JPS62110245A - Secondary electron spectroscope with strong electric field for extracting secondary electron - Google Patents
Secondary electron spectroscope with strong electric field for extracting secondary electronInfo
- Publication number
- JPS62110245A JPS62110245A JP60249691A JP24969185A JPS62110245A JP S62110245 A JPS62110245 A JP S62110245A JP 60249691 A JP60249691 A JP 60249691A JP 24969185 A JP24969185 A JP 24969185A JP S62110245 A JPS62110245 A JP S62110245A
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- Prior art keywords
- secondary electron
- sample
- spectrometer
- electric field
- extraction electrode
- Prior art date
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Links
- 230000005684 electric field Effects 0.000 title claims abstract description 24
- 238000010894 electron beam technology Methods 0.000 claims abstract description 19
- 238000000605 extraction Methods 0.000 claims description 62
- 239000000523 sample Substances 0.000 claims description 37
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 238000000562 secondary electron spectroscopy Methods 0.000 claims description 5
- 238000005036 potential barrier Methods 0.000 abstract description 7
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 241000270295 Serpentes Species 0.000 description 1
- 235000002597 Solanum melongena Nutrition 0.000 description 1
- 244000061458 Solanum melongena Species 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- Testing Of Individual Semiconductor Devices (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、試料に電子ビームを照射し、試料よめ尭ル１
１−−シか舌ヱ／７’１Ｔ７１１７ポール心ＬＰナス啼
ふにより試料の電位を測定するようにしたＩＣテスタと
して好適な強二次電子引き出し電界を持つ二次電子分光
装置に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention provides a method for irradiating a sample with an electron beam and
This invention relates to a secondary electron spectroscopy device having a strong secondary electron extraction electric field and suitable as an IC tester which measures the potential of a sample using a pole core LP eggplant.
最近、ＩＣの集積度が向上してきたため、細い探側をＩ
Ｃ内部の配線に当てて、オッシロスコープ等で内部電位
を測定していた従来のＩＣテスタでは、探針の方が配線
より大きくなってしまい、測定不可能な状況になってき
た。そこで、この探針に代えて、電子ビームをプローブ
としてＩＣ内部の配線に照射し、そこから発生する二次
電子の強度からｒｃ内部の配線の電位を測定するＥＢテ
スタの開発が最近盛んに行われている。Recently, as the degree of integration of ICs has improved, I
In conventional IC testers, which measure the internal potential using an oscilloscope or the like, the probe is larger than the wiring, making measurement impossible. Therefore, instead of this probe, EB testers have recently been actively developed that use an electron beam as a probe to irradiate the wiring inside the IC and measure the potential of the wiring inside the RC from the intensity of the secondary electrons generated. It is being said.
第４図は、このような従来のＥＢテスタを示す図で、図
中１は対物レンズ、ＥＢは電子線、２はＩＣ等の試料、
３は試料２より二次電子を引き出すための網目状の引き
出し電極、４は二次電子をそのエネルギーに応じて弁別
するためのグリッド、５はグリッド４に電位Φを与える
ための電源、６は二次電子検出器、７は二次電子検出器
へ二次電子を導くための網目状の偏向電極、８は増幅器
、９は比較器で、増幅器８の出力と基準電圧を比較し、
比較器入力が一定になるように電源５に負帰還をかけて
いる。１０は記録計である。FIG. 4 is a diagram showing such a conventional EB tester, in which 1 is an objective lens, EB is an electron beam, 2 is a sample such as an IC,
3 is a mesh extraction electrode for extracting secondary electrons from the sample 2; 4 is a grid for discriminating secondary electrons according to their energy; 5 is a power source for applying a potential Φ to the grid 4; 6 is a grid for discriminating secondary electrons according to their energy; A secondary electron detector, 7 is a mesh deflection electrode for guiding secondary electrons to the secondary electron detector, 8 is an amplifier, 9 is a comparator, which compares the output of the amplifier 8 with a reference voltage,
Negative feedback is applied to the power supply 5 so that the comparator input is constant. 10 is a recorder.
このような構成において、電子線ＥＢの試料２への照射
によって試料２より発生した二次電子ｅは、引き出し電
極３を通過してグリッド４へ向かい、引き出し電極３と
グリッド４間の減速電界に打ち勝つエネルギーを有する
二次電子のみがグリッド４を通過して検出器６に検出さ
れる。増幅器８によって増幅された検出器６の出力信号
は負帰還回路を構成する比較器９に供給され、この供給
された信号が基準信号と一敗するように電源５からグリ
ッド４に与えられる電位が制御され、この電位が記録計
１０の表示として読み取られる。In such a configuration, secondary electrons e generated from the sample 2 by irradiating the sample 2 with the electron beam EB pass through the extraction electrode 3 and head toward the grid 4, and are affected by the deceleration electric field between the extraction electrode 3 and the grid 4. Only secondary electrons with overcoming energy pass through the grid 4 and are detected by the detector 6. The output signal of the detector 6 amplified by the amplifier 8 is supplied to a comparator 9 that constitutes a negative feedback circuit, and the potential applied from the power supply 5 to the grid 4 is set so that the supplied signal is at least equal to the reference signal. is controlled, and this potential is read as an indication on the recorder 10.
いま、試料２の電位をパラメータとしてグリッド電位を
変化させると、このときの二次電子強度は、第５図のよ
うなＳカーブ曲線群を描き、各曲線は試料電位に応じて
横軸方向に平行移動した関係になる。そこで、比較器９
の基準電圧を適当に選び、二次電子電流が一定の埴１．
になるようにグリッド電位を制御してやれば、グリッド
電位が試料の電位に１対ｌに対応するので、グリッド電
位を観測することにより、試料の電位を正確に測定する
ことができる。Now, when the grid potential is changed using the potential of sample 2 as a parameter, the secondary electron intensity at this time will draw a group of S-curve curves as shown in Figure 5, and each curve will change in the horizontal axis direction according to the sample potential. It becomes a parallel movement relationship. Therefore, comparator 9
Choosing the reference voltage appropriately, the secondary electron current is constant 1.
If the grid potential is controlled so that the grid potential corresponds to the potential of the sample in a ratio of 1:1, the potential of the sample can be accurately measured by observing the grid potential.
被測定対象となるＩＣ試料については、半導体製造技術
の進歩とともにＩＣ内部電極の幅がますまず微細になっ
てきている。電極幅が微細になればなる稈、微細電極に
よる局所電界が強くなり電極前面に電位障壁を形成する
。第６図は、この様子を示す図で、例えば、中央の電極
が＋５Ｖ、両側の近接した電極がＱＶとしたときの近傍
の電位分布を示したもので、電位接点Ｐが生じ、ここの
電位が例えば０．４Ｖとすれば、４．６ｅＶ以下のエネ
ルギの二次電子は検出できなくなってしまう。このため
検出電流が残少し、測定積度が悪くなると共に、場合に
よっては、検出電流が第４図のフィードバックループか
らはずれてしまい、測定不能ように例えばＩＫＶ程度を
加え、二次電子引き出し電界を強くすることで電位接点
を消滅させて抑制することができる。Regarding IC samples to be measured, the width of IC internal electrodes is becoming increasingly finer as semiconductor manufacturing technology advances. As the electrode width becomes finer, the local electric field due to the finer electrode becomes stronger, forming a potential barrier in front of the electrode. Figure 6 is a diagram showing this situation. For example, it shows the potential distribution in the vicinity when the central electrode is +5V and the adjacent electrodes on both sides are QV. A potential contact point P is generated, and the potential here is For example, if the voltage is 0.4V, secondary electrons with an energy of 4.6eV or less cannot be detected. For this reason, the detection current remains, which deteriorates the measurement integral, and in some cases, the detection current deviates from the feedback loop shown in Figure 4, so that a voltage of about IKV is applied to prevent the secondary electron extraction electric field from being measured. By increasing the strength, the potential contact can be eliminated and suppressed.
ところで、パッケージに入れられたＩＣ（［Ｃチップ表
面はパフケージ表面から約１〜１．５１■下に位置する
）の内部電位を測定する場合、分光器の二次電子引き出
し電極はＩＣパッケージ開口部の大きさく １ ｃｍ四
方程度）と分光器構造とその大きさのため近くてＩＣチ
ップ表面から２ｍｍ程度上に設置されるのが通常である
。さらに、引き出し電極とＩＣパッケージとの近接によ
る放電を避けるためアースシールド電極が分光器に設け
られている場合、引き出し電極とチップ表面間の距離は
さらに長くなる。このような現状の分光器構造のままで
引き出し電極電圧を上昇させると、二次電子が強い引き
出し電極電圧の影響を受けて分光器のエネルギ分解能を
悪化させるのみならず、電子ビームを４傷を軽減させる
ために用いられる低エネルギー次＋ｔ＜を耐電子線に悪
影響を及ぼしてしまう。By the way, when measuring the internal potential of an IC placed in a package (the surface of the C chip is located approximately 1 to 1.51 cm below the surface of the puff cage), the secondary electron extraction electrode of the spectrometer is placed at the opening of the IC package. Due to the structure and size of the spectrometer (approximately 1 cm square), it is usually installed close to the surface of the IC chip, approximately 2 mm above the surface of the IC chip. Furthermore, if the spectrometer is provided with an earth shield electrode to avoid discharge due to the proximity of the extraction electrode and the IC package, the distance between the extraction electrode and the chip surface becomes even longer. If the extraction electrode voltage is increased with the current spectrometer structure as it is, the secondary electrons will be affected by the strong extraction electrode voltage, which will not only deteriorate the energy resolution of the spectrometer, but also cause the electron beam to be damaged. The low energy order +t<, which is used for mitigation, has an adverse effect on electron beam resistance.
光器構造が設計でき、引き出し電極をＩＣチップ表面に
近づけ得たとしても、分光器とＩＣパッケージがほぼ一
体化するため、−次照射電子ビームの照射点の自由度が
大幅に低下してしまう。Even if the optical device structure can be designed and the extraction electrode can be brought close to the IC chip surface, the spectrometer and IC package are almost integrated, which greatly reduces the degree of freedom of the irradiation point of the -second irradiation electron beam. .
本発明は斯かる事情に鑑みてなされたもので、電子ビー
ムを用いて微細電極上の電位を測定する二次電子分光装
置において、分光器の状態を悪化させず、−次照射電子
ビームに影響を与えず、また−次電子ビーム照射点の自
由度をできるだけ低下させることなく強い二次電子引き
出し電界を印加できるようにすることを目的とする。The present invention has been made in view of the above circumstances, and in a secondary electron spectrometer that measures the potential on a fine electrode using an electron beam, it does not affect the condition of the spectrometer and does not affect the second irradiation electron beam. It is an object of the present invention to make it possible to apply a strong secondary electron extraction electric field without giving a secondary electron beam irradiation point and reducing the degree of freedom of a secondary electron beam irradiation point as much as possible.
そのために本発明の強二次電子引き出し電界を持つ二次
電子分光装置は、試料に電子線を照射する手段と、試料
に対向配置した分光器二次電子引き出し電極と、電子線
の照射により試料から発生した二次電子をそのエネルギ
に応じて弁別するためのグリッドとを備え、該グリッド
を通過した二次電子を検出することにより試料の電位を
測定するようにした装置において、前記分光器二次電子
引き出し電極と試料との間に、補助引き出し電極を試料
に対向して近接配置したことを特徴とする強二次電子引
き出し電界を持つ二次電子分光装置を特徴とするもので
ある。To this end, the secondary electron spectrometer having a strong secondary electron extraction electric field of the present invention has a means for irradiating a sample with an electron beam, a spectrometer secondary electron extraction electrode disposed opposite to the sample, and a means for irradiating the sample with an electron beam. and a grid for discriminating secondary electrons generated by A secondary electron spectroscopy device having a strong secondary electron extraction electric field is characterized in that an auxiliary extraction electrode is placed between the secondary electron extraction electrode and the sample in close proximity to the sample.
本発明による強二次電子引き出し電界を持つ二次電子分
光装置は、分光器二次電子引き出し電極と試料との間に
補助引き出し電極を、試料に対向して近接配置して、低
電圧で強い引き出し電界を実現している。また補助引き
出し電極を試料と共に移動可能にして照射ビーム位置を
自由に選べるようにしている。The secondary electron spectrometer with a strong secondary electron extraction electric field according to the present invention has an auxiliary extraction electrode placed between the spectrometer secondary electron extraction electrode and the sample in close proximity to the specimen, and has a strong secondary electron extraction field at low voltage. This realizes an extraction electric field. In addition, the auxiliary extraction electrode is movable together with the sample so that the irradiation beam position can be freely selected.
以下、本発明の実施例を図面を参照して説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第１図は、本発明による強二次電子引き出し電界を持つ
二次電子分光装置の一実施例を示す図で、図中、１１は
ＩＣパッケージ、１２は被測定対象であるＩＣチップ、
１３は分光器引き出し電極、１４は補助引き出し電極、
Ｉ５は絶縁物である。FIG. 1 is a diagram showing an embodiment of a secondary electron spectrometer having a strong secondary electron extraction electric field according to the present invention. In the figure, 11 is an IC package, 12 is an IC chip to be measured,
13 is a spectrometer extraction electrode, 14 is an auxiliary extraction electrode,
I5 is an insulator.
第１図に示す分光装置においては、分光器二次電子引き
出し電極１３と同電位■７の補助引き出し電極１４を、
試料面に対し０．１〜０，５１程度の間隔で近接配置す
る。こうすることにより、ＩＣチップ表面に低引き出し
電圧で強い引き出し電界を印加することができ、−次照
射電子ビームと二次電子に悪影嘗を与えずに電位障壁を
抑制することが可能となる。In the spectroscopic device shown in FIG.
It is arranged close to the sample surface at an interval of about 0.1 to 0.51. By doing this, a strong extraction electric field can be applied to the IC chip surface with a low extraction voltage, and the potential barrier can be suppressed without adversely affecting the negative irradiation electron beam and secondary electrons. .
さらに、補助引き出し電極と分光器引き出し電極とが等
電位であるため、ＩＣチップ表面から強い二次電子引き
出し電界で引き出された二次電子は、第２図に示すよう
に補助引き出し電極により強く発散される。このため分
光器に一次ビーム通過用のために開けられた穴に二次電
子が集中することがなく、分光器の性能は低下しない。Furthermore, since the auxiliary extraction electrode and the spectrometer extraction electrode are at equal potential, the secondary electrons extracted from the IC chip surface by the strong secondary electron extraction electric field are strongly diverged by the auxiliary extraction electrode, as shown in Figure 2. be done. Therefore, secondary electrons do not concentrate in the hole made in the spectrometer for passing the primary beam, and the performance of the spectrometer does not deteriorate.
さらに、補助引き出し電極と分光器の引き出し電極とは
独立しているため、試料を分光器に対して自由に移動で
き、ビーム照射位置の自由度もあまり損なわれない。な
お補助引き出し電極として、第１図では、グリッド電極
を考えているが、これは円孔電極でもかまわない。Furthermore, since the auxiliary extraction electrode and the extraction electrode of the spectrometer are independent, the sample can be moved freely relative to the spectrometer, and the degree of freedom in the beam irradiation position is not significantly impaired. Although a grid electrode is considered as the auxiliary lead-out electrode in FIG. 1, a circular hole electrode may also be used.
第３図は、本発明による分光装置をプローブカードと共
に使用した場合の実施例を示し、図中、２０ばウェーハ
、２１はＩＣチップ、２２はプローブカード、２３は針
、２４は分光器二次電子引き出し電極、２５は補助引き
出し電極、２６は照射電子ビームである。FIG. 3 shows an embodiment in which the spectroscopic device according to the present invention is used together with a probe card. In the figure, 20 is a wafer, 21 is an IC chip, 22 is a probe card, 23 is a needle, and 24 is a spectrometer secondary An electron extraction electrode, 25 is an auxiliary extraction electrode, and 26 is an irradiation electron beam.
第３図の分光装置においては、補助引き出し電極をプロ
ーブカード２２に保持するようにしているので、計２３
をパッドにコンタクトさせた後は、ビームに対し補助電
極をプローブカードと共に移動させることができ、第１
図の場合と同様に、ビーム照射位置の自由度を…なうこ
とはない。In the spectrometer shown in FIG. 3, the auxiliary extraction electrode is held on the probe card 22, so a total of 23
After contacting the probe card with the pad, the auxiliary electrode can be moved together with the probe card relative to the beam, and the first
As in the case shown in the figure, the degree of freedom of the beam irradiation position does not change.
以上のように本発明によれば、以下のような効果が得ら
れる。As described above, according to the present invention, the following effects can be obtained.
（１）補助引き出し電極をＩｃチップ表面に近接して設
置したことにより、強二次電子引き出し電界の印加が可
能になり、微細電極上に生じる電位障壁形成を抑制する
ことができる。(1) By placing the auxiliary extraction electrode close to the Ic chip surface, it is possible to apply a strong secondary electron extraction electric field, and it is possible to suppress the formation of potential barriers on the fine electrodes.
（２）強電界を低電圧で実現したことにより、分光器の
エネルギ分解能の低下を防止し、−次照射ビームへの影
響を少なくすることができる。(2) By realizing a strong electric field at a low voltage, it is possible to prevent the energy resolution of the spectrometer from deteriorating and to reduce the influence on the -order irradiation beam.
（３）分光器引き出し電極と補助引き出し電極を等電位
としたことにより二次電子軌道の補助引き出し電極によ
る発散効果により、分光器の性能悪化を防止することが
できる。(3) By setting the spectrometer extraction electrode and the auxiliary extraction electrode at equal potential, deterioration in spectrometer performance can be prevented due to the divergence effect of the auxiliary extraction electrode on secondary electron orbits.
（４）分光器引き出し電極と一補助引き出し電極が独立
して移動可能であるため、−次照射ビーム位置の自由度
があまり制限されない。(4) Since the spectrometer extractor electrode and the auxiliary extractor electrode are movable independently, the degree of freedom in the position of the second irradiation beam is not very limited.
第１図は、本発明による強二次電子引き出し電界を持つ
二次電子分光装置の一実施例を示す図、第２図ｉｆｔ、
補助引き出し電極近傍の電位分布と二次電子軌道の例を
示す図、
第３図は、本発明による強二次電子引き出し電界を持つ
二次電子分光装置をプローブカードと共に使用した場合
の一実施例を示す図、
第４図は従来の巳Ｂテヌタを示す図、
第５図ＬＪ、グ’Ｊ ’７ ＋”電位と二次電子電流の
関係を示す図、
第６図は微細電極による電位障壁の形成を示す図、第７
図は電位障壁を消滅させた場合の電位分布図である。
１１・・・ＩＣパッケージ、１２．２１・・・ＩＣチッ
プ、１３．２４・・・分光器二次電子引き出し電極、１
４゜２５・・・補助引き出し電極、２０・・・ウェーハ
、２２・・・プローブカード、２３・・・針、２６・・
・電子ビーム。
出 願 人 日本電子株式会社
代理人弁理士 蛭 川 昌 ＋３ （外２名）第２図
５ｃｖ ０．５ｍｍFIG. 1 is a diagram showing an embodiment of a secondary electron spectroscopy device having a strong secondary electron extraction electric field according to the present invention, and FIG.
A diagram showing an example of the potential distribution and secondary electron trajectory near the auxiliary extraction electrode. FIG. 3 is an example of the case where the secondary electron spectrometer having a strong secondary electron extraction electric field according to the present invention is used together with a probe card. Figure 4 is a diagram showing the conventional Snake B tenuta, Figure 5 is a diagram showing the relationship between LJ, G'J '7 +'' potential and secondary electron current, and Figure 6 is a diagram showing the potential barrier by fine electrodes. Figure 7 showing the formation of
The figure is a potential distribution diagram when the potential barrier is eliminated. 11... IC package, 12.21... IC chip, 13.24... Spectrometer secondary electron extraction electrode, 1
4゜25... Auxiliary extraction electrode, 20... Wafer, 22... Probe card, 23... Needle, 26...
・Electron beam. Applicant: JEOL Co., Ltd. Representative Patent Attorney Masa Hirukawa +3 (2 others) Figure 2 5cv 0.5mm
Claims (6)
した分光器二次電子引き出し電極と、電子線の照射によ
り試料から発生した二次電子をそのエネルギに応じて弁
別するためのグリッドとを備え、該グリッドを通過した
二次電子を検出することにより試料の電位を測定するよ
うにした装置において、前記分光器二次電子引き出し電
極と試料との間に、補助引き出し電極を試料に対向して
近接配置したことを特徴とする強二次電子引き出し電界
を持つ二次電子分光装置。(1) A means for irradiating the sample with an electron beam, a spectrometer secondary electron extraction electrode placed opposite the sample, and a grid for discriminating secondary electrons generated from the sample by electron beam irradiation according to their energy. In the apparatus, the potential of the sample is measured by detecting the secondary electrons that have passed through the grid, and an auxiliary extraction electrode is provided between the spectrometer secondary electron extraction electrode and the sample. A secondary electron spectroscopy device having a strong secondary electron extraction electric field characterized by being arranged close to each other and facing each other.
０．５ｍｍであることを特徴とする特許請求の範囲第１
項記載の強二次電子引き出し電界を持つ二次電子分光装
置。(2) The distance between the auxiliary extraction electrode and the sample is 0.1~
Claim 1 characterized in that the diameter is 0.5 mm.
A secondary electron spectroscopy device having a strong secondary electron extraction electric field as described in 2.
部に収納保持されることを特徴とする特許請求の範囲第
１項記載の強二次電子引き出し電界を持つ二次電子分光
装置。(3) A secondary electron spectrometer having a strong secondary electron extraction electric field according to claim 1, wherein the auxiliary extraction electrode is housed and held in an opening of an IC package.
設けられていることを特徴とする特許請求の範囲第１項
記載の強二次電子引き出し電界を持つ二次電子分光装置
。(4) A secondary electron spectrometer having a strong secondary electron extraction electric field according to claim 1, wherein the auxiliary extraction electrode is provided so as to be movable together with the sample.
し電極と等電位であることを特徴とする特許請求の範囲
第１項記載の強二次電子引き出し電界を持つ二次電子分
光装置。(5) A secondary electron spectrometer having a strong secondary electron extraction electric field as set forth in claim 1, wherein the auxiliary extraction electrode has the same potential as the spectrometer secondary electron extraction electrode.
されていることを特徴とする特許請求の範囲第１項記載
の強二次電子引き出し電界を持つ二次電子分光装置。(6) A secondary electron spectrometer having a strong secondary electron extraction electric field according to claim 1, wherein the auxiliary extraction electrode is held by a probe card.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60249691A JPS62110245A (en) | 1985-11-07 | 1985-11-07 | Secondary electron spectroscope with strong electric field for extracting secondary electron |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60249691A JPS62110245A (en) | 1985-11-07 | 1985-11-07 | Secondary electron spectroscope with strong electric field for extracting secondary electron |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62110245A true JPS62110245A (en) | 1987-05-21 |
| JPH0235421B2 JPH0235421B2 (en) | 1990-08-10 |
Family
ID=17196766
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60249691A Granted JPS62110245A (en) | 1985-11-07 | 1985-11-07 | Secondary electron spectroscope with strong electric field for extracting secondary electron |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62110245A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05502220A (en) * | 1989-12-07 | 1993-04-22 | ザ ユニバーシティ オブ ブリティッシュ コロンビア | Thialbulin antifungal and antibiotic |
| WO2006016613A1 (en) * | 2004-08-11 | 2006-02-16 | Hitachi High-Technologies Corporation | Scanning type electron microscope |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5871543A (en) * | 1981-09-30 | 1983-04-28 | シ−メンス・アクチエンゲゼルシヤフト | Reverse field type spectrometer |
-
1985
- 1985-11-07 JP JP60249691A patent/JPS62110245A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5871543A (en) * | 1981-09-30 | 1983-04-28 | シ−メンス・アクチエンゲゼルシヤフト | Reverse field type spectrometer |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05502220A (en) * | 1989-12-07 | 1993-04-22 | ザ ユニバーシティ オブ ブリティッシュ コロンビア | Thialbulin antifungal and antibiotic |
| WO2006016613A1 (en) * | 2004-08-11 | 2006-02-16 | Hitachi High-Technologies Corporation | Scanning type electron microscope |
| JP2006054094A (en) * | 2004-08-11 | 2006-02-23 | Hitachi High-Technologies Corp | Scanning electron microscope |
| US7459681B2 (en) | 2004-08-11 | 2008-12-02 | Hitachi High-Technologies Corporation | Scanning electron microscope |
| JP4519567B2 (en) * | 2004-08-11 | 2010-08-04 | 株式会社日立ハイテクノロジーズ | Scanning electron microscope and sample observation method using the same |
| US8698080B2 (en) | 2004-08-11 | 2014-04-15 | Hitachi High-Technologies Corporation | Scanning electron microscope |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0235421B2 (en) | 1990-08-10 |
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