KR100342596B1 - 승압회로 - Google Patents

승압회로 Download PDF

Info

Publication number
KR100342596B1
KR100342596B1 KR1019960702108A KR19960702108A KR100342596B1 KR 100342596 B1 KR100342596 B1 KR 100342596B1 KR 1019960702108 A KR1019960702108 A KR 1019960702108A KR 19960702108 A KR19960702108 A KR 19960702108A KR 100342596 B1 KR100342596 B1 KR 100342596B1
Authority
KR
South Korea
Prior art keywords
voltage
capacitor
terminal
circuit
output
Prior art date
Application number
KR1019960702108A
Other languages
English (en)
Korean (ko)
Other versions
KR960706219A (ko
Inventor
유이치 마쓰시타
Original Assignee
오끼 덴끼 고오교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오끼 덴끼 고오교 가부시끼가이샤 filed Critical 오끼 덴끼 고오교 가부시끼가이샤
Publication of KR960706219A publication Critical patent/KR960706219A/ko
Application granted granted Critical
Publication of KR100342596B1 publication Critical patent/KR100342596B1/ko

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073Charge pumps of the Schenkel-type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Direct Current Feeding And Distribution (AREA)
KR1019960702108A 1994-09-06 1995-09-06 승압회로 KR100342596B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP94-212260 1994-09-06
JP06212260A JP3102833B2 (ja) 1994-09-06 1994-09-06 昇圧回路
PCT/JP1995/001770 WO1996008070A1 (fr) 1994-09-06 1995-09-06 Circuit de preamplification

Publications (2)

Publication Number Publication Date
KR960706219A KR960706219A (ko) 1996-11-08
KR100342596B1 true KR100342596B1 (ko) 2002-12-05

Family

ID=16619637

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960702108A KR100342596B1 (ko) 1994-09-06 1995-09-06 승압회로

Country Status (7)

Country Link
US (3) US5877650A (de)
EP (1) EP0727869B1 (de)
JP (1) JP3102833B2 (de)
KR (1) KR100342596B1 (de)
DE (1) DE69532071T2 (de)
TW (1) TW297967B (de)
WO (1) WO1996008070A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7107932B2 (en) 2002-06-26 2006-09-19 Ctb Ip, Inc. Poultry feeder

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2758021B1 (fr) 1996-12-31 1999-03-05 Sgs Thomson Microelectronics Circuit elevateur de tension
KR100256226B1 (ko) * 1997-06-26 2000-05-15 김영환 레퍼런스 전압 발생 장치
JP3698550B2 (ja) * 1998-07-02 2005-09-21 富士通株式会社 ブースト回路及びこれを用いた半導体装置
AU2319600A (en) * 2000-01-27 2001-08-07 Hitachi Limited Semiconductor device
US7315438B2 (en) * 2003-06-10 2008-01-01 Seiko Epson Corporation Technique to reduce ESD loading capacitance
FR2856855A1 (fr) * 2003-06-27 2004-12-31 St Microelectronics Sa Dispositif de commande d'un commutateur commande en tension
US8536928B1 (en) * 2012-05-25 2013-09-17 Fairchild Semiconductor Corporation Constant VGS charge pump for load switch applications
US8975923B2 (en) 2012-08-20 2015-03-10 Fairchild Semiconductor Corporation Protective multiplexer
JP6469999B2 (ja) * 2014-09-11 2019-02-13 ローム株式会社 ブートストラップ回路
CN106027015B (zh) 2015-03-24 2020-02-28 快捷半导体(苏州)有限公司 增强型保护性多路复用器
USD1034729S1 (en) * 2022-08-10 2024-07-09 Boston Dynamics, Inc. Robotic device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0193919A (ja) * 1987-10-06 1989-04-12 Seiko Epson Corp レベルシフト回路
JPH01273417A (ja) * 1988-04-26 1989-11-01 Citizen Watch Co Ltd レベルシフト装置
JPH0323896A (ja) * 1989-06-21 1991-01-31 Masuki Takasu 洗濯物等の乾燥方法
US5140182A (en) * 1989-06-09 1992-08-18 Texas Instruments Incorporated Plural stage voltage booster circuit with efficient electric charge transfer between successive stages
US5196996A (en) * 1990-08-17 1993-03-23 Hyundai Electronics Industries Co., Ltd. High voltage generating circuit for semiconductor devices having a charge pump for eliminating diode threshold voltage losses
KR940016759A (ko) * 1992-12-02 1994-07-25 김주용 반도체소자의 고전압 발생기

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3942047A (en) * 1974-06-03 1976-03-02 Motorola, Inc. MOS DC Voltage booster circuit
DE2632199A1 (de) * 1976-07-16 1978-01-19 Siemens Ag Anordnung zur spannungsvervielfachung
JPS60234354A (ja) * 1984-05-07 1985-11-21 Hitachi Ltd バイアス発生回路装置
US4621315A (en) * 1985-09-03 1986-11-04 Motorola, Inc. Recirculating MOS charge pump
JPS6369455A (ja) * 1986-09-05 1988-03-29 Nec Corp 昇圧回路
KR890005159B1 (ko) * 1987-04-30 1989-12-14 삼성전자 주식회사 백 바이어스 전압 발생기
JPH0238118A (ja) * 1988-07-29 1990-02-07 Mazda Motor Corp 車両のサスペンション装置
JP2652694B2 (ja) * 1988-12-28 1997-09-10 三菱電機株式会社 昇圧回路
JPH02234460A (ja) * 1989-03-08 1990-09-17 Hitachi Ltd 半導体集積回路装置
US5267201A (en) * 1990-04-06 1993-11-30 Mosaid, Inc. High voltage boosted word line supply charge pump regulator for DRAM
JP2575956B2 (ja) * 1991-01-29 1997-01-29 株式会社東芝 基板バイアス回路
JP2636091B2 (ja) * 1991-05-17 1997-07-30 日本電気アイシーマイコンシステム株式会社 半導体集積回路
KR940003837B1 (ko) * 1991-05-22 1994-05-03 삼성전자 주식회사 기판 전압 발생회로의 구동방법
DE4130191C2 (de) * 1991-09-30 1993-10-21 Samsung Electronics Co Ltd Konstantspannungsgenerator für eine Halbleitereinrichtung mit kaskadierter Auflade- bzw. Entladeschaltung
JPH05103463A (ja) * 1991-10-07 1993-04-23 Nec Corp 電圧発生回路
US5289025A (en) * 1991-10-24 1994-02-22 At&T Bell Laboratories Integrated circuit having a boosted node
IT1258242B (it) * 1991-11-07 1996-02-22 Samsung Electronics Co Ltd Dispositivo di memoria a semiconduttore includente circuiteria di pompaggio della tensione di alimentazione
JP2633774B2 (ja) * 1992-07-24 1997-07-23 松下電子工業株式会社 アナログ・デジタル回路混在型半導体装置
JPH0660653A (ja) * 1992-08-12 1994-03-04 Hitachi Ltd 電源回路、及び半導体記憶装置
FR2696598B1 (fr) * 1992-10-01 1994-11-04 Sgs Thomson Microelectronics Circuit élévateur de tension de type pompe de charge avec oscillateur bootstrapé.
JPH06195971A (ja) 1992-10-29 1994-07-15 Mitsubishi Electric Corp 基板電位発生回路
KR0135735B1 (ko) * 1992-11-04 1998-05-15 기다오까 다까시 소음발생을 억제하는 개량된 출력 드라이버 회로 및 번인테스트를 위한 개량된 반도체 집적회로 장치
KR0157334B1 (ko) * 1993-11-17 1998-10-15 김광호 반도체 메모리 장치의 전압 승압회로
US5677645A (en) * 1995-05-08 1997-10-14 Micron Technology, Inc. Vccp pump for low voltage operation
US5721509A (en) 1996-02-05 1998-02-24 Motorola, Inc. Charge pump having reduced threshold voltage losses
US5734290A (en) * 1996-03-15 1998-03-31 National Science Council Of R.O.C. Charge pumping circuit having cascaded stages receiving two clock signals
KR100200721B1 (ko) 1996-08-20 1999-06-15 윤종용 반도체 메모리장치의 내부 승압 전압 발생기

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0193919A (ja) * 1987-10-06 1989-04-12 Seiko Epson Corp レベルシフト回路
JPH01273417A (ja) * 1988-04-26 1989-11-01 Citizen Watch Co Ltd レベルシフト装置
US5140182A (en) * 1989-06-09 1992-08-18 Texas Instruments Incorporated Plural stage voltage booster circuit with efficient electric charge transfer between successive stages
JPH0323896A (ja) * 1989-06-21 1991-01-31 Masuki Takasu 洗濯物等の乾燥方法
US5196996A (en) * 1990-08-17 1993-03-23 Hyundai Electronics Industries Co., Ltd. High voltage generating circuit for semiconductor devices having a charge pump for eliminating diode threshold voltage losses
KR940016759A (ko) * 1992-12-02 1994-07-25 김주용 반도체소자의 고전압 발생기

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7107932B2 (en) 2002-06-26 2006-09-19 Ctb Ip, Inc. Poultry feeder

Also Published As

Publication number Publication date
US6225853B1 (en) 2001-05-01
EP0727869A4 (de) 1999-12-08
WO1996008070A1 (fr) 1996-03-14
EP0727869A1 (de) 1996-08-21
TW297967B (de) 1997-02-11
DE69532071D1 (de) 2003-12-11
EP0727869B1 (de) 2003-11-05
JP3102833B2 (ja) 2000-10-23
KR960706219A (ko) 1996-11-08
JPH0880033A (ja) 1996-03-22
US6297690B1 (en) 2001-10-02
DE69532071T2 (de) 2004-07-08
US5877650A (en) 1999-03-02

Similar Documents

Publication Publication Date Title
JP4094104B2 (ja) 半導体集積回路装置および記憶装置
KR100312140B1 (ko) 반도체집적회로장치및기억장치
KR100298159B1 (ko) 충전펌프
JP2755047B2 (ja) 昇圧電位発生回路
KR100300243B1 (ko) 승압회로및이것을이용한반도체장치
KR19990083421A (ko) 전압승압을제한하는승압회로
KR100342596B1 (ko) 승압회로
KR0167872B1 (ko) 반도체장치의 내부전원회로
US4731552A (en) Boost signal generator with bootstrap means
US5278798A (en) Semiconductor memory device
KR100211481B1 (ko) 전압 발생 회로가 구비된 반도체 메모리 디바이스
KR19990083335A (ko) 승압회로
KR19990050472A (ko) 승압전압 발생회로
JP3698550B2 (ja) ブースト回路及びこれを用いた半導体装置
KR100296612B1 (ko) 출력버퍼의출력전류를크게할수있는반도체기억장치
JP4394835B2 (ja) 低パワー集積回路用高速オンチップ電圧発生器
KR0149224B1 (ko) 반도체 집적장치의 내부전압 승압회로
KR100253726B1 (ko) 승압 회로 및 강압 회로
JPH09294367A (ja) 電圧供給回路
JP4243027B2 (ja) 改良されたワードラインブースト回路
JP4435203B2 (ja) 半導体集積回路装置
JP2000262044A (ja) 半導体集積回路装置
US5638023A (en) Charge pump circuit
KR0170286B1 (ko) 반도체 메모리장치의 전압 승압회로
US6278651B1 (en) High voltage pump system for programming fuses

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20050614

Year of fee payment: 4

LAPS Lapse due to unpaid annual fee