JPH09102448A - Charged particle beam exposure method and device - Google Patents

Charged particle beam exposure method and device

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Publication number
JPH09102448A
JPH09102448A JP25639695A JP25639695A JPH09102448A JP H09102448 A JPH09102448 A JP H09102448A JP 25639695 A JP25639695 A JP 25639695A JP 25639695 A JP25639695 A JP 25639695A JP H09102448 A JPH09102448 A JP H09102448A
Authority
JP
Japan
Prior art keywords
mask
electrostatic deflector
particle beam
charged particle
electromagnetic lens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP25639695A
Other languages
Japanese (ja)
Other versions
JP3461066B2 (en
Inventor
Akio Takemoto
暁生 竹本
Yoshihisa Daikyo
義久 大饗
Tomohiko Abe
智彦 阿部
Takamasa Sato
高雅 佐藤
Hiroshi Yasuda
洋 安田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP25639695A priority Critical patent/JP3461066B2/en
Priority to US08/634,410 priority patent/US5757015A/en
Publication of JPH09102448A publication Critical patent/JPH09102448A/en
Priority to US08/917,464 priority patent/US5969365A/en
Priority to US09/353,586 priority patent/US6242751B1/en
Priority to US09/826,913 priority patent/US6420700B2/en
Application granted granted Critical
Publication of JP3461066B2 publication Critical patent/JP3461066B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To improve charged particle beam irradiation position accuracy on an exposure object and cut a setting standby time which is necessary during step change of a driving voltage of a deflector for a stencil mask. SOLUTION: Deflectors 40, 43 are arranged between electromagnetic lenses 21, 22, deflectors 41, 42, 44 are arranged between the electromagnetic lenses 22, 23, a crossover image CO2 deviates from a central position in an optical axial direction of the deflector 42 and an output voltage of an amplifier 51 is applied commonly to the deflectors 41, 42. Discrepancy of a locus of charged particle beam by misregistration of crossover images CO1, CO2 is corrected by the deflectors 43, 44, respectively. A value obtained by interior division of a strength A1 whereat the crossover image CO1 is in a proper position and strength A2 whereat the crossover image CO2 is in a proper position of an electromagnetic lens 21B by a voltage ratio applied to the deflectors 43, 44 is made strength of the electromagnetic lens 21B. Correction is performed by the deflector 43 so that an aperture passing current is maximum in step change of an application voltage of the deflector 40.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、ステンシルマスク
で荷電粒子ビームの横断面を整形し、レジスト膜が被着
された半導体ウェーハやマスク等に該荷電粒子ビームを
照射して露光する荷電粒子ビーム露光方法及び装置に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a charged particle beam for shaping a cross section of a charged particle beam with a stencil mask, and irradiating the semiconductor wafer or mask having a resist film with the charged particle beam for exposure. An exposure method and apparatus.

【０００２】[0002]

【従来の技術】図１１は、ステンシルマスクを用いた従
来の荷電粒子ビーム露光装置の概略構成を示す。荷電粒
子銃１０から放射された荷電粒子ビーム、例えば電子ビ
ームは、その横断面が、ステンシルマスク１２上の選択
された透過孔パターンにより整形され、不図示のウェー
ハ上に縮小照射される。ＡＸは光軸であり、１３Ａは荷
電粒子ビームの軌跡である。２１Ａ、２１Ｂ、２２Ａ、
２２Ｂ及び２３は電磁レンズであり、３０及び３１はア
パーチャ板である。2. Description of the Related Art FIG. 11 shows a schematic structure of a conventional charged particle beam exposure apparatus using a stencil mask. The cross section of the charged particle beam, for example, the electron beam emitted from the charged particle gun 10 is shaped by the selected transmission hole pattern on the stencil mask 12, and is reduced and irradiated onto a wafer (not shown). AX is the optical axis, and 13A is the trajectory of the charged particle beam. 21A, 21B, 22A,
22B and 23 are electromagnetic lenses, and 30 and 31 are aperture plates.

【０００３】光軸ＡＸに沿って電磁レンズ２１Ｂを通っ
た荷電粒子ビームは、これをステンシルマスク１２上の
選択された透過孔パターンに垂直に通すため、偏向器４
５で振られ、偏向器４６で光軸ＡＸに平行にされる。ス
テンシルマスク１２を通った荷電粒子ビームは、偏向器
４７により光軸ＡＸ側へ振り戻され、偏向器４８により
光軸ＡＸ上を通るように偏向される。The charged particle beam passing through the electromagnetic lens 21B along the optical axis AX passes through the deflector 4 in order to pass the charged particle beam perpendicularly to the selected transmission hole pattern on the stencil mask 12.
It is shaken by 5 and is made parallel to the optical axis AX by the deflector 46. The charged particle beam that has passed through the stencil mask 12 is returned to the optical axis AX side by the deflector 47, and is deflected by the deflector 48 so as to pass on the optical axis AX.

【０００４】このタイプの荷電粒子ビーム露光装置は、
荷電粒子ビームがステンシルマスク１２に垂直入射する
ので、荷電粒子ビームの横断面整形精度が高くなり、比
較的広い範囲でステンシルマスク１２上の透過孔パター
ンを選択することができるという利点を有する。しか
し、偏向器４５〜４８のいずれについても、偏向量の変
化に対するアパーチャ板３１上及び不図示のウェーハ上
での荷電粒子ビーム位置の変化が大きい（偏向能率が大
きい）ので、ステンシルマスク１２上の透過孔パターン
選択の際に問題となる。例えば、偏向器４６による偏向
量を少し増加させると、荷電粒子ビームは二点鎖線で示
す軌跡１３Ｂのようになる。一方、ウェーハ上の荷電粒
子ビーム照射位置に要求される精度は例えば０．０１μ
ｍと極小である。透過孔パターン選択の際、偏向器４５
〜４８にはステップ変化する駆動電圧が印加され、必要
な整定待ち時間が例えば図１３中に示すｔａのように長
くなる。This type of charged particle beam exposure apparatus is
Since the charged particle beam is vertically incident on the stencil mask 12, there is an advantage that the cross-sectional shaping accuracy of the charged particle beam is high and the transmission hole pattern on the stencil mask 12 can be selected in a relatively wide range. However, in any of the deflectors 45 to 48, the change of the charged particle beam position on the aperture plate 31 and the wafer (not shown) with respect to the change of the deflection amount is large (the deflection efficiency is large). This becomes a problem when selecting the pattern of the transmission holes. For example, when the deflection amount by the deflector 46 is slightly increased, the charged particle beam has a locus 13B indicated by a chain double-dashed line. On the other hand, the accuracy required for the charged particle beam irradiation position on the wafer is, for example, 0.01 μm.
It is as small as m. When selecting a transmission hole pattern, the deflector 45
A driving voltage that changes in steps is applied to ~ 48, and the necessary settling waiting time becomes long, for example, ta shown in FIG.

【０００５】ウェーハ上の目標位置に正確に荷電粒子ビ
ームを照射するために、整定待ち時間中は不図示のブラ
ンキング偏向器とアパーチャ板３１とで荷電粒子ビーム
をブランキングしておき、この時間経過後にウェーハ上
へのビーム照射を開始しなければならず、無駄時間とな
り、露光のスループットが低下する原因となる。図１２
は、ステンシルマスクを用いた従来の他の荷電粒子ビー
ム露光装置要部の概略構成（特開昭６２−２０６８２８
号公報）を示す。In order to accurately irradiate the charged particle beam on the target position on the wafer, the charged particle beam is blanked by a blanking deflector (not shown) and the aperture plate 31 during the settling time, and this time is set. Beam irradiation on the wafer must be started after the elapse of time, resulting in a dead time and a decrease in exposure throughput. FIG.
Is a schematic structure of a main part of another conventional charged particle beam exposure apparatus using a stencil mask (Japanese Patent Laid-Open No. 62-206828).
Issue gazette).

【０００６】この装置では、荷電粒子銃１０のガンクロ
スオーバＣＯのクロスオーバ像ＣＯ１及びＣＯ２がそれ
ぞれ電磁レンズ２１Ｂと電磁レンズ２２との間及び電磁
レンズ２２と電磁レンズ２３との間に存在し、偏向器４
０がその光軸方向中央点をクロスオーバ像ＣＯ１の位置
に一致させて配置され、同様に、偏向器４９がその光軸
方向中央点をクロスオーバ像ＣＯ２の位置に一致させて
配置されている。１３Ｃは、偏向器４０及び４９の偏向
量が０のときに、電磁レンズ２１Ｂ、２２及び２３を通
ったときの荷電粒子ビーム縦断面を光軸ＡＸに直角な方
向に拡大して示したものである。In this device, the crossover images CO1 and CO2 of the gun crossover CO of the charged particle gun 10 are present between the electromagnetic lens 21B and the electromagnetic lens 22 and between the electromagnetic lens 22 and the electromagnetic lens 23, respectively. Deflector 4
0 is arranged with its center point in the optical axis direction aligned with the position of the crossover image CO1, and similarly, the deflector 49 is arranged with its center point in the optical axis direction aligned with the position of the crossover image CO2. . 13C is an enlarged view of the vertical cross section of the charged particle beam passing through the electromagnetic lenses 21B, 22 and 23 in a direction perpendicular to the optical axis AX when the deflection amounts of the deflectors 40 and 49 are 0. is there.

【０００７】ステンシルマスク１２上の選択された透過
孔パターンに荷電粒子ビームを通すために偏向器４０で
偏向された荷電粒子ビームは、電磁レンズ２２の収束作
用によりクロスオーバ像ＣＯ２の位置を通り、偏向器４
９により光軸ＡＸ上を通るように偏向にされる。このタ
イプの荷電粒子ビーム露光装置では、図１１の偏向器４
６及び４７に対応するものが配置されていないので、ス
テンシルマスク１２上の透過孔パターンの選択範囲が図
１１の場合よりも狭くなる。The charged particle beam deflected by the deflector 40 to pass the charged particle beam through the selected transmission hole pattern on the stencil mask 12 passes through the position of the crossover image CO2 due to the converging action of the electromagnetic lens 22, Deflector 4
It is deflected by 9 so as to pass on the optical axis AX. In this type of charged particle beam exposure apparatus, the deflector 4 shown in FIG.
Since those corresponding to 6 and 47 are not arranged, the selection range of the transmission hole pattern on the stencil mask 12 becomes narrower than that in the case of FIG.

【０００８】しかし、偏向器４０及び４９の、アパーチ
ャ板３１上及びウェーハ上での偏向能率が小さいので、
必要な整定待ち時間が、例えば図１３中に示すｔｂのよ
うに、図１１の場合よりも短くなるという利点を有す
る。However, since the deflection efficiency of the deflectors 40 and 49 on the aperture plate 31 and on the wafer is small,
There is an advantage that the required settling waiting time is shorter than that in the case of FIG. 11, for example, tb shown in FIG.

【０００９】[0009]

【発明が解決しようとする課題】図１２において、クロ
スオーバ像ＣＯ２は実際には電磁レンズ２３の上端から
数ｍｍ上の位置であるため、実際には、偏向器４９の光
軸方向中央点をクロスオーバ像ＣＯ２の位置に一致させ
ることができない。このため、偏向器４９で偏向された
荷電粒子ビームが光軸ＡＸから外れ、ウェーハ上の荷電
粒子ビーム照射位置精度が悪くなり、また、マスク用偏
向器４０及び４９の、アパーチャ板３１上及びウェーハ
上での偏向能率が図１２の場合よりも大きくなって、必
要な整定待ち時間が長くなる。In FIG. 12, since the crossover image CO2 is actually located at a position several mm above the upper end of the electromagnetic lens 23, the center point of the deflector 49 in the optical axis direction is actually set. The position of the crossover image CO2 cannot be matched. Therefore, the charged particle beam deflected by the deflector 49 deviates from the optical axis AX, and the accuracy of the charged particle beam irradiation position on the wafer deteriorates. Further, the mask deflectors 40 and 49 on the aperture plate 31 and the wafer. The above deflection efficiency becomes larger than that in the case of FIG. 12, and the required settling waiting time becomes longer.

【００１０】本発明の目的は、このような問題点に鑑
み、露光対象物上の荷電粒子ビーム照射位置精度を向上
させ、かつ、ステンシルマスク用偏向器の駆動電圧のス
テップ変化の際に必要な整定待ち時間を短縮することが
できる荷電粒子ビーム露光方法及び装置を提供するとに
ある。In view of these problems, the object of the present invention is to improve the accuracy of the charged particle beam irradiation position on the object to be exposed and to change the driving voltage of the stencil mask deflector stepwise. A charged particle beam exposure method and apparatus capable of shortening the settling waiting time.

【００１１】[0011]

【課題を解決するための手段及びその作用効果】第１発
明では、例えば図１において、第１電磁レンズ２１、第
２電磁レンズ２２、第３電磁レンズ２３及びアパーチャ
３１が互いに光軸ＡＸを一致させてこの順に配置され、
荷電粒子ビームの横断面を整形する透過孔パターンが複
数形成されたステンシルマスク１２が略第２電磁レンズ
位置に該光軸ＡＸに垂直に配置され、荷電粒子ビームが
該第１電磁レンズ２１内、該第２電磁レンズ２２内、該
ステンシルマスク１２上の選択された透過孔パターン、
該第３電磁レンズ２３内及び該アパーチャ３１をこの順
に通って露光対象物１１上に照射され、該第１電磁レン
ズ２１と該第２電磁レンズ２２との間にガンクロスオー
バＣＯの第１クロスオーバ像ＣＯ１が存在し、該第２電
磁レンズ２２と該第３電磁レンズ２３との間かつ該第３
電磁レンズ２３側に該ガンクロスオーバＣＯの第２クロ
スオーバ像ＣＯ２が存在し、中心軸を該光軸ＡＸに一致
させて、該第１電磁レンズ２１と該第２電磁レンズ２２
との間に配置されたマスク入射側静電偏向器４０と、中
心軸を該光軸ＡＸに一致させて、該第２電磁レンズ２２
と該第３電磁レンズ２３との間の該第２電磁レンズ２２
側に配置されたマスク出射側第１静電偏向器４１と、中
心軸を該光軸ＡＸに一致させて、該第２電磁レンズ２２
と該第３電磁レンズ２３との間の該第３電磁レンズ２３
側に、光軸方向中央点と該第３電磁レンズ２３との間に
該第２クロスオーバ像ＣＯ２が存在するように配置され
たマスク出射側第２静電偏向器４２とを有する荷電粒子
ビーム露光装置を用いた荷電粒子ビーム露光方法であっ
て、増幅回路５１の出力電圧を該マスク出射側第１静電
偏向器４１と該マスク出射側第２静電偏向器４２とに共
通に印加し、該マスク入射側静電偏向器４０に対し、該
荷電粒子ビームを、該マスク入射側静電偏向器４０から
出射する該荷電粒子ビームを進行方向反対側へ延長させ
た線が該第１クロスオーバ像ＣＯ１の位置を略通るよう
に偏向させ、マスク出射側第１静電偏向器４１に対し、
該荷電粒子ビームを、該マスク出射側第２静電偏向器４
２の光軸方向略中央点へ向けて該マスク出射側第２静電
偏向器４２に入射するように偏向させ、マスク出射側第
２静電偏向器４２に対し、該荷電粒子ビームが光軸上に
略一致するように偏向させる。In the first invention, for example, in FIG. 1, the first electromagnetic lens 21, the second electromagnetic lens 22, the third electromagnetic lens 23 and the aperture 31 coincide with each other in the optical axis AX. And arranged in this order,
A stencil mask 12 having a plurality of transmission hole patterns for shaping the cross section of the charged particle beam is arranged substantially at the second electromagnetic lens position perpendicular to the optical axis AX, and the charged particle beam is in the first electromagnetic lens 21. A selected transmission hole pattern on the stencil mask 12 in the second electromagnetic lens 22;
The exposure target 11 is irradiated through the third electromagnetic lens 23 and the aperture 31 in this order, and the first cross of the gun crossover CO is provided between the first electromagnetic lens 21 and the second electromagnetic lens 22. An over image CO1 is present, and is between the second electromagnetic lens 22 and the third electromagnetic lens 23 and the third electromagnetic lens 23.
The second crossover image CO2 of the gun crossover CO is present on the electromagnetic lens 23 side, and the central axis is made to coincide with the optical axis AX, and the first electromagnetic lens 21 and the second electromagnetic lens 22 are arranged.
And the mask incident-side electrostatic deflector 40 disposed between the second electromagnetic lens 22 and the optical axis AX.
And the second electromagnetic lens 22 between the third electromagnetic lens 23 and
The first electrostatic deflector 41 on the mask emission side disposed on the side of the second electromagnetic lens 22 with its central axis aligned with the optical axis AX.
And the third electromagnetic lens 23 between the third electromagnetic lens 23 and
Charged particle beam having a mask emission side second electrostatic deflector 42 arranged on the side so that the second crossover image CO2 exists between the center point in the optical axis direction and the third electromagnetic lens 23. A charged particle beam exposure method using an exposure apparatus, wherein an output voltage of an amplification circuit 51 is applied to the mask emission side first electrostatic deflector 41 and the mask emission side second electrostatic deflector 42 in common. , A line obtained by extending the charged particle beam with respect to the mask incident side electrostatic deflector 40 to the side opposite to the traveling direction of the charged particle beam emitted from the mask incident side electrostatic deflector 40 is the first cross. The mask is deflected so as to substantially pass the position of the over image CO1, and the mask emission side first electrostatic deflector 41 is deflected.
The charged particle beam is directed to the mask emission side second electrostatic deflector 4
2 is deflected so as to be incident on the mask emission side second electrostatic deflector 42 toward a substantially central point in the optical axis direction of 2, and the charged particle beam is directed to the mask emission side second electrostatic deflector 42 by the optical axis. Bias it so that it almost coincides with the above.

【００１２】この第１発明によれば、第２クロスオーバ
像ＣＯ２が静電偏向器の光軸方向中央点に存在しなくて
も、マスク出射側第２静電偏向器を通った荷電粒子ビー
ムは、静電偏向器の偏向量によらず略光軸上を通るの
で、ステンシルマスク上の透過孔パターン選択の際にス
テップ変化する偏向量に対し、アパーチャ上及び露光対
象物上での荷電粒子ビーム位置の変動が小さく、露光対
象物上の荷電粒子ビーム照射位置精度が向上し、かつ、
該ステップ変化の際に必要な整定待ち時間を短縮するこ
とができる。According to the first aspect of the present invention, even if the second crossover image CO2 does not exist at the center point in the optical axis direction of the electrostatic deflector, the charged particle beam that has passed through the second electrostatic deflector on the mask emission side. Is almost on the optical axis regardless of the deflection amount of the electrostatic deflector, and therefore the charged particles on the aperture and on the exposure target are different from the deflection amount which changes stepwise when the transmission hole pattern is selected on the stencil mask. The fluctuation of the beam position is small, the accuracy of the charged particle beam irradiation position on the exposure target is improved, and
It is possible to shorten the settling waiting time required when the step changes.

【００１３】また、マスク出射側第１静電偏向器とマス
ク出射側第２静電偏向器とに異なる増幅回路の出力電圧
を印加すると、各増幅回路の過渡特性が異なるので、整
定待ち時間を最も長い整定待ち時間に合わせる必要があ
り、整定待ち時間の決定が煩雑であるが、本第１発明に
よれば、増幅回路の出力電圧がマスク出射側第１静電偏
向器とマスク出射側第２静電偏向器とに共通に印加され
るので、整定待ち時間の決定が容易になり、露光装置使
用のスループットが向上する。When output voltages of different amplifier circuits are applied to the first electrostatic deflector on the mask emission side and the second electrostatic deflector on the mask emission side, the transient characteristics of the respective amplifier circuits differ, so that the settling wait time is increased. It is necessary to match the longest settling wait time, and the determination of the settling wait time is complicated. However, according to the first aspect of the present invention, the output voltage of the amplifier circuit causes the mask output side first electrostatic deflector and the mask output side first output voltage. Since the voltage is commonly applied to the two electrostatic deflectors, the settling waiting time is easily determined, and the throughput of the exposure apparatus is improved.

【００１４】第１発明の第１態様では、例えば図１又は
図５において、上記荷電粒子ビーム露光装置は、上記マ
スク入射側静電偏向器４０の光軸方向中央点が上記第１
クロスオーバ像ＣＯ１の位置に略一致するように該マス
ク入射側静電偏向器４０が配置されており、さらに、中
心軸を上記光軸ＡＸに一致させて、上記マスク入射側静
電偏向器４０と上記第２電磁レンズ２２との間又は上記
第１電磁レンズ２１と該マスク入射側静電偏向器４０と
の間に配置され、光軸方向長さが該マスク入射側静電偏
向器４０よりも短い第１補正静電偏向器４３と、中心軸
を該光軸ＡＸに一致させて、上記マスク出射側第１静電
偏向器４１と上記マスク出射側第２静電偏向器４２との
間又は該マスク出射側第１静電偏向器４１と上記第２電
磁レンズ２２との間に配置され、光軸方向長さが該マス
ク出射側第１静電偏向器４１及び該マスク出射側第２静
電偏向器４２のいずれよりも短い第２補正静電偏向器４
４とを有し、該第１補正静電偏向器４３により、該第１
クロスオーバ像ＣＯ１の位置ずれによる、該マスク入射
側静電偏向器４０を出射した該荷電粒子ビームの軌跡の
ずれを補正し、該第２補正静電偏向器４４により、上記
第２クロスオーバ像ＣＯ２の位置ずれによる、該マスク
出射側第２静電偏向器４２を出射した該荷電粒子ビーム
の軌跡のずれを補正する。In the first aspect of the first invention, referring to FIG. 1 or 5, for example, in the charged particle beam exposure apparatus, the central point in the optical axis direction of the mask incident side electrostatic deflector 40 is the first point.
The mask incident side electrostatic deflector 40 is arranged so as to substantially coincide with the position of the crossover image CO1, and the mask incident side electrostatic deflector 40 is further aligned with the central axis thereof coincident with the optical axis AX. And the second electromagnetic lens 22 or between the first electromagnetic lens 21 and the mask incident side electrostatic deflector 40, and the length in the optical axis direction is larger than that of the mask incident side electrostatic deflector 40. Between the first correction electrostatic deflector 43 and the mask output side first electrostatic deflector 41 and the mask output side second electrostatic deflector 42 with their central axes aligned with the optical axis AX. Alternatively, it is arranged between the mask emitting side first electrostatic deflector 41 and the second electromagnetic lens 22, and the length in the optical axis direction is the mask emitting side first electrostatic deflector 41 and the mask emitting side second. Second correction electrostatic deflector 4 shorter than any of the electrostatic deflectors 42
4 and the first correction electrostatic deflector 43
The deviation of the trajectory of the charged particle beam emitted from the mask entrance side electrostatic deflector 40 due to the positional deviation of the crossover image CO1 is corrected, and the second correction electrostatic deflector 44 corrects the second crossover image. The deviation of the trajectory of the charged particle beam emitted from the second electrostatic deflector 42 on the mask emission side due to the positional deviation of CO2 is corrected.

【００１５】この第１態様によれば、周囲温度の変動に
よる熱膨張の変動や不図示の鏡筒の外側の大気圧の変動
等により、電磁レンズに加わるストレスが変動し、ま
た、荷電粒子銃の電極消耗量が増加して、第１クロスオ
ーバ像及び第２クロスオーバ像の位置が変動しても、上
記補正により、マスク出射側第２静電偏向器を通った荷
電粒子ビームは、静電偏向器の偏向量によらず略光軸上
を通るので、ステンシルマスク上の透過孔パターン選択
の際にステップ変化する偏向量に対し、アパーチャ上及
び露光対象物上での荷電粒子ビーム位置の変動が小さ
く、露光対象物上の荷電粒子ビーム照射位置精度が向上
し、かつ、該ステップ変化の際に必要な整定待ち時間を
短縮することができる。According to the first aspect, the stress applied to the electromagnetic lens fluctuates due to fluctuations in thermal expansion due to fluctuations in ambient temperature, fluctuations in atmospheric pressure outside the lens barrel (not shown), and the charged particle gun. Even if the electrode consumption amount of the second crossover image is increased and the positions of the first crossover image and the second crossover image are changed, the charged particle beam that has passed through the second electrostatic deflector on the mask emission side is statically corrected by the above correction. Since the light passes through the optical axis substantially regardless of the deflection amount of the electric deflector, the charged particle beam position on the aperture and the exposure target object is changed with respect to the deflection amount that changes stepwise when selecting the transmission hole pattern on the stencil mask. The fluctuation is small, the accuracy of the charged particle beam irradiation position on the exposure target is improved, and the settling waiting time required when the step is changed can be shortened.

【００１６】アパーチャ上及び露光対象物上での偏向能
率は、マスク入射側静電偏向器、マスク出射側第１静電
偏向器及びマスク出射側第２静電偏向器静電偏向器より
も第１補正静電偏向器及び第２補正静電偏向器の方が大
きく、また、第１補正静電偏向器及び第２補正静電偏向
器は小さな誤差の補正用であるので、上記ステップ変化
の際に第１補正静電偏向器及び第２補正静電偏向器によ
り高速に補正することができ、これにより整定待ち時間
短縮の効果が大となる。The deflection efficiencies on the aperture and the exposure object are higher than those of the mask entrance side electrostatic deflector, the mask exit side first electrostatic deflector and the mask exit side second electrostatic deflector. The first correction electrostatic deflector and the second correction electrostatic deflector are larger, and the first correction electrostatic deflector and the second correction electrostatic deflector are for correcting a small error. At this time, the first correction electrostatic deflector and the second correction electrostatic deflector can perform high-speed correction, which greatly reduces the settling waiting time.

【００１７】また、第１クロスオーバ像が第１補正静電
偏向器から離れており、かつ、第１補正静電偏向器は小
さな誤差の補正用であるので、ステンシルマスク上にお
ける、第１補正静電偏向器の偏向能率はマスク入射側静
電偏向器静電偏向器のそれより相当小さく、ステンシル
マスク上のパターン選択位置に対する第１補正静電偏向
器の影響は小さい。Further, since the first crossover image is separated from the first correction electrostatic deflector, and the first correction electrostatic deflector is for correcting a small error, the first correction on the stencil mask is performed. The deflection efficiency of the electrostatic deflector is considerably smaller than that of the electrostatic entrance deflector of the mask entrance side, and the influence of the first correction electrostatic deflector on the pattern selection position on the stencil mask is small.

【００１８】第１発明の第２態様では、例えば図６にお
いて、上記荷電粒子ビーム露光装置は、上記マスク入射
側静電偏向器が、中心軸を上記光軸に一致させて、上記
第１電磁レンズと上記第２電磁レンズとの間の該第１電
磁レンズ側に、光軸方向中央点と該第１電磁レンズとの
間に上記第１クロスオーバ像が存在するように配置され
たマスク入射側第１静電偏向器１４２と、中心軸を該光
軸に一致させて、該第１電磁レンズと該第２電磁レンズ
との間の該第２電磁レンズ側に配置されたマスク入射側
第２静電偏向器１４１とを有し、さらに、中心軸を上記
光軸に一致させて、上記マスク入射側第１静電偏向器と
上記マスク入射側第２静電偏向器との間又は該マスク入
射側第２静電偏向器と上記第２電磁静電偏向器との間に
配置され、光軸方向長さが該マスク入射側第１静電偏向
器及び該マスク入射側第２静電偏向器のいずれよりもよ
りも短い第１補正静電偏向器１４４と、中心軸を該光軸
に一致させて、上記マスク出射側第１静電偏向器と上記
マスク出射側第２静電偏向器との間又は該マスク出射側
第１静電偏向器と上記第２電磁レンズとの間に配置さ
れ、光軸方向長さが該マスク出射側第１静電偏向器及び
該マスク出射側第２静電偏向器のいずれよりも短い第２
補正静電偏向器４４とを有し、増幅回路の出力電圧を該
マスク入射側第１静電偏向器と該マスク入射側第２静電
偏向器とに共通に印加し、該マスク入射側第１静電偏向
器に対し、該光軸を通って入射する上記荷電粒子ビーム
を偏向させ、該マスク入射側第２静電偏向器に対し、該
荷電粒子ビームを、出射する該荷電粒子ビームを進行方
向反対側へ延長させた線が該第１クロスオーバ像の位置
を略通るように偏向させ、該第１補正静電偏向器によ
り、該第１クロスオーバ像の位置ずれによる、該マスク
入射側第２静電偏向器を出射した該荷電粒子ビームの軌
跡のずれを補正し、該第２補正静電偏向器により、上記
第２クロスオーバ像の位置ずれによる、該マスク出射側
第２静電偏向器を出射した該荷電粒子ビームの軌跡のず
れを補正する。In the second aspect of the first invention, for example, in FIG. 6, in the charged particle beam exposure apparatus, the mask incident side electrostatic deflector makes the central axis coincide with the optical axis, and the first electromagnetic wave is obtained. A mask incident on the first electromagnetic lens side between the lens and the second electromagnetic lens such that the first crossover image exists between the center point in the optical axis direction and the first electromagnetic lens. Side first electrostatic deflector 142, and a mask incidence side first unit disposed on the side of the second electromagnetic lens between the first electromagnetic lens and the second electromagnetic lens with the central axis aligned with the optical axis. 2 electrostatic deflector 141, and further, with the central axis aligned with the optical axis, between the mask incident side first electrostatic deflector and the mask incident side second electrostatic deflector, or It is arranged between the mask incident side second electrostatic deflector and the second electromagnetic electrostatic deflector, and the optical axis direction A first correction electrostatic deflector 144 having a length shorter than that of both the mask incident side first electrostatic deflector and the mask incident side second electrostatic deflector, and a central axis thereof aligned with the optical axis. And is arranged between the mask emitting side first electrostatic deflector and the mask emitting side second electrostatic deflector or between the mask emitting side first electrostatic deflector and the second electromagnetic lens, A second whose length in the direction of the optical axis is shorter than both of the mask emitting side first electrostatic deflector and the mask emitting side second electrostatic deflector
A correction electrostatic deflector 44 is provided, and the output voltage of the amplifier circuit is applied commonly to the mask incident side first electrostatic deflector and the mask incident side second electrostatic deflector, and the mask incident side first electrostatic deflector is applied. The charged particle beam incident through the optical axis is deflected by one electrostatic deflector, and the charged particle beam is emitted by the second electrostatic deflector on the mask incident side. The line extended to the opposite side in the traveling direction is deflected so as to substantially pass through the position of the first crossover image, and the mask is incident by the first correction electrostatic deflector due to the position shift of the first crossover image. The deviation of the locus of the charged particle beam emitted from the second side electrostatic deflector is corrected, and the second correction electrostatic deflector causes the position shift of the second crossover image to cause the mask emission side second static image. The deviation of the trajectory of the charged particle beam emitted from the electric deflector is corrected.

【００１９】この第２態様によっても、上記第１態様と
同様の効果が得られる。第１発明の第３態様では、上記
マスク出射側第１静電偏向器及び上記マスク出射側第２
静電偏向器の偏向量を０にした状態で上記第１電磁レン
ズの強度を変化させ、上記マスク入射側静電偏向器の偏
向量に対する上記アパーチャの通過電流が極小となる該
第１電磁レンズの強度Ａ１を求め、該マスク入射側静電
偏向器の偏向量を０にした状態で該第１電磁レンズの強
度を変化させ、該マスク出射側第１静電偏向器及び該マ
スク出射側第２静電偏向器に同一電圧を印加しその偏向
量に対する該アパーチャの通過電流が極小となる該第１
電磁レンズの強度Ａ２を求め、上記第１補正静電偏向器
に印加する電圧と上記第２補正静電偏向器に印加する電
圧との比Ｍ：Ｎに対し、該第１電磁レンズの強度Ｌを、 Ｌ＝（Ｍ・Ａ１＋Ｎ・Ａ２）／（Ｍ＋Ｎ） とする。According to the second aspect, the same effect as that of the first aspect can be obtained. In a third aspect of the first invention, the mask emitting side first electrostatic deflector and the mask emitting side second
The intensity of the first electromagnetic lens is changed in a state where the deflection amount of the electrostatic deflector is 0, and the passing current of the aperture with respect to the deflection amount of the mask incident side electrostatic deflector is minimized. Strength A1 of the mask incident side electrostatic deflector, and changing the intensity of the first electromagnetic lens with the deflection amount of the mask incident side electrostatic deflector set to 0, When the same voltage is applied to the two electrostatic deflectors, the passing current of the aperture with respect to the deflection amount becomes the minimum.
The strength A2 of the electromagnetic lens is obtained, and the strength L of the first electromagnetic lens is compared with the ratio M: N of the voltage applied to the first correction electrostatic deflector and the voltage applied to the second correction electrostatic deflector. Is L = (M · A1 + N · A2) / (M + N).

【００２０】第１電磁レンズの強度がＡ１のときには第
１クロスオーバ像の位置誤差は０となるが第２クロスオ
ーバ像の位置に誤差があり、第１電磁レンズの強度がＡ
２のときには第２クロスオーバ像の位置誤差は０となる
が第１クロスオーバ像の位置に誤差があるので、上記補
正のための第１電磁レンズの好ましいレンズ強度ＬはＡ
１でもＡ２でもない。もし、Ｍ／（Ｍ＋Ｎ）＞Ｎ／（Ｍ
＋Ｎ）であれば、好ましいレンズ強度Ｌは、Ａ２よりも
Ａ１に近い値であると考えられ、逆に、Ｍ／（Ｍ＋Ｎ）
＜Ｎ／（Ｍ＋Ｎ）であれば、好ましいレンズ強度Ｌは、
Ａ１よりもＡ２に近い値であると考えられる。このよう
なことから、上式のレンズ強度Ｌは比較的好ましいと言
える。When the intensity of the first electromagnetic lens is A1, the position error of the first crossover image is 0, but there is an error in the position of the second crossover image, and the intensity of the first electromagnetic lens is A.
When it is 2, the position error of the second crossover image is 0, but there is an error in the position of the first crossover image. Therefore, the preferable lens strength L of the first electromagnetic lens for the above correction is A
Neither 1 nor A2. If M / (M + N)> N / (M
+ N), the preferable lens strength L is considered to be a value closer to A1 than A2, and conversely, M / (M + N)
If <N / (M + N), the preferable lens strength L is
It is considered that the value is closer to A2 than A1. From the above, it can be said that the above lens strength L is relatively preferable.

【００２１】この第３態様では、第１補正静電偏向器及
び第２補正静電偏向器のみではなく、これらを第１電磁
レンズの強度と有機的に関係付けて補正を行っているの
で、補正がより正確に行われる。第１発明の第４態様で
は、上記比Ｍ：Ｎに初期値を与えて上記式により第１電
磁レンズの強度Ｌを求め、該第１電磁レンズの強度を該
Ｌにし上記マスク出射側第１静電偏向器及び上記マスク
出射側第２静電偏向器の偏向量を０にし上記マスク入射
側静電偏向器の偏向量を０にしない状態で、上記第１補
正静電偏向器への第１印加電圧を変化させ、該第１印加
電圧に対する上記アパーチャの通過電流が極小となる該
第１印加電圧ＶＳ１を求め、該第１電磁レンズの強度を
該Ｌにし該マスク入射側静電偏向器の偏向量を０にし該
マスク出射側第１静電偏向器及び該マスク出射側第２静
電偏向器に０でない同一電圧を印加した状態で、上記第
２補正静電偏向器への第２印加電圧を変化させ、該第２
印加電圧に対する該アパーチャの通過電流が極小となる
該第２印加電圧ＶＳ２を求め、該第１印加電圧ＶＳ１と
該第２印加電圧ＶＳ２とに基づいて上記比Ｍ：Ｎを更新
し、更新した該比Ｍ：Ｎ及び該式に基づいて該第１電磁
レンズの強度Ｌを更新する。In the third mode, not only the first correction electrostatic deflector and the second correction electrostatic deflector but also these are organically correlated with the strength of the first electromagnetic lens to perform the correction. The correction is more accurate. In a fourth aspect of the first aspect of the invention, an initial value is given to the ratio M: N to obtain the strength L of the first electromagnetic lens by the above equation, the strength of the first electromagnetic lens is set to the L, and the mask emission side first When the deflection amount of the electrostatic deflector and the second electrostatic deflector on the mask exit side is set to 0 and the deflection amount of the electrostatic deflector on the mask entrance side is not set to 0, the first correction electrostatic deflector 1 The applied voltage is changed to obtain the first applied voltage VS1 at which the current passing through the aperture with respect to the first applied voltage is minimized, and the strength of the first electromagnetic lens is set to the L to set the mask incident side electrostatic deflector. To the second correction electrostatic deflector in the state where the same non-zero voltage is applied to the mask emission side first electrostatic deflector and the mask emission side second electrostatic deflector. By changing the applied voltage, the second
The second applied voltage VS2 at which the passing current of the aperture with respect to the applied voltage is minimized is obtained, and the ratio M: N is updated based on the first applied voltage VS1 and the second applied voltage VS2, and the updated value is updated. The intensity L of the first electromagnetic lens is updated based on the ratio M: N and the equation.

【００２２】この第４態様によれば、第１電磁レンズの
比較的好ましいレンズ強度Ｌを実験的に求めることがで
きる。第１発明の第５態様では、例えば図２において、
上記マスク出射側第１静電偏向器４１又は上記マスク出
射側第２静電偏向器４２を上記光軸ＡＸの回りに回転さ
せてその回転角を調整する。According to the fourth aspect, the relatively preferable lens strength L of the first electromagnetic lens can be experimentally obtained. In the fifth aspect of the first invention, for example, in FIG.
The mask emission side first electrostatic deflector 41 or the mask emission side second electrostatic deflector 42 is rotated around the optical axis AX to adjust its rotation angle.

【００２３】マスク出射側第１静電偏向器とマスク出射
側第２静電偏向器とには同一増幅回路の出力電圧が印加
されるので、光軸の回りの回転位置誤差の電気的補正
は、マスク出射側第１静電偏向器とマスク出射側第２静
電偏向器との一方しかできないが、この第５態様によれ
ば、他方について機械的補正をすることができる。第１
発明の第６態様では、上記マスク入射側第１静電偏向器
又は上記マスク入射側第２静電偏向器を上記光軸の回り
に回転させてその回転角を調整する。Since the output voltage of the same amplifier circuit is applied to the mask emission side first electrostatic deflector and the mask emission side second electrostatic deflector, it is possible to electrically correct the rotational position error around the optical axis. Although only one of the mask-exiting-side first electrostatic deflector and the mask-exiting-side second electrostatic deflector can be used, according to the fifth aspect, the other can be mechanically corrected. First
In the sixth aspect of the invention, the mask incident side first electrostatic deflector or the mask incident side second electrostatic deflector is rotated around the optical axis to adjust the rotation angle.

【００２４】この第６態様によっても、第５態様と同様
な効果が得られる。第１発明の第７態様では、例えば図
８において、増幅回路５１の出力電圧を、上記マスク入
射側静電偏向器４０と上記マスク出射側第１静電偏向器
４１と上記マスク出射側第２静電偏向器４２とに共通に
印加する。マスク入射側静電偏向器と、マスク出射側第
１静電偏向器及びマスク出射側第２静電偏向器とに、異
なる増幅回路の出力電圧を印加すると、各増幅回路の過
渡特性が異なるので、整定待ち時間を最も長い整定待ち
時間に合わせる必要があり、整定待ち時間の決定が煩雑
であるが、この第７態様によれば、増幅回路の出力電圧
がこれら静電偏向器に共通に印加されるので、整定待ち
時間の決定が容易になり、露光装置使用のスループット
が向上する。According to the sixth aspect, the same effect as the fifth aspect can be obtained. In the seventh aspect of the first invention, for example, in FIG. 8, the output voltage of the amplifier circuit 51 is changed to the mask incident side electrostatic deflector 40, the mask emitting side first electrostatic deflector 41, and the mask emitting side second. The voltage is commonly applied to the electrostatic deflector 42. When output voltages of different amplifier circuits are applied to the mask incident side electrostatic deflector, and the mask emitting side first electrostatic deflector and the mask emitting side second electrostatic deflector, the transient characteristics of each amplifier circuit are different. It is necessary to match the settling wait time with the longest settling wait time, and the setting wait time is complicated to determine. However, according to the seventh aspect, the output voltage of the amplifier circuit is commonly applied to these electrostatic deflectors. Therefore, the settling waiting time can be easily determined, and the throughput of the exposure apparatus can be improved.

【００２５】第１発明の第８態様では、例えば図９にお
いて、上記荷電粒子ビーム露光装置はさらに、記憶手段
８１、８２と、デジタル／アナログ変換器７１と、該デ
ジタル／アナログ変換器７１の出力を増幅して上記マス
ク入射側静電偏向器に印加する増幅回路５０とを有し、
上記ステンシルマスク１２上の各透過孔パターンについ
て、露光対象物上への荷電粒子ビーム照射の際の過渡的
な荷電粒子ビーム照射量を最大にするための補正値パタ
ーンを該記憶手段に予め格納させておき、該ステンシル
マスク１２上の透過孔パターンを選択するために該デジ
タル／アナログ変換器７１へ供給されるデータＤ１が変
化する毎に、該データＤ１に対応した補正値パターンを
該記憶手段から読み出させ、該記憶手段から読み出され
た値Ｄ３と該露光対象物１１上への該荷電粒子ビームの
照射が定常状態になったときの補正値Ｄ２との和に基づ
いて、上記第１補正静電偏向器４３に駆動電圧を印加す
る。In the eighth aspect of the first invention, for example, in FIG. 9, the charged particle beam exposure apparatus further includes storage means 81 and 82, a digital / analog converter 71, and an output of the digital / analog converter 71. And an amplifier circuit 50 that amplifies and applies to the mask incident side electrostatic deflector,
For each transmission hole pattern on the stencil mask 12, a correction value pattern for maximizing a transient charged particle beam irradiation amount at the time of irradiation of the charged particle beam on the exposure object is stored in advance in the storage means. Every time the data D1 supplied to the digital / analog converter 71 for selecting the transmission hole pattern on the stencil mask 12 changes, a correction value pattern corresponding to the data D1 is stored in the storage means. Based on the sum of the value D3 read out from the storage means and the correction value D2 when the irradiation of the charged particle beam onto the exposure object 11 is in a steady state, the first value A drive voltage is applied to the correction electrostatic deflector 43.

【００２６】第１補正静電偏向器のアパーチャ上での偏
向能率は、マスク入射側静電偏向器のそれよりも大き
く、また、第１補正静電偏向器は小さな誤差の補正用で
あるので、マスク入射側静電偏向器よりも相当高速に第
１補正静電偏向器を駆動させることができ、この第８態
様によれば、上記ステップ変化の際にマスク入射側静電
偏向器への印加電圧の３乗に略比例して変化するアパー
チャ通過電流の該変化を低減でき、整定待ち時間が短縮
して露光のスループットが向上する。The deflection efficiency of the first correction electrostatic deflector on the aperture is larger than that of the mask entrance side electrostatic deflector, and the first correction electrostatic deflector is for correcting a small error. The first correction electrostatic deflector can be driven at a considerably higher speed than the mask incident side electrostatic deflector. According to the eighth aspect, the mask incident side electrostatic deflector can be driven when the step changes. The change in the aperture passing current, which changes substantially in proportion to the cube of the applied voltage, can be reduced, the settling waiting time is shortened, and the exposure throughput is improved.

【００２７】第１発明の第９態様では、上記荷電粒子ビ
ーム露光装置は、上記記憶手段が第１メモリと第２メモ
リとを有しており、上記ステンシルマスク上の各透過孔
パターンについて、該露光対象物上への荷電粒子ビーム
照射の際の過渡的な荷電粒子ビーム照射量のパターンを
該第１メモリに格納させ、該ステンシルマスク上の各透
過孔パターンについて、該荷電粒子ビーム照射量に対応
した補正値を該第２メモリに格納させ、該第１メモリの
出力データにより該第２メモリをアドレス指定する。In a ninth aspect of the first aspect of the invention, in the charged particle beam exposure apparatus, the storage means has a first memory and a second memory, and for each transmission hole pattern on the stencil mask, A pattern of a transient charged particle beam irradiation amount at the time of irradiation of the charged particle beam on the exposure object is stored in the first memory, and the charged particle beam irradiation amount is set for each transmission hole pattern on the stencil mask. The corresponding correction value is stored in the second memory, and the second memory is addressed by the output data of the first memory.

【００２８】この第９態様によれば、露光対象物上への
荷電粒子ビーム照射の際の過渡的な荷電粒子ビーム照射
量のパターン、例えば２次電子検出量のパターンが格納
された第１メモリを用いているので、荷電粒子ビーム照
射量と補正値との関係を把握でき、補正値をより好まし
い値に更新し易くなる。第２発明に係る荷電粒子ビーム
露光装置では、例えば図１に示す如く、第１電磁レン
ズ、第２電磁レンズ、第３電磁レンズ及びアパーチャが
互いに光軸を一致させてこの順に配置され、荷電粒子ビ
ームの横断面を整形する透過孔パターンが複数形成され
たステンシルマスクが略第２電磁レンズ位置に該光軸に
垂直に配置され、荷電粒子ビームが該第１電磁レンズ
内、該第２電磁レンズ内、該ステンシルマスク上の選択
された透過孔パターン、該第３電磁レンズ内及び該アパ
ーチャをこの順に通って露光対象物上に照射され、該第
１電磁レンズと該第２電磁レンズとの間にガンクロスオ
ーバの第１クロスオーバ像が存在し、該第２電磁レンズ
と該第３電磁レンズとの間かつ該第３電磁レンズ側に該
ガンクロスオーバの第２クロスオーバ像が存在する荷電
粒子ビーム露光装置において、中心軸を該光軸に一致さ
せて、該第１電磁レンズと該第２電磁レンズとの間に配
置され、出射する該荷電粒子ビームを進行方向反対側へ
延長させた線が該第１クロスオーバ像の位置を略通るよ
うに偏向するためのマスク入射側静電偏向器と、中心軸
を該光軸に一致させて、該第２電磁レンズと該第３電磁
レンズとの間の該第２電磁レンズ側に配置され、該荷電
粒子ビームを光軸側へ偏向させるためのマスク出射側第
１静電偏向器と、中心軸を該光軸に一致させて、該第２
電磁レンズと該第３電磁レンズとの間の該第３電磁レン
ズ側に、該荷電粒子ビームが光軸方向略中央点へ向けて
入射するように且つ該光軸方向中央点と該第３電磁レン
ズとの間に該第２クロスオーバ像が存在するように配置
され、該荷電粒子ビームを偏向させて光軸上に略一致さ
せるためのマスク出射側第２静電偏向器と、出力端が該
マスク出射側第１静電偏向器と該マスク出射側第２静電
偏向器とに共通に接続された増幅回路とを有する。According to the ninth aspect, the first memory in which the pattern of the transient charged particle beam irradiation amount, for example, the secondary electron detection amount pattern when the charged particle beam is irradiated onto the object to be exposed is stored. , The relationship between the charged particle beam irradiation amount and the correction value can be grasped, and the correction value can be easily updated to a more preferable value. In the charged particle beam exposure apparatus according to the second invention, for example, as shown in FIG. 1, the first electromagnetic lens, the second electromagnetic lens, the third electromagnetic lens and the aperture are arranged in this order with their optical axes aligned with each other. A stencil mask having a plurality of transmission hole patterns for shaping the beam cross section is disposed substantially at a position of the second electromagnetic lens perpendicular to the optical axis, and the charged particle beam is in the first electromagnetic lens and the second electromagnetic lens. The selected object is irradiated through the selected transmission hole pattern on the stencil mask, the third electromagnetic lens and the aperture in this order onto the object to be exposed, and between the first electromagnetic lens and the second electromagnetic lens. There is a first crossover image of the gun crossover, and a second crossover image of the gun crossover exists between the second electromagnetic lens and the third electromagnetic lens and on the side of the third electromagnetic lens. In the charged particle beam exposure apparatus, the central axis of the charged particle beam exposure apparatus is arranged between the first electromagnetic lens and the second electromagnetic lens, and the emitted charged particle beam is extended to the opposite side in the traveling direction. A mask incident side electrostatic deflector for deflecting the generated line so as to substantially pass through the position of the first crossover image, a central axis thereof aligned with the optical axis, and the second electromagnetic lens and the third electromagnetic lens. A mask output side first electrostatic deflector for deflecting the charged particle beam to the optical axis side, which is arranged on the second electromagnetic lens side between the electromagnetic lens and the central axis, is aligned with the optical axis. , The second
On the side of the third electromagnetic lens between the electromagnetic lens and the third electromagnetic lens, the charged particle beam is incident toward a substantially central point in the optical axis direction, and the central point in the optical axis direction and the third electromagnetic field. A second electrostatic deflector on the mask emission side for arranging the second crossover image so as to exist between the lens and the second electrostatic deflector for deflecting the charged particle beam so that the charged particle beam substantially coincides with the optical axis. The mask emission side first electrostatic deflector and the mask emission side second electrostatic deflector are commonly connected to an amplifier circuit.

【００２９】第２発明の第１態様では、例えば図１に示
す如く、上記マスク入射側静電偏向器は、光軸方向中央
点が上記第１クロスオーバ像の位置に略一致するように
配置されている。第２発明の第２態様では、例えば図１
に示す如く、中心軸を上記光軸に一致させて、上記マス
ク入射側静電偏向器と上記第２電磁レンズとの間又は上
記第１電磁レンズと該マスク入射側静電偏向器との間に
配置され、光軸方向長さが該マスク入射側静電偏向器よ
りも短い第１補正静電偏向器と、中心軸を該光軸に一致
させて、上記マスク出射側第１静電偏向器と上記マスク
出射側第２静電偏向器との間又は該マスク出射側第１静
電偏向器と上記第２電磁レンズとの間に配置され、光軸
方向長さが該マスク出射側第１静電偏向器及び該マスク
出射側第２静電偏向器のいずれよりも短い第２補正静電
偏向器とを有し、該第１補正静電偏向器は、上記第１ク
ロスオーバ像の位置ずれによる、該マスク入射側静電偏
向器を出射した該荷電粒子ビームの軌跡のずれを補正す
るためのものであり、該第２補正静電偏向器は、上記第
２クロスオーバ像の位置ずれによる、該マスク出射側第
２静電偏向器を出射した該荷電粒子ビームの軌跡のずれ
を補正するためのものである。In the first aspect of the second invention, for example, as shown in FIG. 1, the mask entrance side electrostatic deflector is arranged so that the center point in the optical axis direction substantially coincides with the position of the first crossover image. Has been done. In the second aspect of the second invention, for example, FIG.
As shown in FIG. 5, the central axis is made to coincide with the optical axis, and between the mask incident side electrostatic deflector and the second electromagnetic lens or between the first electromagnetic lens and the mask incident side electrostatic deflector. And a first correction electrostatic deflector having a length in the optical axis direction shorter than that of the mask entrance side electrostatic deflector, and the mask exit side first electrostatic deflector with its central axis aligned with the optical axis. Between the mask output side second electrostatic deflector or the mask output side first electrostatic deflector and the second electromagnetic lens, and the length in the optical axis direction is the mask output side first electrostatic deflector. 1 electrostatic deflector and a second correction electrostatic deflector that is shorter than either the mask emission side second electrostatic deflector, and the first correction electrostatic deflector is configured to detect the first crossover image. It is for correcting the deviation of the trajectory of the charged particle beam emitted from the electrostatic deflector on the mask entrance side due to the positional deviation. The second correction electrostatic deflector is for correcting the deviation of the trajectory of the charged particle beam emitted from the mask emission side second electrostatic deflector due to the positional deviation of the second crossover image. is there.

【００３０】第２発明の第３態様では、例えば図６に示
す如く、上記マスク入射側静電偏向器は、中心軸を上記
光軸に一致させて、上記第１電磁レンズと上記第２電磁
レンズとの間の該第１電磁レンズ側に、光軸方向中央点
と該第１電磁レンズとの間に上記第１クロスオーバ像が
存在するように配置され、該光軸を通って入射する上記
荷電粒子ビームを偏向させるためのマスク入射側第１静
電偏向器と、中心軸を該光軸に一致させて、該第１電磁
レンズと該第２電磁レンズとの間の該第２電磁レンズ側
に配置され、出射する該荷電粒子ビームを進行方向反対
側へ延長させた線が該第１クロスオーバ像の位置を略通
るように偏向するためのマスク入射側第２静電偏向器と
を有し、さらに、出力端が該マスク入射側第１静電偏向
器と該マスク入射側第２静電偏向器とに共通に接続され
た増幅回路を有する。In the third aspect of the second invention, as shown in FIG. 6, for example, in the mask incident side electrostatic deflector, the central axis is made to coincide with the optical axis, and the first electromagnetic lens and the second electromagnetic lens are arranged. It is arranged on the side of the first electromagnetic lens between the lens and the lens so that the first crossover image exists between the center point in the optical axis direction and the first electromagnetic lens, and is incident through the optical axis. A mask-incident-side first electrostatic deflector for deflecting the charged particle beam, and a second electromagnetic field between the first electromagnetic lens and the second electromagnetic lens with a central axis aligned with the optical axis. A mask incident side second electrostatic deflector disposed on the lens side for deflecting a line extending the emitted charged particle beam to the opposite side in the traveling direction so as to pass substantially through the position of the first crossover image; Further, the output end is provided with the mask incidence side first electrostatic deflector and the mask incidence side. Having an amplifier circuit which is connected in common to a second electrostatic deflector.

【００３１】第２発明の第４態様では、例えば図６に示
す如く、上記第３態様において、中心軸を上記光軸に一
致させて、上記マスク入射側第１静電偏向器と上記マス
ク入射側第２静電偏向器との間又は該マスク入射側第２
静電偏向器と上記第２電磁静電偏向器との間に配置さ
れ、光軸方向長さが該マスク入射側第１静電偏向器及び
該マスク入射側第２静電偏向器のいずれよりもよりも短
い第１補正静電偏向器と、中心軸を該光軸に一致させ
て、上記マスク出射側第１静電偏向器と上記マスク出射
側第２静電偏向器との間又は該マスク出射側第１静電偏
向器と上記第２電磁レンズとの間に配置され、光軸方向
長さが該マスク出射側第１静電偏向器及び該マスク出射
側第２静電偏向器のいずれよりも短い第２補正静電偏向
器とを有し、該第１補正静電偏向器は、上記第１クロス
オーバ像の位置ずれによる、該マスク入射側第２静電偏
向器を出射した該荷電粒子ビームの軌跡のずれを補正す
るためのものであり、該第２補正静電偏向器は、上記第
２クロスオーバ像の位置ずれによる、該マスク出射側第
２静電偏向器を出射した該荷電粒子ビームの軌跡のずれ
を補正するためのものである。In the fourth aspect of the second invention, as shown in FIG. 6, for example, in the third aspect, the central axis is made to coincide with the optical axis, and the first electrostatic deflector on the mask incidence side and the mask incidence side. Between the second electrostatic deflector on the side and the second side on the mask incidence side
It is arranged between the electrostatic deflector and the second electromagnetic electrostatic deflector, and has a length in the optical axis direction which is larger than that of either the mask incident side first electrostatic deflector or the mask incident side second electrostatic deflector. Between the mask emission side first electrostatic deflector and the mask emission side second electrostatic deflector with the central axis aligned with the optical axis. It is arranged between the mask emission side first electrostatic deflector and the second electromagnetic lens, and has a length in the optical axis direction of the mask emission side first electrostatic deflector and the mask emission side second electrostatic deflector. A second correction electrostatic deflector that is shorter than either of them, and the first correction electrostatic deflector emits the mask incident side second electrostatic deflector due to the position shift of the first crossover image. The second correction electrostatic deflector is for correcting the deviation of the trajectory of the charged particle beam. Deviation due, is used to correct the deviation of the trajectory of the charged particle beam emitted the mask exit side second electrostatic deflector.

【００３２】第２発明の第５態様では、例えば図２に示
す如く、上記マスク出射側第１静電偏向器又は上記マス
ク出射側第２静電偏向器を上記光軸の回りに回転させて
その回転角を調整する調整手段を有する。第２発明の第
６態様では、上記マスク入射側第１静電偏向器又は上記
マスク入射側第２静電偏向器を上記光軸の回りに回転さ
せてその回転角を調整する調整手段を有する。In the fifth aspect of the second invention, for example, as shown in FIG. 2, the mask emitting side first electrostatic deflector or the mask emitting side second electrostatic deflector is rotated around the optical axis. It has adjusting means for adjusting the rotation angle. In a sixth aspect of the second invention, there is provided an adjusting means for rotating the mask incident side first electrostatic deflector or the mask incident side second electrostatic deflector around the optical axis and adjusting a rotation angle thereof. .

【００３３】第２発明の第７態様では、例えば図８に示
す如く、上記増幅回路の出力端は上記マスク入射側静電
偏向器にも共通に接続されている。第２発明の第８態様
では、上記第２発明の増幅回路と上記第２発明の第３態
様の増幅回路とが同一物である。第２発明の第９態様で
は、例えば図９に示す如く、上記ステンシルマスク上の
各透過孔パターンについて、露光対象物上への荷電粒子
ビーム照射の際の過渡的な荷電粒子ビーム照射量を最大
にするための補正値パターンが格納された記憶手段と、
デジタル／アナログ変換器と、該デジタル／アナログ変
換器の出力を増幅して上記マスク入射側静電偏向器に印
加する増幅回路と、該ステンシルマスク上の透過孔パタ
ーンを選択するために該デジタル／アナログ変換器へ供
給されるデータが変化する毎に、該データに対応した補
正値パターンを該記憶手段から読み出させるデータ読み
出し制御手段と、該記憶手段から読み出された値と該露
光対象物上への該荷電粒子ビームの照射が定常状態にな
ったときの補正値との和に基づいて、上記第１補正静電
偏向器に駆動電圧を印加する第１補正静電偏向器駆動手
段とを有する。In the seventh aspect of the second invention, for example, as shown in FIG. 8, the output end of the amplifier circuit is commonly connected to the mask incident side electrostatic deflector. In the eighth aspect of the second invention, the amplifier circuit of the second invention and the amplifier circuit of the third aspect of the second invention are the same. In the ninth aspect of the second invention, for example, as shown in FIG. 9, the transient charged particle beam irradiation amount at the time of irradiation of the charged particle beam on the exposure target is maximized for each of the transmission hole patterns on the stencil mask. Storage means for storing a correction value pattern for
A digital / analog converter, an amplifier circuit for amplifying the output of the digital / analog converter and applying it to the mask incident side electrostatic deflector, and a digital / analog converter for selecting a transmission hole pattern on the stencil mask. Data read control means for reading a correction value pattern corresponding to the data from the storage means each time the data supplied to the analog converter changes, a value read from the storage means, and the exposure object. First correction electrostatic deflector driving means for applying a drive voltage to the first correction electrostatic deflector based on a sum with a correction value when the irradiation of the charged particle beam is in a steady state. Have.

【００３４】第２発明の第１０態様では、上記記憶手段
は、上記ステンシルマスク上の各透過孔パターンについ
て、該露光対象物上への荷電粒子ビーム照射の際の過渡
的な荷電粒子ビーム照射量のパターンが格納された第１
メモリと、該ステンシルマスク上の各透過孔パターンに
ついて、該荷電粒子ビーム照射量に対応した補正値が格
納され、該第１メモリの出力データによりアドレス指定
される第２メモリとを有する。In a tenth aspect of the second aspect of the present invention, the storage means, for each transmission hole pattern on the stencil mask, a transient charged particle beam irradiation amount at the time of irradiation of the charged particle beam on the object to be exposed. The first stored pattern
It has a memory and a second memory in which a correction value corresponding to the charged particle beam irradiation amount is stored for each transmission hole pattern on the stencil mask and which is addressed by the output data of the first memory.

【００３５】[0035]

【発明の実施の形態】以下、図面に基づいて本発明の実
施形態を説明する。 ［第１実施形態］図１は、本発明の第１実施形態の荷電
粒子ビーム露光装置の概略構成を示す。荷電粒子銃１０
から放射された荷電粒子ビーム、例えば電子ビームによ
り、半導体ウェーハ１１上のレジスト膜が露光される。
ステンシルマスク１２には、使用頻度の高い複数の透過
孔パターンが形成されており、選択した透過孔パターン
に荷電粒子ビームを通過させることにより、その横断面
が整形され、ワンショットで微細パターンが半導体ウェ
ーハ１１上に縮小投影される。Embodiments of the present invention will be described below with reference to the drawings. [First Embodiment] FIG. 1 shows the schematic arrangement of a charged particle beam exposure apparatus according to the first embodiment of the present invention. Charged particle gun 10
The resist film on the semiconductor wafer 11 is exposed by a charged particle beam, for example, an electron beam emitted from the semiconductor wafer 11.
A plurality of frequently used transmission hole patterns are formed on the stencil mask 12, and the cross section is shaped by passing the charged particle beam through the selected transmission hole pattern, so that a fine pattern can be formed into a semiconductor in one shot. The image is reduced and projected onto the wafer 11.

【００３６】１３は、電磁レンズ２１〜２５を通った荷
電粒子ビームの縦断面を光軸ＡＸに直角な方向に拡大し
て示したものである。電磁レンズ２１Ａは、電磁レンズ
２１Ａと電磁レンズ２１Ｂとからなり、両電磁レンズ間
にアパーチャ板３０が配置され、電磁レンズ２１Ａで平
行化された荷電粒子ビームがアパーチャ板３０の正方形
孔を通って、ステンシルマスク１２上で１つの透過孔パ
ターンのみを通過するサイズにされる。電磁レンズ２２
は、電磁レンズ２２Ａと電磁レンズ２２Ｂとからなり、
両電磁レンズ間にステンシルマスク１２が配置され、電
磁レンズ２２Ａで平行化された荷電粒子ビームがステン
シルマスク１２上の選択された透過孔パターンを通過す
る。縮小投影のための電磁レンズ２３と電磁レンズ２４
との間には、円孔が形成されたアパーチャ板３１が配置
されている。電磁レンズ２５は、対物レンズであり、荷
電粒子ビームを半導体ウェーハ１１上に収束させる。Reference numeral 13 shows a longitudinal section of the charged particle beam passing through the electromagnetic lenses 21 to 25 in an enlarged manner in a direction perpendicular to the optical axis AX. The electromagnetic lens 21A includes an electromagnetic lens 21A and an electromagnetic lens 21B, an aperture plate 30 is disposed between the electromagnetic lenses, and the charged particle beam collimated by the electromagnetic lens 21A passes through a square hole of the aperture plate 30. The stencil mask 12 is sized to pass only one through hole pattern. Electromagnetic lens 22
Consists of an electromagnetic lens 22A and an electromagnetic lens 22B,
A stencil mask 12 is arranged between both electromagnetic lenses, and the charged particle beam collimated by the electromagnetic lens 22A passes through a selected transmission hole pattern on the stencil mask 12. Electromagnetic lens 23 and electromagnetic lens 24 for reduced projection
An aperture plate 31 having a circular hole is disposed between and. The electromagnetic lens 25 is an objective lens and focuses the charged particle beam on the semiconductor wafer 11.

【００３７】荷電粒子ビームに対する半導体ウェーハ１
１上の目標位置への偏向は、主偏向器３２及び副偏向器
３３により行われる。ガンクロスオーバＣＯのクロスオ
ーバ像ＣＯ１、ＣＯ２及びＣＯ３はそれぞれ、電磁レン
ズ２１Ｂと電磁レンズ２２Ａとの間、電磁レンズ２２Ｂ
と電磁レンズ２３との間及び電磁レンズ２３と電磁レン
ズ２４との間に存在する。Semiconductor wafer 1 for charged particle beam
Deflection to the target position on 1 is performed by the main deflector 32 and the sub deflector 33. The crossover images CO1, CO2, and CO3 of the gun crossover CO are between the electromagnetic lens 21B and the electromagnetic lens 22A, and the electromagnetic lens 22B, respectively.
And the electromagnetic lens 23 and between the electromagnetic lens 23 and the electromagnetic lens 24.

【００３８】光軸ＡＸを通る荷電粒子ビームを偏向させ
てステンシルマスク１２上の選択された透過孔パターン
に通すために、電磁レンズ２１Ｂと電磁レンズ２２Ａと
の間に偏向器４０が、その光軸方向中央点をクロスオー
バ像ＣＯ１の位置に一致させて配置されている。電磁レ
ンズ２２Ｂを通った荷電粒子ビームを偏向させて光軸Ａ
Ｘ上を通らせるために、電磁レンズ２２Ｂと電磁レンズ
２３との間に偏向器４１及び４２が配置されている。偏
向器４２は、電磁レンズ２３側に配置されているが、ク
ロスオーバ像ＣＯ２が電磁レンズ２３の上端から上方数
ｍｍの位置にあるので、偏向器４２の光軸方向中央点を
クロスオーバ像ＣＯ２の位置に一致させることができ
ず、このため、偏向器４１が電磁レンズ２２Ｂ側に配置
されている。In order to deflect the charged particle beam passing through the optical axis AX to pass through the selected transmission hole pattern on the stencil mask 12, a deflector 40 is provided between the electromagnetic lens 21B and the electromagnetic lens 22A. The center point in the direction is aligned with the position of the crossover image CO1. The charged particle beam that has passed through the electromagnetic lens 22B is deflected so that the optical axis A
Deflectors 41 and 42 are arranged between the electromagnetic lens 22B and the electromagnetic lens 23 so as to pass over X. The deflector 42 is arranged on the electromagnetic lens 23 side, but since the crossover image CO2 is located at a position several mm above the upper end of the electromagnetic lens 23, the center point of the deflector 42 in the optical axis direction is the crossover image CO2. Therefore, the deflector 41 is disposed on the electromagnetic lens 22B side.

【００３９】アパーチャ板３１は、その孔の中央点がク
ロスオーバ像ＣＯ３の位置に一致するように配置されて
いる。周囲温度の変動による熱膨張の変動や不図示の鏡
筒の外側の大気圧の変動等により、電磁レンズに加わる
ストレスが変動し、また、荷電粒子銃１０の電極消耗量
が増加して、クロスオーバ像ＣＯ１及びＣＯ２の位置が
僅かに変動する。これにより、又は設計値からのずれに
より、電磁レンズ２３を通った荷電粒子ビームが光軸Ａ
Ｘ上から外れるので、これを補正するために、偏向器４
０と電磁レンズ２２Ａとの間に補正偏向器４３が配置さ
れ、偏向器４１と偏向器４２との間に補正偏向器４４が
配置されている。The aperture plate 31 is arranged so that the center point of the hole coincides with the position of the crossover image CO3. The stress applied to the electromagnetic lens fluctuates due to the fluctuation of the thermal expansion due to the fluctuation of the ambient temperature and the fluctuation of the atmospheric pressure outside the lens barrel (not shown), and the electrode consumption of the charged particle gun 10 increases, so that the cross The positions of the overimages CO1 and CO2 slightly change. As a result, or due to a deviation from the design value, the charged particle beam that has passed through the electromagnetic lens 23 has an optical axis A.
Since it deviates from above X, in order to correct this, the deflector 4
The correction deflector 43 is arranged between 0 and the electromagnetic lens 22A, and the correction deflector 44 is arranged between the deflector 41 and the deflector 42.

【００４０】偏向器４０には増幅器５０の出力端が接続
され、偏向器４１及び４２には増幅器５１の出力端が共
通に接続され、補正偏向器４３及び４４にはそれぞれ増
幅器５３及び５４の出力端が接続されている。偏向器４
０〜４４は、静電型であり、対向電極には絶対値が等し
く極性が逆の電位が印加される。偏向器４０〜４４によ
る偏向角は小さいので、荷電粒子ビームの軌跡は偏向器
印加電圧に関し線形近似が成立し、偏向器４０〜４４に
印加される電圧の比は、ステンシルマスク１２上のパタ
ーン選択位置によらず一定にされる。The output terminal of the amplifier 50 is connected to the deflector 40, the output terminal of the amplifier 51 is commonly connected to the deflectors 41 and 42, and the output terminals of the amplifiers 53 and 54 are connected to the correction deflectors 43 and 44, respectively. The ends are connected. Deflector 4
Nos. 0 to 44 are electrostatic types, and potentials having the same absolute value and opposite polarities are applied to the counter electrodes. Since the deflection angles of the deflectors 40 to 44 are small, the trajectory of the charged particle beam has a linear approximation with respect to the deflector applied voltage, and the ratio of the voltages applied to the deflectors 40 to 44 is the pattern selection on the stencil mask 12. It is fixed regardless of the position.

【００４１】偏向器４１、４２及び４４のより詳細な概
略構成を図２に示す。偏向器４１、４２及び４４は、内
部電界をより均一にするために、いずれも８極構成とな
っている（図１の偏向器４０及び４３も同様）。これに
対応して、図１の増幅器５１は、増幅器５１１〜５１８
からなる。増幅器５１１〜５１８の出力端はそれぞれ、
偏向器４１の電極片４１１〜４１８に接続され、かつ、
偏向器４２の電極片４２１〜４２８に接続されている。A more detailed schematic structure of the deflectors 41, 42 and 44 is shown in FIG. The deflectors 41, 42 and 44 each have an eight-pole structure in order to make the internal electric field more uniform (the same applies to the deflectors 40 and 43 in FIG. 1). Corresponding to this, the amplifier 51 of FIG.
Consists of The output terminals of the amplifiers 511 to 518 are respectively
Is connected to the electrode pieces 411 to 418 of the deflector 41, and
It is connected to the electrode pieces 421 to 428 of the deflector 42.

【００４２】偏向器４１及び４２はそれぞれサポータ６
０及び６１により支持されている。偏向器４１、４２及
び４４は、その中心軸が光軸ＡＸに一致している（図１
の偏向器４０及び４３も同様）。偏向器４１又は４２の
光軸ＡＸの回りの回転位置の誤差は、増幅器５１１〜５
１８に供給する信号に対し座標変換を行うことにより、
電気的に補正される。しかし、偏向器４２と偏向器４１
との対応する電極片には同一増幅器の出力電圧が印加さ
れるので、この電気的補正は、偏向器４１と偏向器４２
との一方しか適用できない。そこで、サポータ６０の周
面の一部に歯６２が形成され、これにウォーム６３が噛
合されており、ウォーム６３の軸に取り付けられた摘み
６４を回すことにより、偏向器４１の回転角が機械的に
補正される。The deflectors 41 and 42 are supporters 6 respectively.
It is supported by 0 and 61. The central axes of the deflectors 41, 42 and 44 coincide with the optical axis AX (see FIG. 1).
The same applies to the deflectors 40 and 43 of the above). The error in the rotational position of the deflector 41 or 42 around the optical axis AX is caused by the amplifiers 511-5.
By performing coordinate conversion on the signal supplied to 18,
It is corrected electrically. However, the deflector 42 and the deflector 41
Since the output voltage of the same amplifier is applied to the electrode pieces corresponding to and, the electrical correction is performed by the deflector 41 and the deflector 42.
Only one can be applied. Therefore, teeth 62 are formed on a part of the peripheral surface of the supporter 60, and a worm 63 is meshed with the teeth 62. By rotating a knob 64 attached to the shaft of the worm 63, the rotation angle of the deflector 41 is changed to the mechanical angle. Will be corrected.

【００４３】図３（Ａ）において、偏向器４１〜４３に
印加する電圧を０にし、光軸ＡＸを通って偏向器４０に
入射する荷電粒子ビームを偏向器４０で偏向させると、
荷電粒子ビーム軌跡の直線近似は、１３Ｄのようにな
る。すなわち、偏向器４０の光軸方向中央点がクロスオ
ーバ像ＣＯ１の位置に一致しているので、偏向器４０で
偏向された荷電粒子ビームは、電磁レンズ２２Ａを通過
すると光軸ＡＸに平行になり、次いで電磁レンズ２２Ｂ
を通過するとクロスオーバ像ＣＯ２の位置に収束され、
次いでクロスオーバ像ＣＯ３の位置に収束される。In FIG. 3A, when the voltage applied to the deflectors 41 to 43 is set to 0 and the charged particle beam incident on the deflector 40 through the optical axis AX is deflected by the deflector 40,
A linear approximation of the charged particle beam trajectory is as in 13D. That is, since the center point of the deflector 40 in the optical axis direction coincides with the position of the crossover image CO1, the charged particle beam deflected by the deflector 40 becomes parallel to the optical axis AX when passing through the electromagnetic lens 22A. , Then electromagnetic lens 22B
When it passes through, it is converged to the position of the crossover image CO2,
Then, it is converged to the position of the crossover image CO3.

【００４４】図３（Ｂ）において、偏向器４０、４３及
び４４に印加する電圧を０にし、荷電粒子ビームをアパ
ーチャ板３１の下方から光軸ＡＸを通って上方へ入射さ
せ、偏向器４２及び偏向器４１で偏向させたと仮定した
とき、その軌跡の直線近似が１３Ｅのようになるように
する。すなわち、偏向器４１の偏向量を、点Ｐ４と点Ｐ
３とを結ぶ直線を進行方向反対側へ延長した二点鎖線が
クロスオーバ像ＣＯ２の位置を通るようにする。偏向器
４１及び４２に、ある同一電圧を印加したときにこの関
係が成立するようにすると、この関係は、線形近似が成
立する範囲内で任意の印加電圧に対し成立する。電磁レ
ンズ２２Ｂを通過した荷電粒子ビームは光軸ＡＸに平行
になり、電磁レンズ２２Ａを通過するとクロスオーバ像
ＣＯ１の位置に収束される。In FIG. 3B, the voltage applied to the deflectors 40, 43 and 44 is set to 0, and the charged particle beam is made to enter upward from below the aperture plate 31 through the optical axis AX to make the deflector 42 and Assuming that the deflector 41 deflects the light, the linear approximation of the locus is set to 13E. That is, the deflection amount of the deflector 41 is set to the points P4 and P
The chain double-dashed line that extends the straight line connecting 3 and 3 to the opposite side in the traveling direction passes through the position of the crossover image CO2. If this relationship is established when a certain same voltage is applied to the deflectors 41 and 42, this relationship is established for any applied voltage within the range where the linear approximation is established. The charged particle beam that has passed through the electromagnetic lens 22B becomes parallel to the optical axis AX, and when passing through the electromagnetic lens 22A, it is converged at the position of the crossover image CO1.

【００４５】図３（Ａ）で偏向器４０に電圧ＶＭ１を印
加し、図３（Ｂ）で偏向器４１及び４２に電圧ＶＭ２を
印加した場合に、図３（Ａ）の点Ｐ３と図３（Ｂ）の点
Ｐ３とが同一であるとする。この関係は、このときの電
圧比ＶＭ１：ＶＭ２を一定に保てば、電圧ＶＭ１及びＶ
Ｍ２を変化させても成立する。偏向器４０に電圧ＶＭ１
を印加し、偏向器４１及び４２に電圧ＶＭ２を印加する
と、光軸ＡＸ上を通って偏向器４０に入射した荷電粒子
ビームの軌跡の直線近似は、図３（Ａ）中の点Ｐ１、Ｃ
Ｏ１、Ｐ２及びＰ３と、図３（Ｂ）中の点Ｐ４、Ｐ５及
びＰ６を通る。When the voltage VM1 is applied to the deflector 40 in FIG. 3A and the voltage VM2 is applied to the deflectors 41 and 42 in FIG. 3B, the point P3 in FIG. It is assumed that the point P3 in (B) is the same. This relationship shows that if the voltage ratios VM1: VM2 at this time are kept constant, the voltages VM1 and V1
It holds even if M2 is changed. The voltage VM1 is applied to the deflector 40.
And a voltage VM2 is applied to the deflectors 41 and 42, the linear approximation of the trajectory of the charged particle beam incident on the deflector 40 through the optical axis AX is represented by points P1 and C in FIG.
It passes through O1, P2 and P3 and points P4, P5 and P6 in FIG.

【００４６】偏向器４１及び４２は、これらに同一電圧
を印加した場合に荷電粒子ビームを上記のように偏向す
るように設計されている。この場合の設計誤差は、偏向
器４１と偏向器４２との間隔を調整することにより補正
することができる。図１において、クロスオーバ像ＣＯ
１及びＣＯ２の位置の誤差が０のときに電圧ＶＭ１及び
ＶＭ２を変化させても、アパーチャ板３１上及び半導体
ウェーハ１１上での荷電粒子ビーム位置は変化しない
（偏向能率は０）。これに対し、電圧ＶＳ１及びＶＳ２
を変化させると、アパーチャ板３１上及び半導体ウェー
ハ１１上での荷電粒子ビーム位置は変化する。偏向器４
０〜４４については、次のような性質が在る。The deflectors 41 and 42 are designed to deflect the charged particle beam as described above when the same voltage is applied to them. The design error in this case can be corrected by adjusting the distance between the deflector 41 and the deflector 42. In FIG. 1, the crossover image CO
Even if the voltages VM1 and VM2 are changed when the error between the positions of 1 and CO2 is 0, the positions of the charged particle beam on the aperture plate 31 and the semiconductor wafer 11 do not change (deflection efficiency is 0). In contrast, the voltages VS1 and VS2
Is changed, the positions of the charged particle beam on the aperture plate 31 and the semiconductor wafer 11 are changed. Deflector 4
Regarding 0 to 44, there are the following properties.

【００４７】（１）クロスオーバ像ＣＯ１及びＣＯ２の
位置に誤差が存在しても、アパーチャ板３１上及び半導
体ウェーハ１１上での偏向能率は、偏向器４０、４１及
び４２よりも補正偏向器４３及び４４の方が大きく、ま
た、補正偏向器４３及び４４は小さな誤差の補正用であ
るので、補正偏向器４３及び４４の光軸方向長さを偏向
器４０、４１及び４２のそれより相当短くすることがで
きる。(1) Even if there is an error in the positions of the crossover images CO1 and CO2, the deflection efficiency on the aperture plate 31 and the semiconductor wafer 11 is higher than that of the deflectors 40, 41 and 42 by the correction deflector 43. And 44 are larger and the correction deflectors 43 and 44 are for correcting a small error, the lengths of the correction deflectors 43 and 44 in the optical axis direction are considerably shorter than those of the deflectors 40, 41 and 42. can do.

【００４８】（２）補正偏向器４３の光軸方向長さが偏
向器４０のそれより相当短く、かつ、クロスオーバ像Ｃ
Ｏ１が補正偏向器４３から離れているので、ステンシル
マスク１２上での偏向能率は、補正偏向器４３よりも偏
向器４０の方が相当大きく、ステンシルマスク１２上の
パターン選択位置に対する補正偏向器４３の影響が小さ
いので好ましい。(2) The length of the correction deflector 43 in the optical axis direction is considerably shorter than that of the deflector 40, and the crossover image C
Since O1 is distant from the correction deflector 43, the deflection efficiency of the deflector 40 on the stencil mask 12 is considerably larger than that of the correction deflector 43, and the correction deflector 43 for the pattern selection position on the stencil mask 12 is large. Is preferable because the influence of is small.

【００４９】クロスオーバ像ＣＯ１及びＣＯ２の位置の
誤差は、電磁レンズ２１Ｂ、補正偏向器４３及び４４を
用いて補正することができ、次にこれを説明する。図４
（Ａ）〜（Ｃ）において、１３Ｆ〜１３Ｈは、偏向器４
０〜４４への印加電圧が０のときの、電磁レンズ２１〜
２３を通った荷電粒子ビームの軌跡縦断面を、光軸ＡＸ
に直角な方向に拡大して示したものである。The position error of the crossover images CO1 and CO2 can be corrected by using the electromagnetic lens 21B and the correction deflectors 43 and 44, which will be described below. FIG.
13A to 13C, 13F to 13H are the deflector 4
The electromagnetic lenses 21 to 21 when the applied voltage to 0 to 44 is 0
The vertical section of the trajectory of the charged particle beam passing through
It is shown enlarged in the direction perpendicular to.

【００５０】アパーチャ板３１の孔を通過する電流Ｉ
を、この孔の下方にファラデーカップ５５を配置して測
定する。図４（Ａ）又は（Ｃ）に示すように、クロスオ
ーバ像ＣＯ１の位置が偏向器４０の光軸方向中央位置か
らずれている場合、偏向器４１〜４４への印加電圧を０
にし、偏向器４０で荷電粒子ビームを偏向させると、偏
向量に応じて電流Ｉが変化する。電磁レンズ２１（正確
には図１の電磁レンズ２１Ｂ、以下同様）に供給する電
流を変化させて、そのレンズ強度を変化させ、クロスオ
ーバ像ＣＯ１の位置を光軸ＡＸ上で変化させる。図４
（Ｂ）のようにクロスオーバ像ＣＯ１の位置が偏向器４
０の光軸方向中央位置に一致すると、偏向器４０の偏向
量を変化させても電流Ｉは変化しない。A current I passing through the hole of the aperture plate 31
Is measured by placing a Faraday cup 55 below the hole. As shown in FIG. 4A or 4C, when the position of the crossover image CO1 is displaced from the center position of the deflector 40 in the optical axis direction, the applied voltage to the deflectors 41 to 44 is set to 0.
When the charged particle beam is deflected by the deflector 40, the current I changes according to the deflection amount. The electric current supplied to the electromagnetic lens 21 (to be exact, the electromagnetic lens 21B in FIG. 1, hereinafter the same) is changed to change the lens strength and the position of the crossover image CO1 is changed on the optical axis AX. FIG.
As shown in (B), the position of the crossover image CO1 is set to the deflector 4
When it coincides with the center position of 0 in the optical axis direction, the current I does not change even if the deflection amount of the deflector 40 is changed.

【００５１】そこで、偏向器４１〜４４への印加電圧を
０にし、電磁レンズ２１の強度を変化させ、その各レン
ズ強度について、偏向器４０の偏向量の変化に対する電
流Ｉの変化を測定し、電流Ｉが極小となる電磁レンズ２
１の強度Ａ１を求める。次に、偏向器４０、４３及び４
４への印加電圧を０にし、電磁レンズ２１の強度を変化
させ、その各レンズ強度について、同一電圧が印加され
る偏向器４１及び４２での偏向量の変化に対する電流Ｉ
の変化を測定し、電流Ｉが極小となる電磁レンズ２１の
強度Ａ２を求める。Therefore, the applied voltage to the deflectors 41 to 44 is set to 0, the strength of the electromagnetic lens 21 is changed, and the change in the current I with respect to the change in the deflection amount of the deflector 40 is measured for each lens strength. Electromagnetic lens 2 that minimizes current I
The strength A1 of 1 is obtained. Next, the deflectors 40, 43 and 4
4 is set to 0, the strength of the electromagnetic lens 21 is changed, and for each lens strength, the current I with respect to the change in the deflection amount in the deflectors 41 and 42 to which the same voltage is applied.
Is measured, and the intensity A2 of the electromagnetic lens 21 at which the current I is minimized is obtained.

【００５２】電磁レンズ２１の強度がＡ１のときにはク
ロスオーバ像ＣＯ１の位置誤差は０であるがクロスオー
バ像ＣＯ２の位置に誤差があり、電磁レンズ２１の強度
がＡ２のときにはクロスオーバ像ＣＯ２の位置誤差は０
であるがクロスオーバ像ＣＯ１の位置に誤差があるの
で、電磁レンズ２１の好ましいレンズ強度ＬはＡ１でも
Ａ２でもない。好ましいレンズ強度Ｌが求まったと仮定
し、電磁レンズ２１のレンズ強度をＬにする。When the intensity of the electromagnetic lens 21 is A1, the position error of the crossover image CO1 is 0, but there is an error in the position of the crossover image CO2, and when the intensity of the electromagnetic lens 21 is A2, the position of the crossover image CO2. Error is 0
However, since there is an error in the position of the crossover image CO1, the preferable lens strength L of the electromagnetic lens 21 is neither A1 nor A2. Assuming that the preferable lens strength L is obtained, the lens strength of the electromagnetic lens 21 is set to L.

【００５３】偏向器４１、４２及び４４への印加電圧を
０にし、偏向器４０に印加する電圧ＶＭ１に比例した電
圧ＶＳ１を補正偏向器４３に印加し、その比例定数Ｋ１
を変化させ、各比例定数Ｋ１について、偏向器４０の偏
向量の変化に対する電流Ｉの変化を測定し、電流Ｉが極
小となる比例定数数Ｋ１を求める。次に、偏向器４０及
び補正偏向器４３への印加電圧を０にし、偏向器４１及
び４２に印加する電圧ＶＭ２に比例した電圧ＶＳ２を補
正偏向器４４に印加し、その比例定数Ｋ２を変化させ、
各比例定数Ｋ２について、偏向器４１及び４２の偏向量
の変化に対する電流Ｉの変化を測定し、電流Ｉが極小と
なる比例定数Ｋ２を求める。このようなＫ１とＫ２とか
ら、印加電圧比ＶＳ１：ＶＳ２＝Ｍ：Ｎを求める。比
Ｍ：Ｎは、ステンシルマスク１２上の選択位置によらず
一定である。The voltage applied to the deflectors 41, 42 and 44 is set to 0, a voltage VS1 proportional to the voltage VM1 applied to the deflector 40 is applied to the correction deflector 43, and its proportional constant K1.
For each proportional constant K1, the change in the current I with respect to the change in the deflection amount of the deflector 40 is measured, and the proportional constant number K1 at which the current I becomes the minimum is obtained. Next, the voltage applied to the deflector 40 and the correction deflector 43 is set to 0, a voltage VS2 proportional to the voltage VM2 applied to the deflectors 41 and 42 is applied to the correction deflector 44, and the proportional constant K2 is changed. ,
For each proportionality constant K2, the change in the current I with respect to the change in the deflection amount of the deflectors 41 and 42 is measured, and the proportionality constant K2 at which the current I becomes minimum is obtained. From such K1 and K2, the applied voltage ratio VS1: VS2 = M: N is obtained. The ratio M: N is constant regardless of the selected position on the stencil mask 12.

【００５４】次に、比Ｍ：Ｎと、電磁レンズ２１の好ま
しいレンズ強度Ｌとの関係について考える。もし、Ｍ／
（Ｍ＋Ｎ）＞Ｎ／（Ｍ＋Ｎ）であれば、レンズ強度Ｌ
は、Ａ２よりもＡ１に近い値であると考えられる。逆
に、Ｍ／（Ｍ＋Ｎ）＜Ｎ／（Ｍ＋Ｎ）であれば、レンズ
強度Ｌは、Ａ１よりもＡ２に近い値であると考えられ
る。そこで、偏向器４１〜４４への印加電圧を０にし、
電磁レンズ２１の強度を変化させ、その各レンズ強度に
ついて、偏向器４０の偏向量の変化に対する電流Ｉの変
化を測定し、電流Ｉが極小となる電磁レンズ２１の強度
Ａ１を求める。Next, the relationship between the ratio M: N and the preferable lens strength L of the electromagnetic lens 21 will be considered. If M /
If (M + N)> N / (M + N), lens strength L
Is considered to be a value closer to A1 than A2. On the contrary, if M / (M + N) <N / (M + N), the lens strength L is considered to be a value closer to A2 than A1. Therefore, the applied voltage to the deflectors 41 to 44 is set to 0,
The strength of the electromagnetic lens 21 is changed, and the change in the current I with respect to the change in the deflection amount of the deflector 40 is measured for each lens strength, and the strength A1 of the electromagnetic lens 21 at which the current I is minimized is obtained.

【００５５】次に、偏向器４０、４３及び４４への印加
電圧を０にし、電磁レンズ２１の強度を変化させ、その
各レンズ強度について、同一電圧が印加される偏向器４
１及び４２での偏向量の変化に対する電流Ｉの変化を測
定し、電流Ｉが極小となる電磁レンズ２１の強度Ａ２を
求める。 Ｌ＝（Ｍ・Ａ１＋Ｎ・Ａ２）／（Ｍ＋Ｎ） ・・・（１） と決定する。比Ｍ：Ｎは、初期値を例えば１：１とし、
このときのレンズ強度Ｌを上式（１）で求め、このレン
ズ強度Ｌの下で、上記のようにしてＭ：Ｎを求め、この
ような処理を１回又は複数回行うことにより、Ｍ：Ｎを
最適値に近づける。Next, the applied voltage to the deflectors 40, 43 and 44 is set to 0, the strength of the electromagnetic lens 21 is changed, and the same voltage is applied to each of the lens strengths of the deflector 4.
The change in the current I with respect to the change in the deflection amount at 1 and 42 is measured, and the strength A2 of the electromagnetic lens 21 at which the current I becomes the minimum is obtained. L = (M · A1 + N · A2) / (M + N) (1) is determined. The ratio M: N has an initial value of, for example, 1: 1
The lens strength L at this time is obtained by the above equation (1), and under this lens strength L, M: N is obtained as described above, and M: N is obtained by performing such processing once or a plurality of times. Make N close to the optimum value.

【００５６】Ｍ：Ｎは次のようにして求めることもでき
る。電流Ｉ、及び、ファラデーカップ５５を除いたとき
の半導体ウェーハ１１上の荷電粒子ビーム照射点Ｐは、
電圧ＶＳ１及びＶＳ２により異なる。そこで、Ｍ：Ｎの
初期値を例えば１：１とし、このときのレンズ強度Ｌを
上式（１）で求め、このレンズ強度Ｌの下で、電圧ＶＳ
１及びＶＳ２と、電流Ｉ及び照射点Ｐとの関係の実験式
を求め、電流Ｉが最大となり且つ照射点Ｐが光軸ＡＸ上
になるＭ：Ｎを求める。このような処理を１回又は複数
回行うことにより、Ｍ：Ｎを最適値に近づける。M: N can also be obtained as follows. The current I and the charged particle beam irradiation point P on the semiconductor wafer 11 when the Faraday cup 55 is removed are
It depends on the voltages VS1 and VS2. Therefore, the initial value of M: N is set to, for example, 1: 1 and the lens strength L at this time is obtained by the above equation (1).
An empirical formula of the relationship between 1 and VS2 and the current I and the irradiation point P is obtained, and M: N where the current I is maximum and the irradiation point P is on the optical axis AX is obtained. By performing such processing once or a plurality of times, M: N is brought close to the optimum value.

【００５７】上記の比例定数Ｋ１、Ｋ２及びレンズ強度
Ｌの決定は、荷電粒子ビーム露光装置のキャリブレーシ
ョンの際に行われる。本第１実施形態では、補正偏向器
４３及び４４のみではなく、これらを電磁レンズ２１Ｂ
の強度と関係付けて補正を行っているので、補正がより
正確に行われる。The above-mentioned proportional constants K1 and K2 and the lens strength L are determined at the time of calibration of the charged particle beam exposure apparatus. In the first embodiment, not only the correction deflectors 43 and 44, but also these are deflected by the electromagnetic lens 21B.
Since the correction is performed in association with the intensity of, the correction can be performed more accurately.

【００５８】電圧ＶＭ１及びＶＭ２をステップ変化させ
たときの整定待ち時間と、この補正との関係は、次の通
りである。ステンシルマスク１２上の透過孔パターンを
選択するとき、電圧ＶＭ１及びＶＭ２は例えば図１０
（Ａ）に示すようにステップ変化する。半導体ウェーハ
１１上の荷電粒子ビーム照射位置に要求される精度は例
えば０．０１μｍと極小であり、この精度が確保される
まで、荷電粒子ビームをブランキングする必要がある。
荷電粒子ビームは連続出射しているので、このブランキ
ングは、アパーチャ板３１の上方に配置された不図示の
偏向器とアパーチャ板３１とで行われる。電圧ＶＭ１及
びＶＭ２のステップ変化が同一であっても、必要な整定
待ち時間（ブランキング時間）は、電圧ＶＭ１及びＶＭ
２の変化に対する半導体ウェーハ１１上の荷電粒子ビー
ム位置の変化（偏向能率）が大きいほど長くなる。The relationship between the settling waiting time when the voltages VM1 and VM2 are stepwise changed and this correction is as follows. When selecting the transmission hole pattern on the stencil mask 12, the voltages VM1 and VM2 are set as shown in FIG.
The step changes as shown in FIG. The accuracy required for the charged particle beam irradiation position on the semiconductor wafer 11 is as small as 0.01 μm, and it is necessary to blank the charged particle beam until this accuracy is ensured.
Since the charged particle beam is continuously emitted, this blanking is performed by the aperture plate 31 and the deflector (not shown) arranged above the aperture plate 31. Even if the step changes of the voltages VM1 and VM2 are the same, the necessary settling waiting time (blanking time) is equal to the voltages VM1 and VM2.
The larger the change (deflection efficiency) of the charged particle beam position on the semiconductor wafer 11 with respect to the change of 2, the longer the length.

【００５９】上記補正をしないと、この偏向能率が大き
くなるので、整定待ち時間は例えば図１０（Ａ）中のｔ
２のように長くなるが、この補正により偏向能率が減少
して例えばｔ１＝５００ｎｓと短くなる。これにより、
露光のスループットが向上する。本第１実施形態では、
上記のように補正がより正確に行われるので、整定待ち
時間の短縮効果が大きい。If the above correction is not made, this deflection efficiency becomes large, so the settling waiting time is, for example, t in FIG.
However, this correction reduces the deflection efficiency and shortens it to t1 = 500 ns, for example. This allows
The exposure throughput is improved. In the first embodiment,
Since the correction is performed more accurately as described above, the effect of reducing the settling waiting time is great.

【００６０】［第２実施形態］図５は、本発明の第２実
施形態の荷電粒子ビーム露光装置の要部概略構成を示
す。この装置では、偏向器４０と電磁レンズ２１Ｂとの
間に補正偏向器４３が配置され、偏向器４１と電磁レン
ズ２２Ｂとの間に補正偏向器４４が配置されている。そ
の他の点は図１と同一である。[Second Embodiment] FIG. 5 shows a schematic structure of a main part of a charged particle beam exposure apparatus according to the second embodiment of the present invention. In this device, a correction deflector 43 is arranged between the deflector 40 and the electromagnetic lens 21B, and a correction deflector 44 is arranged between the deflector 41 and the electromagnetic lens 22B. The other points are the same as those in FIG.

【００６１】この第２実施形態においても、上記第１実
施形態で述べた性質（１）及び（２）が確保される。 ［第３実施形態］図６は、本発明の第３実施形態の荷電
粒子ビーム露光装置の要部概略構成を示す。Also in the second embodiment, the properties (1) and (2) described in the first embodiment are secured. [Third Embodiment] FIG. 6 shows a schematic structure of a main part of a charged particle beam exposure apparatus according to the third embodiment of the present invention.

【００６２】この装置では、図１の偏向器４０及び４３
の替わりに、偏向器４１、４２及び４４と同様なものを
光軸方向逆側に配置した構成となっている。すなわち、
電磁レンズ２１Ｂと電磁レンズ２２Ａとの間に偏向器１
４２、１４４及び１４１がそれぞれ偏向器４２、４４及
び４１と対応して配置されている。偏向器１４１及び１
４２には、増幅器１５１の出力電圧ＶＭ１が共通に印加
され、補正偏向器１４４には増幅器１５４の出力電圧Ｖ
Ｓ１が印加されている。クロスオーバ像ＣＯ１は、偏向
器１４２の光軸***点と電磁レンズ２１Ｂとの間に存
在している。他は図１の構成と同一である。In this device, the deflectors 40 and 43 of FIG.
Instead of the above, the deflectors 41, 42 and 44 are arranged on the opposite side in the optical axis direction. That is,
The deflector 1 is provided between the electromagnetic lens 21B and the electromagnetic lens 22A.
42, 144 and 141 are arranged corresponding to the deflectors 42, 44 and 41, respectively. Deflectors 141 and 1
The output voltage VM1 of the amplifier 151 is commonly applied to 42, and the output voltage V1 of the amplifier 154 is applied to the correction deflector 144.
S1 is applied. The crossover image CO1 exists between the center point on the optical axis of the deflector 142 and the electromagnetic lens 21B. Others are the same as the configuration of FIG.

【００６３】図７（Ａ）及び（Ｂ）はそれぞれ図３
（Ａ）及び（Ｂ）に対応している。図７（Ａ）おいて、
偏向器１４４、４１、４２及び４４に印加する電圧を０
にし、光軸を通って偏向器１４２に入射する荷電粒子ビ
ームを偏向器１４２で偏向させ、さらに偏向器１４１で
偏向させたとき、荷電粒子ビーム軌跡の直線近似が１３
Ｉのようになるようにする。FIGS. 7A and 7B are respectively shown in FIG.
It corresponds to (A) and (B). In FIG. 7 (A),
The voltage applied to the deflectors 144, 41, 42 and 44 is 0
When the charged particle beam incident on the deflector 142 through the optical axis is deflected by the deflector 142 and further deflected by the deflector 141, the linear approximation of the trajectory of the charged particle beam is 13
Try to be like I.

【００６４】図７（Ｂ）において、偏向器１４１、１４
２、１４４及び４４に印加する電圧を０にし、荷電粒子
ビームをアパーチャ板３１の下方から光軸ＡＸを通って
上方へ入射させ、偏向器４２及び４１で偏向させたと
き、その軌跡の直線近似が１３Ｊのようになるようにす
る。図７（Ａ）で偏向器１４１及び１４２に電圧ＶＭ１
を印加し、図７（Ｂ）で偏向器４１及び４２に電圧ＶＭ
２を印加した場合に、図７（Ａ）の点Ｐ３と図７（Ｂ）
の点Ｐ３とが同一であるとする。この条件は、このとき
の電圧比ＶＭ１：ＶＭ２を一定に保てば、電圧ＶＭ１及
びＶＭ２を変化させても成立する。In FIG. 7B, the deflectors 141 and 14
When the voltage applied to Nos. 2, 144 and 44 is set to 0, the charged particle beam is incident upward from below the aperture plate 31 through the optical axis AX, and is deflected by the deflectors 42 and 41, a linear approximation of its locus is obtained. So that it looks like 13J. In FIG. 7A, the voltage VM1 is applied to the deflectors 141 and 142.
Is applied, the voltage VM is applied to the deflectors 41 and 42 in FIG.
2 is applied, point P3 in FIG. 7 (A) and FIG. 7 (B)
It is assumed that the point P3 is the same as the point P3. This condition holds even if the voltages VM1 and VM2 are changed if the voltage ratios VM1: VM2 at this time are kept constant.

【００６５】偏向器１４１及び１４２に電圧ＶＭ１を印
加し、偏向器４１及び４２に電圧ＶＭ２を印加すると、
光軸ＡＸ上を通って偏向器１４２に入射した荷電粒子ビ
ームの軌跡の直線近似は、図７（Ａ）中の点Ｐ１、Ｐ５
Ａ、Ｐ４Ａ、Ｐ２及びＰ３と、図７（Ｂ）中の点Ｐ４、
Ｐ５及びＰ６を通る。他は上記第１実施形態の場合と同
一である。When the voltage VM1 is applied to the deflectors 141 and 142 and the voltage VM2 is applied to the deflectors 41 and 42,
The linear approximation of the trajectory of the charged particle beam that has entered the deflector 142 through the optical axis AX is as shown by points P1 and P5 in FIG. 7A.
A, P4A, P2 and P3, and the point P4 in FIG.
Go through P5 and P6. Others are the same as in the case of the first embodiment.

【００６６】［第４実施形態］図８は、本発明の第４実
施形態の荷電粒子ビーム露光装置の要部概略構成を示
す。偏向器４０に印加される電圧は、偏向器４１及び４
２に印加される電圧に比例しているので、この装置で
は、この比例定数が１になるように偏向器４０の寸法を
定め、増幅器５１の出力電圧ＶＭ２を偏向器４０にも共
通に印加している。偏向器４０、４１及び４２のうち１
つは光軸ＡＸの回りの回転角を電気的に調整可能となっ
ており、残りの２つは図２の場合と同様に機械的に調整
可能となっている。他は図１の構成と同一である。[Fourth Embodiment] FIG. 8 shows a schematic structure of a main part of a charged particle beam exposure apparatus according to the fourth embodiment of the present invention. The voltage applied to the deflector 40 is equal to that of the deflectors 41 and 4
In this device, the size of the deflector 40 is determined so that the proportional constant is 1, and the output voltage VM2 of the amplifier 51 is applied to the deflector 40 in common. ing. 1 of the deflectors 40, 41 and 42
One can electrically adjust the rotation angle around the optical axis AX, and the other two can be mechanically adjusted as in the case of FIG. Others are the same as the configuration of FIG.

【００６７】この第４実施形態では、増幅器５１の出力
電圧ＶＭ２を偏向器４１、４２及び４０に共通に印加し
ているので、増幅器５１の出力電圧ＶＭ２がステップ変
化したときに偏向器４１、４２及び４０により形成され
る電界の過渡特性が互いに同一となり、整定待ち時間の
決定が容易になる。すなわち、偏向器４０と、偏向器４
１及び４２とで別々の増幅器を用いると、各増幅器の過
渡特性が異なるので、整定待ち時間を最も長い整定待ち
時間に合わせる必要があり、整定待ち時間の決定が煩雑
であるが、本第４実施形態ではその必要がなくなり、整
定待ち時間の決定が容易になる。In the fourth embodiment, since the output voltage VM2 of the amplifier 51 is commonly applied to the deflectors 41, 42 and 40, when the output voltage VM2 of the amplifier 51 changes stepwise, the deflectors 41 and 42 are changed. And 40 have the same transient characteristics of the electric field, facilitating the determination of the settling time. That is, the deflector 40 and the deflector 4
If different amplifiers are used for 1 and 42, the transient characteristics of each amplifier are different, so it is necessary to match the settling wait time with the longest settling wait time, and it is complicated to determine the settling wait time. The embodiment eliminates the need, and facilitates the determination of the settling wait time.

【００６８】［第５実施形態］図９は、本発明の第５実
施形態の荷電粒子ビーム露光装置のアパーチャ通過電流
調整部の構成を示す。上記第１実施形態で述べたよう
に、荷電粒子ビームの軌跡は偏向量が比較的小さいので
偏向器４０〜４３への印加電圧に関し線形近似が成立す
る。印加電圧の２次の項は、収差の原因となるが、荷電
粒子ビームの中心線の軌跡には影響しない。印加電圧の
３次の項は、荷電粒子ビームの中心線の軌跡に影響し、
印加電圧がステップ変化する際、アパーチャ板３１上で
の荷電粒子ビーム位置が変動する原因となる。このた
め、アパーチャ板３１を通過する電流は、印加電圧の３
乗に略比例して変化する。この際、半導体ウェーハ１１
上の荷電粒子ビーム照射点の変動は無視できるが、露光
量に影響するので、印加電圧の３次の項に対する整定待
ち時間を考慮する必要がある。[Fifth Embodiment] FIG. 9 shows the arrangement of an aperture passing current adjusting unit of a charged particle beam exposure apparatus according to the fifth embodiment of the present invention. As described in the first embodiment, since the trajectory of the charged particle beam has a relatively small deflection amount, a linear approximation is established regarding the voltage applied to the deflectors 40 to 43. The second-order term of the applied voltage causes aberration but does not affect the locus of the center line of the charged particle beam. The third-order term of the applied voltage affects the locus of the center line of the charged particle beam,
When the applied voltage changes stepwise, it causes the position of the charged particle beam on the aperture plate 31 to change. Therefore, the current passing through the aperture plate 31 is equal to the applied voltage of 3
It changes in almost proportion to the power. At this time, the semiconductor wafer 11
Although the fluctuation of the above charged particle beam irradiation point can be ignored, it affects the exposure amount, so it is necessary to consider the settling waiting time for the third-order term of the applied voltage.

【００６９】例えば、 半導体ウェーハ１１上の荷電粒子ビーム照射点に要求さ
れる精度：０．０１μｍ ステンシルマスク１２上の荷電粒子ビームの偏向量（光
軸ＡＸからの距離）の最大値：５ｍｍ ステンシルマスク１２上の透過孔パターンの半導体ウェ
ーハ１１上への投影の縮小率：１／１００ とすると、ステンシルマスク１２上の５ｍｍのステップ
変化が半導体ウェーハ１１上の５０μｍのステップ変化
に対応し、半導体ウェーハ１１上の変化を０．０１μｍ
以下にするには、図１０（Ａ）において、電圧ＶＭ１の
安定値Ｖ０に対する差ΔＶを、 ΔＶ／Ｖ０≦０．０１／５０＝１／５０００ ・・・（２） にする必要がある。ΔＶ／Ｖ０＝１／５０００となる時
間ｔ１が整定待ち時間であり、実際には５．００×１０
-7ｓｅｃ＝５００ｎｓｅｃ程度である。For example, the accuracy required for the charged particle beam irradiation point on the semiconductor wafer 11 is 0.01 μm. The maximum value of the deflection amount (distance from the optical axis AX) of the charged particle beam on the stencil mask 12 is 5 mm. When the reduction ratio of the projection of the through hole pattern on the semiconductor wafer 11 on the semiconductor wafer 11 is set to 1/100, the step change of 5 mm on the stencil mask 12 corresponds to the step change of 50 μm on the semiconductor wafer 11, 0.01 μm change above
To achieve the following, in FIG. 10A, it is necessary to set the difference ΔV of the voltage VM1 to the stable value V0 to ΔV / V0 ≦ 0.01 / 50 = 1/5000 (2). The time t1 when ΔV / V0 = 1/5000 is the settling waiting time, which is actually 5.00 × 10
-7 sec = about 500 nsec.

【００７０】 ＶＭ１（ｔ）＝Ｖ０｛１−ｅｘｐ（−ｔ／ａ）｝ と近似し、ｔ＝５．００×１０-7ｓｅｃでΔＶ／Ｖ０＝
１／５０００となるとすると、ａ＝６．０３×１０-8ｓ
ｅｃとなる。アパーチャ板３１の孔を通過する電流Ｉ
（ｔ）は、｛ＶＭ１（ｔ）｝3 に略比例しているので、 Ｉ（ｔ）＝Ｉ０｛１−ｅｘｐ（−ｔ／ａ）｝3 と近似する。露光量を正確にするために、半導体ウェー
ハ１１上への荷電粒子ビーム照射量変化が安定値の９９
％になるまで荷電粒子ビームをブランキングするには、
投影縮小率１／１００を考慮すると、図１０（Ｂ）にお
いて、電流Ｉ（ｔ）の安定値Ｉ０に対する差ΔＩ０を、 ΔＩ０／Ｉ０≦（１／１００）・（１／１００）＝１／１００００ ・・・（３） にする必要がある。ΔＩ０／Ｉ０＝１／１００００とな
る時間ｔ３が整定待ち時間であり、約６２０ｎｓとな
る。この場合、必要な整定待ち時間は、上式（２）では
なく上式（３）で定まる。It is approximated as VM1 (t) = V0 {1-exp (−t / a)}, and ΔV / V0 = at t = 5.00 × 10 −7 sec.
Assuming 1/5000, a = 6.03 × 10 −8 s
ec. Current I passing through the hole in the aperture plate 31
Since (t) is approximately proportional to {VM1 (t)} 3 , it is approximated as I (t) = I0 {1-exp (-t / a)} 3 . In order to make the exposure amount accurate, the change of the irradiation amount of the charged particle beam onto the semiconductor wafer 11 is a stable value of 99.
To blank the charged particle beam until
Considering the projection reduction ratio 1/100, in FIG. 10B, the difference ΔI0 of the current I (t) with respect to the stable value I0 is expressed as ΔI0 / I0 ≦ (1/100) · (1/100) = 1/10000 ... (3) is required. The time t3 when ΔI0 / I0 = 1/10000 is the settling waiting time, which is about 620 ns. In this case, the necessary settling waiting time is determined by the above equation (3) instead of the above equation (2).

【００７１】なお、図１０（Ｂ）中の整定待ち時間ｔ３
は、図１０（Ａ）中の整定待ち時間ｔ２に対応してお
り、上記第１実施形態で述べた補正をしなかった場合で
あって、アパーチャ板３１上での荷電粒子ビーム位置の
変動が大きくなって整定待ち時間ｔ３より長くなってい
る。アパーチャ板３１上及び半導体ウェーハ１１上での
偏向能率は、偏向器４０よりも補正偏向器４３の方が大
きく、また、補正偏向器４３は小さな誤差の補正用であ
るので、増幅器５３の出力電圧ＶＳ１は増幅器５０の出
力電圧ＶＭ１より相当小さい。このため、電圧ＶＳ１の
整定時間ｔ５は、図１０（Ｄ）に示す如く、電圧ＶＭ１
のそれに比し相当小さい。この性質により、補正偏向器
４３を用いて、アパーチャ板３１上での荷電粒子ビーム
位置の変動に対する補正が可能となる。The settling waiting time t3 in FIG.
10A corresponds to the settling wait time t2 in FIG. 10A, and is the case where the correction described in the first embodiment is not performed, and the fluctuation of the charged particle beam position on the aperture plate 31 is It becomes larger and is longer than the settling waiting time t3. The deflection efficiency on the aperture plate 31 and on the semiconductor wafer 11 is larger in the correction deflector 43 than in the deflector 40, and the correction deflector 43 is for correcting a small error. VS1 is considerably smaller than the output voltage VM1 of the amplifier 50. Therefore, the settling time t5 of the voltage VS1 is equal to the voltage VM1 as shown in FIG.
It is considerably smaller than that. Due to this property, the correction deflector 43 can be used to correct the fluctuation of the charged particle beam position on the aperture plate 31.

【００７２】図９の装置では、偏向器４０〜４４への印
加電圧がステップ変化する際、印加電圧の３次の項によ
りアパーチャ板３１上での荷電粒子ビーム位置が変動す
るのを、補正偏向器４３で補正しており、図１の構成
に、構成要素７０〜８４が付加されている。ステンシル
マスク１２上の透過孔パターンを選択するためのデータ
Ｄ１は、データ発生装置７０に格納されており、データ
発生装置７０から順に読み出されたパターン選択データ
Ｄ１がＤ／Ａ変換器７１でアナログ化され、増幅器５０
で電圧ＶＭ１に増幅されて偏向器４０に印加される。補
正偏向器４３には、Ｄ／Ａ変換器７２でアナログ化され
増幅器５３で増幅された電圧ＶＳ１が印加される。Ｄ／
Ａ変換器７２には、補正値Ｄ２＝Ｋ１・Ｄ１と補正値Ｄ
３とを加算器７３で加算したものが供給される。Ｋ１は
上述の比例定数である。In the apparatus shown in FIG. 9, when the voltage applied to the deflectors 40 to 44 changes stepwise, the position of the charged particle beam on the aperture plate 31 changes due to the third term of the applied voltage. The correction is performed by the device 43, and the components 70 to 84 are added to the configuration of FIG. The data D1 for selecting the transmission hole pattern on the stencil mask 12 is stored in the data generator 70, and the pattern selection data D1 sequentially read from the data generator 70 is analogized by the D / A converter 71. Amplifier 50
Is amplified to a voltage VM1 and applied to the deflector 40. The voltage VS1 which is analogized by the D / A converter 72 and amplified by the amplifier 53 is applied to the correction deflector 43. D /
In the A converter 72, the correction value D2 = K1 · D1 and the correction value D
The value obtained by adding 3 and 3 in the adder 73 is supplied. K1 is the proportional constant described above.

【００７３】補正偏向器４３に対する補正値の作成段階
では、Ｄ３＝０とされ、パターン選択データＤ１をステ
ップ変化させたときにアパーチャ板３１の孔を通過する
電流Ｉに略比例した値が、２次電子検出器７４で検出さ
れ、これが増幅器７５で増幅され、Ａ／Ｄ変換器７６で
デジタル値ＳＥに変換されて制御回路７７に供給され
る。このステップ変化の際、偏向器４１〜４３には偏向
器４０に比例した電圧が供給されるので、偏向器４１〜
４３への印加電圧もステップ変化する。At the stage of creating the correction value for the correction deflector 43, D3 = 0 is set, and when the pattern selection data D1 is stepwise changed, the value substantially proportional to the current I passing through the hole of the aperture plate 31 is 2 It is detected by the secondary electron detector 74, amplified by the amplifier 75, converted into a digital value SE by the A / D converter 76, and supplied to the control circuit 77. At the time of this step change, a voltage proportional to the deflector 40 is supplied to the deflectors 41 to 43.
The applied voltage to 43 also changes stepwise.

【００７４】パターン選択データＤ１のステップ変化開
始時点で、データ発生装置７０からカウンタ７８のロー
ド制御入力端Ｌに供給されるロード信号がアクティブに
なり、パターン選択データＤ１がカウンタ７８のデータ
入力端Ｄに供給されてカウンタ７８にロードされる。こ
の直後に、データ発生装置７０はスタート信号ＳＴを高
レベルにする。これによりアンドゲート７９が開かれ
て、クロック発生器８０からのクロックＣＬＫがアンド
ゲート７９を介しカウンタ７８のクロック入力端ＣＫに
供給される。カウンタ７８のデータ出力端Ｑから取り出
された計数値によりメモリ８１がアドレス指定され、制
御回路７７はこのアドレスに２次電子検出量ＳＥを書き
込む。この書き込みは、ステンシルマスク１２上の透過
孔パターンに対応した各データＤ１について行われる。At the start of step change of the pattern selection data D1, the load signal supplied from the data generator 70 to the load control input terminal L of the counter 78 becomes active, and the pattern selection data D1 becomes the data input terminal D of the counter 78. And is loaded into the counter 78. Immediately after this, the data generator 70 sets the start signal ST to the high level. As a result, the AND gate 79 is opened, and the clock CLK from the clock generator 80 is supplied to the clock input terminal CK of the counter 78 via the AND gate 79. The memory 81 is addressed by the count value fetched from the data output terminal Q of the counter 78, and the control circuit 77 writes the secondary electron detection amount SE to this address. This writing is performed for each data D1 corresponding to the transmission hole pattern on the stencil mask 12.

【００７５】メモリ８２には、ステンシルマスク１２上
の透過孔パターンに対応した各データＤ１について、２
次電子検出量ＳＥを最大にするための補正値Ｄ３が書き
込まれている。補正値Ｄ３は、例えば次のようにして決
定する。あるパターン選択データＤ１及び補正前のある
２次電子検出量ＳＥ（ステップ変化開始後のある時点
ｔ）について、補正値Ｄ３を変化させ、各補正値Ｄ３に
対する２次電子検出量ＳＥを測定してその実験式ＳＥ
（Ｄ３）を求め、２次電子検出量ＳＥを最大にするため
の補正値Ｄ３を決定する。これを、補正前の２次電子検
出量ＳＥの複数点の各々について行い、補間法により、
補正前の任意の２次電子検出量ＳＥに対する補正値Ｄ３
を求める。これを、ステンシルマスク１２上の透過孔パ
ターンに対応した各データＤ１について行う。The memory 82 stores 2 for each data D1 corresponding to the transmission hole pattern on the stencil mask 12.
A correction value D3 for maximizing the secondary electron detection amount SE is written. The correction value D3 is determined as follows, for example. For a certain pattern selection data D1 and a certain secondary electron detection amount SE before correction (at a certain time t after the start of step change), the correction value D3 is changed, and the secondary electron detection amount SE for each correction value D3 is measured. The empirical formula SE
(D3) is obtained, and the correction value D3 for maximizing the secondary electron detection amount SE is determined. This is performed for each of the plurality of points of the secondary electron detection amount SE before correction, and by the interpolation method,
Correction value D3 for arbitrary secondary electron detection amount SE before correction
Ask for. This is performed for each data D1 corresponding to the transmission hole pattern on the stencil mask 12.

【００７６】このようにして求めた補正値Ｄ３（Ｄ１，
ＳＥ）を制御回路７７に供給すると、制御回路７７は、
セレクタ８３を介してメモリ８２にアドレス（Ｄ１，Ｓ
Ｅ）を供給し、このアドレスに補正値Ｄ３を書き込む。
露光の際には、Ａ／Ｄ変換器７６の出力の代わりに、メ
モリ８１の出力が用いられる。これは、２次電子検出器
７４の出力が半導体ウェーハ１１上の凹凸に依存するの
で、半導体ウェーハ１１上の平坦部に対する、メモリ８
１に書き込まれている２次電子検出量ＳＥを用いるため
である。The correction value D3 (D1,
SE) is supplied to the control circuit 77, the control circuit 77
The address (D1, S
E) is supplied, and the correction value D3 is written in this address.
At the time of exposure, the output of the memory 81 is used instead of the output of the A / D converter 76. This is because the output of the secondary electron detector 74 depends on the unevenness on the semiconductor wafer 11, so that the memory 8 for the flat portion on the semiconductor wafer 11 is
This is because the secondary electron detection amount SE written in 1 is used.

【００７７】露光においては、メモリ８１及び８２が読
み出し状態にされ、セレクタ８３の入力がメモリ８１側
にされる。ステンシルマスク１２上の透過孔パターンを
選択するためにデータＤ１がステップ変化すると、カウ
ンタ７８のロード制御入力端Ｌがアクティブにされてパ
ターン選択データＤ１がカウンタ７８にロードされ、こ
の直後にスタート信号ＳＴが高レベルにされてクロック
発生器８０からのクロックＣＬＫがカウンタ７８で計数
され、その計数値でメモリ８１がアドレス指定されて、
メモリ８１からデータＳＥが読み出され、セレクタ８３
を介してメモリ８２のアドレス入力端に供給され、メモ
リ８２から補正値Ｄ３が読み出されて加算器７３に供給
される。In the exposure, the memories 81 and 82 are put in the read state, and the input of the selector 83 is set to the memory 81 side. When the data D1 is step-changed to select the transmission hole pattern on the stencil mask 12, the load control input terminal L of the counter 78 is activated and the pattern selection data D1 is loaded into the counter 78. Immediately thereafter, the start signal ST Is set to a high level, the clock CLK from the clock generator 80 is counted by the counter 78, and the memory 81 is addressed by the counted value,
The data SE is read from the memory 81, and the selector 83
The correction value D3 is read from the memory 82 and supplied to the adder 73.

【００７８】あるパターン選択データＤ１に対する補正
値Ｄ３を図１０（Ｃ）に示す。この補正値Ｄ３により、
アパーチャ通過電流Ｉは、図１０（Ｂ）中の一点鎖線で
示す如くなり、整定待ち時間が、ｔ３から、ｔ１より短
いｔ５に短縮される。これにより、ステンシルマスク１
２の透過孔パターン選択の際に必要な整定待ち時間はｔ
１となり、露光のスループットが向上する。The correction value D3 for certain pattern selection data D1 is shown in FIG. With this correction value D3,
The aperture passing current I becomes as shown by the alternate long and short dash line in FIG. 10B, and the settling waiting time is shortened from t3 to t5 which is shorter than t1. This allows the stencil mask 1
The settling waiting time required when selecting the 2 through hole pattern is t
Therefore, the exposure throughput is improved.

【００７９】カウンタ７８でメモリ８２を直接アドレス
指定することも可能であるが、本第５実施形態では、
２次電子検出量ＳＥが格納されたメモリ８１を用いてい
るので、２次電子検出量ＳＥと補正値Ｄ３との関係を把
握でき、補正値Ｄ３をより好ましい値に更新し易くな
る。Although it is possible to directly address the memory 82 with the counter 78, in the fifth embodiment,
Since the memory 81 in which the secondary electron detection amount SE is stored is used, the relationship between the secondary electron detection amount SE and the correction value D3 can be grasped, and the correction value D3 can be easily updated to a more preferable value.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の第１実施形態の荷電粒子ビーム露光装
置の概略構成図である。FIG. 1 is a schematic configuration diagram of a charged particle beam exposure apparatus according to a first embodiment of the present invention.

【図２】図１中のマスク出射側偏向器の概略構成を示す
斜視図である。FIG. 2 is a perspective view showing a schematic configuration of a mask emission side deflector in FIG.

【図３】図１の装置におけるステンシルマスク前後の荷
電粒子ビーム軌跡の説明図である。FIG. 3 is an explanatory diagram of a charged particle beam trajectory before and after a stencil mask in the apparatus of FIG.

【図４】図１の装置のクロスオーバ像位置の調整方法説
明図である。4 is an explanatory diagram of a method of adjusting a crossover image position of the apparatus of FIG.

【図５】本発明の第２実施形態の荷電粒子ビーム露光装
置の要部概略構成図である。FIG. 5 is a schematic configuration diagram of a main part of a charged particle beam exposure apparatus according to a second embodiment of the present invention.

【図６】本発明の第３実施形態の荷電粒子ビーム露光装
置の要部概略構成図である。FIG. 6 is a schematic configuration diagram of a main part of a charged particle beam exposure apparatus according to a third embodiment of the present invention.

【図７】図６の装置におけるステンシルマスク前後の荷
電粒子ビーム軌跡の説明図である。7 is an explanatory diagram of a charged particle beam trajectory before and after a stencil mask in the apparatus of FIG.

【図８】本発明の第４実施形態の荷電粒子ビーム露光装
置の要部概略構成図である。FIG. 8 is a schematic configuration diagram of a main part of a charged particle beam exposure apparatus according to a fourth embodiment of the present invention.

【図９】本発明の第５実施形態の荷電粒子ビーム露光装
置のアパーチャ通過電流調整部の構成図である。FIG. 9 is a configuration diagram of an aperture passing current adjusting unit of a charged particle beam exposure apparatus according to a fifth embodiment of the present invention.

【図１０】図９のアパーチャ通過電流調整部の動作を示
す波形図である。FIG. 10 is a waveform diagram showing an operation of the aperture passing current adjusting unit in FIG.

【図１１】従来の荷電粒子ビーム露光装置の要部概略構
成図である。FIG. 11 is a schematic configuration diagram of a main part of a conventional charged particle beam exposure apparatus.

【図１２】従来の他の荷電粒子ビーム露光装置の要部概
略構成図である。FIG. 12 is a schematic configuration diagram of a main part of another conventional charged particle beam exposure apparatus.

【図１３】偏向能率の大小により異なる整定待ち時間を
示す線図である。FIG. 13 is a diagram showing a settling waiting time that differs depending on the magnitude of the deflection efficiency.

【符号の説明】[Explanation of symbols]

１０ 荷電粒子銃 １１ 半導体ウェーハ １２ ステンシルマスク ＣＯ ガンクロスオーバ ＣＯ１〜ＣＯ３ クロスオーバ像 ２１〜２５ 電磁レンズ ３０、３１ アパーチャ板 ４０〜４２、１４１〜１４４ 偏向器 ４１１〜４１８、４２１〜４２８ 電極片 ４３、４４ 補正偏向器 ５０〜５４、７５、５１１〜５１８、１５１、１５４
増幅器 ５５ ファラデーカップ ７０ データ発生装置 ７４ ２次電子検出器 ７８ カウンタ ８０ クロック発生器 ８１、８２ メモリ10 charged particle gun 11 semiconductor wafer 12 stencil mask CO gun crossover CO1 to CO3 crossover image 21 to 25 electromagnetic lens 30, 31 aperture plate 40 to 42, 141 to 144 deflector 411 to 418, 421 to 428 electrode piece 43, 44 Correction deflector 50-54, 75, 511-518, 151, 154
Amplifier 55 Faraday cup 70 Data generator 74 Secondary electron detector 78 Counter 80 Clock generator 81, 82 Memory

───────────────────────────────────────────────────── フロントページの続き (72)発明者 阿部 智彦 神奈川県川崎市中原区上小田中1015番地 富士通株式会社内 (72)発明者 佐藤 高雅 神奈川県川崎市中原区上小田中1015番地 富士通株式会社内 (72)発明者 安田 洋 神奈川県川崎市中原区上小田中1015番地 富士通株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Tomohiko Abe 1015 Kamiodanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture, Fujitsu Limited (72) Inventor Takamasa Sato 1015, Kamedotachu, Nakahara-ku, Kawasaki City, Kanagawa Prefecture, Fujitsu Limited ( 72) Inventor Hiroshi Yasuda 1015 Kamiodanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture, Fujitsu Limited

Claims (21)

【特許請求の範囲】[Claims] 【請求項１】 第１電磁レンズ、第２電磁レンズ、第３
電磁レンズ及びアパーチャが互いに光軸を一致させてこ
の順に配置され、荷電粒子ビームの横断面を整形する透
過孔パターンが複数形成されたステンシルマスクが略第
２電磁レンズ位置に該光軸に垂直に配置され、荷電粒子
ビームが該第１電磁レンズ内、該第２電磁レンズ内、該
ステンシルマスク上の選択された透過孔パターン、該第
３電磁レンズ内及び該アパーチャをこの順に通って露光
対象物上に照射され、該第１電磁レンズと該第２電磁レ
ンズとの間にガンクロスオーバの第１クロスオーバ像が
存在し、該第２電磁レンズと該第３電磁レンズとの間か
つ該第３電磁レンズ側に該ガンクロスオーバの第２クロ
スオーバ像が存在し、 中心軸を該光軸に一致させて、該第１電磁レンズと該第
２電磁レンズとの間に配置されたマスク入射側静電偏向
器と、 中心軸を該光軸に一致させて、該第２電磁レンズと該第
３電磁レンズとの間の該第２電磁レンズ側に配置された
マスク出射側第１静電偏向器と、 中心軸を該光軸に一致させて、該第２電磁レンズと該第
３電磁レンズとの間の該第３電磁レンズ側に、光軸方向
中央点と該第３電磁レンズとの間に該第２クロスオーバ
像が存在するように配置されたマスク出射側第２静電偏
向器とを有する荷電粒子ビーム露光装置を用いた荷電粒
子ビーム露光方法であって、 増幅回路の出力電圧を該マスク出射側第１静電偏向器と
該マスク出射側第２静電偏向器とに共通に印加し、 該マスク入射側静電偏向器に対し、該荷電粒子ビーム
を、該マスク入射側静電偏向器から出射する該荷電粒子
ビームを進行方向反対側へ延長させた線が該第１クロス
オーバ像の位置を略通るように偏向させ、 マスク出射側第１静電偏向器に対し、該荷電粒子ビーム
を、該マスク出射側第２静電偏向器の光軸方向略中央点
へ向けて該マスク出射側第２静電偏向器に入射するよう
に偏向させ、 マスク出射側第２静電偏向器に対し、該荷電粒子ビーム
が光軸上に略一致するように偏向させることを特徴とす
る荷電粒子ビーム露光方法。1. A first electromagnetic lens, a second electromagnetic lens, and a third electromagnetic lens.
An electromagnetic lens and an aperture are arranged in this order with their optical axes aligned with each other, and a stencil mask having a plurality of transmission hole patterns for shaping the cross section of the charged particle beam is provided substantially perpendicular to the optical axis at the second electromagnetic lens position. An object to be exposed is arranged such that the charged particle beam passes through the first electromagnetic lens, the second electromagnetic lens, the selected transmission hole pattern on the stencil mask, the third electromagnetic lens, and the aperture in this order. There is a first crossover image of the gun crossover between the first electromagnetic lens and the second electromagnetic lens, and the first crossover image is present between the second electromagnetic lens and the third electromagnetic lens. 3 A second crossover image of the gun crossover exists on the electromagnetic lens side, a central axis is made to coincide with the optical axis, and a mask is incident between the first electromagnetic lens and the second electromagnetic lens. Side electrostatic A deflector, and a mask emission-side first electrostatic deflector arranged on the side of the second electromagnetic lens between the second electromagnetic lens and the third electromagnetic lens, with the central axis aligned with the optical axis. , With the central axis aligned with the optical axis, on the side of the third electromagnetic lens between the second electromagnetic lens and the third electromagnetic lens, between the center point in the optical axis direction and the third electromagnetic lens. A charged particle beam exposure method using a charged particle beam exposure apparatus having a mask emission side second electrostatic deflector arranged so that the second crossover image exists, wherein an output voltage of an amplification circuit is The charged particle beam is applied to the mask output side first electrostatic deflector and the mask output side second electrostatic deflector in common, and the charged particle beam is applied to the mask input side electrostatic deflector. A line obtained by extending the charged particle beam emitted from the deflector to the opposite side in the traveling direction is the first cross-over line. The beam is deflected so as to substantially pass through the position of the image, and the charged particle beam is directed toward the mask emission side first electrostatic deflector toward a substantially central point in the optical axis direction of the mask emission side second electrostatic deflector. The mask is deflected so as to be incident on the mask emission side second electrostatic deflector, and is deflected so that the charged particle beam is substantially aligned with the optical axis with respect to the mask emission side second electrostatic deflector. Charged particle beam exposure method. 【請求項２】 上記荷電粒子ビーム露光装置は、 上記マスク入射側静電偏向器の光軸方向中央点が上記第
１クロスオーバ像の位置に略一致するように該マスク入
射側静電偏向器が配置されており、さらに、 中心軸を上記光軸に一致させて、上記マスク入射側静電
偏向器と上記第２電磁レンズとの間又は上記第１電磁レ
ンズと該マスク入射側静電偏向器との間に配置され、光
軸方向長さが該マスク入射側静電偏向器よりも短い第１
補正静電偏向器と、 中心軸を該光軸に一致させて、上記マスク出射側第１静
電偏向器と上記マスク出射側第２静電偏向器との間又は
該マスク出射側第１静電偏向器と上記第２電磁レンズと
の間に配置され、光軸方向長さが該マスク出射側第１静
電偏向器及び該マスク出射側第２静電偏向器のいずれよ
りも短い第２補正静電偏向器とを有し、 該第１補正静電偏向器により、該第１クロスオーバ像の
位置ずれによる、該マスク入射側静電偏向器を出射した
該荷電粒子ビームの軌跡のずれを補正し、該第２補正静
電偏向器により、上記第２クロスオーバ像の位置ずれに
よる、該マスク出射側第２静電偏向器を出射した該荷電
粒子ビームの軌跡のずれを補正することを特徴とする請
求項１記載の荷電粒子ビーム露光方法。2. The charged particle beam exposure apparatus according to claim 1, wherein the mask incident side electrostatic deflector is arranged so that a center point in the optical axis direction of the mask incident side electrostatic deflector substantially coincides with a position of the first crossover image. And the central axis is aligned with the optical axis so as to be located between the mask incident side electrostatic deflector and the second electromagnetic lens or between the first electromagnetic lens and the mask incident side electrostatic deflector. Is disposed between the mask and the mask and has a length in the optical axis direction shorter than that of the electrostatic entrance deflector on the mask entrance side.
A correction electrostatic deflector and a central axis thereof aligned with the optical axis, between the mask emitting side first electrostatic deflector and the mask emitting side second electrostatic deflector, or the mask emitting side first static deflector. A second electrostatic deflector disposed between the electrostatic deflector and the second electromagnetic lens and having a length in the optical axis direction shorter than that of either the mask emitting side first electrostatic deflector or the mask emitting side second electrostatic deflector. A correction electrostatic deflector, wherein the trajectory of the charged particle beam emitted from the mask incident side electrostatic deflector is deviated due to the positional deviation of the first crossover image by the first correction electrostatic deflector. And the second correction electrostatic deflector corrects the deviation of the trajectory of the charged particle beam emitted from the mask emission side second electrostatic deflector due to the position deviation of the second crossover image. The charged particle beam exposure method according to claim 1. 【請求項３】 上記荷電粒子ビーム露光装置は、 上記マスク入射側静電偏向器が、 中心軸を上記光軸に一致させて、上記第１電磁レンズと
上記第２電磁レンズとの間の該第１電磁レンズ側に、光
軸方向中央点と該第１電磁レンズとの間に上記第１クロ
スオーバ像が存在するように配置されたマスク入射側第
１静電偏向器と、 中心軸を該光軸に一致させて、該第１電磁レンズと該第
２電磁レンズとの間の該第２電磁レンズ側に配置された
マスク入射側第２静電偏向器とを有し、さらに、 中心軸を上記光軸に一致させて、上記マスク入射側第１
静電偏向器と上記マスク入射側第２静電偏向器との間又
は該マスク入射側第２静電偏向器と上記第２電磁静電偏
向器との間に配置され、光軸方向長さが該マスク入射側
第１静電偏向器及び該マスク入射側第２静電偏向器のい
ずれよりもよりも短い第１補正静電偏向器と、 中心軸を該光軸に一致させて、上記マスク出射側第１静
電偏向器と上記マスク出射側第２静電偏向器との間又は
該マスク出射側第１静電偏向器と上記第２電磁レンズと
の間に配置され、光軸方向長さが該マスク出射側第１静
電偏向器及び該マスク出射側第２静電偏向器のいずれよ
りも短い第２補正静電偏向器とを有し、 増幅回路の出力電圧を該マスク入射側第１静電偏向器と
該マスク入射側第２静電偏向器とに共通に印加し、 該マスク入射側第１静電偏向器に対し、該光軸を通って
入射する上記荷電粒子ビームを偏向させ、 該マスク入射側第２静電偏向器に対し、該荷電粒子ビー
ムを、出射する該荷電粒子ビームを進行方向反対側へ延
長させた線が該第１クロスオーバ像の位置を略通るよう
に偏向させ、 該第１補正静電偏向器により、該第１クロスオーバ像の
位置ずれによる、該マスク入射側第２静電偏向器を出射
した該荷電粒子ビームの軌跡のずれを補正し、該第２補
正静電偏向器により、上記第２クロスオーバ像の位置ず
れによる、該マスク出射側第２静電偏向器を出射した該
荷電粒子ビームの軌跡のずれを補正することを特徴とす
る請求項１記載の荷電粒子ビーム露光方法。3. The charged particle beam exposure apparatus according to claim 1, wherein the mask incident side electrostatic deflector is arranged between the first electromagnetic lens and the second electromagnetic lens with the central axis aligned with the optical axis. A mask incident side first electrostatic deflector arranged on the first electromagnetic lens side such that the first crossover image exists between the center point in the optical axis direction and the first electromagnetic lens; A mask incident side second electrostatic deflector arranged on the side of the second electromagnetic lens between the first electromagnetic lens and the second electromagnetic lens so as to match the optical axis, and further, The axis is aligned with the optical axis, and the mask incidence side first
It is arranged between the electrostatic deflector and the mask incident-side second electrostatic deflector or between the mask incident-side second electrostatic deflector and the second electromagnetic electrostatic deflector, and has a length in the optical axis direction. Is a first correction electrostatic deflector that is shorter than both the mask incident side first electrostatic deflector and the mask incident side second electrostatic deflector, and has the central axis aligned with the optical axis, It is arranged between the mask emission side first electrostatic deflector and the mask emission side second electrostatic deflector or between the mask emission side first electrostatic deflector and the second electromagnetic lens, and the optical axis direction A second correction electrostatic deflector having a length shorter than either of the mask emission side first electrostatic deflector and the mask emission side second electrostatic deflector, and the output voltage of the amplifier circuit is incident on the mask. Applied to both the first electrostatic deflector on the mask side and the second electrostatic deflector on the mask entrance side, and The charged particle beam incident therethrough is deflected, and a line obtained by extending the charged particle beam to the opposite side in the traveling direction with respect to the mask incident side second electrostatic deflector is The light is deflected so as to substantially pass through the position of the first crossover image, and the first correction electrostatic deflector outputs the second electrostatic deflector on the mask entrance side due to the position shift of the first crossover image. The deviation of the trajectory of the charged particle beam is corrected, and the second correction electrostatic deflector causes the charged particle beam emitted from the mask emission side second electrostatic deflector due to the positional deviation of the second crossover image. 2. The charged particle beam exposure method according to claim 1, wherein the deviation of the trajectory is corrected. 【請求項４】 上記マスク出射側第１静電偏向器及び上
記マスク出射側第２静電偏向器の偏向量を０にした状態
で上記第１電磁レンズの強度を変化させ、上記マスク入
射側静電偏向器の偏向量に対する上記アパーチャの通過
電流が極小となる該第１電磁レンズの強度Ａ１を求め、 該マスク入射側静電偏向器の偏向量を０にした状態で該
第１電磁レンズの強度を変化させ、該マスク出射側第１
静電偏向器及び該マスク出射側第２静電偏向器に同一電
圧を印加しその偏向量に対する該アパーチャの通過電流
が極小となる該第１電磁レンズの強度Ａ２を求め、 上記第１補正静電偏向器に印加する電圧と上記第２補正
静電偏向器に印加する電圧との比Ｍ：Ｎに対し、該第１
電磁レンズの強度Ｌを、 Ｌ＝（Ｍ・Ａ１＋Ｎ・Ａ２）／（Ｍ＋Ｎ） とすることを特徴とする請求項２又は３記載の荷電粒子
ビーム露光方法。4. The intensity of the first electromagnetic lens is changed in a state in which the deflection amounts of the mask emission side first electrostatic deflector and the mask emission side second electrostatic deflector are set to 0, and the mask incidence side is changed. The intensity A1 of the first electromagnetic lens at which the current passing through the aperture is minimized with respect to the deflection amount of the electrostatic deflector is obtained, and the first electromagnetic lens is set with the deflection amount of the mask incident side electrostatic deflector set to 0. Change the intensity of the
The same voltage is applied to the electrostatic deflector and the second electrostatic deflector on the mask emission side, and the intensity A2 of the first electromagnetic lens that minimizes the passing current of the aperture with respect to the deflection amount is obtained. To the ratio M: N of the voltage applied to the electrostatic deflector and the voltage applied to the second correction electrostatic deflector.
4. The charged particle beam exposure method according to claim 2, wherein the intensity L of the electromagnetic lens is L = (M · A1 + N · A2) / (M + N). 【請求項５】 上記比Ｍ：Ｎに初期値を与えて上記式に
より第１電磁レンズの強度Ｌを求め、 該第１電磁レンズの強度を該Ｌにし上記マスク出射側第
１静電偏向器及び上記マスク出射側第２静電偏向器の偏
向量を０にし上記マスク入射側静電偏向器の偏向量を０
にしない状態で、上記第１補正静電偏向器への第１印加
電圧を変化させ、該第１印加電圧に対する上記アパーチ
ャの通過電流が極小となる該第１印加電圧ＶＳ１を求
め、 該第１電磁レンズの強度を該Ｌにし該マスク入射側静電
偏向器の偏向量を０にし該マスク出射側第１静電偏向器
及び該マスク出射側第２静電偏向器に０でない同一電圧
を印加した状態で、上記第２補正静電偏向器への第２印
加電圧を変化させ、該第２印加電圧に対する該アパーチ
ャの通過電流が極小となる該第２印加電圧ＶＳ２を求
め、 該第１印加電圧ＶＳ１と該第２印加電圧ＶＳ２とに基づ
いて上記比Ｍ：Ｎを更新し、 更新した該比Ｍ：Ｎ及び該式に基づいて該第１電磁レン
ズの強度Ｌを更新することを特徴とする請求項４記載の
荷電粒子ビーム露光方法。5. An initial value is given to the ratio M: N to obtain the strength L of the first electromagnetic lens by the above equation, and the strength of the first electromagnetic lens is set to the L, and the mask output side first electrostatic deflector is set. And setting the deflection amount of the mask output side second electrostatic deflector to 0 and setting the deflection amount of the mask incident side electrostatic deflector to 0.
The first applied voltage VS1 for changing the first applied voltage to the first correction electrostatic deflector is calculated to obtain the first applied voltage VS1 at which the passing current of the aperture with respect to the first applied voltage is minimized. The intensity of the electromagnetic lens is set to L, the deflection amount of the mask incident side electrostatic deflector is set to 0, and the same non-zero voltage is applied to the mask emitting side first electrostatic deflector and the mask emitting side second electrostatic deflector. In this state, the second applied voltage to the second correction electrostatic deflector is changed to obtain the second applied voltage VS2 at which the passing current of the aperture with respect to the second applied voltage is minimized, and the first applied voltage is applied. Characterized in that the ratio M: N is updated based on the voltage VS1 and the second applied voltage VS2, and the intensity L of the first electromagnetic lens is updated based on the updated ratio M: N and the formula. 5. The charged particle beam exposure method according to claim 4. 【請求項６】 上記マスク出射側第１静電偏向器又は上
記マスク出射側第２静電偏向器を上記光軸の回りに回転
させてその回転角を調整することを特徴とする請求項１
乃至５のいずれか１つに記載の荷電粒子ビーム露光方
法。6. The mask output side first electrostatic deflector or the mask output side second electrostatic deflector is rotated around the optical axis to adjust a rotation angle thereof.
6. The charged particle beam exposure method according to any one of items 1 to 5. 【請求項７】 上記マスク入射側第１静電偏向器又は上
記マスク入射側第２静電偏向器を上記光軸の回りに回転
させてその回転角を調整することを特徴とする請求項３
記載の荷電粒子ビーム露光方法。7. The mask entrance side first electrostatic deflector or the mask entrance side second electrostatic deflector is rotated around the optical axis to adjust the rotation angle thereof.
The charged particle beam exposure method according to the above. 【請求項８】 増幅回路の出力電圧を、上記マスク入射
側静電偏向器と上記マスク出射側第１静電偏向器と上記
マスク出射側第２静電偏向器とに共通に印加することを
特徴とする請求項１乃至７のいずれか１つに記載の荷電
粒子ビーム露光方法。8. An output voltage of an amplifier circuit is commonly applied to the mask entrance side electrostatic deflector, the mask exit side first electrostatic deflector, and the mask exit side second electrostatic deflector. 8. The charged particle beam exposure method according to claim 1, wherein the method is the charged particle beam exposure method. 【請求項９】 上記荷電粒子ビーム露光装置はさらに、 記憶手段と、 デジタル／アナログ変換器と、 該デジタル／アナログ変換器の出力を増幅して上記マス
ク入射側静電偏向器に印加する増幅回路とを有し、 上記ステンシルマスク上の各透過孔パターンについて、
露光対象物上への荷電粒子ビーム照射の際の過渡的な荷
電粒子ビーム照射量を最大にするための補正値パターン
を該記憶手段に予め格納させておき、 該ステンシルマスク上の透過孔パターンを選択するため
に該デジタル／アナログ変換器へ供給されるデータが変
化する毎に、該データに対応した補正値パターンを該記
憶手段から読み出させ、該記憶手段から読み出された値
と該露光対象物上への該荷電粒子ビームの照射が定常状
態になったときの補正値との和に基づいて、上記第１補
正静電偏向器に駆動電圧を印加することを特徴とする請
求項１記載の荷電粒子ビーム露光方法。9. The charged particle beam exposure apparatus further comprises a storage means, a digital / analog converter, and an amplifier circuit for amplifying an output of the digital / analog converter and applying the amplified output to the mask incident side electrostatic deflector. And, for each transmission hole pattern on the stencil mask,
A correction value pattern for maximizing the transient charged particle beam irradiation amount at the time of irradiation of the charged particle beam on the exposure object is stored in advance in the storage means, and the transmission hole pattern on the stencil mask is stored. Each time the data supplied to the digital / analog converter for selection changes, a correction value pattern corresponding to the data is read from the storage means, and the value read from the storage means and the exposure The driving voltage is applied to the first correction electrostatic deflector based on the sum of the correction value when the irradiation of the charged particle beam onto the object reaches a steady state. The charged particle beam exposure method described. 【請求項１０】 上記荷電粒子ビーム露光装置は、上記
記憶手段が第１メモリと第２メモリとを有しており、 上記ステンシルマスク上の各透過孔パターンについて、
該露光対象物上への荷電粒子ビーム照射の際の過渡的な
荷電粒子ビーム照射量のパターンを該第１メモリに格納
させ、 該ステンシルマスク上の各透過孔パターンについて、該
荷電粒子ビーム照射量に対応した補正値を該第２メモリ
に格納させ、 該第１メモリの出力データにより該第２メモリをアドレ
ス指定することを特徴とする請求項９記載の荷電粒子ビ
ーム露光方法。10. The charged particle beam exposure apparatus, wherein the storage means has a first memory and a second memory, and for each transmission hole pattern on the stencil mask,
A pattern of the transient charged particle beam irradiation amount at the time of irradiation of the charged particle beam on the exposure object is stored in the first memory, and the charged particle beam irradiation amount is stored for each transmission hole pattern on the stencil mask. 10. The charged particle beam exposure method according to claim 9, wherein a correction value corresponding to is stored in the second memory, and the second memory is addressed by the output data of the first memory. 【請求項１１】 第１電磁レンズ、第２電磁レンズ、第
３電磁レンズ及びアパーチャが互いに光軸を一致させて
この順に配置され、荷電粒子ビームの横断面を整形する
透過孔パターンが複数形成されたステンシルマスクが略
第２電磁レンズ位置に該光軸に垂直に配置され、荷電粒
子ビームが該第１電磁レンズ内、該第２電磁レンズ内、
該ステンシルマスク上の選択された透過孔パターン、該
第３電磁レンズ内及び該アパーチャをこの順に通って露
光対象物上に照射され、該第１電磁レンズと該第２電磁
レンズとの間にガンクロスオーバの第１クロスオーバ像
が存在し、該第２電磁レンズと該第３電磁レンズとの間
かつ該第３電磁レンズ側に該ガンクロスオーバの第２ク
ロスオーバ像が存在する荷電粒子ビーム露光装置におい
て、 中心軸を該光軸に一致させて、該第１電磁レンズと該第
２電磁レンズとの間に配置され、出射する該荷電粒子ビ
ームを進行方向反対側へ延長させた線が該第１クロスオ
ーバ像の位置を略通るように偏向するためのマスク入射
側静電偏向器と、 中心軸を該光軸に一致させて、該第２電磁レンズと該第
３電磁レンズとの間の該第２電磁レンズ側に配置され、
該荷電粒子ビームを光軸側へ偏向させるためのマスク出
射側第１静電偏向器と、 中心軸を該光軸に一致させて、該第２電磁レンズと該第
３電磁レンズとの間の該第３電磁レンズ側に、該荷電粒
子ビームが光軸方向略中央点へ向けて入射するように且
つ該光軸方向中央点と該第３電磁レンズとの間に該第２
クロスオーバ像が存在するように配置され、該荷電粒子
ビームを偏向させて光軸上に略一致させるためのマスク
出射側第２静電偏向器と、 出力端が該マスク出射側第１静電偏向器と該マスク出射
側第２静電偏向器とに共通に接続された増幅回路とを有
することを特徴とする荷電粒子ビーム露光装置。11. A first electromagnetic lens, a second electromagnetic lens, a third electromagnetic lens and an aperture are arranged in this order with their optical axes aligned with each other, and a plurality of transmission hole patterns for shaping the cross section of the charged particle beam are formed. A stencil mask is arranged substantially at a position of the second electromagnetic lens perpendicular to the optical axis, and the charged particle beam is in the first electromagnetic lens, in the second electromagnetic lens,
The object to be exposed is irradiated through the selected transmission hole pattern on the stencil mask, the third electromagnetic lens, and the aperture in this order, and a gun is provided between the first electromagnetic lens and the second electromagnetic lens. Charged particle beam in which a first crossover image of a crossover exists and a second crossover image of the gun crossover exists between the second electromagnetic lens and the third electromagnetic lens and on the side of the third electromagnetic lens In the exposure apparatus, a line formed by extending the charged particle beam emitted to the opposite side in the traveling direction is disposed between the first electromagnetic lens and the second electromagnetic lens with the central axis aligned with the optical axis. A mask incident side electrostatic deflector for deflecting the first crossover image so as to substantially pass through the position, and a second electromagnetic lens and a third electromagnetic lens whose central axis coincides with the optical axis. Located on the side of the second electromagnetic lens between It is,
A mask electrostatic discharge side first electrostatic deflector for deflecting the charged particle beam toward the optical axis, and a central axis of the electrostatic deflector between the second electromagnetic lens and the third electromagnetic lens. On the side of the third electromagnetic lens, the charged particle beam is incident toward a substantially central point in the optical axis direction, and the second particle is disposed between the central point in the optical axis direction and the third electromagnetic lens.
A mask output side second electrostatic deflector for deflecting the charged particle beam so that the charged particle beam is substantially aligned with the optical axis and an output end for the mask output side first electrostatic device are arranged so that a crossover image exists. A charged particle beam exposure apparatus comprising a deflector and an amplifier circuit commonly connected to the mask emission side second electrostatic deflector. 【請求項１２】 上記マスク入射側静電偏向器は、光軸
方向中央点が上記第１クロスオーバ像の位置に略一致す
るように配置されていることを特徴とする請求項１１記
載の荷電粒子ビーム露光装置。12. The charging device according to claim 11, wherein the mask incident side electrostatic deflector is arranged such that a central point in the optical axis direction substantially coincides with a position of the first crossover image. Particle beam exposure system. 【請求項１３】 中心軸を上記光軸に一致させて、上記
マスク入射側静電偏向器と上記第２電磁レンズとの間又
は上記第１電磁レンズと該マスク入射側静電偏向器との
間に配置され、光軸方向長さが該マスク入射側静電偏向
器よりも短い第１補正静電偏向器と、 中心軸を該光軸に一致させて、上記マスク出射側第１静
電偏向器と上記マスク出射側第２静電偏向器との間又は
該マスク出射側第１静電偏向器と上記第２電磁レンズと
の間に配置され、光軸方向長さが該マスク出射側第１静
電偏向器及び該マスク出射側第２静電偏向器のいずれよ
りも短い第２補正静電偏向器とを有し、該第１補正静電
偏向器は、上記第１クロスオーバ像の位置ずれによる、
該マスク入射側静電偏向器を出射した該荷電粒子ビーム
の軌跡のずれを補正するためのものであり、該第２補正
静電偏向器は、上記第２クロスオーバ像の位置ずれによ
る、該マスク出射側第２静電偏向器を出射した該荷電粒
子ビームの軌跡のずれを補正するためのものであること
を特徴とする請求項１２記載の荷電粒子ビーム露光装
置。13. A center axis is made to coincide with the optical axis, and between the mask incident side electrostatic deflector and the second electromagnetic lens or between the first electromagnetic lens and the mask incident side electrostatic deflector. A first correction electrostatic deflector disposed between the first and second electrostatic deflectors whose length in the optical axis direction is shorter than that of the mask incident side electrostatic deflector; It is arranged between the deflector and the mask emission side second electrostatic deflector or between the mask emission side first electrostatic deflector and the second electromagnetic lens, and the length in the optical axis direction is the mask emission side. A second correction electrostatic deflector that is shorter than either the first electrostatic deflector or the mask emission-side second electrostatic deflector, wherein the first correction electrostatic deflector is the first crossover image. Due to the misalignment of
The second correction electrostatic deflector is for correcting the deviation of the trajectory of the charged particle beam emitted from the electrostatic entrance deflector on the mask entrance side, and the second correction electrostatic deflector detects the position deviation of the second crossover image. 13. The charged particle beam exposure apparatus according to claim 12, wherein the charged particle beam exposure apparatus is for correcting the deviation of the trajectory of the charged particle beam emitted from the second electrostatic deflector on the mask emission side. 【請求項１４】 上記マスク入射側静電偏向器は、 中心軸を上記光軸に一致させて、上記第１電磁レンズと
上記第２電磁レンズとの間の該第１電磁レンズ側に、光
軸方向中央点と該第１電磁レンズとの間に上記第１クロ
スオーバ像が存在するように配置され、該光軸を通って
入射する上記荷電粒子ビームを偏向させるためのマスク
入射側第１静電偏向器と、 中心軸を該光軸に一致させて、該第１電磁レンズと該第
２電磁レンズとの間の該第２電磁レンズ側に配置され、
出射する該荷電粒子ビームを進行方向反対側へ延長させ
た線が該第１クロスオーバ像の位置を略通るように偏向
するためのマスク入射側第２静電偏向器とを有し、さら
に、 出力端が該マスク入射側第１静電偏向器と該マスク入射
側第２静電偏向器とに共通に接続された増幅回路を有す
ることを特徴とする請求項１１記載の荷電粒子ビーム露
光装置。14. The mask incident-side electrostatic deflector has a central axis aligned with the optical axis, and an optical deflector is provided on a side of the first electromagnetic lens between the first electromagnetic lens and the second electromagnetic lens. A mask entrance side first for arranging the first crossover image between an axial center point and the first electromagnetic lens for deflecting the charged particle beam incident through the optical axis. An electrostatic deflector, the central axis of which is aligned with the optical axis, and the electrostatic deflector is disposed on the second electromagnetic lens side between the first electromagnetic lens and the second electromagnetic lens,
A mask incident side second electrostatic deflector for deflecting a line extending the emitted charged particle beam to the opposite side in the traveling direction so as to pass substantially through the position of the first crossover image, and 12. The charged particle beam exposure apparatus according to claim 11, wherein the output end has an amplifier circuit commonly connected to the mask entrance side first electrostatic deflector and the mask entrance side second electrostatic deflector. . 【請求項１５】 中心軸を上記光軸に一致させて、上記
マスク入射側第１静電偏向器と上記マスク入射側第２静
電偏向器との間又は該マスク入射側第２静電偏向器と上
記第２電磁静電偏向器との間に配置され、光軸方向長さ
が該マスク入射側第１静電偏向器及び該マスク入射側第
２静電偏向器のいずれよりもよりも短い第１補正静電偏
向器と、 中心軸を該光軸に一致させて、上記マスク出射側第１静
電偏向器と上記マスク出射側第２静電偏向器との間又は
該マスク出射側第１静電偏向器と上記第２電磁レンズと
の間に配置され、光軸方向長さが該マスク出射側第１静
電偏向器及び該マスク出射側第２静電偏向器のいずれよ
りも短い第２補正静電偏向器とを有し、該第１補正静電
偏向器は、上記第１クロスオーバ像の位置ずれによる、
該マスク入射側第２静電偏向器を出射した該荷電粒子ビ
ームの軌跡のずれを補正するためのものであり、該第２
補正静電偏向器は、上記第２クロスオーバ像の位置ずれ
による、該マスク出射側第２静電偏向器を出射した該荷
電粒子ビームの軌跡のずれを補正するためのものである
ことを特徴とする請求項１４記載の荷電粒子ビーム露光
装置。15. A center axis is made to coincide with the optical axis so as to be between the mask incident side first electrostatic deflector and the mask incident side second electrostatic deflector or the mask incident side second electrostatic deflector. Disposed between the second electromagnetic electrostatic deflector and the second electromagnetic electrostatic deflector, and has a length in the optical axis direction larger than that of either the mask incident side first electrostatic deflector or the mask incident side second electrostatic deflector. A short first correction electrostatic deflector, with its central axis aligned with the optical axis, between the mask emission side first electrostatic deflector and the mask emission side second electrostatic deflector, or the mask emission side It is arranged between the first electrostatic deflector and the second electromagnetic lens and has a length in the optical axis direction larger than that of either the mask emitting side first electrostatic deflector or the mask emitting side second electrostatic deflector. A short second correction electrostatic deflector, wherein the first correction electrostatic deflector is caused by the position shift of the first crossover image,
This is for correcting the deviation of the trajectory of the charged particle beam emitted from the second electrostatic deflector on the mask entrance side.
The correction electrostatic deflector is for correcting the deviation of the trajectory of the charged particle beam emitted from the mask emission side second electrostatic deflector due to the positional deviation of the second crossover image. 15. The charged particle beam exposure apparatus according to claim 14. 【請求項１６】 上記マスク出射側第１静電偏向器又は
上記マスク出射側第２静電偏向器を上記光軸の回りに回
転させてその回転角を調整する調整手段を有することを
特徴とする請求項１１乃至１５のいずれか１つに記載の
荷電粒子ビーム露光装置。16. An adjusting means for rotating the mask emitting side first electrostatic deflector or the mask emitting side second electrostatic deflector around the optical axis to adjust a rotation angle thereof. The charged particle beam exposure apparatus according to any one of claims 11 to 15. 【請求項１７】 上記マスク入射側第１静電偏向器又は
上記マスク入射側第２静電偏向器を上記光軸の回りに回
転させてその回転角を調整する調整手段を有することを
特徴とする請求項１４又は１５記載の荷電粒子ビーム露
光装置。17. An adjusting means for rotating the mask incident side first electrostatic deflector or the mask incident side second electrostatic deflector around the optical axis to adjust a rotation angle thereof. The charged particle beam exposure apparatus according to claim 14 or 15. 【請求項１８】 上記増幅回路の出力端は上記マスク入
射側静電偏向器にも共通に接続されていることを特徴と
する請求項１１乃至１３のいずれか１つに記載の荷電粒
子ビーム露光装置。18. The charged particle beam exposure according to claim 11, wherein the output end of the amplification circuit is also commonly connected to the mask incident side electrostatic deflector. apparatus. 【請求項１９】 請求項１１記載の増幅回路と請求項１
４記載の増幅回路とが同一物であることを特徴とする請
求項１４又は１５記載の荷電粒子ビーム露光装置。19. The amplifier circuit according to claim 11 and claim 1.
16. The charged particle beam exposure apparatus according to claim 14 or 15, wherein the amplifier circuit according to claim 4 is the same as the amplifier circuit. 【請求項２０】 上記ステンシルマスク上の各透過孔パ
ターンについて、露光対象物上への荷電粒子ビーム照射
の際の過渡的な荷電粒子ビーム照射量を最大にするため
の補正値パターンが格納された記憶手段と、 デジタル／アナログ変換器と、 該デジタル／アナログ変換器の出力を増幅して上記マス
ク入射側静電偏向器に印加する増幅回路と、 該ステンシルマスク上の透過孔パターンを選択するため
に該デジタル／アナログ変換器へ供給されるデータが変
化する毎に、該データに対応した補正値パターンを該記
憶手段から読み出させるデータ読み出し制御手段と、 該記憶手段から読み出された値と該露光対象物上への該
荷電粒子ビームの照射が定常状態になったときの補正値
との和に基づいて、上記第１補正静電偏向器に駆動電圧
を印加する第１補正静電偏向器駆動手段とを有すること
を特徴とする請求項１１記載の荷電粒子ビーム露光装
置。20. For each transmission hole pattern on the stencil mask, a correction value pattern for maximizing a transient charged particle beam irradiation amount at the time of irradiation of the charged particle beam on the exposure object is stored. Storage means, a digital / analog converter, an amplifier circuit for amplifying the output of the digital / analog converter and applying it to the mask incident side electrostatic deflector, and for selecting a transmission hole pattern on the stencil mask Data read control means for reading a correction value pattern corresponding to the data from the storage means each time the data supplied to the digital / analog converter changes, and a value read from the storage means. A drive voltage is applied to the first correction electrostatic deflector based on the sum with a correction value when the irradiation of the charged particle beam onto the exposure object is in a steady state. The charged particle beam exposure device according to claim 11, characterized in that it comprises a first correction electrostatic deflector drive means. 【請求項２１】 上記記憶手段は、 上記ステンシルマスク上の各透過孔パターンについて、
該露光対象物上への荷電粒子ビーム照射の際の過渡的な
荷電粒子ビーム照射量のパターンが格納された第１メモ
リと、 該ステンシルマスク上の各透過孔パターンについて、該
荷電粒子ビーム照射量に対応した補正値が格納され、該
第１メモリの出力データによりアドレス指定される第２
メモリとを有することを特徴とする請求項２０記載の荷
電粒子ビーム露光装置。21. The storage means stores, for each transmission hole pattern on the stencil mask,
A first memory in which a pattern of a transient charged particle beam irradiation amount upon irradiation of the charged particle beam onto the exposure object is stored, and the charged particle beam irradiation amount for each transmission hole pattern on the stencil mask. A second correction value stored in the first memory and addressed by the output data of the first memory.
21. The charged particle beam exposure apparatus according to claim 20, further comprising a memory.
JP25639695A 1995-06-08 1995-10-03 Charged particle beam exposure method and apparatus Expired - Lifetime JP3461066B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP25639695A JP3461066B2 (en) 1995-10-03 1995-10-03 Charged particle beam exposure method and apparatus
US08/634,410 US5757015A (en) 1995-06-08 1996-04-18 Charged-particle-beam exposure device and charged-particle-beam exposure method
US08/917,464 US5969365A (en) 1995-06-08 1997-08-26 Charged-particle-beam exposure device and charged-particle-beam exposure method
US09/353,586 US6242751B1 (en) 1995-06-08 1999-07-15 Charged-particle-beam exposure device and charged-particle-beam exposure method
US09/826,913 US6420700B2 (en) 1995-06-08 2001-04-06 Charged-particle-beam exposure device and charged-particle-beam exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25639695A JP3461066B2 (en) 1995-10-03 1995-10-03 Charged particle beam exposure method and apparatus

Publications (2)

Publication Number Publication Date
JPH09102448A true JPH09102448A (en) 1997-04-15
JP3461066B2 JP3461066B2 (en) 2003-10-27

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007043083A (en) * 2005-07-04 2007-02-15 Nuflare Technology Inc Method for correcting beam drift of electron beam, and method for drawing electron beam
JP2007329293A (en) * 2006-06-08 2007-12-20 Jeol Ltd Charged particle beam apparatus
JP2009532887A (en) * 2006-04-03 2009-09-10 イーエムエス ナノファブリカツィオン アーゲー Particle beam exposure system with total modulation of patterned beam
JP2010161415A (en) * 2005-12-15 2010-07-22 Nuflare Technology Inc Charged particle beam drawing method and apparatus of the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007043083A (en) * 2005-07-04 2007-02-15 Nuflare Technology Inc Method for correcting beam drift of electron beam, and method for drawing electron beam
JP2010161415A (en) * 2005-12-15 2010-07-22 Nuflare Technology Inc Charged particle beam drawing method and apparatus of the same
JP2009532887A (en) * 2006-04-03 2009-09-10 イーエムエス ナノファブリカツィオン アーゲー Particle beam exposure system with total modulation of patterned beam
JP2007329293A (en) * 2006-06-08 2007-12-20 Jeol Ltd Charged particle beam apparatus

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