JPS6472540A - Radiation microscope and method for detecting light emitted from defect in dielectric layer of integrated circuit device - Google Patents

Radiation microscope and method for detecting light emitted from defect in dielectric layer of integrated circuit device

Info

Publication number
JPS6472540A
JPS6472540A JP63150385A JP15038588A JPS6472540A JP S6472540 A JPS6472540 A JP S6472540A JP 63150385 A JP63150385 A JP 63150385A JP 15038588 A JP15038588 A JP 15038588A JP S6472540 A JPS6472540 A JP S6472540A
Authority
JP
Japan
Prior art keywords
optical
integrated circuit
circuit device
dielectric layer
defect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63150385A
Other languages
English (en)
Other versions
JPH0760846B2 (ja
Inventor
Esuriji Pouru
Roozengausu Eriizaa
Fuan Gerudaa Ezura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Instruments Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Instruments Corp filed Critical KLA Instruments Corp
Publication of JPS6472540A publication Critical patent/JPS6472540A/ja
Publication of JPH0760846B2 publication Critical patent/JPH0760846B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95638—Inspecting patterns on the surface of objects for PCB's
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/66—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/20—Special algorithmic details
    • G06T2207/20036—Morphological image processing
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Biochemistry (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Quality & Reliability (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Theoretical Computer Science (AREA)
  • Toxicology (AREA)
  • General Engineering & Computer Science (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Investigating Or Analysing Materials By The Use Of Chemical Reactions (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP63150385A 1987-08-31 1988-06-20 集積回路装置の誘電体層中の欠陥から放射された光を検出する放射顕微鏡検査装置および方法 Expired - Lifetime JPH0760846B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US91.682 1987-08-31
US07/091,682 US4755874A (en) 1987-08-31 1987-08-31 Emission microscopy system

Publications (2)

Publication Number Publication Date
JPS6472540A true JPS6472540A (en) 1989-03-17
JPH0760846B2 JPH0760846B2 (ja) 1995-06-28

Family

ID=22229122

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63150385A Expired - Lifetime JPH0760846B2 (ja) 1987-08-31 1988-06-20 集積回路装置の誘電体層中の欠陥から放射された光を検出する放射顕微鏡検査装置および方法

Country Status (5)

Country Link
US (1) US4755874A (ja)
EP (1) EP0305644B1 (ja)
JP (1) JPH0760846B2 (ja)
AT (1) ATE71736T1 (ja)
DE (1) DE3867766D1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0479343A (ja) * 1990-07-23 1992-03-12 Nippon Telegr & Teleph Corp <Ntt> 半導体集積回路の解析方法および解析装置
KR100383258B1 (ko) * 2000-11-09 2003-05-09 삼성전자주식회사 주사 전자 현미경을 이용한 측정 장치의 측정 에러 검출방법
JP2009139155A (ja) * 2007-12-04 2009-06-25 Ueno Seiki Kk 検査システム、画像検査装置及びその制御方法
US9939486B2 (en) 2012-06-22 2018-04-10 International Business Machines Corporation Integrated time dependent dielectric breakdown reliability testing

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US5030829A (en) * 1988-06-08 1991-07-09 Siemens Aktiengesellschaft Method and apparatus for investigating latch-up propagation in complementary-metal-oxide-semiconductor (CMOS) circuits
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JP2925647B2 (ja) * 1990-04-16 1999-07-28 オリンパス光学工業株式会社 顕微鏡変倍装置
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US5391885A (en) * 1991-04-26 1995-02-21 Sharp Kabushiki Kaisha Method of detecting and analyzing defective portion of semiconductor element and apparatus for detecting and analyzing the same
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US6529018B1 (en) 1998-08-28 2003-03-04 International Business Machines Corporation Method for monitoring defects in polysilicon gates in semiconductor devices responsive to illumination by incident light
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0479343A (ja) * 1990-07-23 1992-03-12 Nippon Telegr & Teleph Corp <Ntt> 半導体集積回路の解析方法および解析装置
KR100383258B1 (ko) * 2000-11-09 2003-05-09 삼성전자주식회사 주사 전자 현미경을 이용한 측정 장치의 측정 에러 검출방법
JP2009139155A (ja) * 2007-12-04 2009-06-25 Ueno Seiki Kk 検査システム、画像検査装置及びその制御方法
US9939486B2 (en) 2012-06-22 2018-04-10 International Business Machines Corporation Integrated time dependent dielectric breakdown reliability testing

Also Published As

Publication number Publication date
US4755874A (en) 1988-07-05
EP0305644A3 (en) 1989-12-06
DE3867766D1 (de) 1992-02-27
EP0305644B1 (en) 1992-01-15
EP0305644A2 (en) 1989-03-08
ATE71736T1 (de) 1992-02-15
JPH0760846B2 (ja) 1995-06-28

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