JPS57112073A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57112073A JPS57112073A JP18905280A JP18905280A JPS57112073A JP S57112073 A JPS57112073 A JP S57112073A JP 18905280 A JP18905280 A JP 18905280A JP 18905280 A JP18905280 A JP 18905280A JP S57112073 A JPS57112073 A JP S57112073A
- Authority
- JP
- Japan
- Prior art keywords
- assisting
- turn
- electrode
- gate
- thyristor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000969 carrier Substances 0.000 abstract 1
- 238000006073 displacement reaction Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000011084 recovery Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To reduce the turn-off time of a gate assisting turn-off thyristor and avoid the turn-off failure by a method wherein an assisting electrode is provided also to a circumference of an emitter region on a base layer where a gate electrode is formed. CONSTITUTION:In addition to two assisting electrodes 8, 9 provided to a gate assisting turn-off thyristor (GATT) of conventional composition, the third assisting electrode 14 is provided to the outside of a n type emitter region 4. The assisting electrode 14 is connected to the assisting electrode 9 and is connected to a gate electrode 7 through a by-pass diode 12, so that the reverse recovery current by turn-off and the displacement current by the rise of off-voltage can be introduced into the gate electrode 7. By this assisting electrode 14, remaining accumulated carriers especially near a junction J2 along a bevel surface can be absorbed and prevented from flowing into a junction J3, so that the turn-off time can be reduced and the element is protected from damage by the turn-off failure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18905280A JPS57112073A (en) | 1980-12-27 | 1980-12-27 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18905280A JPS57112073A (en) | 1980-12-27 | 1980-12-27 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57112073A true JPS57112073A (en) | 1982-07-12 |
Family
ID=16234481
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18905280A Pending JPS57112073A (en) | 1980-12-27 | 1980-12-27 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57112073A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5049965A (en) * | 1987-11-20 | 1991-09-17 | Siemens Aktiengesellschaft | Thyristor having adjustable breakover voltage and method of manufacture |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5336999A (en) * | 1976-09-16 | 1978-04-05 | Rheinmetall Gmbh | Propulsive powder explosive |
JPS541636A (en) * | 1977-06-06 | 1979-01-08 | Ricoh Co Ltd | Electrophotographic developing device |
JPS556304A (en) * | 1978-06-28 | 1980-01-17 | Fuji Xerox Co Ltd | Thin sheet material stripper |
-
1980
- 1980-12-27 JP JP18905280A patent/JPS57112073A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5336999A (en) * | 1976-09-16 | 1978-04-05 | Rheinmetall Gmbh | Propulsive powder explosive |
JPS541636A (en) * | 1977-06-06 | 1979-01-08 | Ricoh Co Ltd | Electrophotographic developing device |
JPS556304A (en) * | 1978-06-28 | 1980-01-17 | Fuji Xerox Co Ltd | Thin sheet material stripper |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5049965A (en) * | 1987-11-20 | 1991-09-17 | Siemens Aktiengesellschaft | Thyristor having adjustable breakover voltage and method of manufacture |
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