JPS52132685A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS52132685A JPS52132685A JP4929876A JP4929876A JPS52132685A JP S52132685 A JPS52132685 A JP S52132685A JP 4929876 A JP4929876 A JP 4929876A JP 4929876 A JP4929876 A JP 4929876A JP S52132685 A JPS52132685 A JP S52132685A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- semiconductor integrated
- circuit device
- gate
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Protection Of Static Devices (AREA)
- Amplifiers (AREA)
Abstract
PURPOSE:A circuit consisting of a resistance and diodes is provided on this side of the gate of IGFET for pull-up resistance, thereby protecting the gate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4929876A JPS52132685A (en) | 1976-04-28 | 1976-04-28 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4929876A JPS52132685A (en) | 1976-04-28 | 1976-04-28 | Semiconductor integrated circuit device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52132685A true JPS52132685A (en) | 1977-11-07 |
JPS614197B2 JPS614197B2 (en) | 1986-02-07 |
Family
ID=12827007
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4929876A Granted JPS52132685A (en) | 1976-04-28 | 1976-04-28 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52132685A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58159363A (en) * | 1982-03-17 | 1983-09-21 | Nec Corp | Input/output protecting device for semiconductor integrated circuit |
US6118305A (en) * | 1996-09-12 | 2000-09-12 | Nec Corporation | Semiconductor integrated circuit capable of preventing breakdown of a gate oxide film |
JP2005204297A (en) * | 2003-12-18 | 2005-07-28 | Matsushita Electric Ind Co Ltd | Amplifying device with bias circuit |
WO2008053857A1 (en) * | 2006-10-31 | 2008-05-08 | Panasonic Corporation | Amplification device |
-
1976
- 1976-04-28 JP JP4929876A patent/JPS52132685A/en active Granted
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58159363A (en) * | 1982-03-17 | 1983-09-21 | Nec Corp | Input/output protecting device for semiconductor integrated circuit |
JPH0312472B2 (en) * | 1982-03-17 | 1991-02-20 | Nippon Electric Co | |
US6118305A (en) * | 1996-09-12 | 2000-09-12 | Nec Corporation | Semiconductor integrated circuit capable of preventing breakdown of a gate oxide film |
JP2005204297A (en) * | 2003-12-18 | 2005-07-28 | Matsushita Electric Ind Co Ltd | Amplifying device with bias circuit |
WO2008053857A1 (en) * | 2006-10-31 | 2008-05-08 | Panasonic Corporation | Amplification device |
US7924090B2 (en) | 2006-10-31 | 2011-04-12 | Panasonic Corporation | Amplifying device |
Also Published As
Publication number | Publication date |
---|---|
JPS614197B2 (en) | 1986-02-07 |
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