JPS57114239A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57114239A JPS57114239A JP56000580A JP58081A JPS57114239A JP S57114239 A JPS57114239 A JP S57114239A JP 56000580 A JP56000580 A JP 56000580A JP 58081 A JP58081 A JP 58081A JP S57114239 A JPS57114239 A JP S57114239A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- vapor
- grown
- compressed state
- dampproof
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To improve the dampproof property for the subject semiconductor device by a method wherein an oxide film is grown on the surface of the semiconductor element having a metal wiring at the growing rate of 200Angstrom /min or below under a compressed state using a vapor growth method. CONSTITUTION:A high density phosphorus glass layer 16 is grown in vapor- phase on the substrate 11 whereon N-channel MOS structure was formed, a contact hole is opened, and an Al wiring 5 is provided. Then, an SiO2 vapor- growth layer 17 is formed by introducing silane and oxygen under the compressed state of 0.1-0.4 Torr at the temperature of 400 deg.C. The growing rate for the above is 100Angstrom /min. Through these procedures, the dampproof for the subject semiconductor device can be improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56000580A JPS57114239A (en) | 1981-01-06 | 1981-01-06 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56000580A JPS57114239A (en) | 1981-01-06 | 1981-01-06 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57114239A true JPS57114239A (en) | 1982-07-16 |
Family
ID=11477646
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56000580A Pending JPS57114239A (en) | 1981-01-06 | 1981-01-06 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57114239A (en) |
-
1981
- 1981-01-06 JP JP56000580A patent/JPS57114239A/en active Pending
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