-03-29 | 1997-02-25 | Southwest Research Institute | Treatments to reduce thrombogeneticity in heart valves made from titanium and its alloys |
JPH07315989A (ja) * | 1994-04-01 | 1995-12-05 | Ngk Spark Plug Co Ltd | ダイヤモンド被覆部材の製造方法 |
US5984905A (en) * | 1994-07-11 | 1999-11-16 | Southwest Research Institute | Non-irritating antimicrobial coating for medical implants and a process for preparing same |
DE4442370A1 (de) * | 1994-11-29 | 1996-05-30 | Widia Gmbh | Verfahren zur Abscheidung metallischer Schichten auf Substratkörpern und Verbundkörper aus einem Substratkörper und mindestens einer Oberflächenschicht |
US5897924A (en) * | 1995-06-26 | 1999-04-27 | Board Of Trustees Operating Michigan State University | Process for depositing adherent diamond thin films |
US5759623A (en) * | 1995-09-14 | 1998-06-02 | Universite De Montreal | Method for producing a high adhesion thin film of diamond on a Fe-based substrate |
US5780119A (en) * | 1996-03-20 | 1998-07-14 | Southwest Research Institute | Treatments to reduce friction and wear on metal alloy components |
US5716170A (en) * | 1996-05-15 | 1998-02-10 | Kennametal Inc. | Diamond coated cutting member and method of making the same |
EP0828015A3 (en) * | 1996-09-06 | 1998-07-15 | SANYO ELECTRIC Co., Ltd. | Hard carbon film-coated substrate and method for fabricating the same |
JP4560964B2 (ja) * | 2000-02-25 | 2010-10-13 | 住友電気工業株式会社 | 非晶質炭素被覆部材 |
JPWO2005121398A1 (ja) * | 2004-06-10 | 2008-04-10 | 国立大学法人 電気通信大学 | ダイヤモンド薄膜のコーティング法及びダイヤモンド被覆超硬合金部材 |
US8747963B2 (en) * | 2009-01-23 | 2014-06-10 | Lockheed Martin Corporation | Apparatus and method for diamond film growth |
JP2013532227A (ja) | 2010-04-30 | 2013-08-15 | セメコン アーゲー | 被覆された物体及び物体の被覆方法 |
CN103366975B (zh) | 2012-03-30 | 2017-12-29 | 施耐德电器工业公司 | 银基电接触材料 |
Family Cites Families (20)
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US4702960A (en) * | 1980-07-30 | 1987-10-27 | Avco Corporation | Surface treatment for carbon and product |
US4504519A (en) * | 1981-10-21 | 1985-03-12 | Rca Corporation | Diamond-like film and process for producing same |
JPS58126972A (ja) * | 1982-01-22 | 1983-07-28 | Sumitomo Electric Ind Ltd | ダイヤモンド被覆超硬合金工具 |
US4803127A (en) * | 1983-02-25 | 1989-02-07 | Liburdi Engineering Limited | Vapor deposition of metal compound coating utilizing metal sub-halides and coated metal article |
JPS59159981A (ja) * | 1983-03-02 | 1984-09-10 | Mitsubishi Metal Corp | 切削工具および耐摩耗工具用表面被覆耐摩耗性部材 |
JPS60204695A (ja) * | 1984-03-28 | 1985-10-16 | Mitsubishi Metal Corp | 人工ダイヤモンド皮膜の析出形成方法 |
JPS60208473A (ja) * | 1984-03-30 | 1985-10-21 | Mitsubishi Metal Corp | 人工ダイヤモンド被覆工具部材 |
US4668538A (en) * | 1984-07-10 | 1987-05-26 | Westinghouse Electric Corp. | Processes for depositing metal compound coatings |
JPS6152363A (ja) * | 1984-08-21 | 1986-03-15 | Mitsubishi Metal Corp | サ−メツト部材の表面に人工ダイヤモンド皮膜を析出形成する方法 |
US4716048A (en) * | 1985-02-12 | 1987-12-29 | Canon Kabushiki Kaisha | Process for forming deposited film |
JPS627267A (ja) * | 1985-07-03 | 1987-01-14 | Konishiroku Photo Ind Co Ltd | 網点形成方法 |
JPH084071B2 (ja) * | 1985-12-28 | 1996-01-17 | キヤノン株式会社 | 堆積膜形成法 |
JPH0631185B2 (ja) * | 1986-02-06 | 1994-04-27 | 東芝セラミツクス株式会社 | 炭化珪素発熱体の製造方法 |
US4731296A (en) * | 1986-07-03 | 1988-03-15 | Mitsubishi Kinzoku Kabushiki Kaisha | Diamond-coated tungsten carbide-base sintered hard alloy material for insert of a cutting tool |
JPS6315347A (ja) * | 1986-07-04 | 1988-01-22 | Nec Corp | 情報保存方式 |
US4756964A (en) * | 1986-09-29 | 1988-07-12 | The Dow Chemical Company | Barrier films having an amorphous carbon coating and methods of making |
US4844951A (en) * | 1987-01-20 | 1989-07-04 | Gte Laboratories Incorporated | Method for depositing ultrathin laminated oxide coatings |
US4985227A (en) * | 1987-04-22 | 1991-01-15 | Indemitsu Petrochemical Co., Ltd. | Method for synthesis or diamond |
US4761308A (en) * | 1987-06-22 | 1988-08-02 | General Electric Company | Process for the preparation of reflective pyrolytic graphite |
JPS6461396A (en) * | 1987-09-01 | 1989-03-08 | Idemitsu Petrochemical Co | Synthesis of diamond and installation therefor |
-
1989
- 1989-02-02 KR KR1019890001197A patent/KR920000801B1/ko not_active IP Right Cessation
- 1989-02-03 DE DE8989101927T patent/DE68904314T2/de not_active Expired - Fee Related
- 1989-02-03 EP EP89101927A patent/EP0327110B1/en not_active Expired - Lifetime
- 1989-02-03 CA CA000590089A patent/CA1336704C/en not_active Expired - Fee Related
-
1990
- 1990-03-02 US US07/488,420 patent/US5028451A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0327110B1 (en) | 1993-01-13 |
CA1336704C (en) | 1995-08-15 |
KR920000801B1 (ko) | 1992-01-23 |
DE68904314T2 (de) | 1993-08-05 |
DE68904314D1 (de) | 1993-02-25 |
US5028451A (en) | 1991-07-02 |
EP0327110A1 (en) | 1989-08-09 |
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