JPS5364699A - Extending method for single orientation zone of single crystal - Google Patents
Extending method for single orientation zone of single crystalInfo
- Publication number
- JPS5364699A JPS5364699A JP13951676A JP13951676A JPS5364699A JP S5364699 A JPS5364699 A JP S5364699A JP 13951676 A JP13951676 A JP 13951676A JP 13951676 A JP13951676 A JP 13951676A JP S5364699 A JPS5364699 A JP S5364699A
- Authority
- JP
- Japan
- Prior art keywords
- orientation zone
- single crystal
- extending method
- make
- single orientation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
PURPOSE: To make a Z-cutting process unnecessary and thus make it possible to extend the single orientation zone by providing first and second electrodes opposite each other on the Z axis of a LiTaO3 single crystal pulled up in the direction of the X axix by Czochralski method and then applying a voltage.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51139516A JPS5932438B2 (en) | 1976-11-22 | 1976-11-22 | Single crystal single domainization method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51139516A JPS5932438B2 (en) | 1976-11-22 | 1976-11-22 | Single crystal single domainization method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5364699A true JPS5364699A (en) | 1978-06-09 |
JPS5932438B2 JPS5932438B2 (en) | 1984-08-08 |
Family
ID=15247107
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51139516A Expired JPS5932438B2 (en) | 1976-11-22 | 1976-11-22 | Single crystal single domainization method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5932438B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5849696A (en) * | 1981-09-19 | 1983-03-23 | Toshiba Corp | Single domain formation of lithium tantalate single crystal |
JPS5899200A (en) * | 1981-12-07 | 1983-06-13 | Toshiba Corp | Forming method for single crystal of lithium tantalate into single domain |
JPS61137000A (en) * | 1984-12-05 | 1986-06-24 | Shin Etsu Chem Co Ltd | Method for forming single domain in lithium tantalate single crystal |
-
1976
- 1976-11-22 JP JP51139516A patent/JPS5932438B2/en not_active Expired
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5849696A (en) * | 1981-09-19 | 1983-03-23 | Toshiba Corp | Single domain formation of lithium tantalate single crystal |
JPS6234718B2 (en) * | 1981-09-19 | 1987-07-28 | Tokyo Shibaura Electric Co | |
JPS5899200A (en) * | 1981-12-07 | 1983-06-13 | Toshiba Corp | Forming method for single crystal of lithium tantalate into single domain |
JPS6234719B2 (en) * | 1981-12-07 | 1987-07-28 | Tokyo Shibaura Electric Co | |
JPS61137000A (en) * | 1984-12-05 | 1986-06-24 | Shin Etsu Chem Co Ltd | Method for forming single domain in lithium tantalate single crystal |
JPH0416438B2 (en) * | 1984-12-05 | 1992-03-24 | Shinetsu Chem Ind Co |
Also Published As
Publication number | Publication date |
---|---|
JPS5932438B2 (en) | 1984-08-08 |
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