JPH09509789A - 回路及びそのような回路に用いて好適な接合電界効果トランジスタ - Google Patents
回路及びそのような回路に用いて好適な接合電界効果トランジスタInfo
- Publication number
- JPH09509789A JPH09509789A JP8519623A JP51962396A JPH09509789A JP H09509789 A JPH09509789 A JP H09509789A JP 8519623 A JP8519623 A JP 8519623A JP 51962396 A JP51962396 A JP 51962396A JP H09509789 A JPH09509789 A JP H09509789A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- current
- voltage
- region
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 230000000694 effects Effects 0.000 claims abstract 2
- 239000000758 substrate Substances 0.000 claims description 15
- 238000009792 diffusion process Methods 0.000 claims description 6
- 230000005684 electric field Effects 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 230000001052 transient effect Effects 0.000 abstract description 2
- 230000015556 catabolic process Effects 0.000 description 9
- 108091006146 Channels Proteins 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000002800 charge carrier Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Emergency Protection Circuit Devices (AREA)
- Thyristors (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.供給電圧により負荷を動作させる回路であって、 −供給電圧源の各極に接続する入力端子と、 −動作中に前記供給電圧により上記入力端子を通過する入力電流を制限する 回路部分Vと、 を備え、上記回路部分が2つの主電極を持つ半導体素子を有し、該素子が当該 回路内の接続点に対し前記入力電流が上記2つの主電極を介して流れるように接 続されるような回路において、 前記半導体素子は実質的に或る導電型(第1導電型)の半導体基体を有し、 該基体において前記主電極は2つの互いに反対側の表面に各々設けられ、各主電 極は対応する表面に隣接する領域を有し、該領域は前記半導体基体の隣接する部 分よりも高いドーピング濃度を有し、この隣接する部分は上記高くドープされた 各領域の間に位置し、前記隣接する部分のドーピングは前記主電極間の電圧が或 る電圧より上昇した場合に電流飽和を発生するようなものであることを特徴とす る回路。 2.請求項1に記載の回路において、前記半導体素子は接合電界効果トランジス タを形成し、前記主電極は当該トランジスタのソース電極及びドレイン電極を各 々形成し、前記半導体基体内に位置し前記第1導電型とは反対の第2導電型の埋 め込み領域が、電気的にフローティング状態のゲート電極を形成すると共にチャ ンネルの介挿された部分を規定していることを特徴とする回路。 3.請求項2に記載の回路において、前記各埋め込み領域はハネカム状に集合さ れた少なくとも略規則的な八角形の形状を各々有すると共に、前記第1導電型の 介挿部分をそのまま残存させ、これら部分が当該トランジスタのチャンネルを形 成していることを特徴とする回路。 4.請求項2又は請求項3に記載の回路において、前記半導体基体は少数キャリ アの発生中心を備える領域を有し、この領域は前記第2導電型の埋め込み領域か ら、最大で、前記第1導電型のもっと弱めにドープされた部分における拡散長と 等しい距離に位置することを特徴とする回路。 5.請求項1に記載の回路において、前記の高めにドープされた領域の間に位置 する前記第1導電型の隣接する部分は、動作中に十分に高い電圧において移動電 荷キャリアの速度飽和の結果として電流−電圧特性で電流飽和が生じるような厚 さ及びドーピングを有することを特徴とする回路。 6.請求項2ないし請求項4の何れか一項に記載の回路に用いて好適な接合電界 効果トランジスタ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL94203688.0 | 1994-12-20 | ||
EP94203688 | 1994-12-20 | ||
PCT/IB1995/001010 WO1996019831A2 (en) | 1994-12-20 | 1995-11-16 | Circuit arrangement, and junction field effect transistor suitable for use in such a circuit arrangement |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH09509789A true JPH09509789A (ja) | 1997-09-30 |
JP3983285B2 JP3983285B2 (ja) | 2007-09-26 |
Family
ID=8217465
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51962396A Expired - Fee Related JP3983285B2 (ja) | 1994-12-20 | 1995-11-16 | 供給電圧により負荷を動作させる回路 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5747841A (ja) |
EP (1) | EP0745273B1 (ja) |
JP (1) | JP3983285B2 (ja) |
CN (1) | CN1111909C (ja) |
DE (1) | DE69505646T2 (ja) |
WO (1) | WO1996019831A2 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19717614A1 (de) | 1997-04-25 | 1998-10-29 | Siemens Ag | Passiver Halbleiterstrombegrenzer |
DE19726678A1 (de) * | 1997-06-24 | 1999-01-07 | Siemens Ag | Passiver Halbleiterstrombegrenzer |
US6624030B2 (en) | 2000-12-19 | 2003-09-23 | Advanced Power Devices, Inc. | Method of fabricating power rectifier device having a laterally graded P-N junction for a channel region |
US6448160B1 (en) | 1999-04-01 | 2002-09-10 | Apd Semiconductor, Inc. | Method of fabricating power rectifier device to vary operating parameters and resulting device |
FR2807569B1 (fr) * | 2000-04-10 | 2004-08-27 | Centre Nat Rech Scient | Perfectionnement apportes aux diodes schottky |
JP4213329B2 (ja) * | 2000-06-15 | 2009-01-21 | 三菱電機株式会社 | 限流装置 |
US6515330B1 (en) | 2002-01-02 | 2003-02-04 | Apd Semiconductor, Inc. | Power device having vertical current path with enhanced pinch-off for current limiting |
WO2005098955A1 (en) * | 2004-04-09 | 2005-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Limiter and semiconductor device using the same |
DE102005060041A1 (de) * | 2005-12-15 | 2007-06-21 | BSH Bosch und Siemens Hausgeräte GmbH | Schaltungsanordnung für ein Peltiermodul |
DE102005060040A1 (de) * | 2005-12-15 | 2007-06-21 | BSH Bosch und Siemens Hausgeräte GmbH | Schaltungsanordnung für ein Peltiermodul |
US8643055B2 (en) * | 2007-09-26 | 2014-02-04 | Stmicroelectronics N.V. | Series current limiter device |
WO2009042807A2 (en) | 2007-09-26 | 2009-04-02 | Lakota Technologies, Inc. | Adjustable field effect rectifier |
US8148748B2 (en) * | 2007-09-26 | 2012-04-03 | Stmicroelectronics N.V. | Adjustable field effect rectifier |
US8633521B2 (en) * | 2007-09-26 | 2014-01-21 | Stmicroelectronics N.V. | Self-bootstrapping field effect diode structures and methods |
US8884359B2 (en) * | 2009-03-26 | 2014-11-11 | Stmicroelectronics S.R.L. | Field-effect transistor with self-limited current |
US9728636B2 (en) * | 2014-04-01 | 2017-08-08 | Northwestern University | System and method for threshold logic with electrostatically formed nanowire transistors |
DE102018217001B4 (de) * | 2018-10-04 | 2020-06-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung von Halbleiterkondensatoren unterschiedlicher Kapazitätswerte in einem Halbleitersubstrat |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1444951A (en) * | 1973-06-18 | 1976-08-04 | Mullard Ltd | Electronic solid state devices |
US4187513A (en) * | 1977-11-30 | 1980-02-05 | Eaton Corporation | Solid state current limiter |
US4228367A (en) * | 1978-08-07 | 1980-10-14 | Precision Monolithics, Inc. | High speed integrated switching circuit for analog signals |
US5008725C2 (en) * | 1979-05-14 | 2001-05-01 | Internat Rectifer Corp | Plural polygon source pattern for mosfet |
SE435436B (sv) * | 1983-02-16 | 1984-09-24 | Asea Ab | Tvapoligt overstromsskydd |
US5111254A (en) * | 1990-08-17 | 1992-05-05 | Gte Laboratories Incorporated | Floating gate array transistors |
-
1995
- 1995-11-16 DE DE69505646T patent/DE69505646T2/de not_active Expired - Lifetime
- 1995-11-16 JP JP51962396A patent/JP3983285B2/ja not_active Expired - Fee Related
- 1995-11-16 WO PCT/IB1995/001010 patent/WO1996019831A2/en active IP Right Grant
- 1995-11-16 CN CN95192377.3A patent/CN1111909C/zh not_active Expired - Fee Related
- 1995-11-16 EP EP95935553A patent/EP0745273B1/en not_active Expired - Lifetime
- 1995-12-19 US US08/574,830 patent/US5747841A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0745273B1 (en) | 1998-10-28 |
WO1996019831A2 (en) | 1996-06-27 |
US5747841A (en) | 1998-05-05 |
CN1111909C (zh) | 2003-06-18 |
JP3983285B2 (ja) | 2007-09-26 |
CN1145138A (zh) | 1997-03-12 |
EP0745273A1 (en) | 1996-12-04 |
WO1996019831A3 (en) | 1996-08-29 |
DE69505646T2 (de) | 1999-05-20 |
DE69505646D1 (de) | 1998-12-03 |
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