JPS57112073A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57112073A
JPS57112073A JP18905280A JP18905280A JPS57112073A JP S57112073 A JPS57112073 A JP S57112073A JP 18905280 A JP18905280 A JP 18905280A JP 18905280 A JP18905280 A JP 18905280A JP S57112073 A JPS57112073 A JP S57112073A
Authority
JP
Japan
Prior art keywords
assisting
turn
electrode
gate
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18905280A
Other languages
Japanese (ja)
Inventor
Kazuo Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP18905280A priority Critical patent/JPS57112073A/en
Publication of JPS57112073A publication Critical patent/JPS57112073A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To reduce the turn-off time of a gate assisting turn-off thyristor and avoid the turn-off failure by a method wherein an assisting electrode is provided also to a circumference of an emitter region on a base layer where a gate electrode is formed. CONSTITUTION:In addition to two assisting electrodes 8, 9 provided to a gate assisting turn-off thyristor (GATT) of conventional composition, the third assisting electrode 14 is provided to the outside of a n type emitter region 4. The assisting electrode 14 is connected to the assisting electrode 9 and is connected to a gate electrode 7 through a by-pass diode 12, so that the reverse recovery current by turn-off and the displacement current by the rise of off-voltage can be introduced into the gate electrode 7. By this assisting electrode 14, remaining accumulated carriers especially near a junction J2 along a bevel surface can be absorbed and prevented from flowing into a junction J3, so that the turn-off time can be reduced and the element is protected from damage by the turn-off failure.
JP18905280A 1980-12-27 1980-12-27 Semiconductor device Pending JPS57112073A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18905280A JPS57112073A (en) 1980-12-27 1980-12-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18905280A JPS57112073A (en) 1980-12-27 1980-12-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57112073A true JPS57112073A (en) 1982-07-12

Family

ID=16234481

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18905280A Pending JPS57112073A (en) 1980-12-27 1980-12-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57112073A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5049965A (en) * 1987-11-20 1991-09-17 Siemens Aktiengesellschaft Thyristor having adjustable breakover voltage and method of manufacture

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5336999A (en) * 1976-09-16 1978-04-05 Rheinmetall Gmbh Propulsive powder explosive
JPS541636A (en) * 1977-06-06 1979-01-08 Ricoh Co Ltd Electrophotographic developing device
JPS556304A (en) * 1978-06-28 1980-01-17 Fuji Xerox Co Ltd Thin sheet material stripper

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5336999A (en) * 1976-09-16 1978-04-05 Rheinmetall Gmbh Propulsive powder explosive
JPS541636A (en) * 1977-06-06 1979-01-08 Ricoh Co Ltd Electrophotographic developing device
JPS556304A (en) * 1978-06-28 1980-01-17 Fuji Xerox Co Ltd Thin sheet material stripper

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5049965A (en) * 1987-11-20 1991-09-17 Siemens Aktiengesellschaft Thyristor having adjustable breakover voltage and method of manufacture

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