JPS5640309A - Extra-high frequency transistor amplifying unit - Google Patents

Extra-high frequency transistor amplifying unit

Info

Publication number
JPS5640309A
JPS5640309A JP11647879A JP11647879A JPS5640309A JP S5640309 A JPS5640309 A JP S5640309A JP 11647879 A JP11647879 A JP 11647879A JP 11647879 A JP11647879 A JP 11647879A JP S5640309 A JPS5640309 A JP S5640309A
Authority
JP
Japan
Prior art keywords
signal
matching circuit
varactor diode
microwave
gain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11647879A
Other languages
Japanese (ja)
Inventor
Yoichiro Takayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11647879A priority Critical patent/JPS5640309A/en
Publication of JPS5640309A publication Critical patent/JPS5640309A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • H03F1/3276—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits using the nonlinearity inherent to components, e.g. a diode

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microwave Amplifiers (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To simplify constitution and make a unit small-size, by incorporating a variable impedance element into the matching circuit of the transistor and by controlling the impedance matching circuit to compensate the nonlinear property of the transistor. CONSTITUTION:The microwave signal which was subjected to amplitude modulation is input to input terminal 7 of the amplifier, and a part of this signal is taken out by directional coupler 8 and is subjected to envelope detection amplification by detecting circuit 9. Most of the microwave signal is sent to FET1 through capacitor 11 for DC cut, varactor diode 6, and impedance matching circuit 2. Further, the detected and amplified signal is superposed to DC backward bias voltage VB and is applied to varactor diode 6. Then, varactor diode 6 is controlled by amplitude change of microwave input power, and only the gain is lowered in a small signal level, and the gain in the high output level is held, so that linearity of the whole can be improved.
JP11647879A 1979-09-11 1979-09-11 Extra-high frequency transistor amplifying unit Pending JPS5640309A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11647879A JPS5640309A (en) 1979-09-11 1979-09-11 Extra-high frequency transistor amplifying unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11647879A JPS5640309A (en) 1979-09-11 1979-09-11 Extra-high frequency transistor amplifying unit

Publications (1)

Publication Number Publication Date
JPS5640309A true JPS5640309A (en) 1981-04-16

Family

ID=14688092

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11647879A Pending JPS5640309A (en) 1979-09-11 1979-09-11 Extra-high frequency transistor amplifying unit

Country Status (1)

Country Link
JP (1) JPS5640309A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03274902A (en) * 1990-03-26 1991-12-05 Mitsubishi Electric Corp Semiconductor device
US6166604A (en) * 1998-06-18 2000-12-26 Nec Corporation Semiconductor amplifier with compensated passing gain characteristic and passing phase characteristic
KR100977423B1 (en) 2006-11-15 2010-08-24 닛본 덴끼 가부시끼가이샤 Amplifier
JP2012100037A (en) * 2010-11-01 2012-05-24 Fujitsu Ltd Phase compensation circuit for amplifier, and amplification circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3624534A (en) * 1969-02-20 1971-11-30 English Electric Valve Co Ltd A uhf klystron amplifier having a substantially linear input/output characteristic

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3624534A (en) * 1969-02-20 1971-11-30 English Electric Valve Co Ltd A uhf klystron amplifier having a substantially linear input/output characteristic

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03274902A (en) * 1990-03-26 1991-12-05 Mitsubishi Electric Corp Semiconductor device
US6166604A (en) * 1998-06-18 2000-12-26 Nec Corporation Semiconductor amplifier with compensated passing gain characteristic and passing phase characteristic
KR100977423B1 (en) 2006-11-15 2010-08-24 닛본 덴끼 가부시끼가이샤 Amplifier
JP2012100037A (en) * 2010-11-01 2012-05-24 Fujitsu Ltd Phase compensation circuit for amplifier, and amplification circuit

Similar Documents

Publication Publication Date Title
US4507619A (en) Amplifier with signal-dependent voltage supply source
GB1327132A (en) Power amplifying device for amplitude modulated high frequency signals
GB1172366A (en) Transistor Circuits
GB1512466A (en) Oscillators
GB1140668A (en) Interstage coupling circuit for transistor amplifiers
GB1017759A (en) Improvements in or relating to variable gain transistor amplifiers
JPS5640309A (en) Extra-high frequency transistor amplifying unit
ES429228A1 (en) Feedback amplifier
GB988369A (en) Improvements in or relating to power amplifiers
GB1101488A (en) Improvements in and relating to electric signal amplifiers
EP0282350A3 (en) High frequency power amplifier having heterojunction bipolar transistor
JPS5516527A (en) Ultra-high frequency amplifier
US3443239A (en) Am amplifier circuit
JPS5546672A (en) Transistor amplifier circuit
EP0182664A3 (en) Low noise oscillator
US3533004A (en) Feed forward amplifier
JPS55138905A (en) Bias circuit of amplifier
JPS5599812A (en) Broad band balanced amplifier having gain selection function
GB876042A (en) Improvements in or relating to transistor circuit arrangements for demodulating and amplifying signals
JPS55115707A (en) Push pull amplifier
JPS55158716A (en) Amplitude limiter
JPS5550714A (en) Oscillation and amplifier unit
US3582801A (en) Voltage amplifying circuit
GB944956A (en) Improvements in or relating to transistor amplifiers
SU1584076A1 (en) Voltage repeater