JPWO2017057372A1 - 光検出装置 - Google Patents
光検出装置 Download PDFInfo
- Publication number
- JPWO2017057372A1 JPWO2017057372A1 JP2017543435A JP2017543435A JPWO2017057372A1 JP WO2017057372 A1 JPWO2017057372 A1 JP WO2017057372A1 JP 2017543435 A JP2017543435 A JP 2017543435A JP 2017543435 A JP2017543435 A JP 2017543435A JP WO2017057372 A1 JPWO2017057372 A1 JP WO2017057372A1
- Authority
- JP
- Japan
- Prior art keywords
- light
- fabry
- perot interference
- outer edge
- filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005540 biological transmission Effects 0.000 claims abstract description 186
- 239000000853 adhesive Substances 0.000 claims description 115
- 230000001070 adhesive effect Effects 0.000 claims description 115
- 238000001514 detection method Methods 0.000 claims description 101
- 239000000758 substrate Substances 0.000 claims description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 25
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 10
- 239000007769 metal material Substances 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 82
- 239000000463 material Substances 0.000 description 20
- 239000011521 glass Substances 0.000 description 19
- 125000006850 spacer group Chemical group 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- 230000000694 effects Effects 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 229920005591 polysilicon Polymers 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- 238000000149 argon plasma sintering Methods 0.000 description 9
- 239000011241 protective layer Substances 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 8
- 230000009471 action Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 239000004033 plastic Substances 0.000 description 7
- 239000010453 quartz Substances 0.000 description 7
- 239000011810 insulating material Substances 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 230000035882 stress Effects 0.000 description 5
- 230000008646 thermal stress Effects 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000008188 pellet Substances 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000006060 molten glass Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/12—Generating the spectrum; Monochromators
- G01J3/26—Generating the spectrum; Monochromators using multiple reflection, e.g. Fabry-Perot interferometer, variable interference filters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
- G01J3/0213—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows using attenuators
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0256—Compact construction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0291—Housings; Spectrometer accessories; Spatial arrangement of elements, e.g. folded path arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0801—Means for wavelength selection or discrimination
- G01J5/0802—Optical filters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/041—Mountings in enclosures or in a particular environment
- G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/213—Fabry-Perot type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Nonlinear Science (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Spectrometry And Color Measurement (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Optical Filters (AREA)
Abstract
Description
[第1実施形態]
[光検出装置の構成]
[ファブリペロー干渉フィルタの構成]
[作用及び効果]
[第2実施形態]
[光検出装置の構成]
[作用及び効果]
[変形例]
[第3実施形態]
[光検出装置の構成]
[ファブリペロー干渉フィルタの構成]
[作用及び効果]
[第4実施形態]
[光検出装置の構成]
[作用及び効果]
[第5実施形態]
[光検出装置の構成]
[作用及び効果]
[第6実施形態]
[光検出装置の構成]
[作用及び効果]
[変形例]
Claims (16)
- 互いの距離が可変とされた第1ミラー及び第2ミラーを有し、前記第1ミラーと前記第2ミラーとの距離に応じた光を透過させる光透過領域が所定のライン上に設けられたファブリペロー干渉フィルタと、
前記ライン上において前記ファブリペロー干渉フィルタの第1の側に配置され、前記光透過領域を透過した光を検出する光検出器と、
前記ライン上において前記ファブリペロー干渉フィルタの第2の側に位置する開口を有し、前記ファブリペロー干渉フィルタ及び前記光検出器を収容するパッケージと、
前記開口を塞ぐように前記パッケージの内面に配置され、前記光透過領域に入射させる光を透過させるバンドパスフィルタを含む光透過部と、を備え、
前記ラインに平行な方向から見た場合に、前記ファブリペロー干渉フィルタの外縁は、前記開口の外縁よりも外側に位置しており、前記光透過部の外縁は、前記ファブリペロー干渉フィルタの前記外縁よりも外側に位置している、光検出装置。 - 前記光透過部は、前記バンドパスフィルタが設けられた光透過部材を更に含み、
前記ラインに平行な方向から見た場合に、前記光透過部材の外縁は、前記ファブリペロー干渉フィルタの前記外縁よりも外側に位置している、請求項1記載の光検出装置。 - 前記ラインに平行な方向から見た場合に、前記バンドパスフィルタの外縁は、前記ファブリペロー干渉フィルタの前記外縁よりも外側に位置している、請求項2記載の光検出装置。
- 前記光透過部材の厚さは、前記ファブリペロー干渉フィルタと前記光透過部材との距離に0.5を乗じた値以上の値である、請求項2又は3記載の光検出装置。
- 前記ファブリペロー干渉フィルタは、前記第1ミラー及び前記第2ミラーを支持するシリコン基板を有し、
前記光検出器は、光電変換領域が形成されたInGaAs基板を有する、請求項2〜4のいずれか一項記載の光検出装置。 - 前記バンドパスフィルタは、前記光透過部材の光出射面に設けられている、請求項2〜5のいずれか一項記載の光検出装置。
- 前記パッケージを貫通するリードピンと、
前記ファブリペロー干渉フィルタの端子と前記リードピンとを電気的に接続するワイヤと、を更に備える、請求項2〜6のいずれか一項記載の光検出装置。 - 接着部材を更に備え、
前記バンドパスフィルタの形状は、多角形板状であり、
前記パッケージは、前記開口が形成された第1壁部、前記ファブリペロー干渉フィルタ、前記バンドパスフィルタ及び前記光検出器を挟んで前記第1壁部と対向する第2壁部、並びに、前記ファブリペロー干渉フィルタ、前記バンドパスフィルタ及び前記光検出器を包囲する円筒状の側壁部を有し、
前記接着部材は、前記第1壁部の内面に対して前記バンドパスフィルタを固定しており、
前記ラインに平行な方向から見た場合に、前記バンドパスフィルタの外縁は、前記ファブリペロー干渉フィルタの前記外縁よりも外側に位置している、請求項1記載の光検出装置。 - 前記開口を塞ぐように前記第1壁部の前記内面に配置された光透過部材を更に備え、
前記バンドパスフィルタは、前記接着部材によって、前記光透過部材の内面に固定されており、
前記接着部材は、前記光透過部材の前記内面と対向する前記バンドパスフィルタの光入射面の全領域に配置されている、請求項8記載の光検出装置。 - 前記開口を塞ぐように前記第1壁部の前記内面に配置された光透過部材を更に備え、
前記バンドパスフィルタは、前記接着部材によって、前記光透過部材の内面に固定されており、
前記接着部材は、前記光透過部材の前記内面と対向する前記バンドパスフィルタの光入射面のうち角領域を除く領域に配置されておらず、前記角領域に配置されている、請求項8記載の光検出装置。 - 前記バンドパスフィルタは、前記接着部材によって、前記第1壁部の前記内面に固定されており、
前記接着部材は、前記第1壁部の前記内面と対向する前記バンドパスフィルタの光入射面のうち前記開口と対向する対向領域を除く領域に配置されている、請求項8記載の光検出装置。 - 前記バンドパスフィルタは、前記接着部材によって、前記第1壁部の前記内面に固定されており、
前記接着部材は、前記第1壁部の前記内面と対向する前記バンドパスフィルタの光入射面のうち角領域を除く領域に配置されておらず、前記角領域に配置されている、請求項8記載の光検出装置。 - 前記接着部材は、前記ラインに平行な方向から見た場合に、前記バンドパスフィルタの前記外縁から外側に突出しており、
前記接着部材のうち前記バンドパスフィルタの前記外縁から外側に突出した部分は、前記バンドパスフィルタの側面に接触している、請求項9〜12のいずれか一項記載の光検出装置。 - 前記ラインに平行な方向から見た場合に、前記開口の形状は、円形状である、請求項8〜13のいずれか一項記載の光検出装置。
- 前記バンドパスフィルタの形状は、四角形板状である、請求項8〜14のいずれか一項記載の光検出装置。
- 前記パッケージは、金属材料によって形成されている、請求項8〜15のいずれか一項記載の光検出装置。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015196516 | 2015-10-02 | ||
JP2015196516 | 2015-10-02 | ||
JP2016109495 | 2016-05-31 | ||
JP2016109495 | 2016-05-31 | ||
PCT/JP2016/078476 WO2017057372A1 (ja) | 2015-10-02 | 2016-09-27 | 光検出装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2017057372A1 true JPWO2017057372A1 (ja) | 2018-07-19 |
JP6945450B2 JP6945450B2 (ja) | 2021-10-06 |
Family
ID=58427777
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017543435A Active JP6945450B2 (ja) | 2015-10-02 | 2016-09-27 | 光検出装置 |
Country Status (7)
Country | Link |
---|---|
US (3) | US10656020B2 (ja) |
EP (1) | EP3358320A4 (ja) |
JP (1) | JP6945450B2 (ja) |
KR (1) | KR20180062463A (ja) |
CN (2) | CN108139270B (ja) |
TW (1) | TWI743053B (ja) |
WO (1) | WO2017057372A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5987573B2 (ja) * | 2012-09-12 | 2016-09-07 | セイコーエプソン株式会社 | 光学モジュール、電子機器、及び駆動方法 |
JP7039160B2 (ja) * | 2016-03-09 | 2022-03-22 | 浜松ホトニクス株式会社 | 光検出装置 |
JP7142419B2 (ja) | 2017-05-01 | 2022-09-27 | 浜松ホトニクス株式会社 | 光計測制御プログラム、光計測システム及び光計測方法 |
EP3640703A4 (en) * | 2017-06-13 | 2021-03-31 | Hamamatsu Photonics K.K. | OPTICAL FILTER SYSTEM |
JP7313115B2 (ja) * | 2017-11-24 | 2023-07-24 | 浜松ホトニクス株式会社 | 光検査装置及び光検査方法 |
JP6517309B1 (ja) * | 2017-11-24 | 2019-05-22 | 浜松ホトニクス株式会社 | 異物除去方法、及び光検出装置の製造方法 |
JP7388815B2 (ja) | 2018-10-31 | 2023-11-29 | 浜松ホトニクス株式会社 | 分光ユニット及び分光モジュール |
DE102018221522A1 (de) | 2018-12-12 | 2020-06-18 | Robert Bosch Gmbh | Spektrometervorrichtung und Verfahren zum Herstellen einer Spektrometervorrichtung |
JP7181784B2 (ja) * | 2018-12-18 | 2022-12-01 | 浜松ホトニクス株式会社 | モニタ装置、光学フィルタシステム、モニタ方法、電流発生装置 |
DE102019207383A1 (de) | 2019-05-21 | 2020-11-26 | Robert Bosch Gmbh | Interferometereinrichtung und Verfahren zum Herstellen einer Interferometereinrichtung |
DE102019213270A1 (de) | 2019-09-03 | 2021-03-04 | Robert Bosch Gmbh | Interferometereinrichtung und Verfahren zum Herstellen einer Interferometereinrichtung |
JP2021060249A (ja) * | 2019-10-04 | 2021-04-15 | 浜松ホトニクス株式会社 | 分光ユニット及び分光モジュール |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58178647U (ja) * | 1982-05-26 | 1983-11-29 | オムロン株式会社 | 単色光センサ |
JP2014013339A (ja) * | 2012-07-05 | 2014-01-23 | Seiko Epson Corp | 波長可変干渉フィルター、光学フィルターデバイス、光学モジュール、及び電子機器 |
JP2015049276A (ja) * | 2013-08-30 | 2015-03-16 | セイコーエプソン株式会社 | 干渉フィルター、光学フィルターデバイス、光学モジュール、電子機器、及び光学部材 |
WO2015064758A1 (ja) * | 2013-10-31 | 2015-05-07 | 浜松ホトニクス株式会社 | 光検出装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58178647A (ja) | 1982-04-12 | 1983-10-19 | Toshiba Corp | 位相同期回路 |
US6747742B1 (en) * | 2001-06-22 | 2004-06-08 | Tanner Research, Inc. | Microspectrometer based on a tunable fabry-perot interferometer and microsphere cavities |
TWI240794B (en) * | 2004-03-02 | 2005-10-01 | Ind Tech Res Inst | Wavelength meter |
US7417746B2 (en) * | 2005-12-29 | 2008-08-26 | Xerox Corporation | Fabry-perot tunable filter systems and methods |
US20080049228A1 (en) * | 2006-08-28 | 2008-02-28 | Novaspectra, Inc. | Fabry-perot interferometer array |
KR101503079B1 (ko) * | 2007-06-08 | 2015-03-16 | 하마마츠 포토닉스 가부시키가이샤 | 분광기 |
FI125817B (fi) * | 2009-01-27 | 2016-02-29 | Teknologian Tutkimuskeskus Vtt Oy | Parannettu sähköisesti säädettävä Fabry-Perot-interferometri, välituote, elektrodijärjestely ja menetelmä sähköisesti säädettävän Fabry-Perot-interferometrin tuottamiseksi |
DE102009035386B4 (de) * | 2009-07-30 | 2011-12-15 | Cochlear Ltd. | Hörhilfeimplantat |
JP5048795B2 (ja) * | 2010-01-21 | 2012-10-17 | 浜松ホトニクス株式会社 | 分光装置 |
CN102789993B (zh) * | 2011-05-17 | 2015-08-19 | 重庆鹰谷光电有限公司 | 高效、广角、抗干扰、微型激光接收器的制作方法 |
JP5878723B2 (ja) * | 2011-10-04 | 2016-03-08 | 浜松ホトニクス株式会社 | 分光センサ |
JP5966405B2 (ja) * | 2012-02-14 | 2016-08-10 | セイコーエプソン株式会社 | 光学フィルターデバイス、及び光学フィルターデバイスの製造方法 |
JP5875936B2 (ja) * | 2012-05-18 | 2016-03-02 | 浜松ホトニクス株式会社 | 分光センサ |
JP6107254B2 (ja) * | 2013-03-14 | 2017-04-05 | セイコーエプソン株式会社 | 光学フィルターデバイス、光学モジュール、及び電子機器 |
JP6290594B2 (ja) * | 2013-10-31 | 2018-03-07 | 浜松ホトニクス株式会社 | 光検出装置 |
US10156473B2 (en) * | 2015-09-02 | 2018-12-18 | The Boeing Company | Remote target identification using laser Doppler vibrometry |
-
2016
- 2016-09-27 CN CN201680058106.4A patent/CN108139270B/zh active Active
- 2016-09-27 EP EP16851543.5A patent/EP3358320A4/en active Pending
- 2016-09-27 JP JP2017543435A patent/JP6945450B2/ja active Active
- 2016-09-27 KR KR1020187012004A patent/KR20180062463A/ko not_active Application Discontinuation
- 2016-09-27 US US15/764,943 patent/US10656020B2/en active Active
- 2016-09-27 WO PCT/JP2016/078476 patent/WO2017057372A1/ja active Application Filing
- 2016-09-27 CN CN202110544596.1A patent/CN113358223A/zh active Pending
- 2016-09-30 TW TW105131786A patent/TWI743053B/zh active
-
2020
- 2020-04-08 US US16/843,244 patent/US11835388B2/en active Active
-
2023
- 2023-09-27 US US18/373,532 patent/US20240019304A1/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58178647U (ja) * | 1982-05-26 | 1983-11-29 | オムロン株式会社 | 単色光センサ |
JP2014013339A (ja) * | 2012-07-05 | 2014-01-23 | Seiko Epson Corp | 波長可変干渉フィルター、光学フィルターデバイス、光学モジュール、及び電子機器 |
JP2015049276A (ja) * | 2013-08-30 | 2015-03-16 | セイコーエプソン株式会社 | 干渉フィルター、光学フィルターデバイス、光学モジュール、電子機器、及び光学部材 |
WO2015064758A1 (ja) * | 2013-10-31 | 2015-05-07 | 浜松ホトニクス株式会社 | 光検出装置 |
Also Published As
Publication number | Publication date |
---|---|
US11835388B2 (en) | 2023-12-05 |
CN108139270B (zh) | 2021-06-08 |
KR20180062463A (ko) | 2018-06-08 |
US20180292267A1 (en) | 2018-10-11 |
EP3358320A4 (en) | 2019-07-17 |
TW201725367A (zh) | 2017-07-16 |
JP6945450B2 (ja) | 2021-10-06 |
US20240019304A1 (en) | 2024-01-18 |
WO2017057372A1 (ja) | 2017-04-06 |
TWI743053B (zh) | 2021-10-21 |
US20200232852A1 (en) | 2020-07-23 |
CN108139270A (zh) | 2018-06-08 |
US10656020B2 (en) | 2020-05-19 |
EP3358320A1 (en) | 2018-08-08 |
CN113358223A (zh) | 2021-09-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2017057372A1 (ja) | 光検出装置 | |
KR102255742B1 (ko) | 광검출 장치 | |
JP7047161B2 (ja) | 光検出装置 | |
KR102661190B1 (ko) | 광 검출 장치 | |
US20240230405A1 (en) | Spectroscopic unit and spectroscopic module | |
JP2024086931A (ja) | 光検出装置 | |
WO2024034202A1 (ja) | 光検出装置及びアパーチャ部 | |
WO2023062881A1 (ja) | 光検出システム及び電圧決定方法 | |
JP7114766B2 (ja) | 光検出装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190607 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200526 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200727 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20201117 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20210115 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210316 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210824 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210914 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6945450 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |