KR100629663B1 - 반도체 장치 및 그 제조 방법 - Google Patents
반도체 장치 및 그 제조 방법 Download PDFInfo
- Publication number
- KR100629663B1 KR100629663B1 KR1020030065912A KR20030065912A KR100629663B1 KR 100629663 B1 KR100629663 B1 KR 100629663B1 KR 1020030065912 A KR1020030065912 A KR 1020030065912A KR 20030065912 A KR20030065912 A KR 20030065912A KR 100629663 B1 KR100629663 B1 KR 100629663B1
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- South Korea
- Prior art keywords
- resin
- semiconductor element
- insulating resin
- insulating
- wiring
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 202
- 238000004519 manufacturing process Methods 0.000 title claims description 46
- 238000000034 method Methods 0.000 title claims description 37
- 229920005989 resin Polymers 0.000 claims abstract description 262
- 239000011347 resin Substances 0.000 claims abstract description 262
- 230000002093 peripheral effect Effects 0.000 claims abstract description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 40
- 229910000679 solder Inorganic materials 0.000 claims description 35
- 238000000576 coating method Methods 0.000 claims description 27
- 238000005476 soldering Methods 0.000 claims description 25
- 239000002245 particle Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 15
- 239000002519 antifouling agent Substances 0.000 claims description 9
- 238000003825 pressing Methods 0.000 claims description 8
- 239000004094 surface-active agent Substances 0.000 claims description 8
- 229920001187 thermosetting polymer Polymers 0.000 claims description 8
- 238000003892 spreading Methods 0.000 claims description 3
- 239000005871 repellent Substances 0.000 claims description 2
- 238000007789 sealing Methods 0.000 description 17
- 238000010438 heat treatment Methods 0.000 description 10
- 239000004973 liquid crystal related substance Substances 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 6
- 238000007747 plating Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000013585 weight reducing agent Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000003373 anti-fouling effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
Claims (14)
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 패턴 형상으로 형성된 배선을 갖는 절연성 기판;돌기 전극을 통해 상기 배선에 전기적으로 접속되는 반도체 소자;상기 반도체 소자를 상기 절연성 기판상에 고정시키는 수지 필릿; 및상기 반도체 소자를 탑재하는 부위를 남겨서, 상기 배선을 피복하는 솔더 레지스트를 구비하고,상기 수지 필릿 (fillet) 은 적어도 절연성 수지의 상기 솔더레지스트에 대한 습윤성 (wettability) 을 조절하는 수지 튐 방지제 (anti-repellent) 를 함유하는 절연성 수지로 이루어지고,상기 수지 튐 방지제는 상기 배선 및 상기 절연성 기판에 대한 상기 습윤성을 조절하는 것이기도 한, 반도체 장치.
- 절연성 기판에 형성되는 배선에 대해, 반도체 소자를 탑재하는 부위를 남기고 솔더 레지스트를 피복하는 솔더 레지스트 피복 공정,상기 솔더 레지스트 피복 공정 후에, 상기 반도체 소자를 탑재하는 부위를 포함하는 영역에 절연성 수지를 도포하는 절연성 수지 도포 공정, 및도포된 상기 절연성 수지에 상기 반도체 소자를 올려놓고 상기 절연성 기판 상의 상기 배선에 압접시킴으로써, 상기 반도체 소자의 돌기 전극과 상기 배선을 전기적으로 접속하는 반도체 소자 가압 공정을 가지며,상기 절연성 수지 도포 공정은, 적어도 상기 절연성 수지의 습윤성을 조절하는 수지 튐 방지제를 함유하는 절연성 수지를 사용함과 동시에, 상기 반도체 소자 가압 공정에 의해 상기 반도체 소자의 하방으로부터 압출되는 상기 절연성 수지와 상기 반도체 소자의 외주부에 존재하는 상기 절연성 수지에 의해, 상기 반도체 소자의 측면에 수지 필릿이 형성되도록 상기 절연성 수지를 도포하는 단계를 포함하는, 반도체 장치의 제조 방법.
- 제 8 항에 있어서, 상기 절연성 기판으로서 절곡 가능한 절연 테이프가 사용되는, 반도체 장치의 제조 방법.
- 제 8 항에 있어서, 상기 절연성 수지 도포 공정은, 상기 수지 튐 방지제를 함유하는 상기 절연성 수지를 주위의 상기 솔더 레지스트에 접촉시키거나, 또는 일부가 상기 솔더 레지스트를 피복하도록 도포하거나, 또는 상기 솔더 레지스트 부근까지 도포하여 상기 솔더 레지스트까지 번지게 함으로써, 상기 솔더 레지스트를 피복하는 단계를 포함하는, 반도체 장치의 제조 방법.
- 제 8 항에 있어서, 상기 절연성 수지 도포 공정은, 상기 수지 튐 방지제를 함유하는 상기 절연성 수지를 상기 솔더 레지스트의 적어도 일부를 피복하도록 도포하거나, 또는 상기 솔더 레지스트 부근까지 도포하여 상기 솔더 레지스트까지 번지게 함으로써, 상기 솔더 레지스트를 피복하는 단계를 포함하는, 반도체 장치의 제조 방법.
- 제 8 항에 있어서, 상기 수지 튐 방지제로서 계면 활성제가 사용되는, 반도체 장치의 제조 방법.
- 제 8 항에 있어서, 상기 절연성 수지는 광경화성 수지 또는 열경화성 수지인, 반도체 장치의 제조 방법.
- 제 8 항에 있어서, 상기 절연성 수지 중에 도전성 입자가 분산되어 있는, 반도체 장치의 제조 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JPJP-P-2002-00287258 | 2002-09-30 | ||
JP2002287258A JP3847693B2 (ja) | 2002-09-30 | 2002-09-30 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
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KR20040028522A KR20040028522A (ko) | 2004-04-03 |
KR100629663B1 true KR100629663B1 (ko) | 2006-09-29 |
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KR1020030065912A KR100629663B1 (ko) | 2002-09-30 | 2003-09-23 | 반도체 장치 및 그 제조 방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7466030B2 (ko) |
JP (1) | JP3847693B2 (ko) |
KR (1) | KR100629663B1 (ko) |
CN (1) | CN1294652C (ko) |
TW (1) | TWI234831B (ko) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6943678B2 (en) * | 2000-01-24 | 2005-09-13 | Nextreme, L.L.C. | Thermoformed apparatus having a communications device |
JP2004327920A (ja) * | 2003-04-28 | 2004-11-18 | Sharp Corp | 半導体装置の製造方法、フレキシブル基板及び半導体装置 |
JP4024773B2 (ja) * | 2004-03-30 | 2007-12-19 | シャープ株式会社 | 配線基板、半導体装置およびその製造方法並びに半導体モジュール装置 |
JP4451214B2 (ja) * | 2004-05-21 | 2010-04-14 | シャープ株式会社 | 半導体装置 |
JP2006100385A (ja) | 2004-09-28 | 2006-04-13 | Rohm Co Ltd | 半導体装置 |
US11842972B2 (en) | 2004-09-28 | 2023-12-12 | Rohm Co., Ltd. | Semiconductor device with a semiconductor chip connected in a flip chip manner |
JP4009872B2 (ja) * | 2006-03-07 | 2007-11-21 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
US7742001B2 (en) * | 2008-03-31 | 2010-06-22 | Tdk Corporation | Two-tier wide band antenna |
JP5410387B2 (ja) * | 2010-08-31 | 2014-02-05 | デクセリアルズ株式会社 | 導電性粒子及びその製造方法、並びに異方性導電フィルム、接合体、及び接続方法 |
JP5274586B2 (ja) * | 2011-01-17 | 2013-08-28 | キヤノン・コンポーネンツ株式会社 | フレキシブル回路基板 |
US9232634B2 (en) | 2011-01-17 | 2016-01-05 | Canon Components, Inc. | Flexible circuit board for mounting light emitting element, illumination apparatus, and vehicle lighting apparatus |
KR102481381B1 (ko) * | 2016-01-11 | 2022-12-27 | 삼성디스플레이 주식회사 | 플렉서블 디스플레이 장치 |
US10879211B2 (en) | 2016-06-30 | 2020-12-29 | R.S.M. Electron Power, Inc. | Method of joining a surface-mount component to a substrate with solder that has been temporarily secured |
Family Cites Families (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1165148A (en) * | 1915-03-09 | 1915-12-21 | Francis K Shepherd | Paint and varnish remover. |
BE759288A (fr) * | 1969-11-24 | 1971-05-24 | Int Farm Systems | Installation pour cantonner et elever des animaux en milieu ferme |
US3734057A (en) * | 1971-09-01 | 1973-05-22 | G Lee | Pet toilet |
US3889881A (en) * | 1974-05-29 | 1975-06-17 | Lonnie C Cunningham | Liquid dispersal apparatus |
GB1571438A (en) * | 1977-03-15 | 1980-07-16 | Colgate Palmolive Co | Cleaning compositions |
US4175515A (en) * | 1977-12-05 | 1979-11-27 | Bradley Kenneth M | Sanitary unit for confined environmental controlled feeding of hogs |
US4424379A (en) * | 1982-07-16 | 1984-01-03 | International Flavors & Fragrances Inc. | Cyclohexenyl-alpha-alkyl acrolein derivatives |
US4834265A (en) * | 1984-02-21 | 1989-05-30 | Snyder Stuart D | Automatic watering device for decorative plants |
US4770878A (en) * | 1984-05-02 | 1988-09-13 | Thomas Richard D | Mold and dust inhibiting product and method |
US4639327A (en) * | 1985-06-20 | 1987-01-27 | Mcgaha Larry E | Composition and method for cleaning painted surfaces |
US4836144A (en) * | 1986-09-05 | 1989-06-06 | Cole John B | Method and apparatus for washing and treating animals with a recirculating fluid system |
US4700887A (en) * | 1986-12-29 | 1987-10-20 | Cornell Research Foundation, Inc. | Environmental control system for poultry houses |
US4773471A (en) * | 1988-03-17 | 1988-09-27 | Grant Ace A | Integrated water misting heating and cooling system for poultry buildings or the like |
JPH027180A (ja) | 1988-06-27 | 1990-01-11 | Hitachi Ltd | 命令一斉発火方式 |
US5054434A (en) * | 1989-09-27 | 1991-10-08 | W. R. Grace & Co.-Conn. | Suppression of ammonia odors from animal wastes |
US5656862A (en) * | 1990-03-14 | 1997-08-12 | International Business Machines Corporation | Solder interconnection structure |
US5063880A (en) * | 1990-12-03 | 1991-11-12 | Bug Atomateck Inc. | Automatic spraying device for farm animals |
JPH0777227A (ja) | 1991-04-05 | 1995-03-20 | Voith Turbo Gmbh & Co Kg | 流体式リターダ |
US5233940A (en) * | 1992-04-16 | 1993-08-10 | Zonco, Inc. | Piglet protection apparatus |
JPH06151480A (ja) * | 1992-11-13 | 1994-05-31 | Hitachi Chem Co Ltd | 導電性樹脂ペーストおよび半導体装置 |
US5865143A (en) * | 1993-09-30 | 1999-02-02 | Trustees Of University Of Arkansas And United States Of America | High-rise laying hen rearing facility and method |
US6015099A (en) * | 1993-12-10 | 2000-01-18 | Potomac Rain Room, Inc. | Method and apparatus for spraying pressurized water |
AUPM294993A0 (en) * | 1993-12-13 | 1994-01-13 | HADDON, Bruce Alexander | A deodorizer |
GB9403855D0 (en) * | 1994-03-01 | 1994-04-20 | Scotia Holdings Plc | Fatty acid derivatives |
JP3093621B2 (ja) | 1995-01-30 | 2000-10-03 | 松下電器産業株式会社 | 半導体装置の実装方法 |
US5710071A (en) * | 1995-12-04 | 1998-01-20 | Motorola, Inc. | Process for underfilling a flip-chip semiconductor device |
US5630379A (en) * | 1996-02-12 | 1997-05-20 | Ssi Corporation | Electrically controlled spraying device for cleaning and treating animals |
US6197835B1 (en) * | 1996-05-13 | 2001-03-06 | Universidad De Sevilla | Device and method for creating spherical particles of uniform size |
US5890454A (en) * | 1997-01-21 | 1999-04-06 | Trustees Of The University Of Arkansas And The United States Of America | Swine rearing facility and method for reducing ammonia and odors therein |
GB2345800A (en) * | 1997-08-19 | 2000-07-19 | Taiyo Yuden Kk | Method of manufacture for a wire wound electronic component |
EP0933809B1 (en) * | 1998-02-02 | 2006-11-29 | Shin-Etsu Chemical Co., Ltd. | Method for mounting flip-chip semiconductor devices |
US5953814A (en) * | 1998-02-27 | 1999-09-21 | Delco Electronics Corp. | Process for producing flip chip circuit board assembly exhibiting enhanced reliability |
JPH11315222A (ja) * | 1998-05-07 | 1999-11-16 | Sumitomo Chem Co Ltd | 水性塗料 |
JP2000294894A (ja) * | 1998-12-21 | 2000-10-20 | Seiko Epson Corp | 回路基板およびその製造方法ならびに回路基板を用いた表示装置および電子機器 |
US6230660B1 (en) * | 1999-06-23 | 2001-05-15 | John Stuart Greeson | Apparatus for controlling insects on an animal |
US6194470B1 (en) * | 1999-08-06 | 2001-02-27 | Bath & Body Works, Inc. | Sparkle linen spray |
US6302161B1 (en) * | 2000-01-11 | 2001-10-16 | Larry D. Heller | Process for mixing, diluting and dispensing water dilutable formulations of insecticides utilizing an injector system |
JP3536023B2 (ja) * | 2000-10-13 | 2004-06-07 | シャープ株式会社 | Cof用テープキャリアおよびこれを用いて製造されるcof構造の半導体装置 |
KR100928124B1 (ko) | 2001-01-29 | 2009-11-24 | 우베 고산 가부시키가이샤 | Cof 실장용 언더필재 및 전자부품 |
JP3696512B2 (ja) | 2001-02-13 | 2005-09-21 | シャープ株式会社 | 表示素子駆動装置およびそれを用いた表示装置 |
JP2002270652A (ja) | 2001-03-09 | 2002-09-20 | Hitachi Cable Ltd | テープキャリア及びそれを用いた半導体装置 |
JP3716237B2 (ja) | 2002-08-19 | 2005-11-16 | ナミックス株式会社 | 封止剤樹脂組成物 |
-
2002
- 2002-09-30 JP JP2002287258A patent/JP3847693B2/ja not_active Expired - Fee Related
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2003
- 2003-09-18 TW TW092125750A patent/TWI234831B/zh not_active IP Right Cessation
- 2003-09-23 KR KR1020030065912A patent/KR100629663B1/ko active IP Right Grant
- 2003-09-24 US US10/668,234 patent/US7466030B2/en not_active Expired - Lifetime
- 2003-09-30 CN CNB031255965A patent/CN1294652C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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CN1497713A (zh) | 2004-05-19 |
CN1294652C (zh) | 2007-01-10 |
TW200408025A (en) | 2004-05-16 |
JP3847693B2 (ja) | 2006-11-22 |
JP2004128056A (ja) | 2004-04-22 |
US7466030B2 (en) | 2008-12-16 |
KR20040028522A (ko) | 2004-04-03 |
TWI234831B (en) | 2005-06-21 |
US20040061240A1 (en) | 2004-04-01 |
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