JPS57114239A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57114239A
JPS57114239A JP56000580A JP58081A JPS57114239A JP S57114239 A JPS57114239 A JP S57114239A JP 56000580 A JP56000580 A JP 56000580A JP 58081 A JP58081 A JP 58081A JP S57114239 A JPS57114239 A JP S57114239A
Authority
JP
Japan
Prior art keywords
semiconductor device
vapor
grown
compressed state
dampproof
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56000580A
Other languages
Japanese (ja)
Inventor
Seiichiro Takabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56000580A priority Critical patent/JPS57114239A/en
Publication of JPS57114239A publication Critical patent/JPS57114239A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To improve the dampproof property for the subject semiconductor device by a method wherein an oxide film is grown on the surface of the semiconductor element having a metal wiring at the growing rate of 200Angstrom /min or below under a compressed state using a vapor growth method. CONSTITUTION:A high density phosphorus glass layer 16 is grown in vapor- phase on the substrate 11 whereon N-channel MOS structure was formed, a contact hole is opened, and an Al wiring 5 is provided. Then, an SiO2 vapor- growth layer 17 is formed by introducing silane and oxygen under the compressed state of 0.1-0.4 Torr at the temperature of 400 deg.C. The growing rate for the above is 100Angstrom /min. Through these procedures, the dampproof for the subject semiconductor device can be improved.
JP56000580A 1981-01-06 1981-01-06 Manufacture of semiconductor device Pending JPS57114239A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56000580A JPS57114239A (en) 1981-01-06 1981-01-06 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56000580A JPS57114239A (en) 1981-01-06 1981-01-06 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57114239A true JPS57114239A (en) 1982-07-16

Family

ID=11477646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56000580A Pending JPS57114239A (en) 1981-01-06 1981-01-06 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57114239A (en)

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