JPS62195833A - Cathode-ray tube - Google Patents
Cathode-ray tubeInfo
- Publication number
- JPS62195833A JPS62195833A JP3737886A JP3737886A JPS62195833A JP S62195833 A JPS62195833 A JP S62195833A JP 3737886 A JP3737886 A JP 3737886A JP 3737886 A JP3737886 A JP 3737886A JP S62195833 A JPS62195833 A JP S62195833A
- Authority
- JP
- Japan
- Prior art keywords
- grid
- electric field
- ceramic layer
- ray tube
- electron gun
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 claims abstract description 24
- 239000000919 ceramic Substances 0.000 claims abstract description 22
- 230000005684 electric field Effects 0.000 claims abstract description 14
- 239000011247 coating layer Substances 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 150000002902 organometallic compounds Chemical class 0.000 claims description 3
- 150000004703 alkoxides Chemical class 0.000 claims description 2
- 239000002245 particle Substances 0.000 abstract description 10
- 238000010894 electron beam technology Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 239000012141 concentrate Substances 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 230000003313 weakening effect Effects 0.000 abstract 1
- 239000000356 contaminant Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000002772 conduction electron Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- -1 AQ2(1 Chemical class 0.000 description 1
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は耐電圧特性の優れた電子銃分備えた陰極線管に
関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a cathode ray tube equipped with an electron gun having excellent withstand voltage characteristics.
カラー受像管などの陰極線管の電子銃は陰極、制御電極
及び加速電極からなる低電圧部と、高電圧が印加される
最終加速電極により構成されるがこれらの電極りに突起
が存在していたり汚染微粒子が付着しているとその部分
で電界放出をおこし、不要な電子が放射される。これら
の電子は、蛍光面一にに到達し不要発光によるコントラ
ス１〜の低下をまねく場合があるだけではなく電極間ｙ
はネック内壁、電極間のスパークを引き起こす原因とな
これらの現象は製造］−程のクリーニング化を徹底し電
子銃部品などの高品質化を図れば、ある程度までは防止
することができるが、実際ｌ・皆無とすることは難しく
＋１つ経費的にも実用的でない。The electron gun of a cathode ray tube such as a color picture tube consists of a low voltage section consisting of a cathode, a control electrode, and an accelerating electrode, and a final accelerating electrode to which a high voltage is applied. When contaminant particles are attached, a field is emitted in that area, and unnecessary electrons are emitted. These electrons not only reach the phosphor screen and cause a drop in contrast due to unnecessary light emission, but also cause the difference between the electrodes.
These phenomena can be prevented to a certain extent by thorough cleaning and improving the quality of electron gun parts. l.It is difficult to completely eliminate it, and it is also impractical in terms of cost.
このため、陰極線管の製造］−程では、耐電圧処理をす
ることにより電界放出の要因となるＶＭ、極表面１−の
突起及び汚染微粒子の除去を行なっている。For this reason, in the manufacturing process of cathode ray tubes, VM, protrusions on the electrode surface 1-, and contaminating particles that cause field emission are removed by voltage resistance treatment.
しかし、耐電圧処理では低電圧部の電極間の処理を十分
に行なうことができない。又耐電圧処理後の］−程にお
いて汚染微粒子が再び付着してしまうこともあり、最終
的に耐電圧特性の良好な陰極線管を得るのは困雛である
。However, withstand voltage treatment cannot sufficiently treat the gaps between the electrodes in the low voltage section. In addition, contaminant particles may re-adhere during the [-] step after voltage resistance treatment, making it difficult to obtain a cathode ray tube with good voltage resistance characteristics.
本発明の目的は前記耐電圧処理を施すことにより汚染微
粒子が付着しても電界放電しにくく、さらに仮に電界放
電が生じても被覆層の抵抗により、電界放出電流を低減
させることが可能な電子銃を備えた陰極線管髪提供する
ことにある。The object of the present invention is to apply the withstand voltage treatment to prevent electric field discharge even if contaminant particles adhere to it, and furthermore, even if electric field discharge occurs, it is possible to reduce the field emission current due to the resistance of the coating layer. The gun is equipped with a cathode ray tube to provide hair.
〔発明の概要〕
本発明は卜述した点に鑑み少なくとも陰極及び複数個の
電極をもつ電子銃を備λた陰極線管において、複数の電
極のうち少なくとも１個以上の電極の表面の一部あるい
は全部分に被覆層差形成することにより、電界集中を生
じに＜ ＜ １． ＋ｔつ財界放出電流髪低減するもの
である。[Summary of the Invention] In view of the above-mentioned points, the present invention provides a cathode ray tube equipped with at least a cathode and an electron gun having a plurality of electrodes. By forming different coating layers on all parts, electric field concentration occurs.<<1. This will reduce the amount of current released into the financial world by +t.
〔発明の実施例１
以下図面を参照しつつ本発明髪特開昭５１１−７２６６
７号・公報に示される陰極線管用電子銃に適；１１シた
実施例について勝１明する。第１図は本発明の第１の実
施例を示す、陰極線管用電子銃の概略断面図である。第
１図において電子銃（１）はヒータ■で加熱されること
によって蛍光体層什射突する電子ビームを発生する陰極
Ｃ，３）と、この陰極（賜に対向し順次配置された第１
グリツド０）、第２グリツド０、第：３グリツド０、第
４グリツド■、第５グリツド（８）及びコンバーゼンス
電極Ｏ）の電極で構成される。[Embodiment 1 of the Invention With reference to the drawings, the hair of the present invention is disclosed in Japanese Patent Publication No. 511-7266.
An 11th embodiment suitable for a cathode ray tube electron gun shown in Publication No. 7 will be described below. FIG. 1 is a schematic sectional view of an electron gun for a cathode ray tube, showing a first embodiment of the present invention. In Fig. 1, the electron gun (1) has a cathode (C, 3) that generates an electron beam that impinges on the phosphor layer by being heated by a heater (2), and a first
It consists of electrodes of grid 0), second grid 0, third grid 0, fourth grid (2), fifth grid (8), and convergence electrode (O).
ここで前記第２グリツド０及び第５グリツド（８）の電
極表面には５ｉ（１，を主成分とするセラミック層（＋
（＋ ）が形成されている。Here, the electrode surfaces of the second grid 0 and the fifth grid (8) are covered with ceramic layers (+
(+) is formed.
記第２グリッド０及び第５グリツド（８）をき浸し。Immerse the second grid 0 and the fifth grid (8).
ｊ − 乾燥後７００℃で焼成することによって得られる。 j − It is obtained by baking at 700°C after drying.
この時のセラミック層の厚さは約０．１μｍであった通
常、各電極には、第１グリツド０）でＯＶ第２グリッド
０及び第４グリツド■に６００ｖ〜７００Ｖ、第３グリ
ツド（へ）及び第５グリツド（８）に７０００Ｖ〜８０
００Ｖ、コンバーゼンス電極０）で２５ＫＶ程度の電圧
が印加されるが、特に問題となるのは、第２グリツド０
、第３グリッド０間と、第５グリツドＣ０、コンバーゼ
ンス電極（９）間の電位差が大きいことによる第２グリ
ツド０及び第５グリツド（８）からの電界放出である。The thickness of the ceramic layer at this time was about 0.1 μm.Usually, each electrode has 600V to 700V on the first grid (0), 600V to 700V on the second grid (0), and 600V to 700V on the third grid (to). and 7000V to 80 to the fifth grid (8)
00V, a voltage of about 25KV is applied at the convergence electrode 0), but what is particularly problematic is the convergence electrode 0).
, field emission from the second grid 0 and the fifth grid (8) due to the large potential difference between the third grid 0 and the fifth grid C0 and the convergence electrode (9).
ここで第２グリツド０に０■、コンバーゼンス電極に３
０にＶ電圧を印加し、第３グリツド０に徐々に電圧を印
加していくと、第３グリツド０に印加した電圧がある値
を越えた場合に第２グリツド０から重塁放出により電子
が放射され蛍光面に衝突し不要発光を発生する。この不
要発光を防止するためのセラミック層は電子銃部品の表
面」二の突起及び汚染及び汚染微粒子をセラミック層内
部に埋没させてしまうか又は、突起及び汚染微粒子の鋭
利な尖端部をセラミック層により鈍化させて＝４−
しまうことによって電界集中を生じに＜＜シ、電界放出
機会を低減させている。さらに金属よりも大幅に導電性
の小さいセラミック層を電子銃電極表面上に形成すると
、セラミック層中の伝導電子の量が金属に比べ大幅に小
さく電界放出表面への電荷移動速度の限界に達しやすく
なるために電界放出電流を小さくすることが可能となる
。Here, 0■ is placed on the second grid 0, and 3 is placed on the convergence electrode.
When a voltage of V is applied to grid 0 and the voltage is gradually applied to the third grid 0, when the voltage applied to the third grid 0 exceeds a certain value, electrons are emitted from the second grid 0 by double base emission. It is emitted and collides with the fluorescent screen, generating unnecessary light emission. The ceramic layer for preventing this unnecessary light emission may bury the protrusions and contamination particles on the surface of the electron gun parts inside the ceramic layer, or the sharp points of the protrusions and contamination particles may be buried in the ceramic layer. By slowing it down, electric field concentration occurs and opportunities for field emission are reduced. Furthermore, if a ceramic layer with much lower conductivity than metal is formed on the surface of the electron gun electrode, the amount of conduction electrons in the ceramic layer will be much smaller than that of metal, making it easier to reach the limit of the charge transfer speed to the field emission surface. Therefore, it becomes possible to reduce the field emission current.
ここで不要発光発生電圧を本実施例による陰極線管の電
子銃と通常品で比較すると通常品の第３グリッド不要発
光発生電圧がｌ０ＫＶ〜ＩＩＫＶであったのに比べ本発
明品では同じ＜１５にＶ−１７ＫＶであり数ＫＶの耐電
圧特性の改善が認められた。又第５グリツド（８）にＯ
■の電圧を印加し、コンバーゼンス電極０）に徐々に電
圧を印加したときに第５グリツド（ハ）からの電界放出
による不要発光発生電圧を比較した場合、通常品の第５
グリッド不要発光発生電圧が３０ＫＶ〜３３ＫＶであっ
たのに比べ本発明品では同じ＜３５に■〜４０ＫＶであ
り数ＫＶの耐電圧特性の改善が詔められた。さらに耐電
圧処理工程における放電回数は通常品の約２／３に減少
した。Here, when comparing the unnecessary emission generation voltage between the electron gun of the cathode ray tube according to this embodiment and the conventional product, the third grid unnecessary emission generation voltage of the conventional product was 10KV to IIKV, while in the present invention product it was the same <15. V-17 KV, and an improvement of several KV in withstand voltage characteristics was observed. Also, O on the 5th grid (8)
When applying the voltage (2) and gradually applying the voltage to the convergence electrode 0), the voltage at which unnecessary light emission occurs due to field emission from the fifth grid (c) is compared.
While the grid-free light emission generation voltage was 30 KV to 33 KV, the product of the present invention had a voltage of <35 - 40 KV, suggesting an improvement in voltage resistance characteristics of several KV. Furthermore, the number of discharges during the voltage resistance treatment step was reduced to about 2/3 of that of conventional products.
尚、この実施例に適用したセラミック層の厚さは実験に
よれば（１、Ｏｌ ）ｚｍ〜２０１−＋ｍの範囲で好ま
しくは［＋、（’＋５７＋ｍ −１０７１１１１の範囲
が有効であり、０ 、 （ｌ ］ ７Ｊｍ以Ｆでは放電
制御効果が顕著ではなくゾ１．２０７１１１１を越える
と電界に異常をきたしフォーカス特性佇劣化させる。According to experiments, the thickness of the ceramic layer applied to this example is in the range of (1,Ol)zm to 201-+m, preferably in the range of [+,('+57+m-1071111), and 0, (l) Below 7 Jm, the discharge control effect is not remarkable, and when it exceeds 1.2071111, the electric field becomes abnormal and the focus characteristic deteriorates.
次に第２の実施例を説明する。Next, a second embodiment will be explained.
ｉｎ記第１の実施例のシリコンを主成分とするアルキシ
ド液に代えて、ＳｉＯ□の有機金属化合物液を用いて、
第２グリツド０及び第５クリツトσ３）を含浸し、５０
（１”Ｃの焼成によってセラミック層（厚さ約１ｐｍ
）を形成し前記不要発光発生電圧を比較したところ前記
実施例と同様の効果を得た。さら［こエミッションライ
フの向］−がＲ忍ぬられた。Using an organometallic compound liquid of SiO□ instead of the aloxide liquid containing silicon as the main component in the first example,
Impregnate the second grid 0 and the fifth grid σ3), and
(The ceramic layer (approximately 1 pm thick) is created by firing 1"C.
) was formed and the unnecessary light emission generation voltage was compared, and the same effect as in the above embodiment was obtained. Sara [Ko Emission Life no Mukai] - was stolen by R.
前記両実施例は、５ｉ０２をベースとしたアルコキシド
又は有機金属化合物液を用いたが、ＳＨＥ、以外に他の
金属酸化物、例えばＡ Ｑ ２（１，、Ｔｉｎ７． Ｚ
ｒ（ｌｚ ｒＴａ、０． 、Ｆｅ２（１，、ＮｉＯ，Ｚ
ｒ（１，ＣｏＯ，５ｎ０２．Ｔｎ２Ｄ、 、Ｃ（１０３
，ＭｇＯ。Both of the above examples used an alkoxide or organometallic compound liquid based on 5i02, but in addition to SHE, other metal oxides such as AQ2(1, Tin7.Z) were used.
r(lz rTa, 0., Fe2(1,, NiO, Z
r(1,CoO,5n02.Tn2D, ,C(103
, MgO.
Ｙ２０Ｊ、ｎａＯ，ＲａＴ−ｉ０３．Ｂａｌ、ａ、０４
．Ｓｉｎなど登用いてもよく又、これらの２種以上の混
合物を用いても本発明の効果は、認められる。Y20J, naO, RaT-i03. Bal, a, 04
．． The effect of the present invention can be recognized even if a mixture of two or more of these materials is used.
又塗布の方法は、浸漬、スプレー、スクリーン印刷、は
け塗り等いずれも用いることかできる。Further, the coating method may be dipping, spraying, screen printing, brushing or the like.
１−記以外、いねり〕るスパッタリングｄ（や、Ｃν１
〕法によって得られるセラミック層であっても本発明の
効果が得られるのはトｉうまでもない。Except for 1-, sputtering d (or Cν1
It goes without saying that the effects of the present invention can be obtained even with a ceramic layer obtained by the above method.
本発明によれは、陰極Ｖ＆管の電子銃電極表面の突起及
び汚染微粒子を被覆層内部に埋没させてしまうか又は鈍
化させてしまうことによって電界集中を生じに＜＜シ、
電界放電を低減することができ、耐電圧処理の対象物と
なる突起及び汚染微粒子の絶対数も減少させることが可
能となり耐電圧処理ｍ工程も容易となる。又金属よｊｌ
も大幅に導電性の小さい被覆層を陰極線管の電子銃１ｆ
ｔ極の表面に形成すると被覆層の抵抗により被覆層中の
伝導電子の敏が導電体である金属に比べ大幅に小さく電
界放出表面への電荷移動速度の限界に到達しやすくなる
たるに電界放出電流が小さくなる。According to the present invention, protrusions and contaminant particles on the surface of the electron gun electrode of the cathode V& tube are buried or blunted within the coating layer, thereby causing electric field concentration.
Electric field discharge can be reduced, and the absolute number of protrusions and contaminant particles that are objects of withstand voltage treatment can also be reduced, making the withstand voltage treatment step m easier. Metal again
Also, the coating layer with significantly lower conductivity is applied to the electron gun 1f of the cathode ray tube.
When formed on the surface of the t-electrode, due to the resistance of the coating layer, the conduction electron density in the coating layer is much smaller than that of metal, which is a conductor, and it is easier to reach the limit of the charge transfer speed to the field emission surface. becomes smaller.
又、エミッションライフの向−１−も認められる。In addition, the emission life direction -1- is also recognized.
４．１ソ１面の簡貼な説明
第１図は本発明の一実施例を示す陰極線管の電子銃の概
略断面図である。4.1 Brief Explanation of Section 1 FIG. 1 is a schematic cross-sectional view of a cathode ray tube electron gun showing one embodiment of the present invention.
（１）・・・電子銃 ０・・・陰極（ハ）・
・・第２グリツＦ （８）・第５グリツド（１０
）・・・セラミック層
代理人 弁理士 則 近 憲 佑
同 大胡典夫
〆Ｄ
第１図(1)...Electron gun 0...Cathode (c)
・・Second grid F (8)・Fifth grid (10)
)... Ceramic layer agent Patent attorney Nori Chika Yudo Norio Ogo〆D Figure 1
Claims (1)
備えた陰極線管において、前記複数の電極のうち少なく
とも１個以上の電極の表面の少なくとも一部に電界放電
を抑制する被覆層を設けることを特徴とする陰極線管。 ２）前記被覆層をセラミック層とすることを特徴とする
特許請求の範囲第１項記載の陰極線管。 ３）前記セラミック層が、少なくとも１種類の金属から
なる金属アルコキシドから得られるセラミック層である
ことを特徴とする特許請求の範囲第１項及び第２項記載
の陰極線管。 ４）前記セラミック層が少なくとも１種類の金属からな
る有機金属化合物から得られるセラミック層であること
を特徴とする特許請求の範囲第１項乃至第３項記載の陰
極線管。 ５）前記セラミック層の厚さを０．０１μｍ以上２０μ
ｍ以下とすることを特徴とする特許請求の範囲第１項乃
至第４項記載の陰極線管。[Scope of Claims] 1) In a cathode ray tube equipped with an electron gun having at least a cathode and a plurality of electrodes, electric field discharge is suppressed on at least a portion of the surface of at least one of the plurality of electrodes. A cathode ray tube characterized by being provided with a coating layer. 2) The cathode ray tube according to claim 1, wherein the coating layer is a ceramic layer. 3) The cathode ray tube according to claims 1 and 2, wherein the ceramic layer is a ceramic layer obtained from a metal alkoxide made of at least one type of metal. 4) The cathode ray tube according to any one of claims 1 to 3, wherein the ceramic layer is a ceramic layer obtained from an organometallic compound comprising at least one type of metal. 5) The thickness of the ceramic layer is 0.01 μm or more and 20 μm.
5. The cathode ray tube according to claim 1, wherein the cathode ray tube is less than or equal to m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3737886A JPS62195833A (en) | 1986-02-24 | 1986-02-24 | Cathode-ray tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3737886A JPS62195833A (en) | 1986-02-24 | 1986-02-24 | Cathode-ray tube |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62195833A true JPS62195833A (en) | 1987-08-28 |
Family
ID=12495857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3737886A Pending JPS62195833A (en) | 1986-02-24 | 1986-02-24 | Cathode-ray tube |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62195833A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5345963A (en) * | 1976-10-06 | 1978-04-25 | Mitsubishi Electric Corp | Cathode-ray tube |
| JPS59213660A (en) * | 1983-05-13 | 1984-12-03 | 鐘淵化学工業株式会社 | Porous ceramic thin film and manufacture |
| JPS60239353A (en) * | 1984-05-14 | 1985-11-28 | 日立化成工業株式会社 | Manufacture of ceramic sintered body |
-
1986
- 1986-02-24 JP JP3737886A patent/JPS62195833A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5345963A (en) * | 1976-10-06 | 1978-04-25 | Mitsubishi Electric Corp | Cathode-ray tube |
| JPS59213660A (en) * | 1983-05-13 | 1984-12-03 | 鐘淵化学工業株式会社 | Porous ceramic thin film and manufacture |
| JPS60239353A (en) * | 1984-05-14 | 1985-11-28 | 日立化成工業株式会社 | Manufacture of ceramic sintered body |
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