JPH09260945A - Microwave and millimeter wave oscillator - Google Patents
Microwave and millimeter wave oscillatorInfo
- Publication number
- JPH09260945A JPH09260945A JP9474596A JP9474596A JPH09260945A JP H09260945 A JPH09260945 A JP H09260945A JP 9474596 A JP9474596 A JP 9474596A JP 9474596 A JP9474596 A JP 9474596A JP H09260945 A JPH09260945 A JP H09260945A
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- Japan
- Prior art keywords
- circuit
- dielectric resonator
- output
- microwave
- millimeter wave
- Prior art date
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- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は誘電体共振器を用い
て発振を安定化させるマイクロ波・ミリ波発振器に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microwave / millimeter wave oscillator for stabilizing oscillation by using a dielectric resonator.
【0002】[0002]
【従来の技術】従来より、マイクロ波及びミリ波の発振
器等には、FETやバイポーラトランジスタ等の3端子
能動素子を用い、該3端子にそれぞれ直列帰還回路、共
振回路及び出力整合回路が接続された直列帰還型の構成
がよく採用される。その具体的な回路例は、例えば図4
に示す構成となる。2. Description of the Related Art Conventionally, microwave and millimeter wave oscillators and the like use 3-terminal active elements such as FETs and bipolar transistors, and a series feedback circuit, a resonance circuit and an output matching circuit are connected to the 3 terminals, respectively. A series feedback type configuration is often adopted. A specific circuit example is shown in FIG.
The configuration shown in FIG.
【0003】すなわち、能動素子としてFET(Field E
ffect Transistor) 21を用い、FET21のソースに
負性抵抗発生用の直列帰還回路22が、FET21のゲ
ートに共振回路23が、FET21のドレインに出力整
合回路24が接続される。That is, an FET (Field E
A series feedback circuit 22 for generating a negative resistance is connected to the source of the FET 21, a resonance circuit 23 is connected to the gate of the FET 21, and an output matching circuit 24 is connected to the drain of the FET 21.
【0004】ここで、共振回路23には、周波数の制御
用にバラクタ25が接続されると共に、発振周波数の安
定化及び低雑音化のために伝送線路26と結合させて誘
電体共振器27が装荷される。尚、Vcはバラクタ25
の制御電圧である。A varactor 25 is connected to the resonance circuit 23 for controlling the frequency, and a dielectric resonator 27 is connected to the transmission line 26 for stabilizing the oscillation frequency and reducing noise. Be loaded. Vc is the varactor 25
Is the control voltage of.
【0005】[0005]
【発明が解決しようとする課題】しかしながら、上記の
直列帰還型発振器の場合、バラクタの直列抵抗が大きく
Qがあまり高くないと、誘電体共振器を用いても発振周
波数が充分に安定化せず、従って位相雑音を低く抑える
ことができないという問題が生じていた。However, in the case of the above series feedback oscillator, if the series resistance of the varactor is large and the Q is not too high, the oscillation frequency cannot be sufficiently stabilized even if the dielectric resonator is used. Therefore, there has been a problem that the phase noise cannot be suppressed low.
【0006】本発明は、このような誘電体共振器を装荷
した直列帰還型マイクロ波・ミリ波発振器の欠点を解消
するものである。The present invention solves the drawbacks of the series feedback type microwave / millimeter wave oscillator loaded with such a dielectric resonator.
【0007】[0007]
【課題を解決するための手段】本発明は上記に鑑みて成
されたもので、トランジスタを能動素子とし、該トラン
ジスタの3端子にそれぞれ直列帰還回路、誘電体共振器
との結合線路を含む共振回路及び出力整合回路を含む出
力回路が接続された上記誘電体共振器を有する直列帰還
型のマイクロ波・ミリ波発振器であって、誘電体共振器
が上記結合線路と上記出力回路との両方に結合するマイ
クロ波・ミリ波発振器を提供するものである。SUMMARY OF THE INVENTION The present invention has been made in view of the above, and has a transistor as an active element and a resonance including a series feedback circuit and a coupling line with a dielectric resonator at each of three terminals of the transistor. A series feedback microwave / millimeter wave oscillator having the dielectric resonator to which an output circuit including a circuit and an output matching circuit is connected, wherein the dielectric resonator is provided in both the coupling line and the output circuit. A microwave / millimeter wave oscillator to be coupled is provided.
【0008】また、本発明は、上記共振回路がバラクタ
を回路素子の一部として構成されるマイクロ波・ミリ波
発振器を提供するものである。The present invention also provides a microwave / millimeter-wave oscillator in which the above-mentioned resonant circuit comprises a varactor as a part of a circuit element.
【0009】更に、本発明は、上記誘電体共振器との結
合度が上記結合線路よりも上記出力回路において粗とな
るように構成したマイクロ波・ミリ波発振器を提供する
ものである。Further, the present invention provides a microwave / millimeter wave oscillator configured such that the degree of coupling with the dielectric resonator is coarser in the output circuit than in the coupled line.
【0010】[0010]
【発明の実施の形態】以下に、本発明を図面に基づいて
説明する。図1は、本発明の一実施形態におけるマイク
ロ波・ミリ波発振器を示す回路図である。BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described below with reference to the drawings. FIG. 1 is a circuit diagram showing a microwave / millimeter wave oscillator according to an embodiment of the present invention.
【0011】図において、発振用の能動素子1はN−A
lGaAs/InGaAsヘテロ接合FETであり、F
ETのソースに負性抵抗発生用の直列帰還回路としての
ショートスタブ2が、FETのゲートにバラクタ3を含
む共振回路4が、またFETのドレインに出力整合回路
5を含む出力回路6が接続される。In the figure, an active element 1 for oscillation is NA
lGaAs / InGaAs heterojunction FET, F
A short stub 2 as a series feedback circuit for generating a negative resistance is connected to the source of ET, a resonance circuit 4 including a varactor 3 is connected to the gate of the FET, and an output circuit 6 including an output matching circuit 5 is connected to the drain of the FET. It
【0012】ここでバラクタ3は能動素子1と同様なN
−AlGaAs/InGaAsヘテロ接合FETのゲー
ト容量を用いるが、線形な周波数特性を有し、しかも直
列抵抗を低減させるために、特公平7−70736号公
報に認められるように、上記ヘテロ接合FETのドレイ
ンをキャパシタ7によってRF (Radio Frequency)短絡
し、しかも上記ドレインに直流バイアス電圧Vdvを印加
できる構成としている。Here, the varactor 3 has the same N as the active element 1.
-AlGaAs / InGaAs Heterojunction FET gate capacitance is used, but in order to have a linear frequency characteristic and reduce series resistance, as disclosed in Japanese Patent Publication No. 7-73636, the drain of the heterojunction FET is used. Is short-circuited by RF (Radio Frequency) with the capacitor 7, and the DC bias voltage Vdv can be applied to the drain.
【0013】また、ゲートの共振回路4には、更に結合
線路8が設けられ、誘電体共振器9は、結合線路8に結
合すると共に、出力回路6にも結合するように装荷され
る。尚、10はバイアス線のバイパスキャパシタ、11
は直流遮断用のキャパシタである。The gate resonance circuit 4 is further provided with a coupling line 8, and the dielectric resonator 9 is loaded so as to be coupled to the coupling line 8 and also to the output circuit 6. Incidentally, 10 is a bypass capacitor for the bias line, 11
Is a DC blocking capacitor.
【0014】一方、バラクタ3の直列抵抗はドレインに
直流電圧を印加することによって低減されているが、そ
れでもゲート容量の0.1pFに対して数Ωあり、従っ
てバラクタ3のQは60GHzにおいて10程度以下と
小さく、共振回路4全体のQを低下させてしまう。On the other hand, the series resistance of the varactor 3 is reduced by applying a DC voltage to the drain, but it is still several Ω with respect to the gate capacitance of 0.1 pF. Therefore, the Q of the varactor 3 is about 10 at 60 GHz. It is as small as the following and the Q of the entire resonance circuit 4 is lowered.
【0015】従って、従来のように共振回路4の結合線
路8にのみ誘電体共振器9を結合させても位相雑音の抑
制は充分ではない。そこで、本実施形態では、誘電体共
振器9を共振回路4の結合線路8のみでなく出力回路6
にも結合させて、発振周波数の安定化及び位相雑音の抑
制を計るものである。Therefore, even if the dielectric resonator 9 is coupled only to the coupling line 8 of the resonance circuit 4 as in the conventional case, the suppression of the phase noise is not sufficient. Therefore, in the present embodiment, the dielectric resonator 9 is used not only for the coupling line 8 of the resonance circuit 4 but also for the output circuit 6
In addition, it is intended to stabilize the oscillation frequency and suppress the phase noise.
【0016】[0016]
【実施例】以下に本発明の第一の実施形態における具体
的な実施例を示す。図2は第一の実施例を示す要部斜視
図であり、30GHz帯のモノリシック電圧制御発振器で
ある。EXAMPLES Specific examples of the first embodiment of the present invention will be described below. FIG. 2 is a perspective view of a main part of the first embodiment, which is a 30 GHz band monolithic voltage controlled oscillator.
【0017】先ず、GaAs基板12上の0.15μm
ゲートAlGaAs/InGaAsヘテロ接合FETを
発振能動素子1及びバラクタ3として用い、直列帰還用
ショートスタブ2、バラクタ3及び結合線路8を含む共
振回路4、並びにショートスタブを用いた出力整合回路
5を含む出力回路6を有するモノリシック半導体集積回
路(以下MMICと記す)を製作した。First, 0.15 μm on the GaAs substrate 12
An output including a gate AlGaAs / InGaAs heterojunction FET as an oscillation active element 1 and a varactor 3, a series feedback short stub 2, a resonant circuit 4 including a varactor 3 and a coupling line 8, and an output matching circuit 5 using a short stub. A monolithic semiconductor integrated circuit (hereinafter referred to as MMIC) having the circuit 6 was manufactured.
【0018】ここで、GaAs基板12の厚さは0.0
4mm、Auメッキ放熱体6の厚さは0.04mmであ
る。そして、このMMICチップを図示しないAuメッ
キケースの底部に半田を用いて固定している。Here, the thickness of the GaAs substrate 12 is 0.0
4 mm, the thickness of the Au-plated radiator 6 is 0.04 mm. Then, this MMIC chip is fixed to the bottom of an Au plating case (not shown) by using solder.
【0019】一方、誘電体共振器9は、Ba(Mg,T
a)O3 のセラミックから成る直径2.2mm、高さ
1.4mmの円柱型であり、この誘電体共振器9の端が
結合線路8及び出力回路6と結合するよう、図2に示す
とおり誘電体共振器9を設置及び固定して発振器を製作
した。On the other hand, the dielectric resonator 9 is composed of Ba (Mg, T
a) A cylindrical type made of O 3 ceramic with a diameter of 2.2 mm and a height of 1.4 mm. As shown in FIG. 2, the end of the dielectric resonator 9 is coupled to the coupling line 8 and the output circuit 6. An oscillator was manufactured by installing and fixing the dielectric resonator 9.
【0020】この実施例における発振器の位相雑音は、
発振周波数のピークから100kHz離れた周波数におい
て−96dBc/Hzとなり、従来の共振回路の結合線路
にだけ誘電体共振器が結合した発振器よりも6dB改善
された。The phase noise of the oscillator in this embodiment is
At a frequency 100 kHz away from the peak of the oscillation frequency, it becomes -96 dBc / Hz, which is 6 dB better than the oscillator in which the dielectric resonator is coupled only to the coupling line of the conventional resonance circuit.
【0021】尚、本実施例では、図2に示すように誘電
体共振器9は出力回路6の伝送線路に重ならず、ごく近
接した位置に配設する、すなわち、粗結合にする方が低
位相雑音になる結果が得られた。また、出力回路6にお
ける誘電体共振器9の結合位置は、出力整合回路5より
も後段の単なる出力の伝送線路の位置が良好な結果が得
られた。In this embodiment, as shown in FIG. 2, the dielectric resonator 9 does not overlap the transmission line of the output circuit 6 and is arranged in a very close position, that is, it is better to use the coarse coupling. The result is low phase noise. Further, as for the coupling position of the dielectric resonator 9 in the output circuit 6, a good result was obtained in which the position of the simple transmission line at the latter stage of the output matching circuit 5 was good.
【0022】次に、本実施形態の第二の実施例を示す。
図3は第二の実施例を示す要部斜視図であり、60GHz
帯のモノリシック電圧制御発振器である。この実施例の
回路構成は第一の実施例と同様であるが、出力回路6を
共振回路4の結合線路8と並行となるように構成してい
る。Next, a second example of this embodiment will be shown.
FIG. 3 is a perspective view of an essential part showing a second embodiment, which is 60 GHz.
It is a monolithic voltage controlled oscillator of the band. The circuit configuration of this embodiment is similar to that of the first embodiment, but the output circuit 6 is configured to be parallel to the coupling line 8 of the resonance circuit 4.
【0023】また、誘電体共振器9は直径1.3mm、
高さ0.55mmの円柱型であり、この誘電体共振器9
は結合線路8を跨ぎ、出力回路6にも結合するように配
設されている。すなわち、誘電体共振器9は結合線路8
と密結合している。The dielectric resonator 9 has a diameter of 1.3 mm,
This dielectric resonator 9 has a cylindrical shape with a height of 0.55 mm.
Are arranged so as to straddle the coupling line 8 and be coupled also to the output circuit 6. That is, the dielectric resonator 9 is connected to the coupled line 8
It is tightly coupled with.
【0024】この状態において、従来のように誘電体共
振器9が出力回路6と結合しない場合よりも、位相雑音
は10dB以上、環境温度の変化に対する発振周波数の
変動は数分の1に改善された。In this state, the phase noise is 10 dB or more and the fluctuation of the oscillation frequency with respect to the change of the environmental temperature is improved to a fraction of that in the conventional case where the dielectric resonator 9 is not coupled to the output circuit 6. It was
【0025】尚、第一の実施例と同様に、誘電体共振器
9が出力回路6よりも共振回路4の結合線路8と密結合
するほうが良好な特性が得られる理由として、誘電体共
振器9を含めた共振回路4が発振周波数を決めるので、
これに影響を与えないために誘電体共振器9が出力回路
6と粗結合である方がよいと考えられる。As in the first embodiment, the reason why better characteristics can be obtained when the dielectric resonator 9 is tightly coupled with the coupling line 8 of the resonance circuit 4 than the output circuit 6 is that the dielectric resonator 9 is obtained. Since the resonance circuit 4 including 9 determines the oscillation frequency,
It is considered preferable that the dielectric resonator 9 is loosely coupled to the output circuit 6 so as not to affect this.
【0026】また、誘電体共振器9を出力回路6の出力
整合回路5以後の伝送線路に結合させた場合と出力整合
回路5に結合させた場合とを比較すると、位相雑音及び
発振出力共に前者の方が良好であった。これは、発振条
件が出力整合回路5も含めて決まることから、これに影
響を与えない出力回路6の単なる伝送線路に誘電体共振
器9が結合する方がよいものと考えられる。Further, comparing the case where the dielectric resonator 9 is coupled to the transmission line after the output matching circuit 5 of the output circuit 6 and the case where it is coupled to the output matching circuit 5, both the phase noise and the oscillation output are compared. Was better. This is because the oscillation condition is determined including the output matching circuit 5, and it is considered that it is better to couple the dielectric resonator 9 to a simple transmission line of the output circuit 6 that does not affect this.
【0027】以上、本発明を実施形態に基づいて説明し
たが、本発明は上記した実施形態に限定されるものでは
なく、特許請求の範囲に記載した構成を変更しない限
り、どのようにでも実施できる。例えば、上記各実施形
態においては、誘電体共振器との結合線路として、マイ
クロストリップ線路を使用したが、本発明はこれに限定
されることはなく、コプレーナ線路等、種々のものが使
用できる。As described above, the present invention has been described based on the embodiments. However, the present invention is not limited to the above-described embodiments, and may be implemented in any way unless the configuration described in the claims is changed. it can. For example, in each of the above embodiments, the microstrip line is used as the coupling line with the dielectric resonator, but the present invention is not limited to this, and various types such as a coplanar line can be used.
【0028】また、発振器の回路構成として、FETの
ソースに帰還用エレメントが、ゲートに共振回路が、ド
レインに出力回路が接続された場合について説明した
が、本発明はこれに限定されることなく、トランジスタ
の3端子にこれらが別々に接続された任意の組み合わせ
からなる直列帰還型の発振回路に適応できる。Also, as the circuit configuration of the oscillator, the case where the feedback element is connected to the source of the FET, the resonance circuit is connected to the gate, and the output circuit is connected to the drain has been described, but the present invention is not limited to this. Can be applied to a series-feedback type oscillation circuit including an arbitrary combination in which these are separately connected to the three terminals of the transistor.
【0029】[0029]
【発明の効果】以上述べたように、本発明におけるマイ
クロ波・ミリ波発振器においては、誘電体共振器装荷電
圧制御発振器の構成において、位相雑音を低レベルに抑
制することができ、しかも発振周波数の高安定化が可能
となり、通信システムへの応用拡大に大きく寄与するこ
とが可能である等、多大な効果を奏する。As described above, in the microwave / millimeter wave oscillator according to the present invention, the phase noise can be suppressed to a low level in the structure of the voltage controlled oscillator loaded with the dielectric resonator, and the oscillation frequency can be suppressed. It is possible to achieve high stability, and it is possible to greatly contribute to the expansion of application to communication systems.
【図1】本発明の一実施形態におけるマイクロ波・ミリ
波発振器の回路図である。FIG. 1 is a circuit diagram of a microwave / millimeter wave oscillator according to an embodiment of the present invention.
【図2】本発明の第一の実施例におけるマイクロ波・ミ
リ波発振器を示す要部斜視図である。FIG. 2 is a perspective view showing a main part of a microwave / millimeter wave oscillator according to the first embodiment of the present invention.
【図3】本発明の第二の実施例におけるマイクロ波・ミ
リ波発振器を示す要部斜視図である。FIG. 3 is a perspective view of a main part of a microwave / millimeter wave oscillator according to a second embodiment of the present invention.
【図4】従来のマイクロ波・ミリ波発振器の回路図であ
る。FIG. 4 is a circuit diagram of a conventional microwave / millimeter wave oscillator.
1 発振能動素子 2 帰還用ショートスタブ 3 バラクタ 4 共振回路 5 出力整合回路 6 出力回路 7、11 キャパシタ 8 結合線路 9 誘電体共振器 10 バイパスキャパシタ 12 GaAs基板 13 放熱体 1 Oscillation Active Element 2 Short Stub for Feedback 3 Varactor 4 Resonance Circuit 5 Output Matching Circuit 6 Output Circuit 7, 11 Capacitor 8 Coupling Line 9 Dielectric Resonator 10 Bypass Capacitor 12 GaAs Substrate 13 Heat Dissipator
Claims (3)
ジスタの3端子にそれぞれ直列帰還回路、誘電体共振器
との結合線路を含む共振回路及び出力整合回路を含む出
力回路が接続された上記誘電体共振器を有する直列帰還
型のマイクロ波・ミリ波発振器であって、 上記誘電体共振器が上記結合線路と上記出力回路との両
方に結合することを特徴とするマイクロ波・ミリ波発振
器。1. A dielectric resonance in which a transistor is an active element, and a series feedback circuit, a resonance circuit including a coupling line with a dielectric resonator, and an output circuit including an output matching circuit are connected to three terminals of the transistor, respectively. A microwave / millimeter wave oscillator of series feedback type having a resonator, wherein the dielectric resonator is coupled to both the coupling line and the output circuit.
一部として構成することを特徴とする請求項1に記載の
マイクロ波・ミリ波発振器。2. The microwave / millimeter wave oscillator according to claim 1, wherein the resonance circuit comprises a varactor as a part of a circuit element.
合線路よりも上記出力回路において粗となるように構成
したことを特徴とする請求項1乃至請求項2の何れかに
記載のマイクロ波・ミリ波発振器。3. The degree of coupling with the dielectric resonator is configured to be coarser in the output circuit than in the coupled line, according to any one of claims 1 and 2. Microwave / millimeter wave oscillator.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9474596A JP2923851B2 (en) | 1996-03-26 | 1996-03-26 | Microwave / millimeter wave oscillator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9474596A JP2923851B2 (en) | 1996-03-26 | 1996-03-26 | Microwave / millimeter wave oscillator |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH09260945A true JPH09260945A (en) | 1997-10-03 |
JP2923851B2 JP2923851B2 (en) | 1999-07-26 |
Family
ID=14118672
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9474596A Expired - Lifetime JP2923851B2 (en) | 1996-03-26 | 1996-03-26 | Microwave / millimeter wave oscillator |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2923851B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6239663B1 (en) | 1999-01-13 | 2001-05-29 | Nec Corporation | High-frequency oscillator using FETs and transmission lines |
EP1235343A2 (en) * | 2001-02-22 | 2002-08-28 | Alps Electric Co., Ltd. | Microwave oscillator having improved phase noise of oscillation signal |
WO2002071594A1 (en) * | 2001-03-07 | 2002-09-12 | Hitachi, Ltd. | Miniature oscillation device and method for manufacturing the same |
CN110289814A (en) * | 2019-07-16 | 2019-09-27 | 电子科技大学 | A kind of Low phase noise oscillator |
-
1996
- 1996-03-26 JP JP9474596A patent/JP2923851B2/en not_active Expired - Lifetime
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6239663B1 (en) | 1999-01-13 | 2001-05-29 | Nec Corporation | High-frequency oscillator using FETs and transmission lines |
EP1235343A2 (en) * | 2001-02-22 | 2002-08-28 | Alps Electric Co., Ltd. | Microwave oscillator having improved phase noise of oscillation signal |
EP1235343A3 (en) * | 2001-02-22 | 2003-12-17 | Alps Electric Co., Ltd. | Microwave oscillator having improved phase noise of oscillation signal |
US6765447B2 (en) | 2001-02-22 | 2004-07-20 | Alps Electric Co., Ltd. | Microwave oscillator having improved phase noise of oscillation signal |
WO2002071594A1 (en) * | 2001-03-07 | 2002-09-12 | Hitachi, Ltd. | Miniature oscillation device and method for manufacturing the same |
CN110289814A (en) * | 2019-07-16 | 2019-09-27 | 电子科技大学 | A kind of Low phase noise oscillator |
CN110289814B (en) * | 2019-07-16 | 2021-11-30 | 电子科技大学 | Low-phase-noise oscillator |
Also Published As
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JP2923851B2 (en) | 1999-07-26 |
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