JPH11509365A - 改善されたスイッチオンオフ特性を有するサイリスタ及びその製造方法 - Google Patents
改善されたスイッチオンオフ特性を有するサイリスタ及びその製造方法Info
- Publication number
- JPH11509365A JPH11509365A JP9504689A JP50468997A JPH11509365A JP H11509365 A JPH11509365 A JP H11509365A JP 9504689 A JP9504689 A JP 9504689A JP 50468997 A JP50468997 A JP 50468997A JP H11509365 A JPH11509365 A JP H11509365A
- Authority
- JP
- Japan
- Prior art keywords
- thyristor
- base
- zone
- anode
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000002800 charge carrier Substances 0.000 claims abstract description 14
- 150000002371 helium Chemical class 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 14
- 229910052734 helium Inorganic materials 0.000 claims description 11
- 239000001307 helium Substances 0.000 claims description 11
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 11
- 230000006798 recombination Effects 0.000 abstract description 2
- 238000005215 recombination Methods 0.000 abstract description 2
- 230000000903 blocking effect Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000003902 lesion Effects 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66363—Thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/1016—Anode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.陰極端子(K)と接続されているn−エミッタ(1)と、ゲート端子(G) と接続されているp−ベース(2)と、n−ベース(3,3′)及び陽極端子( A)と接続されているp−エミッタ(4)とを有しているサイリスタにおいて、 n−ベースは、p−エミッタとn−ベースとの間の陽極側のpn−接合部(PN )の近傍内に、それ以外のn−ベースに比して低減された荷電担体寿命のゾーン (ZHR)を有しており、該ゾーン(ZHR)は、サイリスタの全面に亘って延 在しており、その際、当該ゾーンと陽極側のpn−接合部(PN)との間の距離 (E)は、実質的にどの箇所でも同じ大きさであることを特徴とするサイリスタ 。 2.低減された荷電担体寿命のゾーン(ZHR)と陽極側のpn−接合部との間 の距離(E)は、0〜40μmの大きさである請求項1記載のサイリスタ。 3.n−ベース(3,3′)は、陽極側のpn−接合部(PN)側に、それ以外 のn−ベース(3)よりも高くドーピングされたn−阻止ゾーン(3′)を有し ている請求項1又は2記載のサイリスタ。 4.陽極側に、プロトン(p+)乃至ヘリウム(He++)を全面的に照射する請 求項1〜3迄の何れか1記載のサイリスタの製造方法。 5.5〜10MeVのエネルギのヘリウム核で照射し、照射線量を4〜1010原 子/cm3にする請求項4記載の方法。 6.プロトン乃至ヘリウム核を照射した後、形成された障害箇所の安定化のため に、温度調節する請求項4記載の方法。 7.200〜250℃で10〜30時間の間、温度調節を行う請求項5記載の方 法。 8.付加的に、陰極乃至陽極側の電子照射によって、プロトン乃至ヘリウム核の 照射に比べて比較的弱く、且つ、垂直方向に均一に、荷電担体の寿命を低下させ る請求項4〜7迄の何れか1記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19524161.4 | 1995-07-03 | ||
DE19524161 | 1995-07-03 | ||
PCT/DE1996/001052 WO1997002603A1 (de) | 1995-07-03 | 1996-06-13 | Thyristor mit schicht reduzierter ladungsträgerlebensdauer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH11509365A true JPH11509365A (ja) | 1999-08-17 |
JP3869466B2 JP3869466B2 (ja) | 2007-01-17 |
Family
ID=7765866
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50468997A Expired - Lifetime JP3869466B2 (ja) | 1995-07-03 | 1996-06-13 | 改善されたスイッチオンオフ特性を有するサイリスタ及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0836749B1 (ja) |
JP (1) | JP3869466B2 (ja) |
DE (1) | DE59605827D1 (ja) |
WO (1) | WO1997002603A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19649800A1 (de) * | 1996-12-02 | 1998-06-04 | Asea Brown Boveri | Verfahren zur Herstellung eines Abschaltthyristors mit einer anodenseitigen Stopschicht und einem transparenten Anodenemitter |
EP1157424B1 (de) | 1999-02-22 | 2008-09-17 | Infineon Technologies AG | Verfahren zum einstellen der durchbruchspannung eines thyristors |
DE10220489A1 (de) * | 2002-05-07 | 2003-12-04 | Net Mobile Ag | Adressierverfahren |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4056408A (en) * | 1976-03-17 | 1977-11-01 | Westinghouse Electric Corporation | Reducing the switching time of semiconductor devices by nuclear irradiation |
JPS649658A (en) * | 1987-07-01 | 1989-01-12 | Mitsubishi Electric Corp | Gto thyristor |
EP0343369A1 (de) * | 1988-05-19 | 1989-11-29 | Siemens Aktiengesellschaft | Verfahren zum Herstellen eines Thyristors |
JP3495055B2 (ja) * | 1993-03-18 | 2004-02-09 | 富士通株式会社 | 優先接続処理方式 |
JP3281145B2 (ja) * | 1993-10-28 | 2002-05-13 | 株式会社東芝 | Gtoサイリスタ |
-
1996
- 1996-06-13 WO PCT/DE1996/001052 patent/WO1997002603A1/de active IP Right Grant
- 1996-06-13 EP EP96917345A patent/EP0836749B1/de not_active Expired - Lifetime
- 1996-06-13 JP JP50468997A patent/JP3869466B2/ja not_active Expired - Lifetime
- 1996-06-13 DE DE59605827T patent/DE59605827D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
WO1997002603A1 (de) | 1997-01-23 |
JP3869466B2 (ja) | 2007-01-17 |
EP0836749B1 (de) | 2000-08-30 |
DE59605827D1 (de) | 2000-10-05 |
EP0836749A1 (de) | 1998-04-22 |
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