JPS63142826A - Probe card - Google Patents
Probe cardInfo
- Publication number
- JPS63142826A JPS63142826A JP29115786A JP29115786A JPS63142826A JP S63142826 A JPS63142826 A JP S63142826A JP 29115786 A JP29115786 A JP 29115786A JP 29115786 A JP29115786 A JP 29115786A JP S63142826 A JPS63142826 A JP S63142826A
- Authority
- JP
- Japan
- Prior art keywords
- probe
- stylus
- wafer
- chips
- probe needle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000523 sample Substances 0.000 title claims abstract description 80
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 abstract description 6
- 241001422033 Thestylus Species 0.000 abstract 4
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 238000007790 scraping Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 16
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 231100000241 scar Toxicity 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Measuring Leads Or Probes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明目的〕
（産業上の利用分野）
本発明は半導体ウェハ及び半導体素子をａｔｑ定する場
合に用いるプローブカードに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a probe card used for atq determination of semiconductor wafers and semiconductor devices.
（従来の技術）
半導体ウェハのチップを１ｌｌｌ’ｌ定する工程をブロ
ービングと称されており、このブロービングを精度よく
、能率よく、実行する必要がある。このブロービングを
実行するためにプローブカードを用いて、半導体素子を
測定している。(Prior Art) The process of defining each chip on a semiconductor wafer is called blobbing, and it is necessary to perform this blobbing accurately and efficiently. In order to perform this probing, a probe card is used to measure the semiconductor device.
従来のプローブカードの構造は特開昭５８−３０１３９
号公報に記載されているように基板に固定リングを取付
け、この固定リングに多数のプローブ針が固着された構
造が一般的である。The structure of the conventional probe card is disclosed in Japanese Patent Application Laid-Open No. 58-30139.
As described in the above publication, a structure in which a fixing ring is attached to a substrate and a large number of probe needles are fixed to this fixing ring is common.
（発明が解決しようとする問題点）
しかし、このような構造のプローブカードではプローブ
針の先端が半導体ウェハのチップの電極パッドに接触さ
せるときに、上記の半導体ウェハの表面には酸化膜によ
って被膜が覆われており、この被膜をプローブ針の先端
で突き破るためには、第３図で示すようにプローブ針の
先端（８１）がウェハ（６０）に接触した後、さらにＰ
点までチャックを介してウェハを上昇させることにより
、そのプローブ針（８０）の先端（８１）がずれによる
移動距Ｍ（Ｓ）を横ずれをしながら酸化膜に喰い込み、
酸化膜の下側の電極パッド（６１）に接触する。この接
触時に 。(Problem to be solved by the invention) However, in a probe card with such a structure, when the tip of the probe needle contacts the electrode pad of the chip of the semiconductor wafer, the surface of the semiconductor wafer is coated with an oxide film. In order to break through this coating with the tip of the probe needle, after the tip (81) of the probe needle contacts the wafer (60), as shown in FIG.
By raising the wafer to the point via the chuck, the tip (81) of the probe needle (80) bites into the oxide film while shifting laterally over the movement distance M(S) due to the shift.
It contacts the electrode pad (61) under the oxide film. upon this contact.
おいて、プローブ針（８０）の先端（８１）で横ずれを
しながら酸化膜に喰い込み、電極パッドに接触した後も
、横ずれをして電極パッドに掻き傷を残してしまう。こ
の電極パッドに大きな掻き傷を生じると１例えば、電極
パッドとリード部との間を配線した後、大きな掻き傷が
原因で配線不良となり、製品の歩留り低下をきたす問題
点があった。また従来の上記のプローブカードの構造上
、ウェハを１ステツプ毎に歩進させて、チップをプロー
ブカードのプローブ針に接触させて測定しなければ、測
定することができない。よって製造時間の短縮ができな
い他の問題点があった。In this case, the tip (81) of the probe needle (80) bites into the oxide film while shifting laterally, and even after contacting the electrode pad, the tip (81) of the probe needle (80) shifts laterally and leaves a scratch on the electrode pad. If large scratches occur on the electrode pads, for example, after wiring between the electrode pads and the lead portions, the large scratches will result in poor wiring, resulting in a reduction in product yield. Further, due to the structure of the conventional probe card described above, measurement cannot be performed unless the wafer is advanced one step at a time and the chip is brought into contact with the probe needle of the probe card. Therefore, there were other problems in that the manufacturing time could not be shortened.
本発明は上記の問題点を鑑みてなされたもので、上記プ
ローブ針がウェハのチップの表面に酸化膜を突き破り、
チップの電極パッドにプローブ針の先端程度の針跡の付
加により接触し測定する。一方、複数個のチップを同時
に複数組のプローブ針と接触させて、複数個のチップを
同時に測定することができる構造にしたプローブカード
を提供することを目的とする。The present invention was made in view of the above-mentioned problems, and the probe needle breaks through the oxide film on the surface of the chip of the wafer.
Measurements are made by making contact with the electrode pad of the chip by adding a needle mark about the size of the tip of a probe needle. On the other hand, it is an object of the present invention to provide a probe card having a structure that allows a plurality of chips to be brought into contact with a plurality of sets of probe needles at the same time so that a plurality of chips can be measured simultaneously.
（問題点を解決するための手段）
上記目的を達成するために本発明によるプローブカード
（５０）は略垂下した複数個のプローブ針の先端部が直
交した平面方向に揃うように、他端部を固着した固着手
段と上記プローブ針の先端部が半導体ウェハのチップの
電極パッドに誘導させるガイド手段と、上記固着手段を
一定振動を発生させる振動手段との構成で上記振動手段
によって、上記固着手段を一定時振動させる構造である
。(Means for Solving the Problems) In order to achieve the above object, the probe card (50) according to the present invention has a plurality of substantially hanging probe needles whose other ends are arranged so that their tips are aligned in the orthogonal plane direction. The fixing means is composed of a fixing means to which the probe needle is fixed, a guide means for guiding the tip of the probe needle to the electrode pad of the chip of the semiconductor wafer, and a vibrating means for generating a constant vibration in the fixing means. It has a structure that vibrates for a certain period of time.
（作用）
振動手段の振動子が固着手段のプローブ固定部を振動さ
せ、そのプローブ固定部に固着されているプローブ針が
振動し、その振動により、プローブ針の先端部がガイド
手段の孔部で方向が制御され対応するチップの電極パッ
ドに向って上下振動し、ウェハの酸化膜を破損させ、電
極パッドに到達したのち、振動を停止させる。上記の停
止はチップの種類別で区別され、予め設定しておくこと
により、電極パッドに深進することを防いでいる。(Function) The vibrator of the vibrating means vibrates the probe fixing part of the fixing means, the probe needle fixed to the probe fixing part vibrates, and the vibration causes the tip of the probe needle to touch the hole of the guide means. The direction of the vibration is controlled and it vibrates up and down toward the electrode pad of the corresponding chip, damaging the oxide film on the wafer and stopping the vibration after reaching the electrode pad. The above-mentioned stop is differentiated depending on the type of chip, and is set in advance to prevent the chip from advancing deeply into the electrode pad.
上記の深進は、振動手段で行うのであるが例えば超音波
の振巾や周波数により制御ができる。The above-mentioned deep advancement is performed by a vibration means, but it can be controlled by, for example, the amplitude and frequency of ultrasonic waves.
（実施例） 以下本発明を図示の一実施例に基づいて説明する。(Example) The present invention will be explained below based on an illustrated embodiment.
第１図は本発明のプローブカードの構造を示す断面図で
ある。第２図は本発明のプローブカードとチャック上の
半導体ウェハとの関係を示した断面図である。固着手段
は、プローブ針（２１）は測定対象となる半導体チップ
の電極パッドの数に対応する本数だけ設けられている。FIG. 1 is a sectional view showing the structure of the probe card of the present invention. FIG. 2 is a sectional view showing the relationship between the probe card of the present invention and the semiconductor wafer on the chuck. The fixing means includes probe needles (21) whose number corresponds to the number of electrode pads of the semiconductor chip to be measured.
これらのプローブ針（２１）は第２図で示すように半導
体ウェハ（６０）のチップの＠極パッド間の距離（ｆｌ
）に対応したプローブ針（２１）間の距離（Ｌ）とが同
等の距離に配置されて形成されている。尚上記プローブ
針（２１）は配線部（２１ｃ）同一の材質である必要は
ない。そして、プローブ固定部（４２）に穴部（４２ａ
）を設け、その穴部は円形状にプローブ針数量だけ配置
されている。These probe needles (21) are connected to the distance (fl) between the chips of the semiconductor wafer (60) as shown in FIG.
) are arranged at the same distance (L) between the probe needles (21). Note that the probe needle (21) does not need to be made of the same material as the wiring part (21c). Then, a hole portion (42a) is provided in the probe fixing portion (42).
), and the holes are arranged in a circular shape corresponding to the number of probe needles.
上記のプローブ固定部（４２）は金属でもよいが絶縁部
材（２１ａ）でプローブ針（２１）を固着する際にプロ
ーブ針（２１）が金属材であるプローブ固定部（４２）
に接触する可能性も生じてくるので、できれば非金属材
の方が適切である。The above-mentioned probe fixing part (42) may be made of metal, but when fixing the probe needle (21) with the insulating member (21a), the probe fixing part (42) in which the probe needle (21) is made of a metal material is used.
If possible, a non-metallic material is more appropriate as there is a possibility of contact with other materials.
上記プローブ針（２１）が絶縁部材（２１ａ）で固着さ
れたプローブ固定部（４２）に振動手段の振動子（３２
）が配設されて、かつ上記プローブ固定部（４２）は基
板（１０）に立設した支持部（４１）に保持された構造
である。The probe needle (21) is attached to a probe fixing part (42) fixed with an insulating member (21a) and a vibrator (32) of the vibrating means.
) is disposed, and the probe fixing part (42) is held by a support part (41) erected on the substrate (10).
またこの基板（１０）はプローブ針（２１）が振動子の
振動により上下に移動する時に、プローブ針（２１）の
先端を一定方向にガイドする。This substrate (10) also guides the tip of the probe needle (21) in a fixed direction when the probe needle (21) moves up and down due to the vibration of the vibrator.
本実施例では、このプローブ針（２１）を固着したプロ
ーブ固定部（４２）に振動子（３２）を配設し、そのプ
ローブ固定部（４２）を振動させることによりそのプロ
ーブ固定部に固着したプローブ針（２１）を振動させて
、 ウェハ表面の酸化膜（６１ａ）をプローブ針（２１
）の上下移動で破損させ電極パッドにプローブ針（２１
）を接触することになる。In this embodiment, a vibrator (32) is disposed on the probe fixing part (42) to which the probe needle (21) is fixed, and the probe needle (21) is fixed to the probe fixing part by vibrating the probe fixing part (42). The probe needle (21) is vibrated to remove the oxide film (61a) on the wafer surface.
) by moving it up and down, and insert the probe needle (21) into the electrode pad.
).
この振動回数は各ウェハの種類によって、予め設定して
おくので電極パッド自身の破損は生じない、また、プロ
ーブ針が垂直に近い配列構造であるので複数個のチップ
に対応するプローブ針を基板（１０）に配置することが
できる。すなわち、第４図に示すように、ウェハ（６０
）の表面の複数個のチップ例えば、Ａチップ（７１）と
Ｂチップ（７２）とＣチップ（７３）を同時測定するこ
とのできるプローブ針（２１）の配列が可能である。The number of vibrations is set in advance depending on the type of each wafer, so the electrode pad itself will not be damaged.Also, since the probe needles are arranged nearly vertically, the probe needles corresponding to multiple chips can be connected to the substrate. 10). That is, as shown in FIG.
It is possible to arrange the probe needles (21) that can simultaneously measure a plurality of chips, for example, the A chip (71), the B chip (72), and the C chip (73) on the surface of the probe.
（発明の効果）
垂直に近い状態で立設したプローブ針（２１）を固定板
に固着させ、その固定板を振動子で振動させて、プロー
ブ針（２１）を上下に振動する構造を用いたので、垂直
に近い状態で立設したプローブ針の先端が上下に振動し
てウェハ表面の酸化膜を突き破り電極パッドに接触する
。その１ｔｔＩＩｌ！パッド表面に接触したプローブ針
の先端は横ずれによる移動距離が無いので、プローブ針
先の面積の傷跡しか生じないのでリード部とボンデング
する際の製品の歩留り向上の効果がある。(Effects of the Invention) A structure is used in which the probe needle (21), which is set up nearly vertically, is fixed to a fixed plate, and the fixed plate is vibrated by a vibrator to vibrate the probe needle (21) up and down. Therefore, the tip of the probe needle, which is set up nearly vertically, vibrates up and down, breaking through the oxide film on the wafer surface and coming into contact with the electrode pad. That 1ttIIl! Since the tip of the probe needle in contact with the pad surface does not move a distance due to lateral displacement, only a scar corresponding to the area of the tip of the probe needle is generated, which has the effect of improving the yield of products when bonding with the lead part.
また、垂直に近い状態で立設したプローブ針の配列構造
であるからプローブ針を固着する固定部が複数個のチッ
プに対応するプローブ針を固着可能になり複数組のプロ
ーブ針を固定部に固着することができ、よって複数組の
チップを同時に測定することができる大きな効果がある
。In addition, since the probe needles are arranged in a nearly vertical arrangement, the fixing part that fixes the probe needles can fix probe needles corresponding to multiple chips, and multiple sets of probe needles can be fixed to the fixing part. Therefore, there is a great effect that multiple sets of chips can be measured simultaneously.
第１図は本発明の一実施例を示すプローブカードの断面
図、第２図は本発明の一実施例をプローバに使用した説
明における断面図、第３図は従来のプローブカードの断
面図。
１０：基板 １１：導通部
１２：絶縁部 １２ｂ：孔部
２１ニブローブ針
２１ａ：固定部材（金属使用の場合絶縁部材）２１ｂ＝
接続部
２１ｃ：配線部（プローブ針と導通部）２１ｄ：先端
３１：振動部
３２：振動子 ４２ニブロ一ブ固定部４２ａ：
穴（溝）５０ニブローブカード６０：ウェハ
６１：チップ
７０：チャック８ｏ：従来のプローブ針８１．８２：先
端 Ｌニブローブ針の軸間距離Ｑ二チップの電極間距
離
Ｓ：ずれによる移動距離FIG. 1 is a cross-sectional view of a probe card showing an embodiment of the present invention, FIG. 2 is a cross-sectional view illustrating the use of the embodiment of the present invention in a prober, and FIG. 3 is a cross-sectional view of a conventional probe card. 10: Substrate 11: Conductive part 12: Insulating part 12b: Hole 21 Nib lobe needle 21a: Fixing member (insulating member when using metal) 21b=
Connection part 21c: Wiring part (probe needle and conduction part) 21d: Tip
31: Vibrating part 32: Vibrator 42 Nibrow one fixing part 42a:
Hole (groove) 50 nib lobe card 60: wafer
61: Tip 70: Chuck 8o: Conventional probe needle 81. 82: Tip L nib Probe needle axis distance Q Distance between electrodes of two tips S: Movement distance due to misalignment
Claims (1)
に揃うように他端部を固着した固着手段と、上記プロー
ブ針の先端部が半導体ウェハのチップの電極パッドに誘
導させるガイド手段と、上記固着手段に一定振動を発生
させる振動手段との構成で、上記振動手段によって上記
固着手段を一定時間振動させたことを特徴としたプロー
ブカード。fixing means for fixing the other ends of the plurality of substantially hanging probe needles so that their tips are aligned with orthogonal planes; and guide means for guiding the tips of the probe needles to electrode pads of chips of the semiconductor wafer; A probe card comprising a vibrating means for generating constant vibrations in the fixing means, the probe card being characterized in that the fixing means is vibrated for a fixed period of time by the vibrating means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29115786A JPS63142826A (en) | 1986-12-05 | 1986-12-05 | Probe card |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29115786A JPS63142826A (en) | 1986-12-05 | 1986-12-05 | Probe card |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63142826A true JPS63142826A (en) | 1988-06-15 |
| JPH0582972B2 JPH0582972B2 (en) | 1993-11-24 |
Family
ID=17765182
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29115786A Granted JPS63142826A (en) | 1986-12-05 | 1986-12-05 | Probe card |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63142826A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5631573A (en) * | 1994-09-20 | 1997-05-20 | Mitsubishi Denki Kabushiki Kaisha | Probe-type test handler |
| EP0908944A1 (en) * | 1997-10-09 | 1999-04-14 | Commissariat A L'energie Atomique | Electrical characterisation of an insulating layer on a conductive or semiconductive substrate |
| JP2005297185A (en) * | 2004-04-15 | 2005-10-27 | Fei Co | Stylus system for correcting micro-structure |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5040550U (en) * | 1973-08-04 | 1975-04-24 | ||
| JPS5569058A (en) * | 1978-11-20 | 1980-05-24 | Fujitsu Ltd | Contact method for probe |
| JPS57115841A (en) * | 1981-01-10 | 1982-07-19 | Nec Corp | Probing method |
| JPS58169068A (en) * | 1982-03-31 | 1983-10-05 | Toshiba Corp | Characteristic measurement of semiconductor device |
| JPS58148935U (en) * | 1982-03-31 | 1983-10-06 | 日本電子材料株式会社 | probe card |
-
1986
- 1986-12-05 JP JP29115786A patent/JPS63142826A/en active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5040550U (en) * | 1973-08-04 | 1975-04-24 | ||
| JPS5569058A (en) * | 1978-11-20 | 1980-05-24 | Fujitsu Ltd | Contact method for probe |
| JPS57115841A (en) * | 1981-01-10 | 1982-07-19 | Nec Corp | Probing method |
| JPS58169068A (en) * | 1982-03-31 | 1983-10-05 | Toshiba Corp | Characteristic measurement of semiconductor device |
| JPS58148935U (en) * | 1982-03-31 | 1983-10-06 | 日本電子材料株式会社 | probe card |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5631573A (en) * | 1994-09-20 | 1997-05-20 | Mitsubishi Denki Kabushiki Kaisha | Probe-type test handler |
| EP0908944A1 (en) * | 1997-10-09 | 1999-04-14 | Commissariat A L'energie Atomique | Electrical characterisation of an insulating layer on a conductive or semiconductive substrate |
| FR2769753A1 (en) * | 1997-10-09 | 1999-04-16 | Commissariat Energie Atomique | ELECTRICAL CHARACTERIZATION OF AN INSULATING LAYER COVERING A CONDUCTIVE OR SEMICONDUCTOR SUBSTRATE |
| US6074886A (en) * | 1997-10-09 | 2000-06-13 | Commissariat A L'energie Atomique | Electrical characterization of an insulating layer covering a conducting or semiconducting substrate |
| JP2005297185A (en) * | 2004-04-15 | 2005-10-27 | Fei Co | Stylus system for correcting micro-structure |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0582972B2 (en) | 1993-11-24 |
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