JPH0562873A - Semiconductor manufacturing apparatus - Google Patents
Semiconductor manufacturing apparatusInfo
- Publication number
- JPH0562873A JPH0562873A JP3248519A JP24851991A JPH0562873A JP H0562873 A JPH0562873 A JP H0562873A JP 3248519 A JP3248519 A JP 3248519A JP 24851991 A JP24851991 A JP 24851991A JP H0562873 A JPH0562873 A JP H0562873A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- exposure
- semiconductor
- communication line
- communication
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
- G03F7/7075—Handling workpieces outside exposure position, e.g. SMIF box
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体製造装置に関し、
特に、前・後工程処理装置と直接結合してウエハの授受
を行い、処理の自動化を行わせる半導体製造装置に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus,
In particular, the present invention relates to a semiconductor manufacturing apparatus that directly couples with pre- and post-process processing devices to transfer wafers and automate processing.
【０００２】[0002]
【従来の技術】従来の半導体製造装置において、露光装
置とその前・後工程処理装置（レジスト塗布装置・現像
装置）とを直接結合（インライン）して、ウエハの受け
渡しを行う場合、装置双方間を通信回線で結び、ウエハ
授受のための制御信号のみの通信を行っていた。また、
装置全体の自動化を行う際、そのウエハを処理する上で
必要な条件（マスク、露光量等のパラメータ）は上記通
信回線とは別に設けた通信回線を用いて、この通信回線
に接続されたホストコンピュータ等と通信してデータを
得る事により、自動化を実現していた。2. Description of the Related Art In a conventional semiconductor manufacturing apparatus, when an exposure apparatus and a pre / post-process apparatus (resist coating apparatus / developing apparatus) are directly connected (in-line) to transfer a wafer, the wafer is transferred between both apparatuses. Were connected by a communication line, and communication was performed only with control signals for wafer transfer. Also,
When automating the entire apparatus, the conditions (parameters such as mask and exposure amount) necessary for processing the wafer are determined by using a communication line provided separately from the above communication line and a host connected to this communication line. Automation was realized by communicating with computers and obtaining data.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上記従
来例ではウエハ授受の通信回線とは別の通信回線を設け
て処理条件の情報を取得していたため、次のような欠点
があった。However, in the above-mentioned conventional example, since the communication line different from the wafer transfer communication line is provided to acquire the processing condition information, there are the following drawbacks.
【０００４】（１）処理条件の情報を取得するための通
信回線を別に容易しなければならない。このため配線等
が複雑となり、また配線作業も面倒になる。(1) It is necessary to separately provide a communication line for acquiring information on processing conditions. For this reason, the wiring and the like are complicated, and the wiring work is also troublesome.
【０００５】（２）ウエハ（ウエハ授受）とその処理条
件情報との流れが別系統（別通信）になっているため、
管理および、制御が複雑になる。(2) Since the flow of the wafer (wafer transfer) and the processing condition information thereof is in a separate system (separate communication),
Management and control become complicated.
【０００６】（３）枚葉処理（ウエハ一枚毎に処理条件
が異る）の場合ウエハ一枚毎に通信を行うため、通信回
数が増大し、効率が悪く、装置スループットが低下す
る。(3) Single wafer processing (processing conditions differ for each wafer) Since communication is performed for each wafer, the number of communications increases, the efficiency is poor, and the apparatus throughput decreases.
【０００７】本発明は上記従来技術の欠点に鑑みなされ
たものであって、露光工程の前後処理装置間において、
ウエハ授受の通信とウエハ処理条件データの通信とを同
一系統の通信回線で行い、通信効率を向上させ装置スル
ープットの増大を図った半導体製造装置の提供を目的と
する。The present invention has been made in view of the above-mentioned drawbacks of the prior art.
An object of the present invention is to provide a semiconductor manufacturing apparatus in which communication for wafer transfer and communication of wafer processing condition data are performed through a communication line of the same system to improve communication efficiency and increase apparatus throughput.
【０００８】[0008]
【課題を解決するための手段および作用】前記目的を達
成するため、本発明によれば、前・後工程装置間でのウ
エハ受け渡しのための通信回線は、ウエハ受け渡し制御
信号だけでなく、処理条件の情報をも同時に通信可能と
する。これによりホストコンピュータ等とのデータ交換
用通信回線を別に用いることなく、半導体露光装置の処
理条件を切り換えることが可能になる。In order to achieve the above-mentioned object, according to the present invention, a communication line for transferring a wafer between front and back process equipment is not limited to a wafer transfer control signal, but a processing line. The condition information can be communicated at the same time. This makes it possible to switch the processing conditions of the semiconductor exposure apparatus without using a separate data exchange communication line with the host computer or the like.
【０００９】[0009]
【実施例】図１は、本発明が実施される半導体露光装置
を取り巻く自動化ラインの実施例を示すブロック図であ
る。1 is a block diagram showing an embodiment of an automated line surrounding a semiconductor exposure apparatus in which the present invention is implemented.
【００１０】図１に於いて、１は半導体露光の前工程装
置として、ウエハに感光剤を塗布するレジスト塗布装置
であり、１ａは半導体露光装置にウエハを搬出するウエ
ハ搬出部である。２は本発明に係わる半導体露光装置で
あり、マスク上のパターンをレジストが塗布されたウエ
ハ上に転写する。２ａはレジスト塗布装置１からのウエ
ハを露光装置２内に搬入するウエハ搬入部である。３は
レジスト塗布装置１の搬出部１ａから送り出されたウエ
ハを半導体露光装置２の搬入部２ａに送り込むウエハ搬
送機構である。In FIG. 1, reference numeral 1 is a resist coating apparatus for applying a photosensitive agent to a wafer as a pre-process for semiconductor exposure, and 1a is a wafer unloading section for unloading the wafer to the semiconductor exposure apparatus. A semiconductor exposure apparatus 2 according to the present invention transfers a pattern on a mask onto a wafer coated with a resist. Reference numeral 2a is a wafer carry-in section for carrying the wafer from the resist coating apparatus 1 into the exposure apparatus 2. Reference numeral 3 denotes a wafer transfer mechanism that transfers the wafer sent from the carry-out section 1a of the resist coating apparatus 1 to the carry-in section 2a of the semiconductor exposure apparatus 2.
【００１１】４はＲＳ２３２Ｃ等の規格の通信線であ
り、ウエハ搬送機構３に送り出されるウエハの装置間授
受の制御信号のやりとりを行うと同時に、半導体露光装
置２にそのウエハの処理条件の情報を送り込む。２ｂは
露光したウエハを現像装置に搬出するウエハ搬出部であ
る。Reference numeral 4 is a communication line of a standard such as RS232C, which exchanges control signals for exchanging the wafers sent to the wafer transfer mechanism 3 between the apparatuses, and at the same time, transmits information on the processing conditions of the wafers to the semiconductor exposure apparatus 2. Send in. Reference numeral 2b is a wafer unloading unit that carries out the exposed wafer to the developing device.
【００１２】５は半導体露光の後工程装置としての現像
装置であり、５ａはウエハ搬入部である。６は半導体露
光装置２のウエハ搬出部２ｂから送り出されたウエハを
現像装置の５のウエハ搬入部５ａに送り込むウエハ搬送
機構である。７は前記通信線４と同様の通信線である。
ここではこの通信線７はウエハの露光結果の情報をもあ
わせて通信する。Reference numeral 5 is a developing device as a post-process device for semiconductor exposure, and 5a is a wafer carry-in section. Reference numeral 6 denotes a wafer transfer mechanism that transfers the wafer sent out from the wafer carry-out section 2b of the semiconductor exposure apparatus 2 to the wafer carry-in section 5a of the developing apparatus 5. Reference numeral 7 is a communication line similar to the communication line 4.
Here, the communication line 7 also communicates information about the exposure result of the wafer.
【００１３】図２は本発明に特に係わるデータ内容の例
を示す。ここで４０は、レジスト塗布装置１のウエハ搬
出部１ａから半導体露光装置２のウエハ搬入部２ａにウ
エハが引き渡される時、その制御信号と同時に送られる
情報の内容である。この情報は半導体露光装置２に対す
る処理条件を指示するものである。FIG. 2 shows an example of data contents particularly related to the present invention. Here, 40 is the content of the information sent at the same time as the control signal when the wafer is delivered from the wafer carry-out section 1a of the resist coating apparatus 1 to the wafer carry-in section 2a of the semiconductor exposure apparatus 2. This information indicates processing conditions for the semiconductor exposure apparatus 2.
【００１４】４０−１は半導体露光装置にウエハを搬送
開始したことを知らせると同時に、そのウエハ処理条件
の情報であることを識別させるための識別制御コードで
ある。４０−２は引き渡された当該ウエハを露光するの
に使用する使用マスク名であり、半導体露光装置に予め
複数のマスクが収容されていてその内から選択指示する
ためのものである。４０−４は引き渡された当該ウエハ
を露光するための露光時間である。４０−３は引き渡さ
れた当該ウエハを露光するために使用されるその他のパ
ラメータ群を保持しているパラメータ・ファイルを指定
する露光ジョブ名であり、半導体露光装置に内蔵されて
いる磁気デイスク等に予め設定登録されている複数の露
光ジョブ・ファイルから選択指示するためのものであ
る。Reference numeral 40-1 is an identification control code for notifying the semiconductor exposure apparatus that the wafer has started to be transferred and at the same time for identifying that it is the information of the wafer processing condition. Reference numeral 40-2 is a name of a used mask used for exposing the delivered wafer, and a plurality of masks are stored in the semiconductor exposure apparatus in advance and a selection instruction is given from the masks. 40-4 is an exposure time for exposing the delivered wafer. Reference numeral 40-3 is an exposure job name that designates a parameter file holding other parameter groups used for exposing the delivered wafer, and is used for a magnetic disk or the like built in the semiconductor exposure apparatus. This is for instructing selection from a plurality of exposure job files which are preset and registered.
【００１５】図３はレジスト塗布装置１から半導体露光
装置２にウエハが搬送される時の双方間の動作およびそ
の後の半導体露光装置２の動作を示したフローチャート
である。FIG. 3 is a flow chart showing the operation of the wafer when the wafer is transferred from the resist coating apparatus 1 to the semiconductor exposure apparatus 2 and the operation of the semiconductor exposure apparatus 2 thereafter.
【００１６】以下、図１、図２および図３を参照して本
実施例の動作を説明する。The operation of this embodiment will be described below with reference to FIGS. 1, 2 and 3.
【００１７】図３のフローチャートの左側（ステップＳ
１からＳ６）は前工程装置であるレジスト塗布装置側の
処理シーケンスである。一方右側（ステップＳ１０から
Ｓ１９）は半導体露光装置側の処理シーケンスである。
この両方の処理シーケンスがお互いに同期を取り通信し
ながら並行してシーケンスを遂行していくものである。The left side of the flowchart of FIG. 3 (step S
1 to S6) is a processing sequence on the side of the resist coating apparatus which is a pre-process apparatus. On the other hand, the right side (steps S10 to S19) is the processing sequence on the semiconductor exposure apparatus side.
Both of these processing sequences execute the sequences in parallel while communicating in synchronization with each other.
【００１８】先ず前工程装置であるレジスト塗布装置１
のスタート操作を待つ（ステップＳ１）。スタート操作
が行われるとレジスト塗布装置１は、半導体露光装置２
側からのウエハ搬入要求の受信待ちになる（ステップＳ
２）。ここで半導体露光装置２のスタート操作の待ち状
態（ステップＳ１０）からスタート操作が行われるとレ
ジスト塗布装置１に対してウエハ搬入要求（ウエハを貰
いたい）の送信をする（ステップＳ１１）。First, the resist coating apparatus 1 which is a pre-process apparatus
Wait for the start operation (step S1). When the start operation is performed, the resist coating apparatus 1 becomes the semiconductor exposure apparatus 2
Waits for a wafer loading request from the side (step S
2). Here, when the start operation is performed from the waiting state for the start operation of the semiconductor exposure apparatus 2 (step S10), a wafer carry-in request (to receive a wafer) is transmitted to the resist coating apparatus 1 (step S11).
【００１９】この通信を待っていたレジスト塗布装置１
はステップＳ２の待ちループを抜け次のステップに進
み、これから搬出するウエハの露光のための処理条件の
情報４０を半導体露光装置２に送信し（ステップＳ
３）、その後ウエハ搬送機構３を作動させてウエハ搬送
を開始させる（ステップＳ４）。Resist coating apparatus 1 waiting for this communication
Exits the waiting loop of step S2 and proceeds to the next step, and transmits information 40 of processing conditions for exposing a wafer to be unloaded to the semiconductor exposure apparatus 2 (step S2).
3) Then, the wafer transfer mechanism 3 is operated to start wafer transfer (step S4).
【００２０】一方、半導体露光装置２はステップＳ１１
後、ステップＳ３の露光のための処理条件の情報４０の
受信により待ちのループ（ステップＳ１２）を抜け、搬
送されてきつつあるウエハを受領すべくウエハ搬入部２
ａの動作を開始し（ステップＳ１３）、受領完了する迄
の待ちループに入る（ステップＳ１４）。受領が完了す
るとステップＳ１４を抜けウエハ搬入部２ａの動作を停
止させる（ステップ１５）。受領が完了したのでレジス
ト塗布装置１に対してウエハ搬入完了（受領完了）の送
信を行う（ステップＳ１６）。これにより、この通信の
受信待ちの状態（ステップＳ５）にあったレジスト塗布
装置１はこのステップＳ５を抜けウエハ搬送機構３の動
作を停止させ（ステップＳ６）、これにより一枚のウエ
ハ搬出を完了する。その後、次のウエハ搬出のためにス
テップＳ２のループに戻る。On the other hand, the semiconductor exposure apparatus 2 has a step S11.
After that, upon receipt of the processing condition information 40 for the exposure in step S3, the waiting loop (step S12) is exited, and the wafer carry-in section 2 receives the wafer being transferred.
The operation of a is started (step S13), and a waiting loop until the receipt is completed is entered (step S14). When the receipt is completed, the process exits step S14 and the operation of the wafer carry-in section 2a is stopped (step 15). Since the receipt is completed, the wafer loading completion (receipt completion) is transmitted to the resist coating apparatus 1 (step S16). As a result, the resist coating apparatus 1 in the state of waiting for reception of this communication (step S5) exits step S5 and stops the operation of the wafer transfer mechanism 3 (step S6), thereby completing the unloading of one wafer. To do. After that, the process returns to the loop of step S2 to carry out the next wafer.
【００２１】一方、半導体露光装置２はステップＳ１６
迄で一枚のウエハ受領を完了し、露光のための処理を開
始する。On the other hand, the semiconductor exposure apparatus 2 is step S16.
By then, the reception of one wafer is completed, and the process for exposure is started.
【００２２】先ず、装置内に予め収容されている複数の
マスクの中から、ステップＳ１２で受信した当該ウエハ
の露光のための処理条件の情報４０中の使用マスク名４
０−２で指定されたマスクを自動的にセットする（ステ
ップＳ１７）。First, from the plurality of masks previously stored in the apparatus, the mask name 4 used in the processing condition information 40 for the exposure of the wafer received in step S12.
The mask designated by 0-2 is automatically set (step S17).
【００２３】同様に、装置に内蔵されている磁気デイス
ク等に予め設定登録されている複数の露光ジョブ・ファ
イルの中から、４０−３で指定された露光ジョブ名の露
光ジョブ・ファイルのパラメータ群を読み込み、次に４
０−４で指定された露光時間分の露光を行う（ステップ
Ｓ１８）。Similarly, from the plurality of exposure job files preset and registered in the magnetic disk or the like built in the apparatus, the parameter group of the exposure job file having the exposure job name designated by 40-3 is set. Read, then 4
Exposure for the exposure time designated by 0-4 is performed (step S18).
【００２４】露光を完了したウエハは、後工程装置であ
る現像装置５に搬出される（ステップＳ１９）。以上で
レジスト塗布装置１から受領した一枚のウエハに対する
半導体露光装置２内での処理を全て完了し、次のウエハ
を受領すべくステップＳ１１へ戻る。以上説明してきた
処理ループ（ステップＳ２からＳ６およびステップＳ１
１からＳ１９）を繰り返すことにより、連続して複数の
ウエハに対して露光処理を行う。The exposed wafer is unloaded to the developing device 5 which is a post-process device (step S19). As described above, all the processes in the semiconductor exposure apparatus 2 for one wafer received from the resist coating apparatus 1 are completed, and the process returns to step S11 to receive the next wafer. The processing loop described above (steps S2 to S6 and step S1)
By repeating steps 1 to S19), exposure processing is continuously performed on a plurality of wafers.
【００２５】なお、上記実施例において、通信線は電気
的通信の場合で説明したが、光学的通信であってもよ
い。また、上記実施例では、前工程装置（レジスト塗布
装置）から半導体露光装置に対し、処理条件を切り換え
る場合で説明したが、半導体露光装置の処理結果を後工
程処理装置（現像装置）に通信することであってもよ
い。また、前・後工程装置の両方が一体化され、通信回
線も単回線を共用する方法になってもよい。In the above embodiment, the communication line has been described for electrical communication, but it may be optical communication. Further, in the above embodiment, the case where the processing conditions are switched from the pre-process apparatus (resist coating apparatus) to the semiconductor exposure apparatus has been described, but the processing result of the semiconductor exposure apparatus is communicated to the post-processing apparatus (developing apparatus). May be that. Further, both the front and back process devices may be integrated, and the communication line may be a single line.
【００２６】[0026]
【発明の効果】以上説明したように、ウエハ授受のため
の通信回線に、ウエハ授受の制御信号だけでなく、処理
条件の情報を付加することにより、通信回線を別に用意
することなく、処理条件を切り換えることが可能にな
る。As described above, by adding not only the wafer transfer control signal but also the processing condition information to the communication line for transferring the wafer, the processing condition can be obtained without separately preparing the communication line. Can be switched.
【図１】 本発明が適用される半導体露光装置を取り巻
く自動化ラインの実施例を示すブロック図である。FIG. 1 is a block diagram showing an embodiment of an automated line surrounding a semiconductor exposure apparatus to which the present invention is applied.
【図２】 本発明に係わる半導体製造装置で用いられる
露光条件のデータ内容例である。FIG. 2 is an example of data contents of exposure conditions used in the semiconductor manufacturing apparatus according to the present invention.
【図３】 レジスト塗布装置から半導体露光装置にウエ
ハが搬送される時の双方間の動作およびその後の半導体
露光装置の動作を示すフローチャートである。FIG. 3 is a flowchart showing an operation between the two when the wafer is transferred from the resist coating apparatus to the semiconductor exposure apparatus and the operation of the semiconductor exposure apparatus thereafter.
１；レジスト塗布装置、１ａ；レジスト塗布装置のウエ
ハ搬出部、２；半導体露光装置、２ａ；半導体露光装置
のウエハ搬入部、２ｂ；半導体露光装置のウエハ搬出
部、３；ウエハ搬送機構、４；通信線、５；現像装置、
５ａ；現像装置のウエハ搬入部、６；ウエハ搬送機構、
７；通信線、４０；露光条件のデータ内容、４０−１；
識別制御コード、４０−２；使用マスク名、４０−３；
露光ジョブ名、４０−４；露光時間1; resist coating apparatus, 1a; wafer unloading section of resist coating apparatus, 2; semiconductor exposure apparatus, 2a; wafer loading section of semiconductor exposure apparatus, 2b; wafer unloading section of semiconductor exposure apparatus, 3; wafer transfer mechanism, 4; Communication line, 5; developing device,
5a: wafer loading section of developing device, 6: wafer transfer mechanism,
7; communication line, 40; data content of exposure condition, 40-1;
Identification control code, 40-2; mask name used, 40-3;
Exposure job name, 40-4; exposure time
Claims (4)
よび露光後工程処理装置とをそれぞれウエハ搬送機構を
介して連結し、前記半導体露光装置と前記露光前および
露光後工程処理装置の各々とを動作制御用通信回線で接
続した半導体製造装置において、前記通信回線は、ウエ
ハ受け渡しの制御信号およびウエハ処理条件情報信号を
同時に通信可能であることを特徴とする半導体製造装
置。1. A semiconductor exposure apparatus, a pre-exposure step processing apparatus, and a post-exposure step processing apparatus are connected to each other via a wafer transfer mechanism, and the semiconductor exposure apparatus and each of the pre-exposure and post-exposure step processing apparatuses are connected. A semiconductor manufacturing apparatus connected by an operation control communication line, wherein the communication line can simultaneously communicate a wafer transfer control signal and a wafer processing condition information signal.
ら露光装置に対し露光条件情報を通信可能であることを
特徴とする請求項１の半導体製造装置。2. The semiconductor manufacturing apparatus according to claim 1, wherein the communication line is capable of communicating exposure condition information from the pre-exposure process processing apparatus to the exposure apparatus.
程処理装置に対し露光処理結果情報を通信可能であるこ
とを特徴とする請求項１の半導体製造装置。3. The semiconductor manufacturing apparatus according to claim 1, wherein the communication line is capable of communicating the exposure processing result information from the exposure apparatus to the post-exposure process processing apparatus.
それぞれレジスト塗布装置および現像装置であることを
特徴とする請求項１の半導体製造装置。4. The semiconductor manufacturing apparatus according to claim 1, wherein the pre-exposure process and post-process processing devices are a resist coating device and a developing device, respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3248519A JP2877998B2 (en) | 1991-09-03 | 1991-09-03 | Semiconductor manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3248519A JP2877998B2 (en) | 1991-09-03 | 1991-09-03 | Semiconductor manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0562873A true JPH0562873A (en) | 1993-03-12 |
| JP2877998B2 JP2877998B2 (en) | 1999-04-05 |
Family
ID=17179397
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3248519A Expired - Fee Related JP2877998B2 (en) | 1991-09-03 | 1991-09-03 | Semiconductor manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2877998B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6185474B1 (en) | 1997-03-04 | 2001-02-06 | Canon Kabushiki Kaisha | Exposure unit, exposure system and device manufacturing method |
| US6282457B1 (en) | 1996-06-07 | 2001-08-28 | Tokyo Electron Limited | Device for controlling treating station |
| JP2002289501A (en) * | 2001-03-27 | 2002-10-04 | Tokyo Electron Ltd | Processor |
| WO2004086469A1 (en) * | 2003-03-04 | 2004-10-07 | Tokyo Electron Limited | Inline connection setting method and device and substrate processing device and substrate processing system |
| US7031364B2 (en) * | 1997-10-03 | 2006-04-18 | Canon Kabushiki Kaisha | Gas laser device and exposure apparatus using the same |
| JP2008078681A (en) * | 2001-03-09 | 2008-04-03 | Tokyo Electron Ltd | Treatment device |
| JP2008124482A (en) * | 2007-11-27 | 2008-05-29 | Tokyo Electron Ltd | Processor |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003142376A (en) | 2001-11-02 | 2003-05-16 | Canon Inc | Lithographic system, aligner, method of controlling them, and method of manufacturing device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62296519A (en) * | 1986-06-17 | 1987-12-23 | Dainippon Screen Mfg Co Ltd | Control system for spinner unit |
-
1991
- 1991-09-03 JP JP3248519A patent/JP2877998B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62296519A (en) * | 1986-06-17 | 1987-12-23 | Dainippon Screen Mfg Co Ltd | Control system for spinner unit |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6282457B1 (en) | 1996-06-07 | 2001-08-28 | Tokyo Electron Limited | Device for controlling treating station |
| US6185474B1 (en) | 1997-03-04 | 2001-02-06 | Canon Kabushiki Kaisha | Exposure unit, exposure system and device manufacturing method |
| US7031364B2 (en) * | 1997-10-03 | 2006-04-18 | Canon Kabushiki Kaisha | Gas laser device and exposure apparatus using the same |
| JP2008078681A (en) * | 2001-03-09 | 2008-04-03 | Tokyo Electron Ltd | Treatment device |
| JP2002289501A (en) * | 2001-03-27 | 2002-10-04 | Tokyo Electron Ltd | Processor |
| JP4619562B2 (en) * | 2001-03-27 | 2011-01-26 | 東京エレクトロン株式会社 | Processing equipment |
| WO2004086469A1 (en) * | 2003-03-04 | 2004-10-07 | Tokyo Electron Limited | Inline connection setting method and device and substrate processing device and substrate processing system |
| US7167769B2 (en) | 2003-03-04 | 2007-01-23 | Tokyo Electron Limited | Inline connection setting method and device and substrate processing devices and substrate processing system |
| CN100442470C (en) * | 2003-03-04 | 2008-12-10 | 东京毅力科创株式会社 | Inline connection setting method and device and substrate processing devices and substrate processing system |
| JP2008124482A (en) * | 2007-11-27 | 2008-05-29 | Tokyo Electron Ltd | Processor |
| JP4643630B2 (en) * | 2007-11-27 | 2011-03-02 | 東京エレクトロン株式会社 | Processing equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2877998B2 (en) | 1999-04-05 |
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