JPS63243259A - Production of very thin ceramic film - Google Patents
Production of very thin ceramic filmInfo
- Publication number
- JPS63243259A JPS63243259A JP7903687A JP7903687A JPS63243259A JP S63243259 A JPS63243259 A JP S63243259A JP 7903687 A JP7903687 A JP 7903687A JP 7903687 A JP7903687 A JP 7903687A JP S63243259 A JPS63243259 A JP S63243259A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- ceramic film
- thin ceramic
- ultra
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 238000004544 sputter deposition Methods 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 5
- 238000007733 ion plating Methods 0.000 claims abstract 2
- 238000007740 vapor deposition Methods 0.000 claims abstract 2
- 239000010408 film Substances 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- 238000000034 method Methods 0.000 abstract description 6
- 239000000126 substance Substances 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 229910052593 corundum Inorganic materials 0.000 description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000005028 tinplate Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000003852 thin film production method Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、主として中高音用スピーカーの振動板として
用いるセラミックス極薄膜の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method of manufacturing an ultra-thin ceramic film mainly used as a diaphragm for a speaker for medium and high frequencies.
（従来の技術）
従来、中高音用スピーカーの振動板には、Ａ２Ｔｉ等の
金属薄膜が使われていた。(Prior Art) Conventionally, a metal thin film such as A2Ti has been used for the diaphragm of a speaker for medium and high frequencies.
（発明が解決しようとする問題点）
ところが、近時軽量で剛性の高い材料から成る振動板が
要求されているが、これまで使われているＡｌ、Ｔｉ等
の金属薄膜は圧延により製造される為、軽量化には限界
がある。この為、Ａ １２０３、ＴｉＮ等のセラミック
スが考えられるが、セラミックスは従来の研摩技術では
数１００μｍオーダーまでの研摩が限界であり、数１０
μｍオーダーの研摩は不可能であり、また任意の形状に
加工することは困難であった。(Problem to be solved by the invention) However, in recent years, there has been a demand for diaphragms made of lightweight and highly rigid materials, but the metal thin films of Al, Ti, etc. that have been used so far are manufactured by rolling. Therefore, there is a limit to weight reduction. For this reason, ceramics such as A1203 and TiN can be considered, but conventional polishing techniques can only polish ceramics to a depth of several 100 μm.
Polishing on the μm order was impossible, and it was difficult to process into any desired shape.
（発明の目的）
本発明は、上記諸事情に鑑みなされたもので、数１０μ
ｍオーダーのセラミックス極薄膜を得ることのできる製
造方法を提供することを目的とするものである。(Object of the invention) The present invention was made in view of the above-mentioned circumstances.
The object of the present invention is to provide a manufacturing method capable of obtaining an ultra-thin ceramic film of m order.
（問題点を解決するための手段）
上記問題点を解決するための本発明のセラミックス極薄
膜の製造方法は、エツチング可能な金属基板にメタルマ
スクをセットして所要のパターンを得、次に蒸着、スパ
ッタリング、イオンプレーティング、ＣＶＤ （化学気
相成長）等により金属基板上にセラミックスの０．１〜
５０μｍの極薄膜を形成し、然る後エツチングにより金
属基板を除去し、単独のセラミックス極薄膜を得ること
を特徴とするものである。(Means for Solving the Problems) In order to solve the above problems, the method for manufacturing ultra-thin ceramic films of the present invention involves setting a metal mask on an etched metal substrate to obtain a desired pattern, and then depositing Ceramics of 0.1 to
The method is characterized in that an extremely thin film of 50 μm is formed, and then the metal substrate is removed by etching to obtain a single extremely thin ceramic film.
（作用）
上記のように本発明のセラミックス極薄膜の製造方法は
従来のメタルマスクをセットし、真空中における薄膜作
成法を利用して、セラミックスの極薄膜を作成するので
あるから、軽量で剛性の高いセラミックス極薄膜を容易
に得ることができる。(Function) As mentioned above, the method for producing an ultra-thin ceramic film of the present invention involves setting a conventional metal mask and using a thin film production method in vacuum to create an ultra-thin ceramic film, which is lightweight and rigid. It is possible to easily obtain ultra-thin ceramic films with high
（実施例）
本発明のセラミックス極薄膜の製造方法の第１実施例を
第１図及び第２図によって説明する。第１図に示す如（
スパッタリング装置１内のテーブル２に、酸、アルカリ
でエツチング可能なＡｊ２、Ｃｕ、ＳＵＳ等の金属、本
例ではＣ’ｕより成る縦６（１＋ｍ、横６０鰭、厚さ０
．０５ｍｍより成る基板３をセットし、このＣｕ基板３
上に縦８０龍、横８０酊の外側形状、直径３０龍の内側
形状で厚さ０．１ｍｍの５ＵＳ３１４より成る枠状のメ
タルマスク４をセントして所要のパターンを得た。次に
Ｃｕ基板３に対向してテーブル５にターゲットとして直
径１５２．４ｍｍ、厚さ５ ｍｍの、ｌ！２０３板６を
セントし、Ｃｕ基板３とＡｌ２Ｏ３板６との間隔を９０
龍となした後、スパッタリング装置１内を５ ｘｔｏ−
”ｒ ｏ ｒ ｒまで真空線引きした後１．０×ｌ０−
３Ｔ ｏ ｒ ｒのＡｒガス雰囲気になし、Ａｌ２Ｏ３
をＲＦ３に−で１０時間スパッターして、メタルマスク
４内のＣｕ５板３上のパターンにＡｌ２Ｏ３をコーティ
ングして２０μｍの極薄膜７を形成した。冷却後、スパ
ッタリング装置１内よりＣｕ基板３を取り出し、Ｃｕ基
板３上のメタルマスク４を外し、第２図に示す如＜Ｃｕ
基板３を槽８内のエツチング液９、本例では２１に３０
分間浸漬し、Ｃｕ基板３を溶解除去し、直径３０龍、厚
さ２０μｍの円形の単独のＡｌ２Ｏ３極薄膜７を得た。(Example) A first example of the method for manufacturing an ultra-thin ceramic film of the present invention will be described with reference to FIGS. 1 and 2. As shown in Figure 1 (
On the table 2 in the sputtering apparatus 1, there are 6 vertical (1 + m, 60 fins, 0 thickness) made of metal such as Aj2, Cu, SUS, etc., which can be etched with acid or alkali, in this example C'u.
．． Set the substrate 3 made of 0.05 mm, and
A frame-shaped metal mask 4 made of 5US314 with a thickness of 0.1 mm and an outer shape of 80 mm in length and 80 mm in width and an inner shape of 30 mm in diameter was placed on top to obtain the desired pattern. Next, a target with a diameter of 152.4 mm and a thickness of 5 mm was placed on the table 5 facing the Cu substrate 3. 203 plate 6, and set the distance between Cu substrate 3 and Al2O3 plate 6 to 90 mm.
After forming a dragon, the inside of the sputtering device 1 was heated to 5xto-
” After vacuum drawing to r o r r 1.0×l0-
Al2O3 without Ar gas atmosphere of 3T o r r
was sputtered with RF3 for 10 hours to coat the pattern on the Cu5 plate 3 in the metal mask 4 with Al2O3 to form an ultra-thin film 7 of 20 μm. After cooling, the Cu substrate 3 is taken out from inside the sputtering apparatus 1, the metal mask 4 on the Cu substrate 3 is removed, and the
The substrate 3 is placed in an etching solution 9 in a bath 8, in this example 21 to 30.
After dipping for a minute, the Cu substrate 3 was dissolved and removed to obtain a single circular Al2O3 ultrathin film 7 with a diameter of 30 mm and a thickness of 20 μm.
次に第２実施例を第３図及び第４図によって説明する。Next, a second embodiment will be explained with reference to FIGS. 3 and 4.
第３図に示す如くスパッタリング装置１内のテーブル２
に、鏡面加工したコーン状の５ＵＳ３１４より成る基板
３′をセットし、この基板３′上に外径６０１Ｉｍ、内
径２０龍、厚さ０．１ｍ（７） Ｓ Ｕ ５３１４より
成る環状のメタルマスク４′をセットして所要のパター
ンを得た。次に基板３′に対向してテーブル５にターゲ
ットとして直径１５２．４＋ｎのＴｉＮ板６′をセント
し、基板３′とＴｉＮ板６′との間隔を９０鶴となした
後、スパッタリング装置１内を５ ｘｔｏ−”ｒ ｏ
ｒ ｒまで真空線引きした後１．０×１０−’Ｔ ｏ
ｒ ｒのＡｒガス雰囲気になし、ＴｉＮを５００Ｖで１
０時間スパンターして、メタルマスク４′内の基板３′
上のパターンにＴｉＮをコーティングして３０μｍの極
薄膜７′を形成した。冷却後スパッタリング装置１内よ
り基板３′を取出し、基板３′上のメタルマスク４′を
外し、第４図に示す如く基板３′を槽８内のエツチング
液９、本例では２１に１時間浸漬し、基板３′溶解除去
し、直径２０關、高さ２０鶴の、厚さ３０μｍのコーン
形の単独ＴｉＮ極薄膜７′を得た。Table 2 in sputtering apparatus 1 as shown in FIG.
A substrate 3' made of mirror-finished cone-shaped 5US314 was set on the substrate 3', and an annular metal mask 4 made of S U 5314 with an outer diameter of 601 mm, an inner diameter of 20 mm, and a thickness of 0.1 m (7) was placed on the substrate 3'. ′ was set to obtain the desired pattern. Next, a TiN plate 6' with a diameter of 152.4+n is placed as a target on the table 5 facing the substrate 3', and after setting the distance between the substrate 3' and the TiN plate 6' to be 90 mm, the sputtering device 1 is placed. 5xto-”r o
After vacuum drawing to r r 1.0×10-'T o
TiN was heated at 500 V at 1 in an Ar gas atmosphere of r r.
Spunter for 0 hours and remove the substrate 3' inside the metal mask 4'.
The upper pattern was coated with TiN to form an extremely thin film 7' having a thickness of 30 μm. After cooling, the substrate 3' is taken out from inside the sputtering apparatus 1, the metal mask 4' on the substrate 3' is removed, and the substrate 3' is soaked in the etching solution 9 in the bath 8, in this example, for 1 hour at 21, as shown in FIG. The substrate 3' was immersed, and the substrate 3' was dissolved and removed to obtain a cone-shaped single TiN ultra-thin film 7' with a diameter of 20 mm, a height of 20 mm, and a thickness of 30 μm.
こうして得られた第１実施例のＡｌ２Ｏ３極薄膜７及び
第２実施例のＴ ｉ Ｎ極薄膜７′は共に軽量で剛性の
高いので中高音用スピーカーの振動板として好適なであ
る。Both the Al2O3 ultra-thin film 7 of the first embodiment and the T i N ultra-thin film 7' of the second embodiment thus obtained are lightweight and have high rigidity, and are therefore suitable as a diaphragm for a speaker for medium and high frequencies.
（発明の効果）
以上の説明で判るように本発明のセラミックス極薄膜の
製造方法によれば、従来不可能だった０、１〜５０μｍ
の膜厚で、所要形状のセラミ・７クスより成る軽量で剛
性の高い中高音用スピーカーの振動板として好適な極薄
膜を容易に得ることができるという効果がある。(Effects of the Invention) As can be seen from the above explanation, according to the method for producing an ultra-thin ceramic film of the present invention, the thickness of 0.1 to 50 μm, which was previously impossible,
The present invention has the effect that it is possible to easily obtain an ultra-thin film suitable as a diaphragm for a lightweight, highly rigid mid-to-high frequency speaker made of ceramic 7x having a desired shape.
第１図及び第２図は本発明のセラミックス極薄膜の製造
方法の第１実施例の工程を示す図、第３図及び第４図は
本発明のセラミックス極薄膜の製造方法の第２実施例の
工程を示す図である。
出願人 田中貴金属工業株式会社
第２図
第４図
７′・・・ ７ｉＮ極尋゛狭1 and 2 are diagrams showing the steps of a first embodiment of the method for producing an ultra-thin ceramic film of the present invention, and FIGS. 3 and 4 are diagrams showing a second embodiment of the method for producing an ultra-thin ceramic film of the present invention. FIG. Applicant Tanaka Kikinzoku Kogyo Co., Ltd. Figure 2 Figure 4 7'... 7iN extremely narrow
Claims (1)
所要のパターンを得、次に蒸着、スパッタリング、イオ
ンプレーティング、ＣＶＤ（化学気相成長）等により金
属基板上にセラミックスの０．１〜５０μｍの極薄膜を
形成し、然る後エッチングにより金属基板を除去し単独
のセラミックス極薄膜を得ることを特徴とするセラミッ
クス極薄膜の製造方法。A metal mask is set on an etchable metal substrate to obtain the desired pattern, and then 0.1 to 50 μm ceramic electrodes are placed on the metal substrate by vapor deposition, sputtering, ion plating, CVD (chemical vapor deposition), etc. 1. A method for producing an ultra-thin ceramic film, which comprises forming a thin film and then removing a metal substrate by etching to obtain a single ultra-thin ceramic film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7903687A JPS63243259A (en) | 1987-03-31 | 1987-03-31 | Production of very thin ceramic film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7903687A JPS63243259A (en) | 1987-03-31 | 1987-03-31 | Production of very thin ceramic film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63243259A true JPS63243259A (en) | 1988-10-11 |
Family
ID=13678691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7903687A Pending JPS63243259A (en) | 1987-03-31 | 1987-03-31 | Production of very thin ceramic film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63243259A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015151579A (en) * | 2014-02-14 | 2015-08-24 | 大日本印刷株式会社 | Method for manufacturing vapor deposition mask device, vapor deposition mask with substrate, and laminate |
| JP2019151936A (en) * | 2019-06-11 | 2019-09-12 | 大日本印刷株式会社 | Method for manufacturing vapor deposition mask device, vapor deposition mask having substrate, and laminate |
-
1987
- 1987-03-31 JP JP7903687A patent/JPS63243259A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015151579A (en) * | 2014-02-14 | 2015-08-24 | 大日本印刷株式会社 | Method for manufacturing vapor deposition mask device, vapor deposition mask with substrate, and laminate |
| JP2019151936A (en) * | 2019-06-11 | 2019-09-12 | 大日本印刷株式会社 | Method for manufacturing vapor deposition mask device, vapor deposition mask having substrate, and laminate |
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