JPH0574878A - Test method of wafer - Google Patents

Test method of wafer

Info

Publication number
JPH0574878A
JPH0574878A JP3234197A JP23419791A JPH0574878A JP H0574878 A JPH0574878 A JP H0574878A JP 3234197 A JP3234197 A JP 3234197A JP 23419791 A JP23419791 A JP 23419791A JP H0574878 A JPH0574878 A JP H0574878A
Authority
JP
Japan
Prior art keywords
test
chip
wafer
defective
inferior
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3234197A
Other languages
Japanese (ja)
Inventor
Nobuaki Abe
伸昭 阿部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Yamagata Ltd
Original Assignee
NEC Yamagata Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Yamagata Ltd filed Critical NEC Yamagata Ltd
Priority to JP3234197A priority Critical patent/JPH0574878A/en
Publication of JPH0574878A publication Critical patent/JPH0574878A/en
Pending legal-status Critical Current

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

PURPOSE:To shorten test time and contrive to improve throughput and to reduce test cost by a method wherein test results of a semiconductor element made or a wafer are stored in a memory device for each chip and only the chip judged as inferior one is set to be an object of tests to be carried out a second time or after. CONSTITUTION:At a first test, an object to be tested is all chips on a wafer 3. At this time, if the results of the chip test are inferior, marking is not performed. The test results by a test device 1 and an address of the chip are written into a memory device 13 and a wafer stage 4 of a probing device 2 moves to test the next chip. Next, when the wafer 3 is set to be on the wafer stage 4, the previous test results are read from the memory device 13 via an interface 11 for the memory device, and if the test results are superior, the next chip is picked up without testing the chip. If the previous test results are inferior, the chip is tested. If the results are inferior, the inferior marking is performed by a marking device 6.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はウェーハ内に作り込まれ
た半導体素子をウェーハプロービング装置を用いて、チ
ップごとにその機能及び特性を試験するウェーハの試験
方法に関し、特に不良と判定されたチップを再度試験す
る際のウェーハの試験方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer test method for testing the function and characteristics of each semiconductor chip formed in a wafer by using a wafer probing apparatus. The present invention relates to a wafer test method for retesting.

【0002】[0002]

【従来の技術】不良品を対象として再度試験を行なう方
法は、組立を完了した個々の製品では、良品と不良品を
完全に分離できるため、特に問題なく行える。しかし、
ウェーハ段階の試験では、同一ウェーハ内に良品チップ
と不良チップが混在している為、ウェーハ内の全チップ
の試験が終了しても、良品チップと不良チップは混在し
たままで見分けが付かない。従って、ウェーハ内の良品
チップと不良チップを見分ける為に、不良チップには不
良マークを付ける。
2. Description of the Related Art A method of retesting a defective product can be performed without any particular problem since the non-defective product and the defective product can be completely separated from each other for each assembled product. But,
In the test at the wafer stage, since good chips and defective chips are mixed in the same wafer, even if all chips in the wafer have been tested, good chips and defective chips remain mixed and cannot be distinguished. Therefore, in order to distinguish a good chip and a defective chip in the wafer, a defective mark is attached to the defective chip.

【0003】この不良マークを付ける方法として、レー
ザーなどを用いて、不良チップを破壊し、その破壊跡を
不良マークとする方法と、インクを用いて、印を付ける
方法がある。破壊されたチップは二度とは使えない。
又、インクで印を付けた場合も、インクをきちんと除去
するには、専用の装置を必要とする為、従来、ウェーハ
段階での不良チップの再試験は行われていない。
As a method of making this defective mark, there are a method of destroying a defective chip by using a laser and the like, and making a mark of the destruction into a defective mark, and a method of making a mark by using ink. A destroyed chip can never be used again.
Further, even when marking is made with ink, a dedicated device is required to properly remove the ink, so that retesting of defective chips at the wafer stage has not been performed conventionally.

【0004】しかし、試験装置等に何らかの異常が発生
し、良品を不良と判定した場合、あるいは、製品スペッ
クが非常に厳しいため、規格に対しぎりぎりで不良品と
判定された場合等、第1回目の試験で不良と判定された
チップのみを対象とし再試験が必要となるケースが発生
する。
However, the first time, for example, when some abnormality occurs in the test equipment and the good product is determined to be defective, or when the product specifications are very strict and the product is determined to be defective just within the specifications, the first time In some cases, retesting is required only for chips that have been determined to be defective in the test.

【0005】しかしながら、不良マークを付けずに試験
を行ない、再度不良チップの試験を目的にウェーハ内の
チップを試験する場合は、そのウェーハ内の良品チップ
をも対象としてしまうため、全チップを再度試験し直す
方法がとられている。
However, when a chip is tested in a wafer for the purpose of testing a defective chip again by carrying out a test without making a defective mark, all non-defective chips in the wafer are targeted, and all chips are re-tested. A way to retest is taken.

【0006】[0006]

【発明が解決しようとする課題】このように従来のウェ
ーハの試験方法では、不良チップの再試験を行なう為に
は、1回目の試験で不良マークを付けずに試験を行なえ
ばよいが、2回目以降の試験では1回目で良品と判定さ
れたチップをも試験の対象としなければならない為、試
験時間も長くなり、非効率的な試験となってスループッ
トが低下するという欠点がある。
As described above, in the conventional wafer testing method, in order to retest a defective chip, the first test may be performed without a defective mark. In the tests after the first time, the chips judged to be non-defective in the first time also have to be the target of the test, so that the test time becomes long and the test becomes inefficient, and the throughput is lowered.

【0007】又、何らかの予期せぬ要因により、前回、
良品と判定されたチップが2回目以降の試験で不良と判
定された場合、不良マークが付いてしまい、本来、良品
であるチップが使えなくなってしまう場合もある。
Also, due to some unexpected factors,
When a chip determined to be a non-defective product is determined to be defective in the second and subsequent tests, a defective mark may be attached, and the originally non-defective chip may not be usable.

【0008】[0008]

【課題を解決するための手段】本発明のウェーハの試験
方法は、ウェーハ内に作り込まれた半導体素子の試験結
果をチップごとに記憶装置に記憶させ、不良と判定され
たチップのみを2回目以降の試験の対象とするものであ
る。
According to the method of testing a wafer of the present invention, the test results of the semiconductor elements formed in the wafer are stored in a storage device for each chip, and only the chips judged to be defective are tested for the second time. It is the target of the subsequent tests.

【0009】[0009]

【実施例】次に本発明について図面を参照して説明す
る。図1及び図2は本発明の一実施例を説明するための
工程図、図3は本実施例を説明するためのテストシステ
ムのブロック図である。試験を行なうウェーハ3はプロ
ービング装置2の内のウェーハステージ4に載せられ
る。そしてこのプロービング装置2には、制御装置7を
介して試験装置1とマーキング装置6及び記憶装置13
とに接続されている。
The present invention will be described below with reference to the drawings. 1 and 2 are process diagrams for explaining one embodiment of the present invention, and FIG. 3 is a block diagram of a test system for explaining this embodiment. The wafer 3 to be tested is placed on the wafer stage 4 in the probing apparatus 2. The probing device 2 is connected to the test device 1, the marking device 6 and the storage device 13 via the control device 7.
Connected to and.

【0010】まず、1回目の試験は図1に示すように、
従来と同様にウェーハ3の全チップを対象に試験が行な
われる。この時、チップの試験の結果が不良であって
も、マーキング装置6による不良マーキングは行なわな
い。そして試験装置1による試験の結果は、試験装置用
インターフェイス12を介して、制御装置7へ取り込ま
れ、同時にプロービング装置2からは、そのチップのア
ドレスがX−Yコーディネータ5により、プロービング
装置用インターフェイス9を介して取り込まれる。その
X−Yアドレスと試験結果をチップ対応で記憶装置用イ
ンターフェイス11を介して記憶装置13に書き込み、
プロービング装置2のウェーハステージ4が移動し、次
のチップが試験される。
First, in the first test, as shown in FIG.
The test is performed on all the chips of the wafer 3 as in the conventional case. At this time, even if the result of the chip test is defective, the marking device 6 does not perform defective marking. Then, the result of the test by the test apparatus 1 is taken into the control apparatus 7 via the test apparatus interface 12, and at the same time, the chip address from the probing apparatus 2 is changed by the XY coordinator 5 to the probing apparatus interface 9. Be captured via. The XY address and the test result are written to the memory device 13 via the memory device interface 11 in correspondence with the chip,
The wafer stage 4 of the probing device 2 moves and the next chip is tested.

【0011】次に、不良チップのみの試験方法について
図2及び図3を用いて説明する。
Next, a method of testing only defective chips will be described with reference to FIGS.

【0012】初めに、ウェーハ3がウェーハステージ4
にセットされると、試験チップのアドレスがX−Yコー
ディネータ5により、プロービング装置用インターフェ
イス9を介して制御装置7へ送られる。同時に記憶装置
用インターフェイス11を介して前の試験結果が記憶装
置13より読み取られ、良品であれば制御装置7のコン
トローラ8はプロービング装置2へ次のチップへの移動
の信号を返し、試験を行わない。前の試験結果が不良で
あれば、コントローラ8は試験装置用インターフェイス
12を介して試験装置1にテストスタート信号を送信
し、チップの試験を行なう。その試験の結果が良品であ
れば、プロービング装置2へ次のチップへの移動の信号
を送信する。不良であればマーキング装置用インターフ
ェイス10を介してマーキング装置6へ不良信号を送信
し、マーキング装置6は不良マーキングを行なった後、
プロービング装置2へ次のチップへの移動の信号を送信
する。
First, the wafer 3 is moved to the wafer stage 4
When set to, the address of the test chip is sent by the XY coordinator 5 to the control device 7 via the interface 9 for the probing device. At the same time, the previous test result is read from the storage device 13 via the storage device interface 11, and if it is a non-defective product, the controller 8 of the control device 7 returns a signal of movement to the next chip to the probing device 2 to perform the test. Absent. If the previous test result is defective, the controller 8 transmits a test start signal to the test apparatus 1 via the test apparatus interface 12 to test the chip. If the result of the test is non-defective, a signal for moving to the next chip is transmitted to the probing device 2. If defective, a defective signal is transmitted to the marking device 6 through the marking device interface 10, and the marking device 6 performs defective marking,
The signal of the movement to the next chip is transmitted to the probing device 2.

【0013】以上、不良品の再試験を1回行なう場合に
ついて説明したが複数回行なう場合も同様であり、最後
の試験の時に図2の工程図に従って試験される。それま
での試験は1回目の試験を図1のフローチャートに従っ
て試験し、2回目から最後の試験の前までは、図4のフ
ローチャートに従って、試験する。
Although the case where the defective product is retested once has been described above, the same applies to the case where the defective product is retested a plurality of times, and the test is performed according to the process diagram of FIG. 2 at the last test. For the tests up to that point, the first test is performed according to the flowchart of FIG. 1, and from the second time to before the final test, the test is performed according to the flowchart of FIG.

【0014】[0014]

【発明の効果】以上、説明したように本発明は、ウェー
ハ内で既に良品と判定されたチップを自動的に試験の対
象から外し、不良と判定されているチップのみを試験の
対象とする為、不良チップの再試験が可能となる。又、
再試験では試験の対象となるチップが減り、テスト時間
が短縮され、スループットの向上と試験コストの低減が
可能となる。
As described above, according to the present invention, the chips which have already been determined to be non-defective in the wafer are automatically excluded from the test target, and only the chips which are determined to be defective are targeted for the test. It is possible to retest defective chips. or,
In the retest, the number of chips to be tested is reduced, the test time is shortened, throughput can be improved, and test cost can be reduced.

【0015】さらに、複数のユーザーより別々のスペッ
クの要求があった場合においても、個々のユーザー別の
テストプログラムによる再試験が可能となる為、同一ウ
ェーハ内より複数のユーザー向けの良品チップを取るこ
とができ、コストダウンが可能となる。
Further, even when a plurality of users request different specifications, retesting can be performed by a test program for each user, so that non-defective chips for a plurality of users can be taken from the same wafer. Therefore, the cost can be reduced.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例を説明するための工程図。FIG. 1 is a process drawing for explaining an embodiment of the present invention.

【図2】本発明の一実施例を説明するための工程図。FIG. 2 is a process drawing for explaining an embodiment of the present invention.

【図3】実施例を説明するためのテストシステムのブロ
ック図。
FIG. 3 is a block diagram of a test system for explaining an embodiment.

【図4】本発明の他の実施例を説明するための工程図。FIG. 4 is a process drawing for explaining another embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 試験装置 2 プロービング装置 3 ウェーハ 4 ウェーハステージ 5 X−Yコーディネータ 6 マーキング装置 7 制御装置 8 コントローラ 9 プロービング装置用インターフェイス 10 マーキング装置用インターフェイス 11 記憶装置用インターフェイス 12 試験装置用インターフェイス 13 記憶装置 1 Test Equipment 2 Probing Equipment 3 Wafer 4 Wafer Stage 5 XY Coordinator 6 Marking Equipment 7 Control Equipment 8 Controller 9 Probing Equipment Interface 10 Marking Equipment Interface 11 Memory Equipment Interface 12 Test Equipment Interface 13 Memory Equipment

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 ウェーハ内に作り込まれた半導体素子の
試験結果をチップごとに記憶装置に記憶させ、不良と判
定されたチップのみを2回目以降の試験の対象とするこ
とを特徴とするウェーハの試験方法。
1. A wafer, characterized in that the test result of a semiconductor device formed in a wafer is stored in a memory device for each chip, and only the chips determined to be defective are subjected to the second and subsequent tests. Test method.
JP3234197A 1991-09-13 1991-09-13 Test method of wafer Pending JPH0574878A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3234197A JPH0574878A (en) 1991-09-13 1991-09-13 Test method of wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3234197A JPH0574878A (en) 1991-09-13 1991-09-13 Test method of wafer

Publications (1)

Publication Number Publication Date
JPH0574878A true JPH0574878A (en) 1993-03-26

Family

ID=16967210

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3234197A Pending JPH0574878A (en) 1991-09-13 1991-09-13 Test method of wafer

Country Status (1)

Country Link
JP (1) JPH0574878A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998033213A1 (en) * 1997-01-29 1998-07-30 Hitachi, Ltd. Method for manufacturing semiconductor device
JP2000515662A (en) * 1996-08-07 2000-11-21 マイクロン、テクノロジー、インコーポレーテッド System for optimizing test and repair times of defective integrated circuits
KR100495433B1 (en) * 1996-08-30 2005-09-26 가부시키가이샤 큐슈일렉트로닉스시스템 Bonding defect detection device of semiconductor
US7253650B2 (en) 2004-05-25 2007-08-07 International Business Machines Corporation Increase productivity at wafer test using probe retest data analysis
JP2008270523A (en) * 2007-04-20 2008-11-06 Fujitsu Microelectronics Ltd Multi process testing method and multi process testing device
JP2013083895A (en) * 2011-10-12 2013-05-09 Hitachi Chemical Co Ltd Manufacturing method of optical waveguide
CN114112653A (en) * 2020-08-25 2022-03-01 胜高股份有限公司 Method for reducing incidence of cracking of semiconductor wafer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59127844A (en) * 1983-01-12 1984-07-23 Toshiba Corp Test of semiconductor wafer
JPH01214133A (en) * 1988-02-23 1989-08-28 Nec Corp Marking of semiconductor wafer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59127844A (en) * 1983-01-12 1984-07-23 Toshiba Corp Test of semiconductor wafer
JPH01214133A (en) * 1988-02-23 1989-08-28 Nec Corp Marking of semiconductor wafer

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000515662A (en) * 1996-08-07 2000-11-21 マイクロン、テクノロジー、インコーポレーテッド System for optimizing test and repair times of defective integrated circuits
KR100495433B1 (en) * 1996-08-30 2005-09-26 가부시키가이샤 큐슈일렉트로닉스시스템 Bonding defect detection device of semiconductor
WO1998033213A1 (en) * 1997-01-29 1998-07-30 Hitachi, Ltd. Method for manufacturing semiconductor device
US7253650B2 (en) 2004-05-25 2007-08-07 International Business Machines Corporation Increase productivity at wafer test using probe retest data analysis
US7463047B2 (en) 2004-05-25 2008-12-09 International Business Machines Corporation Increase productivity at wafer test using probe retest data analysis
US7573284B2 (en) 2004-05-25 2009-08-11 International Business Machines Corporation Increase productivity at wafer test using probe retest data analysis
JP2008270523A (en) * 2007-04-20 2008-11-06 Fujitsu Microelectronics Ltd Multi process testing method and multi process testing device
JP2013083895A (en) * 2011-10-12 2013-05-09 Hitachi Chemical Co Ltd Manufacturing method of optical waveguide
CN114112653A (en) * 2020-08-25 2022-03-01 胜高股份有限公司 Method for reducing incidence of cracking of semiconductor wafer

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