JPS6445005A - Transparent conductive film - Google Patents

Transparent conductive film

Info

Publication number
JPS6445005A
JPS6445005A JP62200893A JP20089387A JPS6445005A JP S6445005 A JPS6445005 A JP S6445005A JP 62200893 A JP62200893 A JP 62200893A JP 20089387 A JP20089387 A JP 20089387A JP S6445005 A JPS6445005 A JP S6445005A
Authority
JP
Japan
Prior art keywords
transparent conductive
conductive film
partial pressure
outermost surface
ito layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62200893A
Other languages
Japanese (ja)
Inventor
Sumiyoshi Kanazawa
Takeshi Harano
Satoru Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP62200893A priority Critical patent/JPS6445005A/en
Publication of JPS6445005A publication Critical patent/JPS6445005A/en
Pending legal-status Critical Current

Links

Landscapes

  • Non-Insulated Conductors (AREA)
  • Laminated Bodies (AREA)

Abstract

PURPOSE:To reduce film thickness for obtaining a desired sheet resistance by making oxidation degree of a transparent conductive film mainly including In oxide smaller at closer parts to an outermost surface. CONSTITUTION:A transparent conductive film 5 is applied by reactive sputtering in gas mixture of Ar and O2 on a substrate 1 of In including 10wt.% of Sn which is heated at 300 deg.C for a target. For this, sputtering is performed at a partial pressure of oxygen gas which gives the minimum specific resistance so as to form an ITO layer 2 first, and then the partial pressure of oxygen gas is reduced so as to form an ITO layer 3 of thickness of more than 100Angstrom and a small oxidation degree at the outermost surface.
JP62200893A 1987-08-13 1987-08-13 Transparent conductive film Pending JPS6445005A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62200893A JPS6445005A (en) 1987-08-13 1987-08-13 Transparent conductive film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62200893A JPS6445005A (en) 1987-08-13 1987-08-13 Transparent conductive film

Publications (1)

Publication Number Publication Date
JPS6445005A true JPS6445005A (en) 1989-02-17

Family

ID=16432006

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62200893A Pending JPS6445005A (en) 1987-08-13 1987-08-13 Transparent conductive film

Country Status (1)

Country Link
JP (1) JPS6445005A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008262201A (en) * 2007-04-11 2008-10-30 Boe Hydis Technology Co Ltd Color filter substrate for liquid crystal display and method of fabricating same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008262201A (en) * 2007-04-11 2008-10-30 Boe Hydis Technology Co Ltd Color filter substrate for liquid crystal display and method of fabricating same

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