KR20170134785A - 노광 장치, 노광 방법 및 디바이스 제조 방법 - Google Patents

노광 장치, 노광 방법 및 디바이스 제조 방법 Download PDF

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Publication number
KR20170134785A
KR20170134785A KR1020177034377A KR20177034377A KR20170134785A KR 20170134785 A KR20170134785 A KR 20170134785A KR 1020177034377 A KR1020177034377 A KR 1020177034377A KR 20177034377 A KR20177034377 A KR 20177034377A KR 20170134785 A KR20170134785 A KR 20170134785A
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KR
South Korea
Prior art keywords
wafer
stage
measurement
exposure
measuring
Prior art date
Application number
KR1020177034377A
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English (en)
Korean (ko)
Inventor
고 이치노세
Original Assignee
가부시키가이샤 니콘
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Application filed by 가부시키가이샤 니콘 filed Critical 가부시키가이샤 니콘
Publication of KR20170134785A publication Critical patent/KR20170134785A/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70766—Reaction force control means, e.g. countermass
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70975—Assembly, maintenance, transport or storage of apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020177034377A 2009-06-19 2010-06-21 노광 장치, 노광 방법 및 디바이스 제조 방법 KR20170134785A (ko)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US21846009P 2009-06-19 2009-06-19
JPJP-P-2009-145967 2009-06-19
JPJP-P-2009-145959 2009-06-19
US61/218,460 2009-06-19
JP2009145959 2009-06-19
JP2009145967 2009-06-19
US12/818,386 2010-06-18
US12/818,386 US8446569B2 (en) 2009-06-19 2010-06-18 Exposure apparatus, exposure method and device manufacturing method
PCT/JP2010/060923 WO2010147243A2 (en) 2009-06-19 2010-06-21 Exposure apparatus, exposure method and device manufacturing method

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020127001445A Division KR101805209B1 (ko) 2009-06-19 2010-06-21 노광 장치, 노광 방법 및 디바이스 제조 방법

Publications (1)

Publication Number Publication Date
KR20170134785A true KR20170134785A (ko) 2017-12-06

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Family Applications (2)

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KR1020127001445A KR101805209B1 (ko) 2009-06-19 2010-06-21 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020177034377A KR20170134785A (ko) 2009-06-19 2010-06-21 노광 장치, 노광 방법 및 디바이스 제조 방법

Family Applications Before (1)

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Country Status (7)

Country Link
US (1) US8446569B2 (zh)
JP (1) JP5348628B2 (zh)
KR (2) KR101805209B1 (zh)
CN (1) CN102460307B (zh)
HK (1) HK1169492A1 (zh)
TW (1) TWI536111B (zh)
WO (1) WO2010147243A2 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5464186B2 (ja) * 2011-09-07 2014-04-09 信越化学工業株式会社 フォトマスクブランク、フォトマスク及びその製造方法
KR102311833B1 (ko) * 2012-10-02 2021-10-12 가부시키가이샤 니콘 노광 장치 및 노광 방법, 그리고 디바이스 제조 방법
KR102080875B1 (ko) 2013-01-23 2020-04-16 삼성디스플레이 주식회사 스테이지 이송 장치 및 이를 이용한 스테이지 위치 측정 방법
JP5582267B1 (ja) * 2014-01-17 2014-09-03 株式会社東光高岳 連続走査型計測装置
CN108919606A (zh) * 2014-08-15 2018-11-30 Asml荷兰有限公司 台***和光刻设备
JP6752450B2 (ja) * 2016-09-30 2020-09-09 株式会社ニコン 移動体装置、移動方法、露光装置、露光方法、フラットパネルディスプレイの製造方法、並びにデバイス製造方法
CN109269544B (zh) * 2018-09-27 2021-01-29 中国人民解放军国防科技大学 中低速磁浮车辆悬浮传感器巡检***
CN112902832B (zh) * 2021-01-19 2023-08-25 上海集成电路装备材料产业创新中心有限公司 柱形光栅干涉仪及读数头总成装置
CN112835269B (zh) * 2021-01-19 2024-04-12 上海集成电路装备材料产业创新中心有限公司 一种光刻装置及曝光方法
CN114683223B (zh) * 2022-03-29 2023-01-06 苏州矽行半导体技术有限公司 一种晶圆载台
CN114683227B (zh) * 2022-03-29 2023-01-06 苏州矽行半导体技术有限公司 一种晶圆载台

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57117238A (en) 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
US4780617A (en) 1984-08-09 1988-10-25 Nippon Kogaku K.K. Method for successive alignment of chip patterns on a substrate
JP3412704B2 (ja) 1993-02-26 2003-06-03 株式会社ニコン 投影露光方法及び装置、並びに露光装置
EP1450208A1 (en) 1997-03-10 2004-08-25 ASML Netherlands B.V. Lithographic apparatus having two object holders
KR100841147B1 (ko) 1998-03-11 2008-06-24 가부시키가이샤 니콘 레이저 장치, 자외광 조사 장치 및 방법, 물체의 패턴 검출장치 및 방법
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
JP2001102429A (ja) * 1999-07-29 2001-04-13 Nikon Corp ステージ装置およびそれを備えた検査装置
WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
KR20010085493A (ko) 2000-02-25 2001-09-07 시마무라 기로 노광장치, 그 조정방법, 및 상기 노광장치를 이용한디바이스 제조방법
US6437463B1 (en) 2000-04-24 2002-08-20 Nikon Corporation Wafer positioner with planar motor and mag-lev fine stage
US20020041377A1 (en) 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
WO2002069049A2 (en) 2001-02-27 2002-09-06 Asml Us, Inc. Simultaneous imaging of two reticles
US20030085676A1 (en) 2001-06-28 2003-05-08 Michael Binnard Six degree of freedom control of planar motors
TW529172B (en) 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
US6927505B2 (en) * 2001-12-19 2005-08-09 Nikon Corporation Following stage planar motor
KR100927560B1 (ko) 2002-01-29 2009-11-23 가부시키가이샤 니콘 이미지 형성 상태 조정 시스템, 노광 방법 및 노광 장치, 그리고 프로그램 및 정보 기록 매체
JP4234964B2 (ja) * 2002-09-10 2009-03-04 株式会社オーク製作所 露光装置
DE60335595D1 (de) 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
KR20110086130A (ko) 2002-12-10 2011-07-27 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
TWI338912B (en) 2003-05-12 2011-03-11 Nikon Corp Stage device and exposing device
ATE429031T1 (de) * 2003-08-07 2009-05-15 Nikon Corp Belichtungsverfahren
EP1737024A4 (en) 2004-03-25 2008-10-15 Nikon Corp EXPOSURE DEVICES, EXPOSURE METHOD AND COMPONENT MANUFACTURING METHOD
WO2005098911A1 (ja) 2004-04-09 2005-10-20 Nikon Corporation 移動体の駆動方法、ステージ装置及び露光装置
JP2005327993A (ja) 2004-05-17 2005-11-24 Canon Inc 位置決め装置、露光装置及びデバイス製造方法
CN1719339A (zh) * 2004-07-09 2006-01-11 富士胶片株式会社 曝光装置以及曝光方法
CN101052916B (zh) 2004-09-30 2010-05-12 株式会社尼康 投影光学设备和曝光装置
WO2007040254A1 (ja) 2005-10-05 2007-04-12 Nikon Corporation 露光装置及び露光方法
TWI393171B (zh) 2006-01-19 2013-04-11 尼康股份有限公司 A moving body driving method and a moving body driving system, a pattern forming method and a pattern forming apparatus, an exposure method and an exposure apparatus, and an element manufacturing method
CN101986209B (zh) 2006-02-21 2012-06-20 株式会社尼康 曝光装置、曝光方法及组件制造方法
KR101391025B1 (ko) 2006-09-29 2014-04-30 가부시키가이샤 니콘 이동체 시스템, 패턴 형성 장치, 노광 장치 및 노광 방법, 그리고 디바이스 제조 방법
JP5120377B2 (ja) 2006-09-29 2013-01-16 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
KR101549709B1 (ko) 2006-11-09 2015-09-11 가부시키가이샤 니콘 유지 장치, 위치 검출 장치 및 노광 장치, 이동 방법, 위치검출 방법, 노광 방법, 검출계의 조정 방법, 그리고 디바이스 제조 방법
US7903866B2 (en) * 2007-03-29 2011-03-08 Asml Netherlands B.V. Measurement system, lithographic apparatus and method for measuring a position dependent signal of a movable object
TW200926327A (en) 2007-10-19 2009-06-16 Koninkl Philips Electronics Nv Displacement device with precision measurement
US8773635B2 (en) * 2008-12-19 2014-07-08 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
WO2011052703A1 (en) * 2009-10-30 2011-05-05 Nikon Corporation Exposure apparatus and device manufacturing method

Also Published As

Publication number Publication date
WO2010147243A2 (en) 2010-12-23
US8446569B2 (en) 2013-05-21
WO2010147243A3 (en) 2011-12-22
CN102460307B (zh) 2015-08-12
KR20120037943A (ko) 2012-04-20
US20110008717A1 (en) 2011-01-13
KR101805209B1 (ko) 2017-12-05
CN102460307A (zh) 2012-05-16
TWI536111B (zh) 2016-06-01
JP2012531029A (ja) 2012-12-06
HK1169492A1 (zh) 2013-01-25
JP5348628B2 (ja) 2013-11-20
TW201109857A (en) 2011-03-16

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