KR890005916A - 박막 형성 장치 - Google Patents
박막 형성 장치 Download PDFInfo
- Publication number
- KR890005916A KR890005916A KR1019880012594A KR880012594A KR890005916A KR 890005916 A KR890005916 A KR 890005916A KR 1019880012594 A KR1019880012594 A KR 1019880012594A KR 880012594 A KR880012594 A KR 880012594A KR 890005916 A KR890005916 A KR 890005916A
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- forming apparatus
- film forming
- electrode
- dielectric
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/488—Protection of windows for introduction of radiation into the coating chamber
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명 장치를 표시한 종 단면도.
도면 제4도는 본 발명장치의 별도실시예를 표시한 종 단면도.
도면 제5도는 본 발명장치의 별도실시예의 주요부를 표시한 종단면도.
Claims (13)
- 유리창을 가지고 있는 챔버안에 시료를 배치하고, 전자파도 입선상에 설치된 유전체를 통하여 전자파를 상기한 챔버안에 도입하고, 이 전자파에 의하여 상기한 챔버안의 재료 가스를 활성화하며, 상기한 시료에 박막을 형성하는 장치에 있어서, 상기한 유전체의 근처에 설치된 전극과, 이 전극에 접속된 고주파 발생원을 구비하는 것을 특징으로 하는 박막형성장치.
- 제 1 항에 있어서, 상기한 전극은 상기한 유전체의 시료와 반대쪽면에 설치되어 있는 것을 특징으로 하는 박막형성장치.
- 제 1 항에 있어서, 상기한 전극은 상기한 유전체의 시료와 반대쪽면위에 근접해서 설치되어 있는 것을 특징으로 하는 박막형성장치.
- 제 1 항에 있어서, 상기한 전극은 상기한 유전체속으로 매설되어 있는 것을 특징으로 하는 박막형성장치.
- 제 1 항에 있어서, 상기한 전극은 상기한 유전체에 고정되어 있는 것을 특징으로 하는 박막형성장치.
- 제 1 항에 있어서, 상기한 전극은 유전체에 대하여 자유롭게 붙였다 땔수 있도록 하고 있는 것을 특징으로 하는 박막형성장치.
- 제 1 항에 있어서, 상기한 시료를 얹어두는 시료대를 구비한 것을 특징으로 하는 박막 형성장치.
- 제 1 항에 있어서, 상기한 재료를 챔버안에 도입하기 위한 가스관이 있는 것을 특징으로 하는 박막형성장치.
- 제 1 항에 있어서, 상기한 전자파가 광선인것을 특징으로 하는 박막형성장치.
- 제 1 항에 있어서, 상기한 전극에는 적어도 광선을 통과시키기 위한 구멍이 설치되어 있는 것을 특징으로 하는 박막형성장치.
- 제 9 항에 있어서, 상기한 전극은 광선을 통과시키기 위해서 그물(mech)형상을 이루고 있는 것을 특징으로 하는 박막형성장치.
- 제 1 항에 있어서, 상기한 전자파는 마이크로파인 것을 특징으로 하는 박막형성장치.
- 제 12 항에 있어서, 상기한 전극에는 적어도 마이크로파를 통과시키기 위한 구멍이 설치되어 있는 것을 특징으로 하는 박막형성장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24891187 | 1987-09-30 | ||
JP?62-248911 | 1987-09-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR890005916A true KR890005916A (ko) | 1989-05-17 |
KR920005624B1 KR920005624B1 (en) | 1992-07-10 |
Family
ID=17185256
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR8812594A KR920005624B1 (en) | 1987-09-30 | 1988-09-29 | Thin film forming apparatus |
Country Status (4)
Country | Link |
---|---|
US (1) | US4960071A (ko) |
EP (1) | EP0310347B1 (ko) |
KR (1) | KR920005624B1 (ko) |
DE (1) | DE3876205T2 (ko) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3919538A1 (de) * | 1989-06-15 | 1990-12-20 | Asea Brown Boveri | Beschichtungsvorrichtung |
US5330606A (en) * | 1990-12-14 | 1994-07-19 | Matsushita Electric Industrial Co., Ltd. | Plasma source for etching |
US5087297A (en) * | 1991-01-17 | 1992-02-11 | Johnson Matthey Inc. | Aluminum target for magnetron sputtering and method of making same |
US5101764A (en) * | 1991-02-20 | 1992-04-07 | Texas Instruments Incorporated | Method and apparatus for integrating optical sensor into processor |
DE4217900A1 (de) * | 1992-05-29 | 1993-12-02 | Leybold Ag | Anordnung einer mikrowellendurchlässigen Scheibe in einem Hohlleiter und Verfahren zur Einbringung dieser Scheibe |
US5292370A (en) * | 1992-08-14 | 1994-03-08 | Martin Marietta Energy Systems, Inc. | Coupled microwave ECR and radio-frequency plasma source for plasma processing |
JP3227522B2 (ja) * | 1992-10-20 | 2001-11-12 | 株式会社日立製作所 | マイクロ波プラズマ処理方法及び装置 |
JP3252507B2 (ja) * | 1993-01-29 | 2002-02-04 | ソニー株式会社 | プラズマ処理装置 |
US5571576A (en) * | 1995-02-10 | 1996-11-05 | Watkins-Johnson | Method of forming a fluorinated silicon oxide layer using plasma chemical vapor deposition |
US5814154A (en) * | 1997-01-23 | 1998-09-29 | Gasonics International | Short-coupled-path extender for plasma source |
US6026762A (en) * | 1997-04-23 | 2000-02-22 | Applied Materials, Inc. | Apparatus for improved remote microwave plasma source for use with substrate processing systems |
US6274058B1 (en) | 1997-07-11 | 2001-08-14 | Applied Materials, Inc. | Remote plasma cleaning method for processing chambers |
JP3317209B2 (ja) * | 1997-08-12 | 2002-08-26 | 東京エレクトロンエイ・ティー株式会社 | プラズマ処理装置及びプラズマ処理方法 |
TW516113B (en) * | 1999-04-14 | 2003-01-01 | Hitachi Ltd | Plasma processing device and plasma processing method |
KR100976264B1 (ko) * | 2008-03-31 | 2010-08-18 | 주식회사 잉크테크 | 금속 박막 형성 장치 및 이를 이용한 금속 박막 형성 방법 |
US8222125B2 (en) * | 2010-08-12 | 2012-07-17 | Ovshinsky Innovation, Llc | Plasma deposition of amorphous semiconductors at microwave frequencies |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3893234A (en) * | 1972-07-03 | 1975-07-08 | Sierracin Corp | Edge improvement for window with electrically conductive layer |
FR2456787A1 (fr) * | 1979-05-18 | 1980-12-12 | Thomson Csf | Dispositif hyperfrequence pour le depot de films minces sur des solides |
JPS5958819A (ja) * | 1982-09-29 | 1984-04-04 | Hitachi Ltd | 薄膜形成方法 |
US4576698A (en) * | 1983-06-30 | 1986-03-18 | International Business Machines Corporation | Plasma etch cleaning in low pressure chemical vapor deposition systems |
JPS60170037A (ja) * | 1984-02-13 | 1985-09-03 | Toshiba Corp | トラツキング誤差信号生成方法 |
JPS60245217A (ja) * | 1984-05-21 | 1985-12-05 | Semiconductor Energy Lab Co Ltd | 薄膜形成装置 |
JPS61196528A (ja) * | 1985-02-25 | 1986-08-30 | Semiconductor Energy Lab Co Ltd | 薄膜形成方法 |
JPS62183512A (ja) * | 1986-02-07 | 1987-08-11 | Mitsubishi Electric Corp | レ−ザ誘起薄膜堆積装置 |
JPH0676664B2 (ja) * | 1986-12-09 | 1994-09-28 | キヤノン株式会社 | マイクロ波プラズマcvd法による機能性堆積膜の形成装置 |
-
1988
- 1988-09-28 DE DE8888308966T patent/DE3876205T2/de not_active Expired - Fee Related
- 1988-09-28 EP EP88308966A patent/EP0310347B1/en not_active Expired - Lifetime
- 1988-09-29 KR KR8812594A patent/KR920005624B1/ko not_active IP Right Cessation
- 1988-09-29 US US07/250,745 patent/US4960071A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE3876205T2 (de) | 1993-05-27 |
EP0310347A1 (en) | 1989-04-05 |
KR920005624B1 (en) | 1992-07-10 |
EP0310347B1 (en) | 1992-11-25 |
US4960071A (en) | 1990-10-02 |
DE3876205D1 (de) | 1993-01-07 |
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