JPS5475278A - Heat resistance measuring method for impatt diode - Google Patents
Heat resistance measuring method for impatt diodeInfo
- Publication number
- JPS5475278A JPS5475278A JP14309677A JP14309677A JPS5475278A JP S5475278 A JPS5475278 A JP S5475278A JP 14309677 A JP14309677 A JP 14309677A JP 14309677 A JP14309677 A JP 14309677A JP S5475278 A JPS5475278 A JP S5475278A
- Authority
- JP
- Japan
- Prior art keywords
- impatt diode
- space charge
- temperature
- current
- heat resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
PURPOSE: To secure the proper evaluation for the heat resistance of the impatt diode whose depletion layer's width varies by the temperature and current.
CONSTITUTION: The lead-type GaAs impatt diode is used to obtain the backward voltage and the current property group by maintaining the constant levels for various temperatures. According to this property curve group, the differential resistance value is obtained for temperatures T1WT3 when the backward current features fixed value I0, and this obtained value is equivalent to the space charge resistance. Thus, the space charge resistance characteristics can be obtained at I0. Here, the space charge resistance is measured when reverse current I0 flowing DC input is applied to the impatt diode, so temperature T of the impatt diode is obtained based on the temperature-to-space charge resistance characteristics. Then heat resistance R = (T-T0)/V0I0 can be obtained according to room temperature T plus DC input power I0V0. As a result, R can be measured accurately even though the depletion layer has a big change.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14309677A JPS5475278A (en) | 1977-11-28 | 1977-11-28 | Heat resistance measuring method for impatt diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14309677A JPS5475278A (en) | 1977-11-28 | 1977-11-28 | Heat resistance measuring method for impatt diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5475278A true JPS5475278A (en) | 1979-06-15 |
Family
ID=15330808
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14309677A Pending JPS5475278A (en) | 1977-11-28 | 1977-11-28 | Heat resistance measuring method for impatt diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5475278A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103869233A (en) * | 2014-04-01 | 2014-06-18 | 北京工业大学 | Method for measuring thin-film heat resistance inside semi-conductor components |
CN111693840A (en) * | 2020-06-18 | 2020-09-22 | 山东宝乘电子有限公司 | Method for testing thermal resistance of Schottky diode by utilizing reverse characteristic |
-
1977
- 1977-11-28 JP JP14309677A patent/JPS5475278A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103869233A (en) * | 2014-04-01 | 2014-06-18 | 北京工业大学 | Method for measuring thin-film heat resistance inside semi-conductor components |
CN111693840A (en) * | 2020-06-18 | 2020-09-22 | 山东宝乘电子有限公司 | Method for testing thermal resistance of Schottky diode by utilizing reverse characteristic |
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