JPS58191444A - Street detector for wafer - Google Patents
Street detector for waferInfo
- Publication number
- JPS58191444A JPS58191444A JP7410482A JP7410482A JPS58191444A JP S58191444 A JPS58191444 A JP S58191444A JP 7410482 A JP7410482 A JP 7410482A JP 7410482 A JP7410482 A JP 7410482A JP S58191444 A JPS58191444 A JP S58191444A
- Authority
- JP
- Japan
- Prior art keywords
- street
- wafer
- light receiving
- reflected light
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は、ＩＣなどを作るときに使うウェノ・のスト
リートを検出してウェハのファインアライメント會する
装置についてのものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an apparatus for fine alignment of a wafer by detecting streets on a wafer used when manufacturing ICs and the like.
ウェハは第１図の工うに外形が円状になっており、直交
するストリート３で各チップを区切り、外形の一部には
位置決めの基準になるオリエンテーシ冒ンフラット２ｔ
−設ける。The wafer has a circular outer shape as shown in Figure 1, each chip is separated by orthogonal streets 3, and a part of the outer shape has an orientation flat 2t that serves as a reference for positioning.
- Provide.
第１図のス） ＩＪ −） ３の部分拡大図を第２図に
、第２図の断面図管路６図に示す。図の６１〜６３社そ
ｒｂＪｅｎＫ交するストリートで、その幅はＷであシ、
４と５Ｈｒｃのチップである。A partially enlarged view of IJ-) 3 in FIG. 1 is shown in FIG. 2, and a sectional view of pipe line 6 in FIG. 2 is shown. The street where 61 to 63 companies and rbJenK intersect in the diagram, and its width is W.
They are 4 and 5 Hrc chips.
第１図のウェハ１にボンディングをしたり、ウェハ１を
検査したプするには、ウエノ・１の平行合せが必要にな
る。このためＫは、オリエンテーシ５ンフラット２を利
用してウエノ・１の位置を粗調整し、さらにストリート
乙に対するファインアライメントをする。In order to bond the wafer 1 shown in FIG. 1 or to inspect the wafer 1, it is necessary to align the wafer 1 in parallel. Therefore, K roughly adjusts the position of Ueno 1 using orientation 5 in flat 2, and further fine-aligns it with respect to Street 2.
次に、光ビームを利用したストリート検出装置の原理図
を第４図に示す０図で、１１は発光素子、１２はビーム
スプリッタ、１６は受光素子である。Next, FIG. 4 shows a principle diagram of a street detection device using a light beam, in which 11 is a light emitting element, 12 is a beam splitter, and 16 is a light receiving element.
発光素子１１からの光−ビームＩＩＡはビームスプリッ
タ１２で光ビームＩＩＢになシウエノ・１を照射する・
ウエノ１１からの反射光１１Ｃはビームスプリッタ１２
をとおって反射光１１Ｄになり、受光素子１６に達する
。The light beam IIA from the light emitting element 11 is turned into a light beam IIB by the beam splitter 12 and illuminates the light beam 1.
The reflected light 11C from the Ueno 11 is transmitted to the beam splitter 12
The reflected light becomes reflected light 11D and reaches the light receiving element 16.
次に、ウェハ１に対する入射光と反射光の関係を第５図
に示す。ＩＩＥ〜ＩＩＧ社炙だ一ム１１Ｂのうち、スト
リート６１への入射光であり、ストリート６１から正反
射する。１１Ｈはストリート６１とチップ５の界面への
入射光で４Ｄ、界面で乱反射する。ＩＩＫはチップ５へ
の入射光であり、図の工うにランダムに反射する。Next, the relationship between incident light and reflected light on the wafer 1 is shown in FIG. This light is incident on the street 61 of the IIE to IIG company flame beams 11B, and is specularly reflected from the street 61. 11H is light incident on the interface between the street 61 and the chip 5 and is diffusely reflected at the interface. IIK is light incident on the chip 5, and is reflected randomly as shown in the figure.
したがって、ストリート６１とチップ５の反射光では、
その強さが異なるので、反射光の強弱に工りストリート
３１の位置を検出することができる。Therefore, in the reflected light from street 61 and chip 5,
Since the intensities are different, the position of the carved street 31 can be detected based on the intensity of the reflected light.
この発明は、ス） ＩＪ −ト３１からの反射光１１Ｄ
を２個の受光素子で検出し、２個の受光素子の出力が等
しくなるようにウェハ１を移動してストリート３１のフ
ァインアライメントをするものである。以下１図面によ
シこの発明の詳細な説明する。This invention is directed to
is detected by two light receiving elements, and fine alignment of the street 31 is performed by moving the wafer 1 so that the outputs of the two light receiving elements are equal. The present invention will be described in detail below with reference to one drawing.
まず、この発明による実施例の構成図を第６図に示す。First, a configuration diagram of an embodiment according to the present invention is shown in FIG.
第６図社ス）リート６ｉ部分の反射光１１Ｄと受光素子
１３Ａ・１３Ｂｔ−オーバーラツプして図示したもので
、受光素子１３Ａと受光素子１５Ｂｌストリート６１に
直角になるように配置する。受光素子１５Ａと受光素子
１３Ｂは密着させても、離してもよく、受光素子１３Ａ
と受光素子１３Ｂの距離Ｌ＋ｔ一式で示せば次のように
なる。The reflected light 11D of the street 6i and the light receiving elements 13A and 13Bt are shown overlapping in FIG. The light receiving element 15A and the light receiving element 13B may be placed in close contact with each other or may be separated.
When expressed as a set of distance L+t of the light receiving element 13B, it becomes as follows.
Ｌｌ ≧ ０・・・・・・・・・・・・・・・・・・・
・・・・・・・・・・・・・・・・・・・・・・・・・
・・・・・ （り次に１反射光１１Ｄと受光素子１３Ａ
・１５Ｂの部分を第７図に示す、第７図のＬｌは受光素
子１５Ａ・１５Ｂの外縁間の距離、Ｄは反射光１１Ｄの
ビーム径である。Ll ≧ 0・・・・・・・・・・・・・・・・・・
・・・・・・・・・・・・・・・・・・・・・・・・
...(Next, 1 reflected light 11D and light receiving element 13A
- The portion 15B is shown in FIG. 7. In FIG. 7, Ll is the distance between the outer edges of the light receiving elements 15A and 15B, and D is the beam diameter of the reflected light 11D.
この発明では、ストリート６１の幅Ｗ１反射光１１Ｄの
ビーム径りおよび受光素子１３Ａと受光素子１３Ｂの距
離Ｌ１の関Ｋ、次の関係を設定する。In this invention, the following relationship is set between the width W1 of the street 61, the beam diameter of the reflected light 11D, and the distance L1 between the light receiving element 13A and the light receiving element 13B.
Ｄ）Ｗ・・・・・・・・・・・・・・・・・・・・・・
・・・・・・・・・・・・・・・・・・・・・；・・・
・・・・・（２）Ｄ ） Ｌ ＋・・・・・・・・・・
・・・・・・・・・・・・・・・・・・・・・・・・・
・・・・・・・・・・・・・・・・・・・（３）式（２
）から、ビーム径りはストリート３１の幅Ｗ工りも大き
いので、第６図のようにチップ４、ス） ＩＪ −）
３１およびチップ５Ｋまたがって反射光１１Ｄが得らｎ
る。D)W・・・・・・・・・・・・・・・・・・
・・・・・・・・・・・・・・・・・・・・・・・・・・・
・・・・・・(2)D）L＋・・・・・・・・・・・・
・・・・・・・・・・・・・・・・・・・・・・・・
・・・・・・・・・・・・・・・・・・(3) Equation (2
), the beam diameter and the width W of street 31 are also large, so as shown in Figure 6, the beam diameter is 4, IJ -)
Reflected light 11D is obtained across 31 and chip 5K.
Ru.
また、式（６）から受光素子１３Ａと受光素子１６Ｂは
同時に反射光１１Ｄｔ−受光することができる。Further, from equation (6), the light receiving element 13A and the light receiving element 16B can simultaneously receive the reflected light 11Dt-.
したがって、受光素子１５Ａの出力と受光素子１３Ｂの
出力が等しいときは、ストリート６１の中心と反射光１
１Ｄの中心が一致していることになる。逆Ｋ、受光素子
１３Ａ・１３Ｂの出力が異なるときは、出力が等しくな
るようにウェハ１を移動させることにニジ、ストリート
３１のファインアライメントをすることができる。Therefore, when the output of the light receiving element 15A and the output of the light receiving element 13B are equal, the center of the street 61 and the reflected light 1
This means that the centers of 1D coincide. In reverse K, when the outputs of the light receiving elements 13A and 13B are different, fine alignment of the street 31 can be performed by moving the wafer 1 so that the outputs are equal.
距離Ｌ２とビーム径りとの関係は任意であるが、Ｌ ２
牛りのとき検出効率がもっともよい。The relationship between distance L2 and beam diameter is arbitrary, but L 2
Detection efficiency is highest when the cow is fertilized.
第６図はス） ＩＪ −） ３１を検出する場合である
が、第２図のストリート３２・６３などのようにストリ
ート３１と直交するストリートを検出する場合は、検出
するストリートと直角になるように受光素子１３Ａ・１
３ＢＱ回転すｎ＃ｉよい。Figure 6 shows the case of detecting 31, but when detecting a street perpendicular to street 31, such as streets 32 and 63 in Figure 2, it is necessary to Light receiving element 13A・1
3BQ rotation is good.
以上のように、この発明によｎば２個の受光素子の出力
を調整することに工り、ウェハのファインアライメント
をすることができる。As described above, according to the present invention, fine alignment of a wafer can be achieved by adjusting the outputs of two light receiving elements.
第１図はウェハの外観図、
第２図は第１図のス） ＩＪ −） ５の部分拡大図。
第６図社第２図の断面図。
第４図はストリート検出装置の原理図、第５図線ウェハ
１に対する入射光と反射光の関係図、
第６図はこの発明による実施例の構成図、第７図は第６
図の反射光１１Ｄと受光素子１３Ａ・１３Ｂの部分図。
１・・・・・・ウェハ、２・・・・・・オリエンテーク
１ンフラツト、６・・・・・・ストリート、４・・・・
・・チップ、５・・・・・・チップ、１１・・・・・・
発光素子、１１Ａ〜ＩＩＫ・・・・・・光ビーム、１２
・・・・・・ビームスプリッタ、１３・・・・・・受光
素子、１６ｋ・・・・・・受光素子、１３Ｂ・・・・・
・受光素子、６１〜６６・・・・・・ストリート。
代理人 弁理士 小俣欽司
第１図
第２図
第４図
第５図
手続補正書
昭和５７年６月１日
特許庁長官 島 １）春 樹 殿
１ 事件の表示
ウェハのストリート検出装置
６・ 補正をする者
事件との関係 特許出願人
住 所 東京都大田区蒲田４丁目１９番７号名称 安
藤電気株式会社
代表者 大 城 俊 −
４、代理人 〒１４４
居 所 東京都大田区蒲田４丁目１９番７号安藤電気
株式会社内
氏 名 （８４０２） 弁理士 小 俣 欽 司巨
（、＋５．１゜３゜、□ 、ッ 計−１＆ 補
正の内容
（１）明細書第２ページ第１０行〜第１１行の［第１図
のウエノ・１に・・・・・・し友りするには、］を「第
１図のウェノ・１を検査するには、」と補正する。Fig. 1 is an external view of the wafer, and Fig. 2 is a partially enlarged view of IJ-) 5 in Fig. 1. Fig. 6 is a sectional view of Fig. 2 of the company. 4 is a diagram of the principle of the street detection device, FIG. 5 is a diagram of the relationship between incident light and reflected light on the wafer 1, FIG. 6 is a block diagram of an embodiment according to the present invention, and FIG.
A partial diagram of reflected light 11D and light receiving elements 13A and 13B in the figure. 1... Wafer, 2... Orientation 1 flat, 6... Street, 4...
...Chip, 5...Chip, 11...
Light emitting element, 11A to IIK...Light beam, 12
...... Beam splitter, 13... Light receiving element, 16k... Light receiving element, 13B...
- Light receiving element, 61-66... Street. Agent Patent Attorney Kinji Omata Figure 1 Figure 2 Figure 4 Figure 5 Procedural Amendment June 1, 1980 Commissioner of the Patent Office Shima 1) Haruki Tono 1 Incident Display Wafer Street Detection Device 6 Correction Patent applicant Address: 4-19-7 Kamata, Ota-ku, Tokyo Name: Ando Electric Co., Ltd. Representative: Shun Oshiro - 4, Agent: 144 Address: 4-19 Kamata, Ota-ku, Tokyo No. 7 Ando Electric Co., Ltd. Name (8402) Patent attorney Kin Tsukasa Komata (, +5.1゜3゜, □, tsu Total -1 & Contents of amendment (1) Page 2, lines 10 to 10 of the specification In line 11, [To make friends with Ueno 1 in Figure 1] is corrected to "To inspect Ueno 1 in Figure 1."
Claims (1)
ウェハ（１）からの反射光（ＩＩＤ）′ｉｋ検出するこ
とに工りウェハ（１）のストリート（６１）ｔ−ファイ
ンアライメントする装置において、 受光素子（１５Ａ）と受光素子（１３Ｂ）をストリート
（６１）に直角になるように配置し、 ストリート（６１）の幅Ｗ、反射光（１１Ｄ）のビーム
径Ｄ、受光素子（１３Ａ）と受光素子（１，５Ｂ）の距
離Ｌ１のとき、Ｄ ） Ｗ、 Ｄ ） Ｌ ＋、Ｌ１≧
０になる工うに調節し、 受光素子（１３Ａ）の出力と受光素子（１３Ｂ）の出力
が等しくなるようにウェハ（１）を移動してストリー）
（３１） ｋファインアライメントすることを％徴と
するウエノ・のストリート検出装置。[Claims] 1. Applying a light beam (11B) tl- to the wafer (1);
In a device that performs fine alignment of the street (61) of the wafer (1) by detecting the reflected light (IID) from the wafer (1), the light receiving element (15A) and the light receiving element (13B) are aligned with the street (61) of the wafer (1). 61), and when the width W of the street (61), the beam diameter D of the reflected light (11D), and the distance L1 between the light receiving element (13A) and the light receiving element (1, 5B), D) W, D) L+, L1≧
0, and move the wafer (1) so that the output of the light receiving element (13A) and the output of the light receiving element (13B) are equal.
(31) Ueno's street detection device whose characteristic is k-fine alignment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7410482A JPS58191444A (en) | 1982-04-30 | 1982-04-30 | Street detector for wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7410482A JPS58191444A (en) | 1982-04-30 | 1982-04-30 | Street detector for wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58191444A true JPS58191444A (en) | 1983-11-08 |
Family
ID=13537542
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7410482A Pending JPS58191444A (en) | 1982-04-30 | 1982-04-30 | Street detector for wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58191444A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6356933A (en) * | 1986-08-28 | 1988-03-11 | Nikon Corp | Alignment device |
| JPS63109048U (en) * | 1987-01-08 | 1988-07-13 | ||
| JP2009127722A (en) * | 2007-11-22 | 2009-06-11 | Honda Motor Co Ltd | Damping force variable damper |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4918473A (en) * | 1972-06-09 | 1974-02-18 |
-
1982
- 1982-04-30 JP JP7410482A patent/JPS58191444A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4918473A (en) * | 1972-06-09 | 1974-02-18 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6356933A (en) * | 1986-08-28 | 1988-03-11 | Nikon Corp | Alignment device |
| JPS63109048U (en) * | 1987-01-08 | 1988-07-13 | ||
| JP2009127722A (en) * | 2007-11-22 | 2009-06-11 | Honda Motor Co Ltd | Damping force variable damper |
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