JPS58100425A - Apparatus for uniformly applying resist film on wafer surfaces - Google Patents
Apparatus for uniformly applying resist film on wafer surfacesInfo
- Publication number
- JPS58100425A JPS58100425A JP19840381A JP19840381A JPS58100425A JP S58100425 A JPS58100425 A JP S58100425A JP 19840381 A JP19840381 A JP 19840381A JP 19840381 A JP19840381 A JP 19840381A JP S58100425 A JPS58100425 A JP S58100425A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- resist
- film thickness
- chuck mechanism
- diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Coating Apparatus (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体ウェハの両面にホトレジスト液（以玉レ
ジスト液と言う）を均一に塗布する装置に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an apparatus for uniformly applying a photoresist liquid (referred to as a resist liquid) to both sides of a semiconductor wafer.
従来、ウェハにレジスト液を塗布する装置は一般に片面
ずつ塗布する構造であったため、塗布したレジスト被膜
の均一性に関しては一万の面内の均一性を良くする工夫
のみが為されており、ウェハの両面のレジスト被膜を相
互に均等にするための工夫は為されていなかった。In the past, equipment for applying resist solution to wafers was generally structured to apply resist solution to one side at a time, so with regard to the uniformity of the applied resist film, only efforts were made to improve the uniformity within the 10,000-plane surface. No efforts were made to make the resist coatings on both sides uniform.
本発明者らはウニノーを回転させながらその両面に同時
にレジスト液を吹きつけてレジスト膜を形成する方法及
び同装置を研究開発したが、このような両面同時塗布を
゛実用化するためには、片面ずつのレジスト膜厚を均一
にするのみでなく、双方のレジスト膜厚を均等゛ならし
め得ることが必要である。The present inventors have researched and developed a method and device for forming a resist film by simultaneously spraying resist liquid onto both sides of a Uni-No while rotating it, but in order to put such simultaneous coating on both sides into practical use, It is necessary not only to make the resist film thickness uniform on one side, but also to make the resist film thickness on both sides even.
本発明は上記の事情に鑑みて為され、ウニノ１両面に同
時にレジスト液を塗布することができ、しかも両面のレ
ジスト膜厚を均一かつ均等ならしめ得る塗布装置を提供
することを目的とする。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a coating device capable of simultaneously coating both sides of a sea urchin with a resist solution and making the resist film thickness uniform and uniform on both sides.
上記の目的を達成するため、本発明者らは、ウェハ両面
のレジスト膜厚を均等ならしめるためにはウニ八両面に
接する空気の流れ状態を同様にしなければならぬ仁とを
実験的に発見、確認した上、上記の空気流れ状態に及ぼ
す諸要因の影響力を詳細に研究した結果本発明を完成し
たものであって、その特徴とするところはウェハ上下両
面とこれに対向する構成部材との間隔寸法をウニＩ・直
径Ａ以上に設定することである。In order to achieve the above object, the present inventors experimentally discovered that in order to equalize the resist film thickness on both sides of the wafer, the air flow condition in contact with both sides of the wafer must be made the same. The present invention was completed as a result of a detailed study of the influences of various factors on the air flow state, and its characteristics are This is to set the interval dimension of sea urchin I/diameter A or more.
第１図Ａおよび同Ｂはレジストを塗布すべきウェハ１の
平面図および同側面図でおる。本実施例において用いた
ウェハｌは切欠部１ａを形成した直径７５露の薄円枚状
である。1A and 1B are a plan view and a side view of a wafer 1 to which a resist is to be applied. The wafer 1 used in this example is a thin disk having a diameter of 75 mm and has a notch 1a formed therein.
Ｍ２図に両面塗布を行ない得るように構成したレジスト
塗布装置の一例を示す一部断面正面図である。Fig. M2 is a partially sectional front view showing an example of a resist coating apparatus configured to perform double-sided coating.
３ｒｉウエハｌを把持する３本の爪９（２本のみ図示す
）ｔ−備えたチャック機構であり、このチャック機構３
は円筒状の回転部６の下端に固着しである。上記の回転
部６はプーリ４およびタイミングベルト５を介して直流
モータ（図示せず）ＩＣより回転駆動される。This is a chuck mechanism equipped with three claws 9 (only two are shown) for gripping a 3ri wafer l, and this chuck mechanism 3
is fixed to the lower end of the cylindrical rotating part 6. The above-mentioned rotating part 6 is rotationally driven by a DC motor (not shown) IC via a pulley 4 and a timing belt 5.
チャック用の爪９．９に把持されて回転部６と共に回転
しているウニノＳ１の上面にレジスト液を吹きつけるた
めの上ノズル１Ｇを回転部６の中心孔の中に貫通設置す
る。またウニ／％ｌの下面にレジスト液を吹さつける下
ノズル１１をカップ１２の底面中央に貫通固着する。An upper nozzle 1G for spraying resist liquid onto the upper surface of the sea urchin S1 which is gripped by chuck claws 9.9 and rotating together with the rotating part 6 is installed through the center hole of the rotating part 6. Further, a lower nozzle 11 for spraying a resist solution onto the lower surface of the cup 12 is fixedly penetrated through the center of the bottom surface of the cup 12.
上記のカップ１２は回転中のウニノＳ１から遠心力で飛
散するレジスト液を受けるためその周囲を覆うための部
材で、シリンダ８により上下に移動せしめ得る構造であ
る。７は上下動の案内部材である。The above-mentioned cup 12 is a member for receiving and surrounding the resist liquid scattered by centrifugal force from the rotating Unino S1, and has a structure that can be moved up and down by the cylinder 8. 7 is a guide member for vertical movement.
前記の３本の爪９．９は、回転部６に固着されたプレー
ト１３に回動自在に軸支されている。以上のような構成
により、ウニノＳ１を爪９，９で水平に把持して回転さ
せながらその上、下両面に向けて上、下ノズル１０ 、
１１からレジスト液を吹きつけることができる。The three claws 9.9 are rotatably supported by a plate 13 fixed to the rotating part 6. With the above configuration, while holding and rotating the UNINO S1 horizontally with the claws 9, 9, the upper and lower nozzles 10,
The resist liquid can be sprayed from 11.
爪９，９に把持されている状態で、ウニノ１１の上面＃
−１前記のプレー） １３と平行に対向し、ウニノ〜ｌ
の下面は前記のカップ１２の底面と平行に対向する。While being held by the claws 9, 9,
-1 above play) Facing parallel to 13, Unino~l
The lower surface of the cup 12 faces parallel to the bottom surface of the cup 12.
最初はウェハ１を把持したチャック機構３を比較的低速
（例えば５００〜１．ＯＯＯｒｐｍ ）で回転させなが
らその上面及び下面に上ノズルｌＯ及び下ノズル１１か
らレジスト液を吹きつけると、レジスト液は容易にウェ
ハｌの全面に広がる。次いで回転速度゛を比較的高速（
例えば３，０００〜５．００Ｏｒｐｍ ）にすると、
余分のレジスト液は遠心力で振り切られて飛散し、レジ
スト液の膜厚が回転速度に応じて薄くなる。Initially, while rotating the chuck mechanism 3 holding the wafer 1 at a relatively low speed (for example, 500 to 1.00 rpm), the resist solution is easily sprayed onto the upper and lower surfaces of the chuck mechanism 3 from the upper nozzle lO and the lower nozzle 11. It spreads over the entire surface of the wafer l. Next, the rotation speed is set to a relatively high speed (
For example, if you set it to 3,000~5.00Orpm),
The excess resist solution is shaken off and scattered by centrifugal force, and the film thickness of the resist solution becomes thinner depending on the rotation speed.
第３図Ａはチャック機構３付近の拡大図、第３図Ｂはチ
ャンク機構３の爪９．９に把持されたウェハ１を下方か
ら見た図である。3A is an enlarged view of the vicinity of the chuck mechanism 3, and FIG. 3B is a view of the wafer 1 gripped by the claws 9.9 of the chunk mechanism 3 viewed from below.
ウェハｌの上方にプレート１３が平行に対向し、これら
両部材が一緒に回転するのでその間に挾まれた空気も同
方向に回転せしめられ、矢印Ｄ 、 Ｄ’のようにウェ
ハ１の外局方向に渦流をなして流動する。その流れの状
態は両部材の間隔寸法ｔの変化に伴って変わる。A plate 13 faces parallel to the top of the wafer 1, and since these two members rotate together, the air sandwiched between them is also rotated in the same direction, and the wafer 1 is directed toward the outside of the wafer 1 as shown by arrows D and D'. It flows in a vortex. The state of the flow changes as the distance t between the two members changes.
また、ウェハｌの下面とこれに対向するカップ１２の底
面Ｅとの間にも同様に空気の渦流を生じ、この渦流の状
態は両部材の間隔寸法ｍの変化に伴って変わるが、この
部分の渦流の状態は回転部材であるウェハ１と静止部材
であるカッ１１２の底面との間で生じる現象である丸め
、前述のウニノ・上面における渦流の状態と異なる。ま
た間隔寸法ｔの大小が渦流に及ぼす影響と、間隔寸法ｍ
の大小が渦流に及ぼす影響とは同様でない。Additionally, a vortex of air is similarly generated between the lower surface of the wafer l and the bottom surface E of the cup 12 facing it, and the state of this vortex changes as the distance m between the two members changes. The state of the vortex flow is different from the state of the vortex flow on the upper surface of the unicorn described above, which is a rounding phenomenon that occurs between the wafer 1, which is a rotating member, and the bottom surface of the cup 112, which is a stationary member. In addition, the influence of the size of the interval dimension t on the vortex flow, and the influence of the interval dimension m
The effect of the size of the vortex on the eddy current is not the same.
次に、これらの諸条件が空気の流動に及ばず影響、並び
にその結果としてのレジスト膜厚の変化状態を、第４図
乃至第７図について説明する。Next, the effects of these conditions on air flow and the resulting changes in resist film thickness will be explained with reference to FIGS. 4 to 7.
これらの図表において０印はウニノ・上面における膜厚
を表わし、・印はウェー１下面の膜厚を表わす。In these charts, the 0 mark represents the film thickness on the upper surface of the wafer, and the * mark represents the film thickness on the lower surface of the wafer.
測定個所は第４図Ａに示すごとくウニノＳ１の中央の点
イと、周辺に近い点Ｉ・と、両者の中間の点口との３点
である。これらの実験に用いたレジスト液は粘［６０ｅ
ｐのものである。As shown in FIG. 4A, the measurement points were three points: point A in the center of Unino S1, point I near the periphery, and the point in the middle between the two. The resist solution used in these experiments was viscous [60e
It is of p.
第４図Ｂ及び同Ｃは、ウェハｌの上面とこれに対向する
構成部材（本例においてはグレート１３）との間隔寸法
ｔを種々に変えた場合の膜厚分布の例を示し、第◆図ａ
ｔ！Ａ＝５＋ａｇの場合、第４図Ｃはｔ−（資）■の場
合である。4B and 4C show examples of film thickness distributions when the distance t between the upper surface of the wafer l and the constituent member facing it (the grating 13 in this example) is varied; Diagram a
T! In the case of A=5+ag, FIG. 4C is the case of t-(equity)■.
両図を対比して明瞭に理解されるように、を寸法が過小
（５謹）のときウニノ・上面の膜厚分布は中心部と周辺
部との差が大きい。そして、を寸法を適正和するとウニ
・・中心部と同周辺部とめ膜厚の差が減少し、かつウニ
ノー下面の膜厚に比して大差が無くなる。As can be clearly understood by comparing the two figures, when the dimensions are too small (50cm), there is a large difference in the film thickness distribution on the upper surface of the film between the center and the periphery. Then, by appropriately summing the dimensions, the difference in film thickness between the central part and the peripheral part of the sea urchin will be reduced, and there will be no large difference compared to the film thickness on the bottom surface of the sea urchin.
こうした現象を生じる理由は、を寸法が小さいと二つの
回転部材（ウニ／％１とプレート１３）ニ挾まれた空気
の流れが早く、従ってレジスト液の溶媒の蒸発速度が早
く、ウニ／％１上面のレジスト液がウェハ１下面のレジ
スト液よりも早く凝固して膜厚が厚くなり、この傾向が
ウニＩ・の中心部において特に著しく現われるものと考
えられる。The reason why this phenomenon occurs is that when the size of the plate is small, the flow of air between the two rotating members (Uni/%1 and plate 13) is fast, and therefore the evaporation rate of the solvent of the resist solution is fast. It is thought that the resist solution on the upper surface solidifies faster than the resist solution on the lower surface of the wafer 1, resulting in a thicker film, and this tendency is particularly noticeable in the center of the sea urchin I.
ｔ＝ｓ冒の場合（ｊｇＪ図Ｂ）とｔ□３０！ｍ１の場合
（ｌ＠４図Ｃ）との中間状態は図示を省略したが、この
間隔寸法ｔがウニノ・１の直径のＡ（本例において１５
■）以下のとき膜厚の不均一が顕著にな９．５以上の場
合は実用上許容し得る程度に膜厚が均一となる。In the case of t = s (jgJ diagram B) and t□30! The intermediate state between the case of m1 (l@4 Figure C) is not shown, but if this interval dimension t is A of the diameter of Unino・1 (in this example, 15
(2) In the following cases, the non-uniformity of the film thickness becomes noticeable.In the case of 9.5 or more, the film thickness becomes uniform to a practically acceptable extent.
第５図Ａ及び同Ｂはウニ／−１の下面とこれに対向する
部材（本例においてはカップ１２の底面Ｅ）との間隔寸
法ｍｔ種々に変え九場合の膜厚分布の例を示し、第５図
Ａｒ１ｒｎ＝１０−の場合、第５図Ｂｉｊｍ＝薗■の場
合である。FIGS. 5A and 5B show examples of film thickness distributions when the distance mt between the lower surface of the sea urchin/-1 and the member facing it (in this example, the bottom surface E of the cup 12) is varied. The case in FIG. 5 is Ar1rn=10-, and the case in FIG. 5 is Bijm=Sono■.
両図を対比して明瞭に理解されるように、ｍ寸法が過小
（１０■）のときウニノー下面の膜厚分布は中心部と周
辺部との差が大きい。そしてｍ寸法が適正値になるとウ
ニノ・下面中心部と同周辺部との膜厚差が減少し、かつ
ウニノ１上面の膜厚に比して大差が無くなる。As can be clearly understood by comparing the two figures, when the m dimension is too small (10 square meters), there is a large difference in the film thickness distribution on the lower surface of the Unino between the center and the periphery. When the m dimension reaches an appropriate value, the difference in film thickness between the central part and the peripheral part of the bottom surface of the sea urchin 1 decreases, and there is no large difference in film thickness compared to the film thickness of the top surface of the sea urchin 1.
こうした現象を生じる理由は、ｍ寸法が小さくなると空
気の流れが遅くなり、従ってレジスト液の溶媒の蒸発速
度が遅く、レジスト液が凝固しにくい丸めに膜厚が薄く
なり、この傾向がウニノ・の中心部において特に著しく
現われるものと考えられる。The reason for this phenomenon is that as the m dimension decreases, the air flow slows down, so the evaporation rate of the solvent in the resist solution slows down, and the film thickness becomes thinner, making it difficult for the resist solution to coagulate. It is thought that this phenomenon is particularly noticeable in the center.
ｍ＝＝１０ｍ、の場合（第５図Ａ）とｍ ＝ ３０ ｍ
の場合儂５図Ｂ）との中間状態は図示を省略したが、こ
の間隔寸法ｍがウェハ１の直径のＭ（本例において１５
−）以下のとき膜厚の不均一が顕著になり、５以上の場
合は実用上許容し得る程度に膜厚が均一となる。In the case of m = = 10 m (Fig. 5A) and m = 30 m
In this case, the intermediate state between the wafer 1 and the wafer 1 (in this example, 15
-) When it is less than 5, the non-uniformity of the film thickness becomes noticeable, and when it is 5 or more, the film thickness becomes uniform to a practically acceptable extent.
以上に説明したように、（イ）ウェハ１の上面と回転部
材である対向部材との間の距離がウニノ・径の５以上に
なると対向部材の影響を受けなくなり、又、（→ウェハ
ｌの下面と静止部材である対向部材との間の距離がウェ
ハ径の５以上になると対向部材の影響を受けなくなる。As explained above, (a) when the distance between the upper surface of the wafer 1 and the rotating member is 5 or more, the effect of the opposing member will no longer be applied; When the distance between the lower surface and the opposing member, which is a stationary member, is 5 or more of the wafer diameter, there will be no influence from the opposing member.
上記（イ）、（ロ）を総合してウェハｌの上面及び下面
をそれぞれ対向部材からウェハ径のＡ以上離間させてそ
の影響を無視し得るようにすると、ウニノ・１の上面の
膜厚とウニ／Ｓｌの下面の膜厚とがはｔ！均等になる。Combining the above (a) and (b), if the upper and lower surfaces of the wafer l are separated from the opposing member by at least A of the wafer diameter so that the influence can be ignored, the film thickness on the upper surface of UNINO-1 The film thickness on the bottom surface of sea urchin/Sl is t! become even.
第６図は前記の２寸法およびｍ寸法をそれぞれウェハ直
径の５以上とし、ウニノ・ｌの回転速度を変えた場合の
レジスト膜厚分布を示し、第６図Ａは回転速［５ＧＯｒ
ｐｍでレジスト液の吹付拡散操作（以下スプレッドと言
う）を行なった後、ａ、ｏｏ。Figure 6 shows the resist film thickness distribution when the above two dimensions and m dimension are each 5 or more of the wafer diameter and the rotational speed of UNINO-L is changed, and Figure 6A shows the rotational speed [5GOr
After spraying and diffusing the resist solution (hereinafter referred to as "spread") at pm, a, oo.
ｒｐｍに増速して膜厚調整を行った場合を示し、第６図
Ｂは回転速度１．００Ｏｒｐｍでスプレッドした後３．
０００ ｒｐｍ Ｋ増速して膜厚調整を行った場合を示
す。これにより、スプレッドを１．Ｇｏｏ ｒｐｍ程度
の比較的高速で行った方が上下両面の膜厚寸法を、均一
化し得ることがわかる。Figure 6B shows the case where the film thickness was adjusted by increasing the rotation speed to 1.00 rpm.
This shows the case where the film thickness was adjusted by increasing the speed by 000 rpm K. This reduces the spread to 1. It can be seen that it is possible to make the film thickness on both the upper and lower surfaces more uniform by performing it at a relatively high speed of about 500 rpm.
＄７図は゛スプレッドの時間を変化させた場合の膜厚変
化を示し、第７図ＡＦｉスプレッド時間３秒間の場合、
第７図Ｂはスプレッド時間１０秒間の場合である。これ
により、スプレッド操作は比較的短時間で済ませた方が
膜厚分布の均一化について好結果が得られることがわか
る。Figure 7 shows the change in film thickness when the spread time is changed. Figure 7 AFi spread time is 3 seconds,
FIG. 7B shows the case where the spread time is 10 seconds. This shows that better results can be obtained in terms of uniformity of the film thickness distribution if the spreading operation is completed in a relatively short time.
以上の各実験結果を活用して構成したレジスト膜均−塗
布装装置の一実施例を第３図Ａについて次に述べる。こ
の塗布装置はスプリング１４ 、１４の付勢力によって
爪９．９の下端部でウニ／Ｓｌを挾持するチャック機構
３と、Ｍ２図について説明したようにこのチャック機構
３を回動布せる手段と、ウェハ１の両面にレジスト液を
吹きつける上ノズル１０及び下ノズル１１とを備えてい
る。そして、木発明を適用してウェハｌとプレー） １
３との間隔寸′法ｔをウェハ１の直径（７５ｍ ）のＡ
よりも若干太きく１８ｍとし、かつ、ウェハｌとカップ
１２の底面Ｅとの間隔寸法ｍをウェハｌの直径のＡより
もかなり大ｅ（２５ｍにしである。また、爪９．９が空
気を攪拌して空気流を乱丁ことを軽減するより、その断
面形状を薄くかつなめらかにすることが望ましい。An embodiment of a resist film uniform coating apparatus constructed by utilizing the above experimental results will now be described with reference to FIG. 3A. This coating device includes a chuck mechanism 3 that clamps the sea urchin/Sl at the lower end of the claw 9.9 by the biasing force of springs 14, 14, and means for rotating this chuck mechanism 3 as explained with reference to Fig. M2. It includes an upper nozzle 10 and a lower nozzle 11 that spray resist liquid onto both sides of the wafer 1. Then, apply the wooden invention and play with the wafer) 1
The distance t from 3 to A of the diameter of wafer 1 (75 m)
The distance m between the wafer l and the bottom surface E of the cup 12 is set to be 25 m, which is slightly larger than the diameter A of the wafer l. It is preferable to make the cross-sectional shape thin and smooth rather than to reduce the disturbance of the air flow by stirring.
本発明装置に以上のように構成しであるので、チャック
引１の爪９’ ＋’ ９にウェハｌを把持させて回転さ
せながらレジスト液をウェハｌの両面に吹きつけてスプ
レッドし、その直後に高速回転（例えば３．００Ｏｒｐ
ｍ ）さセルと、ｇｉ図ｃおよびｇｓ図ＢＫついて説明
した作用により、ウニ／く１の上面および下面それぞれ
にレジスト膜厚が均一となり、その上、上面のレジスト
膜厚と下面のレジスト膜厚とが均等になる。Since the apparatus of the present invention is configured as described above, the wafer 1 is gripped by the claws 9'+' 9 of the chuck puller 1, and while rotating, the resist liquid is sprayed onto both sides of the wafer 1 to spread it, and immediately thereafter high speed rotation (e.g. 3.00 Orp)
m) Due to the effects explained for the cell, gi figure c, and gs figure BK, the resist film thickness becomes uniform on the upper and lower surfaces of the sea urchin/ku 1, and in addition, the resist film thickness on the upper surface and the resist film thickness on the lower surface become uniform. become equal.
本発明に係るレジスト膜均一塗布装置を使用する際は、
第６図及び９７図について説明した作用を活用すべく、
スプレッド操作を比較的高速（例えば１，００Ｏｒｐｍ
）で、比較的短時間（例えば３秒間）行なうと本発明
装置によるレジスト被膜厚さの均一化がいっそう良好と
なる。When using the resist film uniform coating device according to the present invention,
In order to take advantage of the effects explained in FIGS. 6 and 97,
Spread operations at relatively high speeds (e.g. 1,00 Orpm)
) for a relatively short period of time (for example, 3 seconds), the uniformity of the resist film thickness by the apparatus of the present invention becomes even better.
以上説明したように、本発明は、ウェハ両面レジスト塗
布装置において、チャック機構によって把持された状態
のウェハの上、下面と仁れに対向するレジスト塗布装置
の構成部材との間隔寸法を、上記ウェハの直径５以上と
することによジ、ウェハの上面に接する空気の流れ状態
とウェハの下面に接する空気の流れ状態とを同様ならし
めて、ウェハ上面及び下面に同時にレジスト液を塗布し
、両面のレジスト膜厚を均等ならしめることができる。As explained above, in a wafer double-sided resist coating apparatus, the present invention adjusts the distance between the upper and lower surfaces of the wafer held by the chuck mechanism and the constituent members of the resist coating apparatus that face the ridges of the wafer. By making the diameter of the wafer 5 or more, the flow state of the air in contact with the top surface of the wafer and the flow state of the air in contact with the bottom surface of the wafer are made similar, and the resist solution is applied to the top and bottom surfaces of the wafer at the same time. The resist film thickness can be made uniform.
第１図乃至第３図は本発明に係るウニ八両面のレジスト
均一塗布装置の一実施例を示し、第１図Ａはウェハの平
面図、第１図Ｂは同側面図、第２図は一部を断面とした
全体的な正面図、Ｍ３図Ａはチャック機構部分断面正面
図、第３図Ｂは開底２０面図セある。第４図乃至第７図
は本発明装置の作用原理を説明するための図表であり、
第４図Ａｒｉレジスト膜厚測定点を示し、第４図８及び
＃！４図とは第５３図ＡＫ示した２寸法によるレジスト
膜厚の変化を示し、第５図Ａ及び＄５図ＢＦｉ第３図Ａ
に示し九ｍ寸法によるレジスト膜の変化を示し、第６図
Ａ及び＃Ｉ６図Ｂはスプレッド回転速度によるレジスト
膜厚の変化を示し、第７図Ａ及びｊＩ？ｒＩ！ＪＢＦｉ
スルッド時間によるレジスト膜厚の変化を示す。
１・・・ウェハ、３・・・チャック機構、４・・・プー
リ、５・・・タイミングベルト、６・・・回転部、７・
・・案内部材、８・・・油圧シリンダ、９・・・爪、１
０・・・上ノズル、１１・・・下ノズル、■・・・カッ
プ、１３・・・プレート、１４・・・スプリング。
代理人 弁理士 秋 本 正 実第１ Ｚ （Ａ
）
−一一一一一一一一
第２図
第３図（Ｂ）
第４図（Ａ）
１’ｌ プこ個戸ず「
ラ欝り情こイｆｆ１ｊザ【第５図（Ａ）
第５ｖ！ＪＣＢ）第６図い） 第６図（８）1 to 3 show an embodiment of the apparatus for uniformly coating resist on both sides of the wafer according to the present invention, FIG. 1A is a plan view of the wafer, FIG. 1B is a side view of the same, and FIG. FIG. 3A is a partially sectional front view of the entire structure, FIG. 3A is a partial sectional front view of the chuck mechanism, and FIG. 4 to 7 are diagrams for explaining the working principle of the device of the present invention,
Figure 4 shows Ari resist film thickness measurement points, Figure 4 shows 8 and #! Figure 4 shows the change in resist film thickness due to the two dimensions shown in Figure 53AK, Figure 5A and Figure 5BFi, Figure 3A.
Figures 6A and #I6B show changes in the resist film thickness depending on the spread rotation speed, and Figures 7A and #I6 show changes in resist film thickness depending on the 9m dimension. rI! JBFi
It shows the change in resist film thickness due to slud time. DESCRIPTION OF SYMBOLS 1... Wafer, 3... Chuck mechanism, 4... Pulley, 5... Timing belt, 6... Rotating part, 7...
...Guide member, 8...Hydraulic cylinder, 9...Claw, 1
0... Upper nozzle, 11... Lower nozzle, ■... Cup, 13... Plate, 14... Spring. Agent Patent Attorney Tadashi Akimoto Jitsu No. 1 Z (A
) -1111111 Figure 2 Figure 3 (B) Figure 4 (A) 1'l Puko Individual Doors'
The sad feeling ff1j the [Figure 5 (A)
5th v! JCB) Figure 6) Figure 6 (8)
Claims (1)
を備えたチャック機構と、上記チャック機構を支承して
回転させる手段と、繭記チャック磯構によって把持され
たウェハの両面に液状のレジストを吹きつける手段とよ
りなるウェハ両面レジスト塗布装置において、前記チャ
ック機構によって把持された状態のウェハの上、下各面
とこれに対向するレジスト塗布装置の構成部材との間隔
寸法を、上記ウェハの直径の１４以上とすることにより
、ウェハの上面に接する空気の流れ状態とつ◆ エバの下面に接する空気の流れ状態とを同様ならしめた
ことを特徴とするウェハ両面のレジスト膜均一塗布装置
。[Scope of Claims] A chuck mechanism having claws that grip the outer periphery of the wafer by the biasing force of a spring, means for supporting and rotating the chuck mechanism, and a chuck mechanism that grips both sides of the wafer gripped by the chuck rock structure. In a wafer double-sided resist coating device comprising a means for spraying liquid resist, the distance between the upper and lower surfaces of the wafer held by the chuck mechanism and the opposing constituent members of the resist coating device is as follows: The resist film on both sides of the wafer is uniform, characterized in that the diameter of the wafer is 14 or more, so that the flow state of air in contact with the upper surface of the wafer is made similar to the flow state of air in contact with the lower surface of the evaporator. Coating device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19840381A JPS58100425A (en) | 1981-12-11 | 1981-12-11 | Apparatus for uniformly applying resist film on wafer surfaces |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19840381A JPS58100425A (en) | 1981-12-11 | 1981-12-11 | Apparatus for uniformly applying resist film on wafer surfaces |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58100425A true JPS58100425A (en) | 1983-06-15 |
| JPS6258653B2 JPS6258653B2 (en) | 1987-12-07 |
Family
ID=16390544
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19840381A Granted JPS58100425A (en) | 1981-12-11 | 1981-12-11 | Apparatus for uniformly applying resist film on wafer surfaces |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58100425A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS64737A (en) * | 1987-03-27 | 1989-01-05 | Toshiba Corp | Applicator for resist |
| JPS6420725U (en) * | 1987-07-27 | 1989-02-01 | ||
| JPH0283927A (en) * | 1988-09-21 | 1990-03-26 | Shibaura Eng Works Co Ltd | Drying device for glass substrate |
| JPH02146429U (en) * | 1989-05-16 | 1990-12-12 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01290473A (en) * | 1988-05-17 | 1989-11-22 | Nec Corp | Paper-feeding mechanism |
-
1981
- 1981-12-11 JP JP19840381A patent/JPS58100425A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS64737A (en) * | 1987-03-27 | 1989-01-05 | Toshiba Corp | Applicator for resist |
| JPS6420725U (en) * | 1987-07-27 | 1989-02-01 | ||
| JPH0283927A (en) * | 1988-09-21 | 1990-03-26 | Shibaura Eng Works Co Ltd | Drying device for glass substrate |
| JPH02146429U (en) * | 1989-05-16 | 1990-12-12 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6258653B2 (en) | 1987-12-07 |
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