JPS62150752A - Resin-sealed electronic parts - Google Patents

Resin-sealed electronic parts

Info

Publication number
JPS62150752A
JPS62150752A JP60290420A JP29042085A JPS62150752A JP S62150752 A JPS62150752 A JP S62150752A JP 60290420 A JP60290420 A JP 60290420A JP 29042085 A JP29042085 A JP 29042085A JP S62150752 A JPS62150752 A JP S62150752A
Authority
JP
Japan
Prior art keywords
water
pps
resin
polyphenylene sulfide
content
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60290420A
Other languages
Japanese (ja)
Other versions
JP2525357B2 (en
Inventor
Hirokazu Kobayashi
裕和 小林
Akihiko Kishimoto
岸本 彰彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toray Industries Inc
Original Assignee
Toray Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Industries Inc filed Critical Toray Industries Inc
Priority to JP60290420A priority Critical patent/JP2525357B2/en
Publication of JPS62150752A publication Critical patent/JPS62150752A/en
Application granted granted Critical
Publication of JP2525357B2 publication Critical patent/JP2525357B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Details Of Resistors (AREA)
  • Coils Or Transformers For Communication (AREA)

Abstract

PURPOSE:To obtain resin molded electronic parts which contain very little water-soluble electrolyte components and are free from problems such as increase of a leakage current and corrosion of the electrode and have high reliability by molding or covering the parts with polyphenylene sulfide resin in which total sodium content and water-soluble chlorine content are specified. CONSTITUTION:Electronic parts are covered or molded with polyphenylene sulfide resin whose total sodium content is less than 800ppm and water-soluble chlorine content is less than 50ppm. The melt biscosity of the polyphenylene sulfide (PPS) is not ristricted if electronic devices can be molded without being damaged. However, for molding devices with bonding wires such as transistors and IC's, it is preferred to employ the resin with lower melt biscosity to avoid damage of the devices. Total sodium content in PPS is preferably less than 500ppm and more preferably less than 300ppm. Water-soluble chlorine content of PPS is preferably less than 10ppm and more preferably less than 5ppm.

Description

【発明の詳細な説明】 〈産業上の利用分野〉 本発明はポリフェニレンスルフィド樹脂で被覆または封
止された樹脂封止電子部品に関し、更に詳しくは、封止
された状態で水溶性の電解質成分含有量の低減されたポ
リフェニレンスルフィド樹脂で被覆または封止された樹
脂封止電子部品に関する。
Detailed Description of the Invention <Field of Industrial Application> The present invention relates to a resin-sealed electronic component coated or sealed with a polyphenylene sulfide resin, and more specifically, a resin-sealed electronic component containing a water-soluble electrolyte component in a sealed state. The present invention relates to resin-encapsulated electronic components coated or encapsulated with a reduced amount of polyphenylene sulfide resin.

〈従来の技術〉 電子部品封止用樹脂として、従来の熱硬化性樹脂に代り
、祠オ61収率、成形速度に特徴を有する熱可塑性樹脂
が注目され、特にポリフェニレンスルフィド樹脂により
電子部品を封止することは、特開昭52−149348
号公報でよく知られている。更に、ポリフェニレンスル
フィド樹脂中に含有される水溶性電解質成分に起因する
電子部品の電極や配線の腐蝕による断線、洩れ電流の増
大等の故障を低減させる目的では、水溶性の電解質成分
含有量が1100pI)以下のポリフェニレンスルフィ
ドを用いて封止された電子部品が特開昭55−1563
42号公報に開示されている。
<Prior art> Thermoplastic resins, which are characterized by high yield and molding speed, are attracting attention as resins for encapsulating electronic components instead of conventional thermosetting resins. To stop is disclosed in Japanese Patent Application Laid-Open No. 52-149348.
It is well known from the publication No. Furthermore, for the purpose of reducing failures such as disconnection due to corrosion of electrodes and wiring of electronic components and increase in leakage current caused by the water-soluble electrolyte component contained in the polyphenylene sulfide resin, the content of the water-soluble electrolyte component is 1100 pI. ) The following electronic components sealed using polyphenylene sulfide were published in Japanese Patent Application Laid-open No. 55-1563.
It is disclosed in Publication No. 42.

〈発明が解決しようとする問題点〉 しかしながら、前記特開昭55−156342号公報で
開示されている技術により、用いるポリフェニレンスル
フィド樹脂の電解質成分含有量を11001)l)以下
に調整しても、充1a月との混合、電子部品の封止成形
時の溶融滞留時に分子鎖末端の分解等が生じ、分子中に
結合された電子部品の状態でのポリフェニレンスルフィ
ド樹脂の水溶性電解質成分含有量、特に水溶性ナトリウ
ム含有量が箸しく増大するという欠点を有している。よ
って、単に、用いるポリフェニレンスルフィド樹脂の水
溶性電解質含有量をiooppm以下としただけでは封
止成形後のポリフェニレンスルフィド樹脂の水溶性電解
質含有量を低減しきれないのである。
<Problems to be Solved by the Invention> However, even if the electrolyte component content of the polyphenylene sulfide resin used is adjusted to 11001)l) or less using the technique disclosed in JP-A-55-156342, The water-soluble electrolyte component content of polyphenylene sulfide resin in the state of electronic components bonded in molecules due to decomposition of the molecular chain ends during melting and retention during sealing molding of electronic components. In particular, it has the disadvantage that the water-soluble sodium content increases considerably. Therefore, simply reducing the water-soluble electrolyte content of the polyphenylene sulfide resin used to below iooppm does not fully reduce the water-soluble electrolyte content of the polyphenylene sulfide resin after sealing molding.

従って、本発明の課題は、封止成形された状態での水溶
性電解質成分含有量が少なく、洩れ電流の増大、電極腐
蝕等の問題のない、信頼性のすぐれたポリフェニレンス
ルフィド樹脂封止電子部品を提供することである。
Therefore, it is an object of the present invention to provide a highly reliable polyphenylene sulfide resin-encapsulated electronic component that has a low content of water-soluble electrolyte components in the encapsulated state and is free from problems such as increased leakage current and electrode corrosion. The goal is to provide the following.

く問題点を解決するための手段〉 すなわち、本発明は樹脂中における全ナトリウム含有量
が8001)pm以下であり、かつ、水溶性塩素含有量
が501)I)m以下であるポリフェニレンスルフィド
樹脂で被覆または封止されたことを特徴とするポリフェ
ニレンスルフィド樹脂封止電子部品を提供するものであ
る。
Means for Solving Problems> That is, the present invention uses a polyphenylene sulfide resin in which the total sodium content in the resin is 8001) pm or less and the water-soluble chlorine content is 501) I)m or less. The present invention provides a polyphenylene sulfide resin-sealed electronic component characterized by being coated or sealed.

本発明で用いるポリフェニレンスルフィド(以下PI−
’Sと略する〉とは、構造式←(ΣS→で示される繰返
し単位を70モル以上、より好ましくは90モル%以上
を含む重合体であり、上記繰返し単位が70モル%未満
では耐熱性が損なわれるため好ましくない。
Polyphenylene sulfide (hereinafter referred to as PI-
'S' refers to a polymer containing 70 mol or more, preferably 90 mol% or more of repeating units represented by the structural formula ←(ΣS→, and if the repeating unit is less than 70 mol%, the heat resistance This is undesirable because it damages the

PPSは一般に、特公昭45−3368号公報で代表さ
れる製造法により得られる比較的分子量の小さい重合体
と特公昭52−12240号公報で代表される製造法に
より得られる本質的に線状で比較的高分子量の重合体等
があり、前記特公昭45−3368号公報記載の方法で
得られた重合体においては、重合後酸素雰囲気下におい
て加熱することにより、あるいは過酸化物等の架橋剤を
添加して加熱することにより高重合度化して用いること
も可能であり、本発明においてはいかなる方法により得
られたPPSを用いることも可能である。
PPS is generally a polymer with a relatively small molecular weight obtained by the production method typified by Japanese Patent Publication No. 45-3368, and an essentially linear polymer obtained by the production method typified by JP Publication No. 52-12240. There are polymers with relatively high molecular weight, and in the case of the polymer obtained by the method described in the above-mentioned Japanese Patent Publication No. 45-3368, it is possible to obtain the polymer by heating in an oxygen atmosphere after polymerization or by adding a crosslinking agent such as peroxide. It is also possible to increase the degree of polymerization and use it by adding and heating it, and in the present invention, it is also possible to use PPS obtained by any method.

また、PPSはその繰返し単位り30モル%未満を下記
の構造式を有する繰返し単位等で構成することが可能で
ある。
Furthermore, less than 30 mol% of the repeating units of PPS can be composed of repeating units having the following structural formula.

本発明で用いられるPPSの溶融粘度は、電子素子を破
損することなく成形することが可能であれば特に制限は
ないが、特にトランジスタ、IC等ポンディングワイヤ
を有する素子を封止する場合は素子の破損を回避するた
め溶融粘度の低いものが好ましく用いられる。
The melt viscosity of PPS used in the present invention is not particularly limited as long as it can be molded without damaging electronic devices, but especially when sealing devices with bonding wires such as transistors and ICs, In order to avoid damage to the resin, those with low melt viscosity are preferably used.

本発明で用いるPPS中の全ナトリウム含有量は800
 Di)m以下でおることが必要でおり、より好ましく
は500 ppm以下、更に好ましくは30o ppm
以下のものが用いられる。全ナトリウム含有量が800
 DI)mを越えると、原料段階での水溶性ナトリウム
含有量が低い値であっても、封止用に必要とされる種々
充填材等との溶融混練、対土成形時の加熱溶融履歴によ
り水溶性ナトリウム含有量が増大するため、封止された
電子部品に局所導電が生じるので好ましくない。
The total sodium content in PPS used in the present invention is 800
Di) m or less, preferably 500 ppm or less, and even more preferably 30 ppm
The following are used: Total sodium content is 800
If it exceeds DI)m, even if the water-soluble sodium content at the raw material stage is low, it will be affected by the heating and melting history during melt-kneading with various fillers, etc. required for sealing, and molding into soil. Since the water-soluble sodium content increases, local conduction occurs in the encapsulated electronic component, which is undesirable.

また、本発明で用いるPPSの水溶性塩素の含有量は、
50ppm以下であることが必要であり、より好ましく
は10ppm以下、特に好ましくは5ppm以下のもの
が用いられる。
In addition, the content of water-soluble chlorine in PPS used in the present invention is
It is necessary that the content is 50 ppm or less, more preferably 10 ppm or less, particularly preferably 5 ppm or less.

水溶性塩素含有量が50ppmを越えると素子の電極等
の腐蝕による故障が生じるので好ましくない。
If the water-soluble chlorine content exceeds 50 ppm, failures due to corrosion of the electrodes, etc. of the device may occur, which is not preferable.

なお、PPSの分子鎖末端等に結合している塩素原子は
加熱溶融履歴等に対して安定でおるため、全塩素含有量
を低減する必要はない。
In addition, since the chlorine atoms bonded to the molecular chain ends of PPS are stable against heating and melting history, there is no need to reduce the total chlorine content.

また、一般に、以下に例示する方法または通常公知の方
法でナトリウム含有量を低減させる際に、水溶性塩素含
有量はより容易に好ましいレベルまで低減される。
Generally, when the sodium content is reduced by the method exemplified below or by a commonly known method, the water-soluble chlorine content is more easily reduced to a preferred level.

本発明における水溶性電解質成分含有量は、100メツ
シユ・パス以下の粒度に粉砕されたPPSを20g/1
00ccの割合で1%の湿潤剤(片山化学(株)製″ト
リトン”X100>を含む脱イオン水に浸漬せしめ、1
20℃で20時間抽出した抽出水中に含まれる該当する
電解質の重量をPPSの重量で除した割合で定義する。
The water-soluble electrolyte component content in the present invention is 20g/1 of PPS pulverized to a particle size of 100 mesh passes or less.
It was immersed in deionized water containing 1% wetting agent ("Triton" X100 manufactured by Katayama Chemical Co., Ltd.) at a ratio of 1.
It is defined as the ratio obtained by dividing the weight of the relevant electrolyte contained in the extracted water extracted at 20°C for 20 hours by the weight of PPS.

本発明で用いるPPSの全ナトリウム含有量および水溶
性塩素含有量を低減する方法には特に制限がなく、熱水
で洗浄する方法、極性溶媒で洗浄する方法、あるいは、
酸、アルカリ土類金属塩水溶液で処理する方法、および
、これらを組合わせた方法を例示し得るが、これらに限
定されるものではない。
There are no particular limitations on the method for reducing the total sodium content and water-soluble chlorine content of PPS used in the present invention, and there may be a method of washing with hot water, a method of washing with a polar solvent, or a method of washing with hot water, a method of washing with a polar solvent, or
Examples include a method of treatment with an acid, an aqueous alkaline earth metal salt solution, and a method of combining these, but the method is not limited to these.

また、本発明で用いられるPPSには、本発明の目的を
10なわない範囲で酸化防止剤、熱安定剤、滑剤、結晶
核剤、紫外線防止剤、銅害防止剤、着色剤、離型剤など
の通常の添加剤を添加することができ、更にPPSの架
橋度を制御する目的で、過酸化剤等の架橋促進剤、また
は特開昭58−202045、特開昭58−20204
6号公報等に記載されているジアルキル錫カルボキシレ
ート、アミノトリアゾール等の架橋防止剤を配合するこ
とも可能である。
In addition, the PPS used in the present invention may include antioxidants, heat stabilizers, lubricants, crystal nucleating agents, ultraviolet inhibitors, copper damage inhibitors, coloring agents, and mold release agents, to the extent that they do not defeat the purpose of the present invention. In addition, for the purpose of controlling the degree of crosslinking of PPS, crosslinking accelerators such as peroxidants, or JP-A-58-202045, JP-A-58-20204 can be added.
It is also possible to incorporate crosslinking inhibitors such as dialkyltin carboxylates and aminotriazoles described in Publication No. 6 and the like.

更に本発明で用いられるPPSには、封止された電子部
品の寸法安定性、機械特性あるいは熱伝導性等の改善の
目的で、溶融シリカ、結品性シリカ、J土酸カルシウム
、硫酸カルシウム、タルク、ガラス繊維、ガラスピーズ
等の無機充填剤を配合することが好ましく、これら充填
剤中の水溶性電解質成分含有量も小さいことが望ましい
。これら充填剤は2種以上を併用することも可能であり
、必要によりシラン系およびチタン系のカップリング剤
で予備処理して使用することができる。また、これらカ
ップリング剤は封止樹脂と電子素子との密着性を改善す
る目的で、PPSに直接配合することも可能である。
Furthermore, the PPS used in the present invention includes fused silica, concreting silica, calcium chloride, calcium sulfate, It is preferable to incorporate inorganic fillers such as talc, glass fiber, glass peas, etc., and it is desirable that the content of water-soluble electrolyte components in these fillers is also small. Two or more of these fillers can be used in combination, and if necessary, they can be pretreated with a silane-based and titanium-based coupling agent before use. Moreover, these coupling agents can also be directly blended into PPS for the purpose of improving the adhesion between the sealing resin and the electronic device.

本発明の電子部品は、通常電子部品の概念で考えられる
ものであれば特に制限はないが、例えば、コンデンサー
、抵抗器、集積回路(IC)、トランジスター、ダイオ
ード、トライオード、サイリスター、コイル、バリスタ
ー、コネクター、変換器、マイクロスイッチなどおよび
これらの複合部品が挙げられる。
The electronic component of the present invention is not particularly limited as long as it can be considered as an ordinary electronic component, but examples include a capacitor, a resistor, an integrated circuit (IC), a transistor, a diode, a triode, a thyristor, a coil, and a varistor. , connectors, converters, microswitches, etc., and composite parts thereof.

本発明におけるPPSによる被覆または封止方法にも特
に制限はなく、金型中に電子素子を固定しておき射出成
形あるいはトランスファー成形で成形する方法、あるい
はあらかじめフィルム状に成形しであるPPSを用いて
、加熱、加圧下に封包する方法等が挙げられる。
There are no particular limitations on the method of covering or sealing with PPS in the present invention, and there are methods in which electronic elements are fixed in a mold and then molded by injection molding or transfer molding, or PPS that has been previously molded into a film is used. Examples include a method of packaging under heating and pressure.

更に、本発明の樹脂封止成形品は、成形後過酸化水素水
等の過酸化物で処理すること、あるいはPPSの融点以
下の温度で熱処理することにより、架橋度または結晶化
度を増大させ、機械特性等を改善することが可能である
Furthermore, the resin-sealed molded product of the present invention can be treated with a peroxide such as a hydrogen peroxide solution after molding, or heat-treated at a temperature below the melting point of PPS to increase the degree of crosslinking or crystallinity. , mechanical properties, etc. can be improved.

以下に実施例を挙げて本発明を更に詳細に説明する。The present invention will be explained in more detail with reference to Examples below.

〈実施例〉 参考例1  (PPSの重合) オートクレーブに30%水硫化ナトリウム水溶液9.3
4にび(水硫化ナトリウム50モル)、50%水酸化ナ
トリウム4.00Kg(水酸化ナトリウム50モル)お
よびN−メチル−2−ピロリドン(以下NMPと略称す
る>16KFlを仕込み、攪拌しながら徐々に205°
Cまで昇温し、水7.9Kgを含む留出水8.21を除
去した。残留混合物に1,4−ジクロルベンゼン7.5
ONy(51゜0モル)およびN M P 4 Kgを
加え、230’Cで2時間、ざらに260℃で1時間加
熱した。
<Example> Reference Example 1 (Polymerization of PPS) 30% sodium bisulfide aqueous solution 9.3 in an autoclave
4.00 kg of 50% sodium hydroxide (50 moles of sodium hydroxide) and N-methyl-2-pyrrolidone (hereinafter abbreviated as NMP)>16KFl were added, and gradually mixed with stirring. 205°
The temperature was raised to C, and 8.21 kg of distilled water containing 7.9 kg of water was removed. 1,4-dichlorobenzene 7.5% in the residual mixture
ONy (51°0 mol) and N M P 4 Kg were added and heated at 230°C for 2 hours and roughly at 260°C for 1 hour.

反応生成物を、水で2回、70℃の温水で5回洗浄し、
湿潤状態のまま以下の実施例に使用した。
The reaction product was washed twice with water and five times with warm water at 70°C,
It was used in the following examples in a wet state.

なお、得られたPPSの量は乾燥状態で約5Kgに相当
し、一部を120°Cで24時間減圧乾燥して得た粉末
について測定した溶融粘度は、40ポアズ(320’C
1剪断速度1000秒−1)であった。また、同様に乾
燥したPPS粉末について測定したナトリウム含有量は
900 ppmであり、水溶性ナトリウム、塩素の量は
、それぞれ235ppm、32”IDI)mであった。
The amount of PPS obtained is equivalent to approximately 5 kg in dry state, and the melt viscosity measured for the powder obtained by drying a portion under reduced pressure at 120°C for 24 hours is 40 poise (320°C).
1 shear rate 1000 seconds-1). Further, the sodium content measured for similarly dried PPS powder was 900 ppm, and the amounts of water-soluble sodium and chlorine were 235 ppm and 32''IDI)m, respectively.

実施例1 参考例1で得られた湿潤状態のPPS約I K3(約5
0%の水を含む)と脱イオン水5〃とをオートクレーブ
に仕込み、常圧で密閉したのち、攪拌しつつ150’C
に昇温し、約30分間保持したのち冷却した。オート・
クレープから内容物を取り出し濾過し、更に濾液のpH
が7となるまで室温の脱イオン水で洗浄したのち120
’Cで24時間減圧乾燥して粉末状とした。
Example 1 The wet PPS obtained in Reference Example 1 was approximately IK3 (approximately 5
0% water) and deionized water 5 were placed in an autoclave, sealed at normal pressure, and heated to 150'C with stirring.
The temperature was raised to , held for about 30 minutes, and then cooled. Auto
The contents are removed from the crepe and filtered, and the pH of the filtrate is
120 after washing with deionized water at room temperature until the
It was dried under reduced pressure at 'C for 24 hours to form a powder.

この粉末状のPPSについて測定した仝す]・リウム含
′Pimおよび水溶性す1〜リウム、塩素含有量は第1
表に記載のとおりであった。
The lithium-containing PPS and water-soluble lithium and chlorine contents were measured on this powdered PPS.
It was as described in the table.

引続き、この洗浄後のPPSと溶融シリカ(東芝セラミ
ックス(株)%GR−80>とガラス繊維(日本電気硝
子(株)製TN101)とを35対50対15の重量比
でドライ・ブレンドし、310’Cに設定しである30
mφの2軸スクリユ一押出機に供給し、溶融混練したの
ち、ペレット化した。
Subsequently, this washed PPS, fused silica (Toshiba Ceramics Co., Ltd. %GR-80) and glass fiber (Nippon Electric Glass Co., Ltd. TN101) were dry blended at a weight ratio of 35:50:15. Set to 310'C is 30
The mixture was fed to a mφ twin-screw extruder, melted and kneaded, and then pelletized.

次にこのペレットを320’Cに設定したスクリューイ
ンライン型射出成形機に供給し、リード線を取りつけた
P型MOSトランジスタ素子(ソース・ドレイン間最大
定格電圧20V、しきい値電圧3.5V)をインサーl
〜し、200〜210’Cの温度に設定しである金型を
用い、射出圧力30〜50に3/CIiで封止成形を行
った。
Next, this pellet was supplied to a screw in-line injection molding machine set at 320'C, and a P-type MOS transistor element (maximum rated voltage between source and drain of 20V, threshold voltage 3.5V) with lead wires was attached. inserter l
Sealing molding was performed at an injection pressure of 30 to 50 and 3/CIi using a mold set at a temperature of 200 to 210'C.

得られたPPS封止トランジスタを121°C12気圧
の加圧水蒸気中に100時間保持した浚、(以下PCT
後と略する)ソース・ドレイン間に12Vの電圧を印加
してリーク電流を測定したところ第1表に記載の結果が
得られた。
The obtained PPS sealed transistor was kept in pressurized steam at 121°C and 12 atm for 100 hours (hereinafter referred to as PCT).
When a voltage of 12 V was applied between the source and drain and the leakage current was measured, the results shown in Table 1 were obtained.

また、同様に成形した別のトランジスタの樹脂部分を粉
砕し、測定した水溶性す1〜リウム、塩素含有量は第1
表記載の通りでめった。
In addition, the resin part of another transistor molded in the same manner was crushed, and the water-soluble sodium and chlorine contents were measured as follows.
It was exactly as stated in the table.

実施例2 実施例1で洗浄温度を150’Cとした代りに、洗浄温
度を180’Cとしたことのほかは、実施例1と全く同
様の方法でPPS封止トランジスタを得た。評価結果は
第1表に記載の通りであった。
Example 2 A PPS sealed transistor was obtained in exactly the same manner as in Example 1, except that the cleaning temperature was changed to 180'C instead of 150'C in Example 1. The evaluation results were as shown in Table 1.

実施例3 実施例2で、180’Cでの洗浄を2回繰り返したこと
のほかは、実施例2と全く同様の方法で、成形、評価を
行った。評価結果は第1表に記載の通りであった。
Example 3 Molding and evaluation were carried out in exactly the same manner as in Example 2, except that the washing at 180'C was repeated twice. The evaluation results were as shown in Table 1.

実施例4 実施例3で、180’Cで2回洗浄を行う前に、70’
Cの温度に加温されたpH2の酢酸水溶液にPPSを3
0分間浸漬し、攪拌しつつ保持したのち、濾過し、濾液
がpH7になるまで室温の脱イオン水で洗浄する操作を
追加した以外は実施例3と全く同様の方法で成形評価を
行った。評価結果は第1表に記載の通りであった。
Example 4 In Example 3, before washing twice at 180'C,
PPS was added to a pH 2 aqueous acetic acid solution heated to a temperature of C.
Molding evaluation was performed in exactly the same manner as in Example 3, except that the sample was immersed for 0 minutes, held while stirring, filtered, and washed with room temperature deionized water until the filtrate reached pH 7. The evaluation results were as shown in Table 1.

比較例1 実施例1で洗浄温度を150’Cとした代りに、洗浄温
度を120’Cとしたことのほかは、実施例1と全く同
様の方法で、成形、評価を行った。評価結果は第1表に
記載の通りであった。
Comparative Example 1 Molding and evaluation were carried out in exactly the same manner as in Example 1, except that the cleaning temperature was changed to 120'C instead of 150'C in Example 1. The evaluation results were as shown in Table 1.

比較例1の結果は、封止前の水溶性ナトリウムおよび塩
素含有用が合計1100pp以下のPPSを使用した場
合でも、封止後の水溶性ナトリウム含有量が特に増加し
、PCT後のリーク電流は極めて大ぎいことを示してい
る。
The results of Comparative Example 1 show that even when using PPS with a total of 1100 pp or less of water-soluble sodium and chlorine before sealing, the water-soluble sodium content after sealing particularly increases, and the leakage current after PCT decreases. It shows that it is extremely large.

それに対して、実施例は、さらに、全ナトリウム含有間
が少ないPPSを使用して、封止後の水溶性ナトリウム
含有量が増加することを防ぐことにより、PCT後のリ
ーク電流が極めて小さくなることを示している。
On the other hand, in the example, the leakage current after PCT becomes extremely small by using PPS with a low total sodium content to prevent the water-soluble sodium content from increasing after sealing. It shows.

〈発明の効果〉 本発明により、樹脂中の水溶性の電解質含有成分量が極
めて少なく、耐湿性に代表される信頼性が極めてすぐれ
たポリフェニレンスルフィド樹脂封止電子部品が得られ
るようになった。
<Effects of the Invention> According to the present invention, it has become possible to obtain a polyphenylene sulfide resin-encapsulated electronic component which has an extremely low amount of water-soluble electrolyte-containing components in the resin and has extremely excellent reliability represented by moisture resistance.

Claims (1)

【特許請求の範囲】[Claims]  樹脂中における全ナトリウム含有量が800ppm以
下であり、かつ、水溶性塩素含有量が50ppm以下で
あるポリフェニレンスルフィド樹脂で被覆または封止さ
れたことを特徴とするポリフェニレンスルフィド樹脂封
止電子部品。
A polyphenylene sulfide resin-sealed electronic component characterized by being coated or sealed with a polyphenylene sulfide resin in which the total sodium content in the resin is 800 ppm or less and the water-soluble chlorine content is 50 ppm or less.
JP60290420A 1985-12-25 1985-12-25 Resin-sealed electronic components Expired - Lifetime JP2525357B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60290420A JP2525357B2 (en) 1985-12-25 1985-12-25 Resin-sealed electronic components

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60290420A JP2525357B2 (en) 1985-12-25 1985-12-25 Resin-sealed electronic components

Publications (2)

Publication Number Publication Date
JPS62150752A true JPS62150752A (en) 1987-07-04
JP2525357B2 JP2525357B2 (en) 1996-08-21

Family

ID=17755796

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP2525357B2 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62241961A (en) * 1986-04-14 1987-10-22 Tosoh Corp Polyphenylene sulfide composition
JPH0245560A (en) * 1988-08-04 1990-02-15 Toray Ind Inc Composition for sealing electronic part and resin-sealed electronic part
JPH0649356A (en) * 1992-11-30 1994-02-22 Toray Ind Inc Polyphenylene sulfide resin composition
JPH08157719A (en) * 1994-12-09 1996-06-18 Idemitsu Petrochem Co Ltd Polyarylene sulfide resin composition
EP1289133A1 (en) * 2001-01-30 2003-03-05 Matsushita Electric Industrial Co., Ltd. Saw device and method for manufacture thereof
JP2003096298A (en) * 2001-09-25 2003-04-03 Toray Ind Inc Polyphenylene sulfide resin composition and condenser part
JP2007284700A (en) * 2007-08-09 2007-11-01 Kureha Corp Method for stabilizing color tone of polyarylenesulfide resin molding and method for producing polyarylenesulfide resin composition
JP2010006858A (en) * 2008-06-24 2010-01-14 Toray Ind Inc Polyphenylene sulfide resin composition
JP2011132336A (en) * 2009-12-24 2011-07-07 Toray Ind Inc Fuel tank

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55156342A (en) * 1979-05-25 1980-12-05 Hitachi Ltd Resin sealed electronic parts
JPS569014A (en) * 1979-03-07 1981-01-29 Vni I Pk I Metarurugiichiesuko Nonnslip type multiple stream line material rolling mill
JPS5681957A (en) * 1979-12-07 1981-07-04 Hitachi Ltd Semiconductor package using thermoplastic resin and manufacture thereof
JPS57108135A (en) * 1980-12-26 1982-07-06 Asahi Glass Co Ltd Method for removing common salt from polyphenylene sulfide resin
JPS582322A (en) * 1981-06-30 1983-01-07 Nitto Electric Ind Co Ltd Epoxy resin composition for encapsulation of semiconductor
JPS5915430A (en) * 1982-07-16 1984-01-26 Dainippon Ink & Chem Inc Method for refining polyphnylene sulfide
JPS59217728A (en) * 1983-05-26 1984-12-07 Dainippon Ink & Chem Inc Purification of polyphenylene sulfide
JPS59219331A (en) * 1983-05-27 1984-12-10 Dainippon Ink & Chem Inc Purification of polyphenylene sulfide
JPS60210631A (en) * 1984-04-04 1985-10-23 Toyo Soda Mfg Co Ltd Removal of alkali metal salt from polyphenylene sulfide resin
JPS61120856A (en) * 1984-11-15 1986-06-07 Matsushita Electric Works Ltd Polyphenylene sulfide resin composition
JPS6236461A (en) * 1985-08-12 1987-02-17 Matsushita Electric Works Ltd Polyphenylene sulfide resin composition

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS569014A (en) * 1979-03-07 1981-01-29 Vni I Pk I Metarurugiichiesuko Nonnslip type multiple stream line material rolling mill
JPS55156342A (en) * 1979-05-25 1980-12-05 Hitachi Ltd Resin sealed electronic parts
JPS5681957A (en) * 1979-12-07 1981-07-04 Hitachi Ltd Semiconductor package using thermoplastic resin and manufacture thereof
JPS57108135A (en) * 1980-12-26 1982-07-06 Asahi Glass Co Ltd Method for removing common salt from polyphenylene sulfide resin
JPS582322A (en) * 1981-06-30 1983-01-07 Nitto Electric Ind Co Ltd Epoxy resin composition for encapsulation of semiconductor
JPS5915430A (en) * 1982-07-16 1984-01-26 Dainippon Ink & Chem Inc Method for refining polyphnylene sulfide
JPS59217728A (en) * 1983-05-26 1984-12-07 Dainippon Ink & Chem Inc Purification of polyphenylene sulfide
JPS59219331A (en) * 1983-05-27 1984-12-10 Dainippon Ink & Chem Inc Purification of polyphenylene sulfide
JPS60210631A (en) * 1984-04-04 1985-10-23 Toyo Soda Mfg Co Ltd Removal of alkali metal salt from polyphenylene sulfide resin
JPS61120856A (en) * 1984-11-15 1986-06-07 Matsushita Electric Works Ltd Polyphenylene sulfide resin composition
JPS6236461A (en) * 1985-08-12 1987-02-17 Matsushita Electric Works Ltd Polyphenylene sulfide resin composition

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62241961A (en) * 1986-04-14 1987-10-22 Tosoh Corp Polyphenylene sulfide composition
JPH0245560A (en) * 1988-08-04 1990-02-15 Toray Ind Inc Composition for sealing electronic part and resin-sealed electronic part
JPH0649356A (en) * 1992-11-30 1994-02-22 Toray Ind Inc Polyphenylene sulfide resin composition
JPH08157719A (en) * 1994-12-09 1996-06-18 Idemitsu Petrochem Co Ltd Polyarylene sulfide resin composition
EP1289133A1 (en) * 2001-01-30 2003-03-05 Matsushita Electric Industrial Co., Ltd. Saw device and method for manufacture thereof
EP1289133A4 (en) * 2001-01-30 2005-03-30 Matsushita Electric Ind Co Ltd Saw device and method for manufacture thereof
US6998687B2 (en) 2001-01-30 2006-02-14 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave (SAW) device
JP2003096298A (en) * 2001-09-25 2003-04-03 Toray Ind Inc Polyphenylene sulfide resin composition and condenser part
JP2007284700A (en) * 2007-08-09 2007-11-01 Kureha Corp Method for stabilizing color tone of polyarylenesulfide resin molding and method for producing polyarylenesulfide resin composition
JP2010006858A (en) * 2008-06-24 2010-01-14 Toray Ind Inc Polyphenylene sulfide resin composition
JP2011132336A (en) * 2009-12-24 2011-07-07 Toray Ind Inc Fuel tank

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