JPS56112728A - Manufacture of exposure mask - Google Patents
Manufacture of exposure maskInfo
- Publication number
- JPS56112728A JPS56112728A JP1487580A JP1487580A JPS56112728A JP S56112728 A JPS56112728 A JP S56112728A JP 1487580 A JP1487580 A JP 1487580A JP 1487580 A JP1487580 A JP 1487580A JP S56112728 A JPS56112728 A JP S56112728A
- Authority
- JP
- Japan
- Prior art keywords
- membrane
- pattern
- ray
- absorbing material
- exposure mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000012528 membrane Substances 0.000 abstract 5
- 239000011358 absorbing material Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000004642 Polyimide Substances 0.000 abstract 1
- 239000006096 absorbing agent Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 229920001721 polyimide Polymers 0.000 abstract 1
- 229920006395 saturated elastomer Polymers 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To prevent the deformation of an X-ray absorber or membrane by irradiating beforehand a mask material before the pattern transfer treatment with the X-ray when the pattern is formed with the X-ray absorbing material on a thin membrane. CONSTITUTION:The membrane 2 such as, polyimide, Praylene or SiO2 is formed on an Si wafer 4, the X-ray is irradiated thereto, and the modification of the membrane 2 is saturated beforehand. The X-ray absorbing material 3 such as Au, Si or the like is then evaporated thereon, and the pattern of desired shape is formed. Further, the Si wafer is selectively etched and removed to form a frame, and the exposure mask is thus formed. Since the membrane or X-ray absorbing material does not modify at the time of transferring the pattern with the above configuration, highly precise pattern can be formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1487580A JPS56112728A (en) | 1980-02-12 | 1980-02-12 | Manufacture of exposure mask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1487580A JPS56112728A (en) | 1980-02-12 | 1980-02-12 | Manufacture of exposure mask |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56112728A true JPS56112728A (en) | 1981-09-05 |
Family
ID=11873181
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1487580A Pending JPS56112728A (en) | 1980-02-12 | 1980-02-12 | Manufacture of exposure mask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56112728A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4606803A (en) * | 1983-11-02 | 1986-08-19 | U.S. Philips Corporation | Method of manufacturing a mask for the production of patterns in lacquer layers by means of X-ray lithography |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5212002A (en) * | 1975-06-30 | 1977-01-29 | Ibm | Method of high aspect ratio mask |
JPS53146623A (en) * | 1977-05-26 | 1978-12-20 | Nec Corp | Photoetching mask |
-
1980
- 1980-02-12 JP JP1487580A patent/JPS56112728A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5212002A (en) * | 1975-06-30 | 1977-01-29 | Ibm | Method of high aspect ratio mask |
JPS53146623A (en) * | 1977-05-26 | 1978-12-20 | Nec Corp | Photoetching mask |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4606803A (en) * | 1983-11-02 | 1986-08-19 | U.S. Philips Corporation | Method of manufacturing a mask for the production of patterns in lacquer layers by means of X-ray lithography |
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