JPS6244493Y2 - - Google Patents
Info
- Publication number
- JPS6244493Y2 JPS6244493Y2 JP8950382U JP8950382U JPS6244493Y2 JP S6244493 Y2 JPS6244493 Y2 JP S6244493Y2 JP 8950382 U JP8950382 U JP 8950382U JP 8950382 U JP8950382 U JP 8950382U JP S6244493 Y2 JPS6244493 Y2 JP S6244493Y2
- Authority
- JP
- Japan
- Prior art keywords
- support shaft
- hollow support
- insulating substrate
- hole
- circular
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 31
- 238000007790 scraping Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Landscapes
- Adjustable Resistors (AREA)
Description
【考案の詳細な説明】
本考案は半固定可変抵抗器に関し、特に摺動子
を支承する中空支軸の絶縁基板への取付構造に関
する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semi-fixed variable resistor, and more particularly to a structure for attaching a hollow support shaft for supporting a slider to an insulating substrate.
半固定可変抵抗器は第1図のように構成され、
半固定可変抵抗器の絶縁基板上には第2図のよう
な抵抗皮膜がプリントされている。 The semi-fixed variable resistor is constructed as shown in Figure 1,
A resistive film as shown in FIG. 2 is printed on the insulating substrate of the semi-fixed variable resistor.
第1図は半固定可変抵抗器の側断面図、第2図
は第1図の絶縁基板の平面図である。 FIG. 1 is a side sectional view of the semi-fixed variable resistor, and FIG. 2 is a plan view of the insulating substrate of FIG. 1.
第1図及び第2図において、1はセラミツクな
どの絶縁基板で、この絶縁基板1には円形状の貫
通孔2が穿設され、絶縁基板1上には抵抗皮膜3
が印刷によつて形成されている。 1 and 2, reference numeral 1 denotes an insulating substrate made of ceramic or the like, a circular through hole 2 is formed in the insulating substrate 1, and a resistive film 3 is formed on the insulating substrate 1.
is formed by printing.
4は銀ペーストよりなる集電体、5は導電ワツ
シヤーで、集電体4の上に導電ワツシヤー5を印
刷したのは摺動子6による集電体4の摩耗を防ぐ
ためのものである。 4 is a current collector made of silver paste; 5 is a conductive washer; the conductive washer 5 is printed on the current collector 4 to prevent the current collector 4 from being abraded by the slider 6;
絶縁基板1の円形状貫通孔2には中空状の支軸
7が挿通され、この中空支軸7には一枚の弾性金
属板よりなり、重畳状に折曲げられた摺動子6が
回転可能に支承され、この摺動子6の両端には第
1図に示す如く摺動子6自体が曲成されて接触突
子9,10が形成されている。 A hollow support shaft 7 is inserted into the circular through hole 2 of the insulating substrate 1, and a slider 6 made of a single elastic metal plate and bent in an overlapping manner is rotated in the hollow support shaft 7. As shown in FIG. 1, the slider 6 itself is bent to form contact protrusions 9 and 10 at both ends of the slider 6.
この接触突子9は導電ワツシヤー5を介して集
電体4に、また他端の接触突子10は抵抗皮膜3
上を摺動するようになつている。 This contact protrusion 9 is connected to the current collector 4 via the conductive washer 5, and the contact protrusion 10 at the other end is connected to the resistive film 3.
It is designed to slide on the top.
なお、6aは摺動子6の折曲部、6bは駆動用
の一対の突片で、11はスペーサ用の小突子、1
2はワツシヤーである。 In addition, 6a is a bent part of the slider 6, 6b is a pair of protrusions for driving, 11 is a small protrusion for a spacer, 1
2 is Watshiya.
この様に半固定可変抵抗器は構成され、突片6
bによつて摺動子6を中空支軸7を中心に回動さ
せることによつて、接触突子9,10が集電体
4、抵抗皮膜3上を摺動して抵抗値を可変にする
ものである。 The semi-fixed variable resistor is constructed in this way, and the protrusion 6
By rotating the slider 6 around the hollow support shaft 7 using b, the contact protrusions 9 and 10 slide on the current collector 4 and the resistive film 3, thereby making the resistance value variable. It is something to do.
ところが従来の絶縁基板1への中空支軸7の取
付け構造は、第3図に示す如く絶縁基板1へ円形
状の貫通孔2を穿設してこの円形状の貫通孔2内
へ中空支軸7を挿通し、第1図及び第4図に示す
如く中空支軸7の先端7aがカール状に折曲げら
れてめ7bによつて絶縁基板1に固定されてい
た。 However, in the conventional mounting structure of the hollow support shaft 7 to the insulating substrate 1, as shown in FIG. As shown in FIGS. 1 and 4, the tip 7a of the hollow support shaft 7 was bent into a curled shape and fixed to the insulating substrate 1 by a hook 7b.
このために、摺動子6の回転によつて中空支軸
7が連れ回りを起し、そのために中空支軸7が貫
通孔2の内周面と摩擦して絶縁基板1を削り、あ
るいは中空支軸7の先端7aが絶縁基板1を削つ
てこの削りによる粉粒が接触部に飛散し、接触不
良を発生する欠点があつた。 For this reason, the rotation of the slider 6 causes the hollow support shaft 7 to rotate with the rotation of the slider 6, and as a result, the hollow support shaft 7 rubs against the inner peripheral surface of the through hole 2, scraping the insulating substrate 1, or The tip 7a of the support shaft 7 scrapes the insulating substrate 1, and powder particles caused by this scraping scatter at the contact area, resulting in poor contact.
本考案はかかる従来の欠点を解消しようとする
もので、その目的とするところは、中空支軸の回
転を阻止して絶縁基板を削り取ることを防止しよ
うとするものである。 The present invention attempts to eliminate such conventional drawbacks, and its purpose is to prevent the rotation of the hollow support shaft and thereby prevent the insulating substrate from being scraped off.
本考案はこの目的を達成するために、絶縁基板
に穿設される貫通孔を非円形状にし、中空支軸を
この非円形状の貫通孔にそつて変形させることに
よつて、中空支軸の回転を防止したものである。 In order to achieve this objective, the present invention makes the through-hole drilled in the insulating substrate non-circular and deforms the hollow support shaft along the non-circular through-hole. This prevents rotation.
以下本考案の実施例を図面とともに説明する
が、第5図は絶縁基板1の横断面図で、中空支軸
7をめる前の貫通孔と中空支軸7の関係を示
し、第6図は絶縁基板1の裏面における中空支軸
7の先端7aをめた状態を示し、第7図A,B
はめ作業に用いた角錐状ポンチの側面図及び上
面図である。 Embodiments of the present invention will be described below with reference to the drawings. FIG. 5 is a cross-sectional view of the insulating substrate 1, showing the relationship between the through hole and the hollow support shaft 7 before the hollow support shaft 7 is inserted, and FIG. 7A and 7B show the state in which the tip 7a of the hollow support shaft 7 is attached to the back surface of the insulating substrate 1, and FIGS.
FIG. 3 is a side view and a top view of a pyramidal punch used in the fitting operation.
なお、図中の符号1〜12までは従来のものと
同一であり、13は絶縁基板1に穿設した非円形
状(本実施例では正方形)の貫通孔、14はめ
端部、15はめ端部14に形成された亀裂、1
6はめによつて形成された角、17は角錐状ポ
ンチ、18は角錐状ポンチ17の鋭角状の面であ
る。 Note that the numbers 1 to 12 in the figure are the same as those of the conventional one, and 13 is a non-circular (square in this example) through hole drilled in the insulating substrate 1, 14 is a fitting end, and 15 is a fitting end. Crack formed in part 14, 1
17 is a pyramid-shaped punch, and 18 is an acute-angled surface of the pyramid-shaped punch 17.
つまり、本考案のものと従来のものの異る点は
従来のものにおいては第3図に示す如く絶縁基板
1に穿設される貫通孔2は円形状で、この円形状
の貫通孔2に円形状の中空支軸7を貫通させて、
中空支軸7の先端7aをカール状に曲成してめ
7bによつて絶縁基板1へ中空支軸7を取り付け
ていたが、本考案のものは第5図に示す如く絶縁
基板1に穿設される貫通孔13は非円形状で、こ
の非円形状の貫通孔13へ円形状の中空支軸7を
挿通し、この円形状の中空支軸7を第6図に示す
様に非円形状の貫通孔13の形状にそつて非円形
状にめて角16を形成させ、この角16によつ
て中空支軸7の回転運動を防止した点である。 In other words, the difference between the present invention and the conventional one is that in the conventional one, the through hole 2 formed in the insulating substrate 1 is circular, as shown in FIG. The hollow support shaft 7 of the shape is penetrated,
The tip 7a of the hollow support shaft 7 was bent into a curled shape and the hollow support shaft 7 was attached to the insulating substrate 1 with a hook 7b, but in the present invention, the tip 7a of the hollow support shaft 7 is bent into a curled shape and the hollow support shaft 7 is attached to the insulating substrate 1 with a hole 7a as shown in FIG. The provided through hole 13 has a non-circular shape, and the circular hollow support shaft 7 is inserted into the non-circular through hole 13, and the circular hollow support shaft 7 is inserted into the non-circular shape as shown in FIG. The point is that a corner 16 is formed by forming a non-circular shape along the shape of the through hole 13, and the rotational movement of the hollow support shaft 7 is prevented by this corner 16.
つまり、第5図の中空支軸7内へ第7図A,B
に示す角錐状ポンチ17を挿入すれば、今まで円
形状であつた中空支軸7は、第6図に示す如く絶
縁基板1の非円形状の貫通孔13にそつて変形さ
れ、ついには第6図のようにめ端部14には亀
裂15が入つて花弁状にめられる。 In other words, into the hollow support shaft 7 in FIG. 5,
When the pyramid-shaped punch 17 shown in FIG. As shown in Fig. 6, a crack 15 is formed in the end portion 14 and it is cut into a petal shape.
この様に絶縁基板1への貫通孔13を非円形状
にすることによつて、円形状の中空支軸7を非円
形状の中空支軸7へとその形状が成形加工され、
これによつて角16が形成されるために、仮に摺
動子6へ回転運動を与えても中空支軸7の角16
によつて回転運動は阻止され回転することはな
く、これによつて絶縁基板1を削ることはない。 By making the through hole 13 into the insulating substrate 1 non-circular in this way, the circular hollow support shaft 7 can be shaped into a non-circular hollow support shaft 7.
Since the corner 16 is formed by this, even if rotational movement is applied to the slider 6, the corner 16 of the hollow support shaft 7
This prevents the rotational movement from rotating, thereby preventing the insulating substrate 1 from being scraped.
本考案は絶縁基板の貫通孔を非円形状に穿設
し、中空支軸を非円形状の貫通孔にそつて変形さ
せることによつて、中空支軸の回転運動は防止さ
れ絶縁基板を削ることもなくなる。 In the present invention, by drilling a non-circular through hole in the insulating substrate and deforming the hollow support shaft along the non-circular through hole, rotational movement of the hollow support shaft is prevented and the insulating substrate is scraped. There will be no more.
第1図は半固定可変抵抗器の側断面図、第2図
は第1図の絶縁基板上の平面図、第3図及び第4
図は従来の構造を示し、第3図は貫通孔と中空支
軸の配置を示す断面図、第4図は絶縁基板の裏側
における中空支軸のめの様子を示す図、第5図
及び第6図は本考案の取付構造を説明する図で、
第5図は非円形状の貫通孔と中空支軸の配置を示
す断面図、第6図は絶縁基板の裏側における中空
支軸のめの様子を示す図、第7図A,Bは本考
案のめに用いた角錐状ポンチの側面図及び上面
図である。
1……絶縁基板、3……抵抗皮膜、6……摺動
子、7……中空支軸、13……非円形状の貫通
孔。
Figure 1 is a side sectional view of the semi-fixed variable resistor, Figure 2 is a plan view on the insulating substrate of Figure 1, Figures 3 and 4.
The figures show the conventional structure, Fig. 3 is a sectional view showing the arrangement of the through hole and the hollow support shaft, Fig. 4 is a view showing the appearance of the hollow support shaft on the back side of the insulating substrate, and Figs. Figure 6 is a diagram explaining the mounting structure of the present invention.
Fig. 5 is a cross-sectional view showing the arrangement of the non-circular through hole and the hollow support shaft, Fig. 6 is a view showing the arrangement of the hollow support shaft on the back side of the insulating substrate, and Fig. 7 A and B are the views of the present invention. It is a side view and a top view of the pyramid-shaped punch used for the punch. DESCRIPTION OF SYMBOLS 1... Insulating substrate, 3... Resistance film, 6... Slider, 7... Hollow support shaft, 13... Non-circular through hole.
Claims (1)
し、この中空支軸に回転運動を行う摺動子を取り
付け、この摺動子と絶縁基板上に形成された抵抗
皮膜が接触して抵抗値を可変にするものにおい
て、前記絶縁基板の貫通孔を非円形状に穿設し、
中空支軸を非円形状の貫通孔にそつて変形させて
中空支軸と絶縁基板とを係合したことを特徴とす
る半固定可変抵抗器。 A through hole is drilled in the insulating substrate, a hollow support shaft is inserted through the hole, a slider that performs rotational movement is attached to the hollow support shaft, and the resistance film formed on the insulating substrate comes into contact with the slider. In the device that makes the resistance value variable, the through hole of the insulating substrate is formed in a non-circular shape,
A semi-fixed variable resistor characterized in that the hollow support shaft is deformed along a non-circular through hole to engage the hollow support shaft and an insulating substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8950382U JPS58191605U (en) | 1982-06-17 | 1982-06-17 | semi-fixed variable resistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8950382U JPS58191605U (en) | 1982-06-17 | 1982-06-17 | semi-fixed variable resistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58191605U JPS58191605U (en) | 1983-12-20 |
JPS6244493Y2 true JPS6244493Y2 (en) | 1987-11-25 |
Family
ID=30098111
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8950382U Granted JPS58191605U (en) | 1982-06-17 | 1982-06-17 | semi-fixed variable resistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58191605U (en) |
-
1982
- 1982-06-17 JP JP8950382U patent/JPS58191605U/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS58191605U (en) | 1983-12-20 |
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