KR100959009B1 - 박막 형성 장치 및 그 방법 - Google Patents

박막 형성 장치 및 그 방법 Download PDF

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Publication number
KR100959009B1
KR100959009B1 KR20077008800A KR20077008800A KR100959009B1 KR 100959009 B1 KR100959009 B1 KR 100959009B1 KR 20077008800 A KR20077008800 A KR 20077008800A KR 20077008800 A KR20077008800 A KR 20077008800A KR 100959009 B1 KR100959009 B1 KR 100959009B1
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KR
South Korea
Prior art keywords
substrate
board
substrate tray
thin film
film forming
Prior art date
Application number
KR20077008800A
Other languages
English (en)
Korean (ko)
Other versions
KR20070067147A (ko
Inventor
타카유키 후지와라
카즈요시 나가이
Original Assignee
가부시키가이샤 쇼와 신쿠
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 가부시키가이샤 쇼와 신쿠 filed Critical 가부시키가이샤 쇼와 신쿠
Publication of KR20070067147A publication Critical patent/KR20070067147A/ko
Application granted granted Critical
Publication of KR100959009B1 publication Critical patent/KR100959009B1/ko

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568Transferring the substrates through a series of coating stations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32733Means for moving the material to be treated
    • H01J37/32743Means for moving the material to be treated for introducing the material into processing chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32733Means for moving the material to be treated
    • H01J37/32752Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761Continuous moving
    • H01J37/32779Continuous moving of batches of workpieces
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
KR20077008800A 2004-10-22 2005-01-24 박막 형성 장치 및 그 방법 KR100959009B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00308047 2004-10-22
JP2004308047A JP4665155B2 (ja) 2004-10-22 2004-10-22 薄膜形成装置及びその方法

Publications (2)

Publication Number Publication Date
KR20070067147A KR20070067147A (ko) 2007-06-27
KR100959009B1 true KR100959009B1 (ko) 2010-05-20

Family

ID=36202769

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20077008800A KR100959009B1 (ko) 2004-10-22 2005-01-24 박막 형성 장치 및 그 방법

Country Status (4)

Country Link
JP (1) JP4665155B2 (ja)
KR (1) KR100959009B1 (ja)
CN (1) CN101044260B (ja)
WO (1) WO2006043343A1 (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100100958A (ko) * 2007-12-27 2010-09-15 엑사테크 엘.엘.씨. 멀티-패스 진공 코팅 시스템
CN101931024B (zh) * 2009-06-18 2012-11-07 亚洲太阳科技有限公司 用于薄膜太阳能电池制造的溅射机及溅射方法
JP2011096393A (ja) * 2009-10-27 2011-05-12 Hitachi High-Technologies Corp 有機elデバイス製造装置及びその製造方法並びに成膜装置及び成膜方法
JP2011193288A (ja) * 2010-03-15 2011-09-29 Seiko Instruments Inc パターン形成方法、パターン形成装置、圧電振動子、圧電振動子の製造方法、発振器、電子機器および電波時計
JP5524349B2 (ja) * 2010-11-15 2014-06-18 株式会社アルバック 成膜装置
JP5816189B2 (ja) * 2011-08-30 2015-11-18 新明和工業株式会社 真空成膜装置
TW201330156A (zh) * 2011-12-29 2013-07-16 Ardenne Anlagentech Gmbh 分批處理中基板處理裝置及方法
JP5939817B2 (ja) * 2012-01-30 2016-06-22 株式会社アルバック 成膜装置
JP2014028999A (ja) * 2012-07-31 2014-02-13 Ulvac Japan Ltd 成膜装置
JP2014078601A (ja) * 2012-10-10 2014-05-01 Sumitomo Heavy Ind Ltd 成膜装置用基板搬送トレイ、及び外部開閉駆動装置
JP6088964B2 (ja) 2013-12-13 2017-03-01 株式会社東芝 半導体製造装置
JP6451030B2 (ja) * 2015-01-26 2019-01-16 株式会社昭和真空 成膜装置
JP7052995B2 (ja) * 2017-11-13 2022-04-12 Necエンベデッドプロダクツ株式会社 搬送システム、制御装置、制御方法及びプログラム
JP6947396B2 (ja) * 2017-11-13 2021-10-13 Necエンベデッドプロダクツ株式会社 搬送装置及び搬送方法
JP2019187143A (ja) * 2018-04-12 2019-10-24 豊田合成株式会社 積層型誘電アクチュエータの製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08232062A (ja) * 1995-01-14 1996-09-10 Leybold Ag コーティングするための装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2603209B2 (ja) * 1983-04-12 1997-04-23 キヤノン株式会社 情報処理装置
JPH0649639A (ja) * 1992-07-31 1994-02-22 Shimadzu Corp マグネトロンスパッタ装置
JPH06108241A (ja) * 1992-09-30 1994-04-19 Shibaura Eng Works Co Ltd スパッタリング装置
JP2603209Y2 (ja) * 1993-06-16 2000-03-06 アネルバ株式会社 基板搬送装置
JPH0754284A (ja) * 1993-08-16 1995-02-28 Yoshimoto Insatsushiya:Kk プリント用積層体
JP2911797B2 (ja) * 1995-11-28 1999-06-23 ホーヤ株式会社 磁気記録媒体及びその製造方法
JPH10158835A (ja) * 1996-11-29 1998-06-16 Mitsubishi Heavy Ind Ltd 搬送装置
JP2001057449A (ja) * 1999-06-08 2001-02-27 Matsushita Electric Ind Co Ltd 薄板圧電素子並びにそれを用いた圧電振動子及び圧電発音体

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08232062A (ja) * 1995-01-14 1996-09-10 Leybold Ag コーティングするための装置

Also Published As

Publication number Publication date
WO2006043343A1 (ja) 2006-04-27
CN101044260B (zh) 2010-05-12
CN101044260A (zh) 2007-09-26
KR20070067147A (ko) 2007-06-27
JP4665155B2 (ja) 2011-04-06
JP2006118008A (ja) 2006-05-11

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