KR100762084B1 - 동 또는 동합금 타겟트/동합금 백킹 플레이트 조립체 - Google Patents
동 또는 동합금 타겟트/동합금 백킹 플레이트 조립체 Download PDFInfo
- Publication number
- KR100762084B1 KR100762084B1 KR1020067014348A KR20067014348A KR100762084B1 KR 100762084 B1 KR100762084 B1 KR 100762084B1 KR 1020067014348 A KR1020067014348 A KR 1020067014348A KR 20067014348 A KR20067014348 A KR 20067014348A KR 100762084 B1 KR100762084 B1 KR 100762084B1
- Authority
- KR
- South Korea
- Prior art keywords
- copper alloy
- copper
- backing plate
- target
- plate assembly
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C25/00—Alloys based on beryllium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/10—Alloys based on copper with silicon as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (7)
- 마그네트론 스퍼터링에 사용하는 동 또는 동합금 타겟트/동합금 백킹 플레이트 조립체로서, 동합금 백킹 플레이트가 Be: 0.2~0.5wt% 함유하는 저 베릴륨 동합금 또는 Ni: 2~4wt%, Si: 0.3~0.9wt%를 함유하는 Cu-Ni-Si합금 혹은 Ni: 2~4wt%, Si: 0.3~0.9wt%를 함유하는 Cu-Ni-Si계 합금인 것을 특징으로 하는 동 또는 동합금 타겟트/동합금 백킹 플레이트 조립체.
- 제1항에 있어서, Cu-Ni-Si계 합금 백킹 플레이트에 있어서, Ni: 2~4wt%, Si: O.3~0.9wt%, Cr: 0.1~0.9wt% 혹은 Mg: 0.1~0.9wt%를 함유하는 Cu-Ni-Si계 합금인 것을 특징으로 하는 동 또는 동합금 타겟트/동합금 백킹 플레이트 조립체.
- 제1항 또는 제2항에 있어서, 마그네트론 스퍼터링에 사용하는 동 또는 동합금 타겟트/동합금 백킹 플레이트 조립체로서, 동합금 백킹 플레이트가 도전율 35~60%(IACS), 0.2% 내력 400~850MPa를 구비하고 있는 것을 특징으로 하는 동 또는 동합금 타겟트/동합금 백킹 플레이트 조립체.
- 제1항 또는 제2항에 있어서, 확산접합 되어진 동 또는 동합금 타겟트/동합금 백킹 플레이트 조립체인 것을 특징으로 하는 동 또는 동합금 타겟트/동합금 백킹 플레이트 조립체.
- 제3항에 있어서, 확산접합 되어진 동 또는 동합금 타겟트/동합금 백킹 플레이트 조립체인 것을 특징으로 하는 동 또는 동합금 타겟트/동합금 백킹 플레이트 조립체.
- 제4항에 있어서, 확산접합 온도가 175~450℃인 것을 특징으로 하는 동 또는 동합금 타겟트/동합금 백킹 플레이트 조립체.
- 제5항에 있어서, 확산접합 온도가 175~450℃인 것을 특징으로 하는 동 또는 동합금 타겟트/동합금 백킹 플레이트 조립체.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003428520 | 2003-12-25 | ||
JPJP-P-2003-00428520 | 2003-12-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060126723A KR20060126723A (ko) | 2006-12-08 |
KR100762084B1 true KR100762084B1 (ko) | 2007-10-01 |
Family
ID=34736277
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020067014348A KR100762084B1 (ko) | 2003-12-25 | 2004-11-30 | 동 또는 동합금 타겟트/동합금 백킹 플레이트 조립체 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9472383B2 (ko) |
EP (2) | EP2626444A3 (ko) |
JP (1) | JP4331727B2 (ko) |
KR (1) | KR100762084B1 (ko) |
TW (1) | TWI263692B (ko) |
WO (1) | WO2005064036A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160098219A (ko) * | 2013-12-13 | 2016-08-18 | 프랙스에어 에스.티. 테크놀로지, 인코포레이티드 | 확산 결합된 구리 스퍼터링 타겟 조립체 |
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US7347353B2 (en) * | 2001-12-19 | 2008-03-25 | Nippon Mining & Metals Co., Ltd. | Method for connecting magnetic substance target to backing plate, and magnetic substance target |
US9896745B2 (en) * | 2002-01-30 | 2018-02-20 | Jx Nippon Mining & Metals Corporation | Copper alloy sputtering target and method for manufacturing the target |
JP4794802B2 (ja) | 2002-11-21 | 2011-10-19 | Jx日鉱日石金属株式会社 | 銅合金スパッタリングターゲット及び半導体素子配線 |
WO2004083482A1 (ja) * | 2003-03-17 | 2004-09-30 | Nikko Materials Co., Ltd. | 銅合金スパッタリングターゲット及びその製造方法並びに半導体素子配線 |
WO2005041290A1 (ja) * | 2003-10-24 | 2005-05-06 | Nikko Materials Co., Ltd. | ニッケル合金スパッタリングターゲット及びニッケル合金薄膜 |
EP2236644A3 (en) * | 2004-11-17 | 2012-01-04 | JX Nippon Mining & Metals Corporation | Sputtering target backing plate assembly and film deposition system |
JP2007084928A (ja) * | 2005-08-26 | 2007-04-05 | Hitachi Cable Ltd | 銅合金製バッキングプレートおよび該銅合金の製造方法 |
KR101040076B1 (ko) | 2006-06-29 | 2011-06-09 | Jx닛코 닛세끼 킨조쿠 가부시키가이샤 | 스퍼터링 타겟트/배킹 플레이트 접합체 |
US20100000860A1 (en) * | 2006-09-08 | 2010-01-07 | Tosoh Smd, Inc. | Copper Sputtering Target With Fine Grain Size And High Electromigration Resistance And Methods Of Making the Same |
EP2014787B1 (en) * | 2006-10-03 | 2017-09-06 | JX Nippon Mining & Metals Corporation | Cu-Mn ALLOY SPUTTERING TARGET |
CN101542011B (zh) * | 2007-02-09 | 2011-11-23 | Jx日矿日石金属株式会社 | 由高熔点难烧结物质构成的靶、靶-背衬板组件的制造方法 |
JP5676429B2 (ja) * | 2008-04-21 | 2015-02-25 | ハネウェル・インターナショナル・インコーポレーテッド | Dcマグネトロンスパッタリングシステムの設計および使用 |
US9441289B2 (en) * | 2008-09-30 | 2016-09-13 | Jx Nippon Mining & Metals Corporation | High-purity copper or high-purity copper alloy sputtering target, process for manufacturing the sputtering target, and high-purity copper or high-purity copper alloy sputtered film |
WO2010038641A1 (ja) | 2008-09-30 | 2010-04-08 | 日鉱金属株式会社 | 高純度銅及び電解による高純度銅の製造方法 |
KR20140129250A (ko) | 2009-11-20 | 2014-11-06 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 스퍼터링 타깃-백킹 플레이트 접합체 및 그 제조 방법 |
KR101031293B1 (ko) | 2010-06-16 | 2011-04-29 | 이구산업 주식회사 | 고온에서도 우수한 강도, 전기전도도를 갖는 전기, 전자부품용 고기능성 동합금 및 그 제조방법 |
WO2012057106A1 (ja) | 2010-10-27 | 2012-05-03 | Jx日鉱日石金属株式会社 | スパッタリングターゲット-バッキングプレート接合体及びその製造方法 |
KR20130121199A (ko) | 2011-09-14 | 2013-11-05 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 고순도 구리망간 합금 스퍼터링 타깃 |
CN103827349B (zh) | 2011-09-30 | 2016-08-24 | 吉坤日矿日石金属株式会社 | 溅射靶及其制造方法 |
WO2013111609A1 (ja) | 2012-01-23 | 2013-08-01 | Jx日鉱日石金属株式会社 | 高純度銅マンガン合金スパッタリングターゲット |
JP5638697B2 (ja) | 2012-01-25 | 2014-12-10 | Jx日鉱日石金属株式会社 | 高純度銅クロム合金スパッタリングターゲット |
FR3009428B1 (fr) * | 2013-08-05 | 2015-08-07 | Commissariat Energie Atomique | Procede de fabrication d'une structure semi-conductrice avec collage temporaire via des couches metalliques |
EP2960356B1 (en) * | 2013-11-06 | 2017-08-23 | JX Nippon Mining & Metals Corporation | Sputtering target/backing plate assembly |
JP2018529019A (ja) * | 2015-07-17 | 2018-10-04 | ハネウェル・インターナショナル・インコーポレーテッドHoneywell International Inc. | 金属及び金属合金の作製のための熱処理方法 |
US20170287685A1 (en) * | 2016-04-01 | 2017-10-05 | Honeywell International Inc. | Sputtering target assembly having a graded interlayer and methods of making |
JP6271798B2 (ja) * | 2016-07-13 | 2018-01-31 | 住友化学株式会社 | スパッタリングターゲットの製造方法 |
US11244815B2 (en) | 2017-04-20 | 2022-02-08 | Honeywell International Inc. | Profiled sputtering target and method of making the same |
US10685821B2 (en) * | 2017-08-18 | 2020-06-16 | Applied Materials, Inc. | Physical vapor deposition processing systems target cooling |
JP6854306B2 (ja) | 2019-02-12 | 2021-04-07 | Jx金属株式会社 | スパッタリングターゲット−バッキングプレート接合体 |
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2004
- 2004-11-30 EP EP13167078.8A patent/EP2626444A3/en not_active Withdrawn
- 2004-11-30 WO PCT/JP2004/017744 patent/WO2005064036A1/ja active Application Filing
- 2004-11-30 JP JP2005516556A patent/JP4331727B2/ja active Active
- 2004-11-30 KR KR1020067014348A patent/KR100762084B1/ko active IP Right Grant
- 2004-11-30 US US10/596,653 patent/US9472383B2/en active Active
- 2004-11-30 EP EP04820879A patent/EP1715077A4/en not_active Withdrawn
- 2004-12-08 TW TW093137901A patent/TWI263692B/zh active
Patent Citations (2)
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JPH01180975A (ja) * | 1988-01-12 | 1989-07-18 | Tanaka Kikinzoku Kogyo Kk | スパッタリング用バッキングプレート |
JPH11236665A (ja) | 1998-02-20 | 1999-08-31 | Japan Energy Corp | スパッタリングタ−ゲット用バッキングプレ−ト及びスパッタリングタ−ゲット/バッキングプレ−ト組立体 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160098219A (ko) * | 2013-12-13 | 2016-08-18 | 프랙스에어 에스.티. 테크놀로지, 인코포레이티드 | 확산 결합된 구리 스퍼터링 타겟 조립체 |
KR102364234B1 (ko) * | 2013-12-13 | 2022-02-16 | 프랙스에어 에스.티. 테크놀로지, 인코포레이티드 | 확산 결합된 구리 스퍼터링 타겟 조립체 |
Also Published As
Publication number | Publication date |
---|---|
WO2005064036A1 (ja) | 2005-07-14 |
EP2626444A2 (en) | 2013-08-14 |
US20070051624A1 (en) | 2007-03-08 |
TW200521257A (en) | 2005-07-01 |
TWI263692B (en) | 2006-10-11 |
JP4331727B2 (ja) | 2009-09-16 |
EP1715077A1 (en) | 2006-10-25 |
KR20060126723A (ko) | 2006-12-08 |
US9472383B2 (en) | 2016-10-18 |
EP2626444A3 (en) | 2013-10-16 |
EP1715077A4 (en) | 2010-09-29 |
JPWO2005064036A1 (ja) | 2007-07-19 |
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