KR20070099579A - 진공 처리 장치 - Google Patents
진공 처리 장치 Download PDFInfo
- Publication number
- KR20070099579A KR20070099579A KR1020077015049A KR20077015049A KR20070099579A KR 20070099579 A KR20070099579 A KR 20070099579A KR 1020077015049 A KR1020077015049 A KR 1020077015049A KR 20077015049 A KR20077015049 A KR 20077015049A KR 20070099579 A KR20070099579 A KR 20070099579A
- Authority
- KR
- South Korea
- Prior art keywords
- chamber
- substrate
- vacuum processing
- vacuum
- film
- Prior art date
Links
- 238000009489 vacuum treatment Methods 0.000 title abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 31
- 239000000969 carrier Substances 0.000 claims abstract description 7
- 238000004320 controlled atmosphere Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 170
- 238000012545 processing Methods 0.000 claims description 128
- 238000010438 heat treatment Methods 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 50
- 238000001816 cooling Methods 0.000 claims description 29
- 238000012546 transfer Methods 0.000 claims description 9
- 238000011144 upstream manufacturing Methods 0.000 claims description 9
- 238000007599 discharging Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 description 29
- 230000015572 biosynthetic process Effects 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 11
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 10
- 238000009826 distribution Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 229910002092 carbon dioxide Inorganic materials 0.000 description 5
- 239000001569 carbon dioxide Substances 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000000872 buffer Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000007781 pre-processing Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04D—NON-POSITIVE-DISPLACEMENT PUMPS
- F04D17/00—Radial-flow pumps, e.g. centrifugal pumps; Helico-centrifugal pumps
- F04D17/08—Centrifugal pumps
- F04D17/16—Centrifugal pumps for displacing without appreciable compression
- F04D17/168—Pumps specially adapted to produce a vacuum
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Engineering & Computer Science (AREA)
- Physical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Description
Claims (9)
- 기재가 탑재되는 복수의 캐리어와,제어된 분위기로 유지되고, 상기 캐리어가 순환 이동하는 순환 경로와,상기 순환 경로에 마련되고, 상기 캐리어에 대해 상기 기재를 투입 및 배출하기 위한 복수의 기재 출입실과,상기 순환 경로에서의 상기 각 기재 출입실 사이에 각각 마련되고, 상기 기재를 진공 처리하기 위한 진공 처리실을 구비한 것을 특징으로 하는 진공 처리 장치.
- 제1항에 있어서,상기 순환 경로에서의 상기 진공 처리실의 상류쪽에는 상기 기재를 가열처리하기 위한 가열실이 마련되어 있는 것을 특징으로 하는 진공 처리 장치.
- 제1항에 있어서,상기 순환 경로에서의 상기 진공 처리실의 하류쪽에는 상기 기재를 냉각처리하기 위한 냉각실이 마련되어 있는 것을 특징으로 하는 진공 처리 장치.
- 제1항에 있어서,상기 복수의 진공 처리실은 제1 진공 처리실과 제2 진공 처리실을 포함하고,상기 제1 진공 처리실과 상기 제2 진공 처리실은 서로 다른 처리를 하기 위해 마련되어 있는 것을 특징으로 하는 진공 처리 장치.
- 제1항에 있어서,상기 복수의 진공 처리실은 제1 진공 처리실과 제2 진공 처리실을 포함하고,상기 순환 경로에서의 상기 제1의 진공 처리실의 하류쪽에 있어 상기 제2 진공 처리실의 상류쪽에는 상기 기재의 반송실이 배치되고,상기 반송실의 상기 제2 진공 처리실쪽의 끝부분에 상기 기재 출입실이 마련되어 있는 것을 특징으로 하는 진공 처리 장치.
- 제5항에 있어서,상기 반송실은,상기 제2 진공 처리실에서의 처리가 행해지기 전의 상기 기재에 냉각 처리를 하기 위한 냉각실로서 기능하는 것을 특징이라고 하는 진공 처리 장치.
- 제5항에 있어서,상기 반송실은 상기 제2 진공 처리실에서 처리되기 전의 상기 기재에 가열처리를 하기 위한 가열실로서 기능하는 것을 특징으로 하는 진공 처리 장치.
- 제1항에 있어서,상기 기재 출입실로서, 상기 기재의 배출실과 상기 기재의 투입실이 분리되어 마련되어 있는 것을 특징으로 하는 진공 처리 장치.
- 제5항에 있어서,상기 기재 출입실로서, 상기 기재의 배출실과 상기 기재의 투입실이 분리되어 마련되어 있는 것을 특징으로 하는 진공 처리 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2005-00221099 | 2005-07-29 | ||
JP2005221099A JP5014603B2 (ja) | 2005-07-29 | 2005-07-29 | 真空処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070099579A true KR20070099579A (ko) | 2007-10-09 |
KR100992937B1 KR100992937B1 (ko) | 2010-11-08 |
Family
ID=37683261
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020077015049A KR100992937B1 (ko) | 2005-07-29 | 2006-07-21 | 진공 처리 장치 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8574366B2 (ko) |
JP (1) | JP5014603B2 (ko) |
KR (1) | KR100992937B1 (ko) |
CN (1) | CN101103136B (ko) |
DE (1) | DE112006001996B4 (ko) |
TW (1) | TWI401328B (ko) |
WO (1) | WO2007013363A1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011049303A2 (ko) * | 2009-10-21 | 2011-04-28 | 바코스 주식회사 | 도장 공정과 연계 가능한 인라인 진공증착 시스템 및 이를 이용한 증착 방법 |
KR20190087651A (ko) * | 2017-06-14 | 2019-07-24 | 가부시키가이샤 알박 | 진공 처리 장치 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005059188B4 (de) * | 2005-12-12 | 2007-10-25 | Heinemack Gmbh | Restaurantsystem |
KR100927621B1 (ko) * | 2007-03-22 | 2009-11-20 | 삼성에스디아이 주식회사 | 보호막층을 증착시키는 장치와, 이를 이용한 증착 방법 |
DE112009001885T5 (de) * | 2008-08-05 | 2011-05-19 | ULVAC, Inc., Chigasaki-shi | Vakuumbearbeitungsvorrichtung und Vakuumbearbeitungsverfahren |
CN102234784A (zh) * | 2010-04-29 | 2011-11-09 | 鸿富锦精密工业(深圳)有限公司 | 镀膜*** |
DE102013102674B4 (de) | 2013-03-15 | 2015-02-05 | Heinemack Gmbh | Restaurantsystem |
US10233515B1 (en) | 2015-08-14 | 2019-03-19 | Southwire Company, Llc | Metal treatment station for use with ultrasonic degassing system |
CN111748786A (zh) * | 2015-12-17 | 2020-10-09 | 株式会社爱发科 | 真空处理装置 |
KR101972730B1 (ko) | 2016-11-02 | 2019-04-25 | 가부시키가이샤 알박 | 진공 처리 장치 |
WO2018084286A1 (ja) * | 2016-11-04 | 2018-05-11 | 株式会社アルバック | 成膜装置 |
JP6608537B2 (ja) * | 2017-05-31 | 2019-11-20 | 株式会社アルバック | 成膜装置及び成膜方法 |
CN108193189A (zh) * | 2017-12-27 | 2018-06-22 | 深圳市华星光电技术有限公司 | 一种真空溅射设备及其真空大气交换装置 |
JP6654741B1 (ja) | 2019-01-08 | 2020-02-26 | 株式会社アルバック | 真空処理装置 |
KR20210112326A (ko) | 2019-01-08 | 2021-09-14 | 가부시키가이샤 아루박 | 진공 처리장치 |
CN111575672B (zh) * | 2020-06-05 | 2022-09-23 | 浙江晶驰光电科技有限公司 | 一种真空溅射镀膜机及其吸灰方法 |
CN112342520A (zh) * | 2020-10-30 | 2021-02-09 | 湘潭宏大真空技术股份有限公司 | 便于工件流转的镀膜机 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3195492B2 (ja) * | 1993-03-15 | 2001-08-06 | 株式会社神戸製鋼所 | アークイオンプレーティング装置及びアークイオンプレーティングシステム |
WO1994021839A1 (en) * | 1993-03-15 | 1994-09-29 | Kabushiki Kaisha Kobeseikosho | Apparatus and system for arc ion plating |
JPH07316814A (ja) | 1994-05-27 | 1995-12-05 | Sumitomo Heavy Ind Ltd | 薄膜処理設備 |
JPH0896358A (ja) * | 1994-09-22 | 1996-04-12 | Mitsubishi Chem Corp | 磁気記録媒体の製造方法 |
JP3909888B2 (ja) | 1996-04-17 | 2007-04-25 | キヤノンアネルバ株式会社 | トレイ搬送式インライン成膜装置 |
JP2000286318A (ja) * | 1999-01-27 | 2000-10-13 | Shinko Electric Co Ltd | 搬送システム |
AU2691800A (en) * | 1999-02-26 | 2000-09-14 | Nikon Corporation | Exposure system, lithography system and conveying method, and device production method and device |
JP4550959B2 (ja) | 1999-11-24 | 2010-09-22 | キヤノンアネルバ株式会社 | 薄膜作成装置 |
TW552306B (en) * | 1999-03-26 | 2003-09-11 | Anelva Corp | Method of removing accumulated films from the surfaces of substrate holders in film deposition apparatus, and film deposition apparatus |
JP2002035572A (ja) | 2000-05-18 | 2002-02-05 | Ulvac Japan Ltd | 真空処理装置と多室型真空処理装置 |
JP5021112B2 (ja) | 2000-08-11 | 2012-09-05 | キヤノンアネルバ株式会社 | 真空処理装置 |
JP4614529B2 (ja) * | 2000-12-07 | 2011-01-19 | キヤノンアネルバ株式会社 | インライン式基板処理装置 |
JP4222589B2 (ja) * | 2001-03-26 | 2009-02-12 | キヤノンアネルバ株式会社 | 基板搬送装置及びそれを用いた基板処理装置 |
JP4850372B2 (ja) * | 2001-09-28 | 2012-01-11 | キヤノンアネルバ株式会社 | 基板処理装置 |
SG114589A1 (en) * | 2001-12-12 | 2005-09-28 | Semiconductor Energy Lab | Film formation apparatus and film formation method and cleaning method |
US8545159B2 (en) * | 2003-10-01 | 2013-10-01 | Jusung Engineering Co., Ltd. | Apparatus having conveyor and method of transferring substrate using the same |
US7210246B2 (en) * | 2003-11-10 | 2007-05-01 | Blueshift Technologies, Inc. | Methods and systems for handling a workpiece in vacuum-based material handling system |
US7918940B2 (en) * | 2005-02-07 | 2011-04-05 | Semes Co., Ltd. | Apparatus for processing substrate |
-
2005
- 2005-07-29 JP JP2005221099A patent/JP5014603B2/ja active Active
-
2006
- 2006-07-21 CN CN2006800021302A patent/CN101103136B/zh active Active
- 2006-07-21 DE DE112006001996.1T patent/DE112006001996B4/de active Active
- 2006-07-21 WO PCT/JP2006/314454 patent/WO2007013363A1/ja active Application Filing
- 2006-07-21 KR KR1020077015049A patent/KR100992937B1/ko active IP Right Grant
- 2006-07-21 US US11/993,783 patent/US8574366B2/en active Active
- 2006-07-25 TW TW095127143A patent/TWI401328B/zh not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011049303A2 (ko) * | 2009-10-21 | 2011-04-28 | 바코스 주식회사 | 도장 공정과 연계 가능한 인라인 진공증착 시스템 및 이를 이용한 증착 방법 |
WO2011049303A3 (ko) * | 2009-10-21 | 2011-10-06 | 바코스 주식회사 | 도장 공정과 연계 가능한 인라인 진공증착 시스템 및 이를 이용한 증착 방법 |
KR20190087651A (ko) * | 2017-06-14 | 2019-07-24 | 가부시키가이샤 알박 | 진공 처리 장치 |
Also Published As
Publication number | Publication date |
---|---|
KR100992937B1 (ko) | 2010-11-08 |
JP2007031821A (ja) | 2007-02-08 |
TWI401328B (zh) | 2013-07-11 |
JP5014603B2 (ja) | 2012-08-29 |
DE112006001996T5 (de) | 2008-06-05 |
CN101103136B (zh) | 2011-11-23 |
WO2007013363A1 (ja) | 2007-02-01 |
CN101103136A (zh) | 2008-01-09 |
US8574366B2 (en) | 2013-11-05 |
US20100143079A1 (en) | 2010-06-10 |
DE112006001996B4 (de) | 2017-03-02 |
TW200710239A (en) | 2007-03-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100992937B1 (ko) | 진공 처리 장치 | |
JP6741594B2 (ja) | キャリアによって支持された基板上に一又は複数の層を堆積させるためのシステム、及び当該システムを使用する方法 | |
JP6704348B2 (ja) | 有機材料用の蒸発源 | |
EP1113087B1 (en) | Film formation apparatus and method for forming a film | |
KR101983213B1 (ko) | 유기 재료를 위한 증발 소스 | |
US20060245852A1 (en) | Load lock apparatus, load lock section, substrate processing system and substrate processing method | |
TWI232242B (en) | Substrate processing apparatus and processing method | |
KR101225312B1 (ko) | 프로세스 장치 | |
US11673170B2 (en) | Method for cleaning a vacuum system used in the manufacture of OLED devices, method for vacuum deposition on a substrate to manufacture OLED devices, and apparatus for vacuum deposition on a substrate to manufacture OLED devices | |
US20170250379A1 (en) | Evaporation source having multiple source ejection directions | |
JP5583580B2 (ja) | 真空処理装置 | |
JP4452029B2 (ja) | 酸化マグネシウム被膜の形成方法及び大気リターン型のインライン式真空蒸着装置 | |
US10790466B2 (en) | In-line system for mass production of organic optoelectronic device and manufacturing method using the same system | |
US20210363627A1 (en) | Vacuum processing system and method of operating a vacuum processing system | |
KR102654241B1 (ko) | 기판 프로세싱 시스템, 진공 프로세싱 시스템을 위한 기판 챔버, 및 기판을 냉각하는 방법 | |
KR20060128496A (ko) | 스퍼터 시스템 | |
JP2017214654A (ja) | 有機材料用の蒸発源、有機材料用の蒸発源を有する装置、有機材料用の蒸発源を含む蒸発堆積装置を有するシステム、及び有機材料用の蒸発源を操作するための方法 | |
JP2019214791A (ja) | 有機材料用の蒸発源 | |
WO2018171908A1 (en) | Apparatus for loading a substrate in a vacuum processing system, system for processing a substrate, and method for loading a substrate | |
JP2010008906A (ja) | 液晶装置の製造装置 | |
KR20070011087A (ko) | 기판에 코팅을 피복하기 위한 진공 클러스터 | |
KR20060062050A (ko) | 스퍼터링 장치 및 그 동작 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20131015 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20141001 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20150923 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20160928 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20170929 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20180921 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20191024 Year of fee payment: 10 |