JPH11154735A - Substrate voltage supply circuit for solid-state imaging element - Google Patents
Substrate voltage supply circuit for solid-state imaging elementInfo
- Publication number
- JPH11154735A JPH11154735A JP9320764A JP32076497A JPH11154735A JP H11154735 A JPH11154735 A JP H11154735A JP 9320764 A JP9320764 A JP 9320764A JP 32076497 A JP32076497 A JP 32076497A JP H11154735 A JPH11154735 A JP H11154735A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- substrate voltage
- state imaging
- resistor
- fuse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Design And Manufacture Of Integrated Circuits (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、複数の抵抗からな
る合成抵抗のそれぞれの抵抗に並列接続したヒューズ抵
抗を選択的に切断することで、所望の合成抵抗値を得て
基板電圧を無調整化する固体撮像素子の基板電圧供給回
路に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of selectively cutting fuse resistors connected in parallel to respective resistors of a plurality of resistors to obtain a desired combined resistance value and to adjust the substrate voltage without adjustment. The present invention relates to a substrate voltage supply circuit of a solid-state imaging device to be developed.
【０００２】[0002]
【従来の技術】固体撮像素子では、多大光量の入射によ
りオーバーフローが起こる。このオーバーフロー光量時
の出力最小値は、半導体基板の基板電圧に応じて変化す
る。出力最小値は、基板電圧に対して単調減少するが、
その変化のカーブは固体撮像素子毎に異なる。従来で
は、出力最小値が規格値に一致するように基板電圧を設
定し、その固有の基板電圧をそれぞれの固体撮像素子に
外部から印加していた。2. Description of the Related Art In a solid-state image pickup device, overflow occurs when a large amount of light enters. The minimum output value at the time of the overflow light quantity changes according to the substrate voltage of the semiconductor substrate. The output minimum decreases monotonically with the substrate voltage,
The curve of the change differs for each solid-state imaging device. Conventionally, the substrate voltage is set so that the minimum output value matches the standard value, and the unique substrate voltage is externally applied to each solid-state imaging device.
【０００３】これに対し、現在では、外部から印加する
基板電圧を無調整化した固体撮像素子が提供されてい
る。この固体撮像素子では、図２に示すように複数の抵
抗ｒによる分圧回路を固体撮像素子の内部に設け、個々
又は一部の抵抗ｒに並列接続した小抵抗値のヒューズ抵
抗１を一つ又は任意の組合せで切断することでこの合成
抵抗Ｒ1 、Ｒ2 の値を変え、素子３への基板電圧ＶSUB
を以下に示す式１により求められる値に設定すること
で、無調整化を可能にしていた。 ＶSUB ＝電源電圧（１５Ｖ）×Ｒ2 ／（Ｒ1 ＋Ｒ2 ）・・・式１On the other hand, at present, a solid-state imaging device in which the substrate voltage applied from the outside is not adjusted is provided. In this solid-state imaging device, as shown in FIG. 2, a voltage dividing circuit using a plurality of resistors r is provided inside the solid-state imaging device, and one or a small resistance fuse resistor 1 connected in parallel to each or some of the resistors r is provided. Alternatively, the values of the combined resistors R 1 and R 2 are changed by cutting in an arbitrary combination, and the substrate voltage V SUB to the element 3 is changed.
Is set to a value determined by the following equation 1, thereby making it possible to eliminate the need for adjustment. V SUB = power supply voltage (15V) × R 2 / (R 1 + R 2 ) formula 1
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上述し
た従来の固体撮像素子の基板電圧供給回路では、固体撮
像素子毎に、抵抗ｒと並列接続した不特定のヒューズ抵
抗１を切断して調整を行うため、切断による調整が行わ
れたか否かを確認するには、もう一度、一つ一つのヒュ
ーズ抵抗１の端子５に電圧を加えなければならず、チェ
ックに非常に時間のかかる問題があった。また、チェッ
クの都度、固体撮像素子に電圧を印加するため、固体撮
像素子の特性を変えてしまう虞れがあった。本発明は上
記状況に鑑みてなされたもので、一つ一つのヒューズ抵
抗を確認せずに切断による調整が行われたか否かを確認
できるとともに、チェックのための電圧を固体撮像素子
に印加せずに済む固体撮像素子の基板電圧供給回路を提
供し、検査時間の短縮及び素子特性の変化防止を図るこ
とを目的とする。However, in the above-described conventional substrate voltage supply circuit for a solid-state imaging device, adjustment is performed for each solid-state imaging device by cutting an unspecified fuse resistor 1 connected in parallel with a resistor r. Therefore, in order to confirm whether or not the adjustment by cutting has been performed, a voltage must be applied to the terminal 5 of each fuse resistor 1 again, and there is a problem that it takes a very long time to check. Further, since a voltage is applied to the solid-state imaging device every time the check is performed, there is a possibility that the characteristics of the solid-state imaging device may be changed. The present invention has been made in view of the above circumstances, and it is possible to confirm whether or not adjustment by disconnection has been performed without confirming each fuse resistance, and to apply a voltage for checking to the solid-state imaging device. It is an object of the present invention to provide a substrate voltage supply circuit for a solid-state imaging device that does not need to be provided, thereby shortening an inspection time and preventing a change in device characteristics.
【０００５】[0005]
【課題を解決するための手段】上記目的を達成するため
の本発明に係る固体撮像素子の基板電圧供給回路の構成
は、複数の抵抗からなる合成抵抗と、それぞれの前記抵
抗に並列接続したヒューズ抵抗とを内蔵し、任意のヒュ
ーズ抵抗を切断することにより所望の合成抵抗値を得て
基板電圧を所定の値に設定する固体撮像素子の基板電圧
供給回路において、前記ヒューズ抵抗と同一のヒューズ
抵抗を前記抵抗に並列接続せずに単独に設けて内蔵した
ことを特徴とするものである。To achieve the above object, a substrate voltage supply circuit for a solid-state imaging device according to the present invention comprises a composite resistor comprising a plurality of resistors and a fuse connected in parallel to each of the resistors. In a substrate voltage supply circuit of a solid-state imaging device, which incorporates a resistor and cuts an arbitrary fuse resistor to obtain a desired combined resistance value and sets a substrate voltage to a predetermined value, the same fuse resistor as the fuse resistor is used. Are provided independently and connected to the resistor without being connected in parallel.
【０００６】この固体撮像素子の基板電圧供給回路で
は、基板電圧を設定する際、ヒューズ抵抗を切断した後
に、単独に設けたヒューズ抵抗も同時に切断しておく。
これにより、ヒューズ抵抗の切断による調整が行われた
か否かは、この単独に設けた一つのヒューズ抵抗の切断
のみを確認すればよいことになる。また、電圧を印加し
て切断をチェックする場合においても、この切断チェッ
ク用のヒューズ抵抗が単独に設けられているため、固体
撮像素子にチェックのための電圧が印加されることがな
くなる。In the substrate voltage supply circuit of the solid-state imaging device, when setting the substrate voltage, the fuse resistance provided separately is cut off at the same time after the fuse resistance is cut off.
As a result, whether or not the adjustment by cutting the fuse resistor has been performed is determined by checking only the cut of the single fuse resistor provided independently. In addition, even when a disconnection is checked by applying a voltage, since a fuse resistor for checking the disconnection is provided independently, no voltage is applied to the solid-state imaging device for the check.
【０００７】[0007]
【発明の実施の形態】以下、本発明に係る固体撮像素子
の基板電圧供給回路の好適な実施の形態を図面を参照し
て詳細に説明する。図１は本発明に係る固体撮像素子の
基板電圧供給回路を示す図である。この固体撮像素子の
基板電圧供給回路１１は、従来と同様の複数の抵抗ｒか
らなる合成抵抗Ｒ1 、Ｒ2 と、それぞれの抵抗ｒに並列
接続したヒューズ抵抗１とを内蔵するのに加えて、抵抗
ｒとは並列接続されていない単独のヒューズ抵抗（切断
チェック用ヒューズ抵抗）１ａを内蔵している。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of a substrate voltage supply circuit for a solid-state imaging device according to the present invention will be described below in detail with reference to the drawings. FIG. 1 is a diagram showing a substrate voltage supply circuit of a solid-state imaging device according to the present invention. The substrate voltage supply circuit 11 of the solid-state imaging device includes, in addition to the built-in composite resistors R 1 and R 2 composed of a plurality of resistors r as in the related art, and a fuse resistor 1 connected in parallel to each of the resistors r. , A single fuse resistor (cutting fuse resistor) 1a not connected in parallel with the resistor r.
【０００８】この切断チェック用ヒューズ抵抗１ａは、
周知の等倍投影転写装置又は縮小投影転写装置を用いた
紫外線転写法、或いは電子線描画装置を用いた電子線転
写法により、ヒューズ抵抗１と同様にパターン形成して
得る。また、切断チェック用ヒューズ抵抗１ａの両端に
は、ヒューズ抵抗１の端子５と同様の端子（チェック用
端子）７をそれぞれ接続して形成してある。The fuse resistance 1a for checking disconnection is
A pattern is formed in the same manner as the fuse resistor 1 by an ultraviolet transfer method using a known equal-size projection transfer device or a reduced projection transfer device, or an electron beam transfer method using an electron beam drawing device. Further, a terminal (check terminal) 7 similar to the terminal 5 of the fuse resistor 1 is connected to both ends of the disconnection check fuse resistor 1a.
【０００９】この固体撮像素子の基板電圧供給回路１１
では、基板電圧ＶSUB を設定する際、個々又は一部の抵
抗ｒに並列接続した小抵抗値のヒューズ抵抗１を一つ又
は任意の組合せで切断した後に、切断チェック用ヒュー
ズ抵抗１ａも同時に切断しておく。ヒューズ抵抗１及び
切断チェック用ヒューズ抵抗１ａの切断は、例えば、レ
ーザや超音波探針により行う。The substrate voltage supply circuit 11 of the solid-state imaging device
Then, when setting the substrate voltage V SUB , after disconnecting one or an arbitrary combination of the small-valued fuse resistors 1 connected in parallel to the individual or some resistors r, the disconnection-checking fuse resistor 1a is also disconnected at the same time. Keep it. The cutting of the fuse resistor 1 and the cutting check fuse resistor 1a is performed by, for example, a laser or an ultrasonic probe.
【００１０】従って、ヒューズ抵抗１の切断による調整
が行われたか否かは、新たに設けた切断チェック用ヒュ
ーズ抵抗１ａの切断のみを確認すればよいことになる。
この切断の確認は、チェック用端子７に直接探針をたて
て、それをテスタ等の電気的検査装置に接続することに
より行う他、切断部に電子ビームを照射したときに誘起
される微小電流の変化を識別することによっても行うこ
とができる。Therefore, whether or not the adjustment by cutting the fuse resistor 1 has been performed can be confirmed only by cutting the newly provided cut check fuse resistor 1a.
Confirmation of the cutting is performed by directly placing a probe on the check terminal 7 and connecting the probe to an electrical inspection device such as a tester, and also by detecting a minute amount induced when the cut portion is irradiated with an electron beam. It can also be done by identifying changes in current.
【００１１】この固体撮像素子の基板電圧供給回路１１
によれば、切断による調整が行われたか否かが、切断チ
ェック用ヒューズ抵抗１ａの切断のみで行えるので、従
来のように一つ一つのヒューズ抵抗１の端子３に電圧を
加えて確認を行う必要がなく、固体撮像素子のチェック
時間を大幅に短縮することができる。The substrate voltage supply circuit 11 of the solid-state imaging device
According to the method, whether or not the adjustment by cutting has been performed can be performed only by cutting the fuse resistor 1a for cutting check. Therefore, a voltage is applied to the terminal 3 of each fuse resistor 1 to confirm it as in the related art. There is no necessity, and the check time of the solid-state imaging device can be significantly reduced.
【００１２】そして、切断チェック用ヒューズ抵抗１ａ
を単独に設けたので、チェックの際に素子３に電圧の印
加されることがなく、固体撮像素子の特性の変化による
品質の低下も防止することができる。Then, a fuse resistor 1a for checking disconnection is provided.
Is provided alone, no voltage is applied to the element 3 at the time of checking, and the deterioration of the quality due to the change in the characteristics of the solid-state imaging element can be prevented.
【００１３】また、切断チェック用ヒューズ抵抗１ａ
を、ヒューズ抵抗１と同様のもので形成できるので、そ
の形成が容易であるとともに、切断もヒューズ抵抗１と
同様の方法により行うことができるので、製造、検査工
程を大きく変更せずに、容易に実施することができる。A fuse resistor 1a for checking disconnection
Can be formed using the same material as the fuse resistor 1, so that it can be formed easily, and can be cut in the same manner as the fuse resistor 1. Can be implemented.
【００１４】更に、一箇所の切断チェック用ヒューズ抵
抗１ａをチェックすればよく、しかも、その位置を特定
することができ、自動化の際の位置検出を容易にするこ
とができる。Further, it is only necessary to check the disconnection check fuse resistor 1a at one place, and furthermore, the position can be specified, and the position detection at the time of automation can be facilitated.
【００１５】[0015]
【発明の効果】以上詳細に説明したように、本発明に係
る固体撮像素子の基板電圧供給回路によれば、ヒューズ
抵抗と同一のヒューズ抵抗を抵抗に並列接続せずに単独
に設けて内蔵したので、切断による調整が行われたか否
かを、この単独に設けたヒューズ抵抗の切断のみで確認
することができ、チェック時間を大幅に短縮して、生産
性を向上させることができる。また、チェックのための
電圧を素子に印加せずに済むので、固体撮像素子の特性
変化等のリスクを回避して、品質を向上させることがで
きる。As described above in detail, according to the substrate voltage supply circuit of the solid-state imaging device according to the present invention, the same fuse resistor as the fuse resistor is provided independently and not connected in parallel to the resistor. Therefore, whether or not the adjustment by cutting has been performed can be confirmed only by cutting the fuse resistor provided alone, so that the checking time can be greatly reduced and the productivity can be improved. In addition, since it is not necessary to apply a voltage for checking to the element, it is possible to avoid a risk such as a change in characteristics of the solid-state imaging element and improve the quality.
【図１】本発明に係る固体撮像素子の基板電圧供給回路
を示す図である。FIG. 1 is a diagram showing a substrate voltage supply circuit of a solid-state imaging device according to the present invention.
【図２】従来の固体撮像素子の基板電圧供給回路を示す
図である。FIG. 2 is a diagram illustrating a substrate voltage supply circuit of a conventional solid-state imaging device.
１…ヒューズ抵抗、１ａ…ヒューズ抵抗（切断チェック
用ヒューズ抵抗）、１１…基板電圧供給回路、Ｒ1 、Ｒ
2 …合成抵抗、ｒ…抵抗1 ... fuse resistor, 1a ... fuse resistor (fuse resistor cutting check), 11 ... substrate voltage supply circuit, R 1, R
2 ... combined resistance, r ... resistance
Claims (1)
れの前記抵抗に並列接続したヒューズ抵抗とを内蔵し、
任意のヒューズ抵抗を切断することにより所望の合成抵
抗値を得て基板電圧を所定の値に設定する固体撮像素子
の基板電圧供給回路において、 前記ヒューズ抵抗と同一のヒューズ抵抗を前記抵抗に並
列接続せずに単独に設けて内蔵したことを特徴とする固
体撮像素子の基板電圧供給回路。An integrated resistor including a plurality of resistors and a fuse resistor connected in parallel to each of the resistors;
In a substrate voltage supply circuit of a solid-state imaging device for setting a substrate voltage to a predetermined value by obtaining a desired combined resistance value by cutting an arbitrary fuse resistor, the same fuse resistor as the fuse resistor is connected in parallel to the resistor A substrate voltage supply circuit for a solid-state image sensor, wherein the substrate voltage supply circuit is provided independently and incorporated without being used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9320764A JPH11154735A (en) | 1997-11-21 | 1997-11-21 | Substrate voltage supply circuit for solid-state imaging element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9320764A JPH11154735A (en) | 1997-11-21 | 1997-11-21 | Substrate voltage supply circuit for solid-state imaging element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11154735A true JPH11154735A (en) | 1999-06-08 |
Family
ID=18125004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9320764A Pending JPH11154735A (en) | 1997-11-21 | 1997-11-21 | Substrate voltage supply circuit for solid-state imaging element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11154735A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100466284C (en) * | 2004-03-05 | 2009-03-04 | 三星电子株式会社 | Biasing circuits, solid state imaging devices, and methods of manufacturing the same |
| JP2016224276A (en) * | 2015-05-29 | 2016-12-28 | 日本電産コパル株式会社 | Focal plane shutter for cameras, and camera |
-
1997
- 1997-11-21 JP JP9320764A patent/JPH11154735A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100466284C (en) * | 2004-03-05 | 2009-03-04 | 三星电子株式会社 | Biasing circuits, solid state imaging devices, and methods of manufacturing the same |
| JP2016224276A (en) * | 2015-05-29 | 2016-12-28 | 日本電産コパル株式会社 | Focal plane shutter for cameras, and camera |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4713602A (en) | Circuit resistance adjusting device | |
| US5331195A (en) | Fuse construction of a semiconductor device | |
| JPH11154735A (en) | Substrate voltage supply circuit for solid-state imaging element | |
| JPH05173655A (en) | Method and apparatus for limiting current | |
| JP2000068561A (en) | Apparatus for conveying elements | |
| JPH04373147A (en) | Fuse structure of semiconductor device | |
| JP2009283506A (en) | Semiconductor device, semiconductor integrated circuit device, and method of adjusting electric characteristics of semiconductor device | |
| EP0969286A3 (en) | An apparatus for the determination of electrical power and a method of testing or calibrating a plurality of such apparatus | |
| JP2003533048A (en) | Semiconductor device and method of manufacturing semiconductor device | |
| JPH08204270A (en) | Semiconductor laser driving circuit | |
| JP3104675B2 (en) | Circuit board and marking method thereof | |
| JPH1167509A (en) | Method for adjusting resistance value of circuit board and circuit board with variable resistor | |
| JP3677789B2 (en) | Method for trimming semiconductor integrated circuit | |
| JPH04261058A (en) | Method for trimming semiconductor device | |
| JP2001189099A (en) | Reference voltage generating circuit, semiconductor memory, and its burn-in method | |
| JP2004248161A (en) | Method of trimming in high frequency power amplifier | |
| JPH034187A (en) | Fuse trimming circuit | |
| JPH05223515A (en) | Manufacture of thin film resistance for strain detection | |
| JPS59122920A (en) | Manufacture of pyroelectric type infrared ray sensor | |
| JPS63207486A (en) | Laser beam trimming device | |
| KR200302459Y1 (en) | SELF-OFD Circuit | |
| JPS634922B2 (en) | ||
| JP3927251B2 (en) | Semiconductor device | |
| JPH05118934A (en) | Pressure sensor device and method for adjusting temperature compensation thereof | |
| JP3147486B2 (en) | Semiconductor element measurement circuit |