JPS62143223A - Soft bias type magneto-resistance effect element - Google Patents
Soft bias type magneto-resistance effect elementInfo
- Publication number
- JPS62143223A JPS62143223A JP28282585A JP28282585A JPS62143223A JP S62143223 A JPS62143223 A JP S62143223A JP 28282585 A JP28282585 A JP 28282585A JP 28282585 A JP28282585 A JP 28282585A JP S62143223 A JPS62143223 A JP S62143223A
- Authority
- JP
- Japan
- Prior art keywords
- film
- shield
- gap
- gap length
- bias
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- Magnetic Heads (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は各種磁気記録装置に使用される磁気ヘッドの中
で特に再生専用ヘッドとして使われる磁気抵抗効果型薄
膜ヘッドに係り、特に高分解能化とプロセスの簡略化に
つながるヘッド構造に関する。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a magnetoresistive thin film head used as a read-only head among magnetic heads used in various magnetic recording devices, and particularly relates to a magnetoresistive thin film head used as a read-only head. Regarding the head structure that leads to process simplification.
従来の磁気シールド型磁気抵抗効果素子（これについて
は特開昭５０−１７１２号公報に記載）の１例を第４図
に示す。ここで、６は非磁性基板、５は強磁性体から成
る下部シールド膜、２は下部シールド膜５と磁気抵抗効
果膜間の電気的絶縁を行う下部絶縁膜、３は磁気抵抗効
果を有する強磁性体薄膜（磁気抵抗効果膜）、７は磁気
抵抗効果膜にバイアス磁界を印加するための金属薄膜（
シャント膜）、２′はシャフト膜７と上部シールド膜間
の電気的絶縁を行う上部絶縁膜、５′は強磁性体から成
るＦ部シールド膜、である。本断面素子構造はシャフト
バイアス方式による磁気シールド型磁気抵抗効果素子を
例に取った。このような磁気シールド型、とりわけ両面
シールドの磁唄（抵抗効果素子の分解能が高いことは公
知である。しかしながら、磁気シールド型磁気抵抗効果
素子はノンシールド型磁気抵抗効果素子と比べて作製工
程が複雑で、しかも再生波形の対称性が悪いという欠点
があった。FIG. 4 shows an example of a conventional magnetically shielded magnetoresistive element (described in Japanese Unexamined Patent Publication No. 1712/1982). Here, 6 is a nonmagnetic substrate, 5 is a lower shield film made of a ferromagnetic material, 2 is a lower insulating film that provides electrical insulation between the lower shield film 5 and the magnetoresistive film, and 3 is a strong magnetic film having a magnetoresistive effect. A magnetic thin film (magnetoresistive film); 7 is a metal thin film (magnetoresistive film) for applying a bias magnetic field to the magnetoresistive film;
shunt film), 2' is an upper insulating film for electrically insulating between the shaft film 7 and the upper shield film, and 5' is an F-section shield film made of a ferromagnetic material. This cross-sectional element structure takes a magnetically shielded magnetoresistive element using a shaft bias method as an example. It is known that the resolution of such magnetically shielded magnetoresistive elements, especially double-sided shielded magnetoresistance effect elements, is high. However, the manufacturing process of magnetically shielded magnetoresistive elements is longer than that of non-shielded magnetoresistive elements. The problem was that it was complicated and the symmetry of the reproduced waveform was poor.
本発明の目的は磁気シールド型磁気抵抗効果素子におい
て、上記の欠点をなくすヘッド構造を提供することにあ
る。An object of the present invention is to provide a head structure for a magnetically shielded magnetoresistive element that eliminates the above-mentioned drawbacks.
両面シールド型磁気抵抗効果素子としては、両面シール
ドとも磁性基板１片側シールドが磁性基板でもう片側シ
ールドが磁性薄膜さらに両面シールドとも磁性薄膜のも
のがある。第４図に示されたような従来の両面シールド
型磁気抵抗効果素子では、上部および下部シールド膜Ｊ
ｊＪの違いや上部ギャップ長ｇ８と下部ギャップ長ｇ１
などが異なるため再生波形の対称性が悪いという欠点が
あった。As a double-sided shield type magnetoresistive element, there is a double-sided shield with a magnetic substrate, one shield with a magnetic substrate and the other shield with a magnetic thin film, and both shields with a magnetic thin film. In the conventional double-sided shield type magnetoresistive element as shown in FIG.
jJ difference and upper gap length g8 and lower gap length g1
The problem was that the symmetry of the reproduced waveform was poor due to the difference in factors such as:
また磁気抵抗効果膜にバイアス磁界を印加するためのバ
イアス膜形成は、作製プロセスを増加させろと共にギャ
ップ長精度を低下させろ原因となる。Furthermore, forming a bias film for applying a bias magnetic field to the magnetoresistive film increases the number of manufacturing processes and causes a decrease in gap length accuracy.
そこで、再生波形の対称性を向上させるため上部ギャッ
プ長ｇ２と下部ギャップ長ｇ１を等しくし、さらに上部
シールド膜と下部シールド膜とは透磁率の異なる材料を
用いることにより、片側シールド膜をバイアス膜と兼用
したものが本発明である。Therefore, in order to improve the symmetry of the reproduced waveform, the upper gap length g2 and the lower gap length g1 are made equal, and the upper shield film and the lower shield film are made of materials with different magnetic permeabilities. The present invention combines the two functions.
以下１本発明を実施例により説明する。The present invention will be explained below with reference to examples.
実施例１
第１図は、本発明によるソフトバイアス型磁気抵抗効果
素子の切断面の１例を示す。本発明においては、下部シ
ールド膜として強磁性体のＭ ｎ −７、ｎ裁板１（厚
さ〜２剛飽和磁束密度〜５ Ｋ Ｇ 。Example 1 FIG. 1 shows an example of a cross section of a soft bias type magnetoresistive element according to the present invention. In the present invention, the lower shield film is made of a ferromagnetic material M n -7, n cut plate 1 (thickness ~ 2 rigid saturation magnetic flux density ~ 5 K G ).
透磁率〜４００ （ＩＭＨｚ））を用い、その上に下部
ギャップ膜として厚さ４５０ｍのアルミナ絶縁膜２を形
成した後、磁気抵抗効果膜として厚さ３５＋ｎｎ＋のパ
ーマロイ膜３（Ｎｉ−１９％Ｆｅ合金）を形成する。次
いで上部ギャップ膜として厚さ４００ｆｆｎのアルミナ
絶縁膜２′を形成した後、上部シールド膜として強磁性
体のＮｉ−Ｚｎ基板１１ （厚さ〜２ ｍｍ、飽和磁束
密度〜３．５ＫＧ。After forming an alumina insulating film 2 with a thickness of 450 m as a lower gap film thereon, a permalloy film 3 with a thickness of 35+nn+ (Ni-19% Fe alloy) was formed as a magnetoresistive film. ) to form. Next, after forming an alumina insulating film 2' with a thickness of 400 ffn as an upper gap film, a ferromagnetic Ni-Zn substrate 11 (thickness ~2 mm, saturation magnetic flux density ~3.5 KG) is formed as an upper shield film.
透磁率〜２０００ （１，ＭＨｚ ） ）を接着剤４に
て加圧接合した構造である。本素子は下部シールド膜を
バイアス膜と兼用した構造で上部ギャップ長ｇ２と下部
ギャップ長ｇ１がほぼ等しいため波形対称性が良く、し
かも上部および下部シールド膜とも膜厚がギャップ長に
対して充分に厚いため、裾広がりの少ない急峻な再生波
形が得られる。It has a structure in which magnetic permeability is ~2000 (1, MHz)) and is pressure bonded with adhesive 4. This device has a structure in which the lower shield film is also used as a bias film, and the upper gap length g2 and the lower gap length g1 are almost equal, so the waveform symmetry is good, and the film thickness of both the upper and lower shield films is sufficient for the gap length. Because it is thick, a steep reproduced waveform with less widening can be obtained.
実施例２
第２図は、本発明によるソフトバイアス型磁気抵抗効果
素子の切断面の他の１例を示す。本発明においては、下
部シールド膜として強磁性のＭｎ−Ｚ ｎ基板１ （Ｊ
すさ〜２ｍ、飽和磁束密度〜５ＫＧ透磁率〜４０００
（Ｉ ＭＨｚ ） ）を用い、その上に下部ギャップ膜
として／Ｉ；Ｃさ４５０ｎｍのアルミナ絶縁膜２を形成
した後、磁気抵抗効果膜として厚さ３５ｎｍのパーマロ
イ膜３（Ｎｉ−１９％Ｆ” ｅ合金）を形成する。次い
で上部ギャップ膜として厚さ４５０ｎｍのアルミナ絶縁
膜２′を形成した後、上部シールド膜として強磁性体の
（”、 ｏ Ｎ ｂ Ｚｒ系非晶質膜５（膜厚〜５μｍ
、飽和磁束密度〜５ＫＧ、透磁率〜１０００ （Ｌ Ｍ
Ｈｚ ）Ｃ０８７，ａ ｔ、％）を形成した構造であ
る。本素子は下部シールド膜をバイアス膜と兼用した構
造で上部ギャップ長と２と下部ギャップ長ｇｔが等しい
ため波形対称性は良いが、上部シールド膜厚と下部シー
ルド膜Ｊ’２が異なるため、上部シールド膜側で多少裾
広がりが見られる。Example 2 FIG. 2 shows another example of a cross section of the soft bias type magnetoresistive element according to the present invention. In the present invention, a ferromagnetic Mn-Z n substrate 1 (J
Height ~2m, saturation magnetic flux density ~5KG magnetic permeability ~4000
(I MHz)), and after forming an alumina insulating film 2 with /I;C thickness of 450 nm as a lower gap film thereon, a permalloy film 3 with a thickness of 35 nm (Ni-19%F" Next, after forming an alumina insulating film 2' with a thickness of 450 nm as an upper gap film, a ferromagnetic material ('', o N b Zr-based amorphous film 5 (film thickness 450 nm) is formed as an upper shield film. ~5μm
, saturation magnetic flux density ~5KG, magnetic permeability ~1000 (L M
Hz) C087,at,%). This device has a structure in which the lower shield film is also used as a bias film, and the upper gap length 2 and the lower gap length gt are equal, so the waveform symmetry is good, but since the upper shield film thickness and the lower shield film J'2 are different, the upper A slight broadening can be seen on the shield membrane side.
実施例；３
第３１＋７１は１本発明によるソフトバイアス型磁気抵
抗効果素子の切断面の他の１＠を示す。本発明において
は、ジルコニア非磁性基板６（厚さ〜２ｍ）上に下部シ
ールド膜としてＣｏＮｂＺｒ系非晶質膜５（膜Ｉダ〜２
μｍ、飽和磁束密度〜５ＫＧ、ｉ／１ｌｌ１４］０００
（ｌ ＭＩＩ ｚ ） Ｃｏ ８２ ａｔ％）を形成
した後、下部ギャップ膜としてノダさ４５０ｎｍのアル
ミナ絶縁膜２を形成する。次いで磁気抵抗効果膜として
厚さ３５ｎｍのパーマロイ１１１３（Ｎｉ−１９％Ｆｅ
合金）を形成した後、上部ギャップ膜としてノゾさ４５
０ｎｍのアルミナ絶縁膜２′ を形成し、さらに上部シ
ールド膜としてＮｉ １９％ Ｆ ０合金薄膜５１ （
膜ｐｌ〜２μｍ、飽和磁束密Ｊαｔ ＯＫ Ｇ、透磁）
４・ス：３０００ （］、 Ｍ Ｉ（ｙ、 ） ）を形
成した構造である。本素子は下部シールド膜をバイアス
；（９と兼用した構造で上部ギャップ長ｇ２と下部ギャ
ップ長ｇ１が等しいため波形対称性は良いが、両シール
ドとも膜厚がＭいため再生波形に裾広がりが見られる。Example; 3 No. 31+71 indicates another cross section of the soft bias type magnetoresistive element according to the present invention. In the present invention, a CoNbZr-based amorphous film 5 (film I-2 m) is formed as a lower shield film on a zirconia nonmagnetic substrate 6 (thickness ~2 m).
μm, saturation magnetic flux density~5KG, i/1ll14]000
(l MII z ) Co 82 at%), an alumina insulating film 2 having a thickness of 450 nm is formed as a lower gap film. Next, Permalloy 1113 (Ni-19%Fe) with a thickness of 35 nm was used as a magnetoresistive film.
After forming the upper gap film, the nozzle 45
A 0 nm alumina insulating film 2' is formed, and a Ni 19% F 0 alloy thin film 51 (
Film pl~2μm, saturation magnetic flux density Jαt OK G, magnetic permeability)
4.S:3000 (], M I(y, )). This device has a structure in which the lower shield film is biased (also used as 9), and the upper gap length g2 and the lower gap length g1 are equal, so the waveform symmetry is good, but since the film thickness of both shields is M, the reproduced waveform has a wide tail. It will be done.
本発明によれば、従来法と比較してより高精度なギャッ
プ長制御（従来４５０±９０ｎｍ、本発明４．５０±４
０ ｎ ｍ）が可能となり、それに伴い波形対称性が向
上した。また、バイアス膜をシールドｌ＆’と兼用する
ことにより作製工程は最大従来の６エ程から４工程と低
減し１作製時間２２〜２５時間から１５時間に低減した
。According to the present invention, the gap length can be controlled with higher accuracy compared to the conventional method (450±90 nm in the conventional method, 4.50±4 nm in the present invention).
0 nm), and the waveform symmetry improved accordingly. Furthermore, by using the bias film also as the shield l&', the maximum manufacturing process was reduced from the conventional 6 steps to 4 steps, and the manufacturing time was reduced from 22 to 25 hours to 15 hours.
第１図、第２図および第；３図は本発明によるソフトバ
イアス型磁気抵抗効果素子の断面図、第４図は従来のシ
ャントバイアス型磁気抵抗効果素子の断面図である。
１．１１ ・強磁性体基板（シールド膜、バイアス膜を
兼用することにあり）、２．２’・・・絶縁膜、３・・
・磁気抵抗効果膜、４・・・接着層、５，５１・・・強
磁性体薄膜（シールド膜、バイアス膜を−１り用するこ
とにあり）、５′・・・強磁性体基板（シールド膜）、
６・・・非磁性基板、７・・・バイアスｌｌｌ＾。1, 2 and 3 are sectional views of a soft bias type magnetoresistive element according to the present invention, and FIG. 4 is a sectional view of a conventional shunt bias type magnetoresistive element. 1.11 ・Ferromagnetic substrate (also serves as shield film and bias film), 2.2'...insulating film, 3...
・Magnetoresistive film, 4...adhesive layer, 5, 51...ferromagnetic thin film (shield film and bias film are used as -1), 5'...ferromagnetic substrate ( shield membrane),
6...Nonmagnetic substrate, 7...Bias lll^.
Claims (1)
配することを特徴とするソフトバイアス型磁気抵抗効果
素子。 ２、片側シールド膜をバイアス膜として兼用することを
特徴とする特許請求の範囲第１項記載のソフトバイアス
型磁気抵抗効果素子。 ３、前記磁気抵抗効果膜と両側の前記シールド膜間との
距離が等しいことを特徴とする特許請求の範囲第１項ま
たは第２項記載のソフトバイアス型磁気抵抗効果素子。 ４、バイアス膜を兼用する前記片側シールド膜の透磁率
がもう片方のシールド膜の透磁率の １．５倍以上であることを特徴とする特許請求の範囲第
１項または第２項または第３項に記載のソフトバイアス
型磁気抵抗効果素子。[Claims] 1. A soft bias type magnetoresistive element characterized in that shield films are arranged on both sides of the magnetoresistive film so as to sandwich the magnetoresistive film. 2. The soft bias type magnetoresistive element according to claim 1, wherein the one-side shield film also serves as a bias film. 3. The soft bias type magnetoresistive element according to claim 1 or 2, wherein the distance between the magnetoresistive film and the shield films on both sides is equal. 4. Claim 1, 2 or 3, characterized in that the magnetic permeability of the shield film on one side, which also serves as a bias film, is 1.5 times or more the magnetic permeability of the other shield film. The soft bias type magnetoresistive effect element described in .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28282585A JPS62143223A (en) | 1985-12-18 | 1985-12-18 | Soft bias type magneto-resistance effect element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28282585A JPS62143223A (en) | 1985-12-18 | 1985-12-18 | Soft bias type magneto-resistance effect element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62143223A true JPS62143223A (en) | 1987-06-26 |
Family
ID=17657568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28282585A Pending JPS62143223A (en) | 1985-12-18 | 1985-12-18 | Soft bias type magneto-resistance effect element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62143223A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05159247A (en) * | 1991-12-10 | 1993-06-25 | Nec Corp | Magneto-resistance effect head |
| JPH09120511A (en) * | 1996-10-18 | 1997-05-06 | Matsushita Electric Ind Co Ltd | Thin film magnetic head |
| JPH09120510A (en) * | 1996-10-18 | 1997-05-06 | Matsushita Electric Ind Co Ltd | Thin film magnetic head |
| JP2009165338A (en) * | 2007-12-11 | 2009-07-23 | Mitsubishi Electric Corp | Compressor, torque control device and air handling unit |
| US7637001B2 (en) * | 2000-02-10 | 2009-12-29 | Tdk Corporation | Method of manufacturing a thin-film magnetic head |
-
1985
- 1985-12-18 JP JP28282585A patent/JPS62143223A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05159247A (en) * | 1991-12-10 | 1993-06-25 | Nec Corp | Magneto-resistance effect head |
| JPH09120511A (en) * | 1996-10-18 | 1997-05-06 | Matsushita Electric Ind Co Ltd | Thin film magnetic head |
| JPH09120510A (en) * | 1996-10-18 | 1997-05-06 | Matsushita Electric Ind Co Ltd | Thin film magnetic head |
| US7637001B2 (en) * | 2000-02-10 | 2009-12-29 | Tdk Corporation | Method of manufacturing a thin-film magnetic head |
| US7975367B2 (en) | 2000-02-10 | 2011-07-12 | Tdk Corporation | Method of manufacturing a thin-film magnetic head |
| US8448330B2 (en) | 2000-02-10 | 2013-05-28 | Tdk Corporation | Method of manufacturing a thin-film magnetic head |
| JP2009165338A (en) * | 2007-12-11 | 2009-07-23 | Mitsubishi Electric Corp | Compressor, torque control device and air handling unit |
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