JPS60160638A - Package for microwave semiconductor element - Google Patents

Package for microwave semiconductor element

Info

Publication number
JPS60160638A
JPS60160638A JP1641184A JP1641184A JPS60160638A JP S60160638 A JPS60160638 A JP S60160638A JP 1641184 A JP1641184 A JP 1641184A JP 1641184 A JP1641184 A JP 1641184A JP S60160638 A JPS60160638 A JP S60160638A
Authority
JP
Japan
Prior art keywords
metallized layer
container
alumina
metallized
copper base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1641184A
Other languages
Japanese (ja)
Inventor
Kazuo Noguchi
和男 野口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1641184A priority Critical patent/JPS60160638A/en
Publication of JPS60160638A publication Critical patent/JPS60160638A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a package which does not cause resonance over a wide band, by successively bonding second and third alumina frames both having the upper face metallized, on a first alumina frame bonded on a copper base and provided with input/output terminals, and by providing electrical connection only between the metallized layer of the second alumina frame and the copper base. CONSTITUTION:An alumina frame 7 has a shielding metallized layer 8 which is electrically connected with a copper base 1 through a metallized layer 9. In a container having such a construction, a grounding electrode is interposed between the sealing metallized section and the input/output leads, whereby the electrical coupling between the sealing section and the input/output leads is reduced and thus resonance is prevented from occurring over a wide band at microwave frequencies.

Description

【発明の詳細な説明】 （発明の技術分野） 本発明はマイクロ阪半導体素子用容器に関する。[Detailed description of the invention] (Technical field of invention) The present invention relates to a container for microsemiconductor devices.

（発明の背景） 一般にマイクロ波半尋体素子の気密゛封止容器は放熱板
及び接地電極としての銅ベースと、この銅ベース上に固
着されたアルミナ枠と、このアルミナ枠上面に相対して
設けられた入出力リードと。(Background of the Invention) In general, an airtight sealed container for a microwave half-body element includes a copper base serving as a heat sink and a ground electrode, an alumina frame fixed on the copper base, and an alumina frame that faces the upper surface of the alumina frame. With input and output leads provided.

アルミナ枠上にこれと重なるように固着され、上面に封
止用メタライズ層がほどこされた他のアルミナ枠とをも
ち、封止用メタライズ層にキャップを接着して気密封止
している。It is fixed onto an alumina frame so as to overlap with this, and has another alumina frame having a sealing metallized layer applied to its upper surface, and a cap is adhered to the sealing metallized layer for airtight sealing.

このような従来の構造をもった容器では、特に４ＧＨｚ
程度以上の高周波で使用される半導体素子の場合、容器
の構成部材が電気的に相互に結合す　−ることにより共
振現象が発生する。このため例えは＾出力高帯域で使用
されるＧａＡｓ　ＦＥＴの場合には使用帯域内での共振
周波数で利得が口上したり、あるいは帯域外での共振周
波数で、トランジスタを組み込んだ装置の中で発振現象
が生じるという欠点がめった。In a container with such a conventional structure, especially at 4 GHz
In the case of semiconductor devices that are used at higher frequencies than those of ordinary skill in the art, a resonance phenomenon occurs due to electrical coupling between the components of the container. For this reason, for example, in the case of a GaAs FET used in a high output band, the gain may increase at a resonance frequency within the band used, or oscillation may occur in a device incorporating a transistor at a resonance frequency outside the band. The drawback is that this phenomenon rarely occurs.

（発明の目的） 本発明の目的はマイクロ波周波数での広い帯域にわたっ
てこのような共振を起こさない容器を提供することにら
る。OBJECTS OF THE INVENTION It is an object of the present invention to provide a container that does not exhibit such resonance over a wide range of microwave frequencies.

（発明の構成） 本発明によるマイクロ波半尋体素子用容器は銅ベースと
銅ベース上に固着された第１のアルミナ枠と、この第１
のアルミナ枠上に設けられた入出力リードと第１のアル
ミナ枠上に固着され、さらに上面をメタライズされた第
２のアルミナ枠と、この第２のアルミナ枠上に固着され
上面に封止用メタライズ層をほどこされた第３のアルミ
ナ枠とをもち％第２のアルミナ枠のメタライズ層と銅ベ
ースとのみが電気的に接続されるように、第２のアルミ
ナ枠と第３のアルミナ枠との側面がメタライズされてい
る半導体素子用容器を得る。−このような構造をもつ容
器では封止用メタライズ部と、入出力リードとの間に接
地電極が入るため、封止部と入出力リードとの電気的結
合が小さくなりマイクロ波周波数で広い帯域にわたって
共振が発生しない。(Structure of the Invention) A container for a microwave half-body element according to the present invention includes a copper base, a first alumina frame fixed on the copper base, and a first alumina frame fixed on the copper base.
an input/output lead provided on the alumina frame, a second alumina frame fixed on the first alumina frame and further metalized on the top surface, and a sealing lead fixed on the second alumina frame on the top surface. A third alumina frame is provided with a metallized layer, and the second alumina frame and the third alumina frame are connected so that only the metallized layer of the second alumina frame and the copper base are electrically connected. A container for a semiconductor device is obtained, the side surface of which is metallized. - In a container with such a structure, a ground electrode is inserted between the metallized sealing part and the input/output leads, so the electrical coupling between the sealing part and the input/output leads is reduced, allowing a wide microwave frequency band. No resonance occurs over the entire range.

以下１図面を参照してより詳細に説明する。A more detailed explanation will be given below with reference to one drawing.

（従来技術） 第１図は従来構造の容器を示し銅ベースｌ上に第１のア
ルミナ枠２が固着されており、この第１のアルミナ枠２
には相対するように設けられた人、出力リード３．４と
上面にメタル封止用メタライズ層６の形成された封着用
アルミナ枠５とを有している。(Prior Art) FIG. 1 shows a container with a conventional structure, in which a first alumina frame 2 is fixed on a copper base l.
has output leads 3.4 and an alumina sealing frame 5 on which a metallized layer 6 for metal sealing is formed on the upper surface.

共振現象ハ主としてアルミナ枠５を介してメタライズ層
６と、入出力リード３．４の接続部との間の容量に起因
していると考えられ、これを防止するためにはメタライ
ズ層６をなくするか、アルミナ枠５の高さを高くするか
あるいはメタライズ層６の周囲長を変えるか、キャップ
の封止面のメタライズ面積を変えて共振点をずらすこと
が考えられる。しかしメタライズ層６をなくすると気密
性のよいメタル封止ができず信頼度を低下させることに
なる。又、アルミナ枠５を高くすることはケース内部の
凹部が深くなりトランジスタ組立上の作業性を悪くする
。そして又トランジスタの特性から容器の太きさもほぼ
決ってしまうためメタライズ層６の周囲長を変えること
はできない。さらにキャップ封正面のメタライズ面積を
変えてもアルミナ枠５を介したメタライズ層６と入出力
リード３．４の接続部との間の容量に大きな変化はなく
共振点を大きくずらせることは困難でおる。The resonance phenomenon is thought to be mainly caused by the capacitance between the metallized layer 6 and the connection part of the input/output lead 3.4 via the alumina frame 5, and in order to prevent this, it is necessary to eliminate the metallized layer 6. Alternatively, it may be possible to shift the resonance point by increasing the height of the alumina frame 5, changing the circumferential length of the metallized layer 6, or changing the metallized area of the sealing surface of the cap. However, if the metallized layer 6 is eliminated, metal sealing with good airtightness cannot be achieved, resulting in a decrease in reliability. Furthermore, increasing the height of the alumina frame 5 results in a deeper recess inside the case, which impairs the workability of assembling the transistor. Furthermore, since the thickness of the container is almost determined by the characteristics of the transistor, the peripheral length of the metallized layer 6 cannot be changed. Furthermore, even if the metallized area of the cap sealing surface is changed, there is no significant change in the capacitance between the metallized layer 6 and the connection part of the input/output lead 3.4 via the alumina frame 5, making it difficult to significantly shift the resonance point. is.

（発明の実施例） 第２図に本発明の一実施例を示す。第３図は第２図の断
面図である。第１図に相等するところには同符号を付し
た。アルミナ枠７にはシールド用メタライズ層８を有し
、このメタライズ層８はメタライズ層９を介して銅ベー
スｌと電気的に接続されている。第４図は従来の容器を
用いた場合の共振を示し直流バイアスのみ加えたときの
状態を示す。(Embodiment of the invention) FIG. 2 shows an embodiment of the invention. FIG. 3 is a sectional view of FIG. 2. Components that are equivalent to those in FIG. 1 are given the same reference numerals. The alumina frame 7 has a shielding metallized layer 8, and this metallized layer 8 is electrically connected to the copper base l via a metallized layer 9. FIG. 4 shows resonance when a conventional container is used, and shows the state when only a DC bias is applied.

４．２ＧＨｚ　、　８．３ＧＨｚで共振していることが
わかる。It can be seen that it resonates at 4.2GHz and 8.3GHz.

一方第５図は本実施例による容器を用いた場合を示す。On the other hand, FIG. 5 shows the case where the container according to this embodiment is used.

これによると第４図に示した共振現象は見られない。According to this, the resonance phenomenon shown in FIG. 4 is not observed.

このように本発明によればメタルによる気密封止ができ
、さらに容器の大きさにかかわる共振をなくすことによ
り安定で広帯域なトランジスタを得ることができる。As described above, according to the present invention, it is possible to achieve hermetic sealing with metal, and furthermore, by eliminating resonance related to the size of the container, a stable and broadband transistor can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来の構造の容器を示す斜視図である。 第２図は本発明の一実施例による構造の容器の斜視図で
、第３図はその一部断面図である。 第４図は従来の容器による共振を示すグラフで１、第５
図は本発明の一実施例による容器に共振のないことを示
すグラフである。FIG. 1 is a perspective view showing a container with a conventional structure. FIG. 2 is a perspective view of a container structured according to an embodiment of the present invention, and FIG. 3 is a partially sectional view thereof. Figure 4 is a graph showing resonance caused by a conventional container.
The figure is a graph showing the absence of resonance in a container according to an embodiment of the present invention.

Claims (1)

【特許請求の範囲】[Claims] 容器ベースと、該容器ベース上に固着された第１の絶縁
性壁部材と、第１の絶縁性壁部材上に設けられた外部導
出用専体と、前記第１の絶縁性壁部材上に固着されその
上面に第１のメタライズ層が施された第２の絶縁性壁部
材と、該第２の絶縁性壁部材上に固着され上面に第２の
メタライズ層をほどこされた第３の絶縁性壁部材と、前
記第２の絶縁性壁部材の前記第１のメタライズ層と前記
容器ベースと葡電気的に接続するように前記第２の絶縁
性壁部材と前記第１の絶縁性壁部材との側面に第３のメ
タライズ層が形成されていることを特徴とするマイクロ
波半導体素子用容器。a container base, a first insulating wall member fixed on the container base, an external lead-out unit provided on the first insulating wall member, and a first insulating wall member provided on the first insulating wall member. a second insulating wall member that is fixed and has a first metallized layer applied to its upper surface; and a third insulating wall member that is fixed to the second insulating wall member and has a second metallized layer applied to its upper surface. the second insulating wall member and the first insulating wall member so as to electrically connect the first metallized layer of the second insulating wall member to the container base; A container for a microwave semiconductor device, characterized in that a third metallized layer is formed on a side surface of the container.
JP1641184A 1984-01-31 1984-01-31 Package for microwave semiconductor element Pending JPS60160638A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1641184A JPS60160638A (en) 1984-01-31 1984-01-31 Package for microwave semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1641184A JPS60160638A (en) 1984-01-31 1984-01-31 Package for microwave semiconductor element

Publications (1)

Publication Number Publication Date
JPS60160638A true JPS60160638A (en) 1985-08-22

Family

ID=11915494

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1641184A Pending JPS60160638A (en) 1984-01-31 1984-01-31 Package for microwave semiconductor element

Country Status (1)

Country Link
JP (1) JPS60160638A (en)

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