JPH05235154A - Wafer holding device - Google Patents
Wafer holding deviceInfo
- Publication number
- JPH05235154A JPH05235154A JP3622392A JP3622392A JPH05235154A JP H05235154 A JPH05235154 A JP H05235154A JP 3622392 A JP3622392 A JP 3622392A JP 3622392 A JP3622392 A JP 3622392A JP H05235154 A JPH05235154 A JP H05235154A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- tray
- gripping
- contact
- movable claw
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、半導体装置の製造装
置に用いられるウエハ把持装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer gripping device used in a semiconductor device manufacturing apparatus.
【０００２】[0002]
【従来の技術】通常、半導体装置は、ウエハ上への成
膜、写真製版、エッチング、あるいは洗浄等の基本プロ
セスを繰り返すことによって製造される。これらのプロ
セスを行う半導体製造装置は、ウエハを複数枚収納した
カセット単位で処理を行うバッチ処理装置と、ウエハを
一枚毎に処理する枚葉処理装置とに分類される。上記処
理装置のうち枚葉処理装置は、ウエハをローダ部から反
応室へ搬送する手段として、ベルトによる搬送、真空吸
着による搬送、または把持による搬送などの手段が用い
られている。図３及び図４は、従来の把持による搬送に
用いられるウエハ把持装置を示す図であり、図３はウエ
ハ把持装置の平面図、図４はウエハ把持装置を断面で示
す正面図である。図において、１はウエハ、２はウエハ
１を載せるトレイ、３はトレイ２の端部に構成されウエ
ハ１の端面と当接する当接部、４はトレイ２のウエハ１
が載置される面と接触し、摺動可能に配置された可動爪
で、先端にウエハ１と接触する当接面４ａを備えてい
る。ここで、上記トレイ２と上記可動爪４は、それぞれ
素材にアルミニュームが用いられ、表面に硬質アルマイ
ト処理が施されている。2. Description of the Related Art Generally, a semiconductor device is manufactured by repeating a basic process such as film formation on a wafer, photolithography, etching, or cleaning. Semiconductor manufacturing apparatuses that perform these processes are classified into a batch processing apparatus that performs processing in units of cassettes that store a plurality of wafers and a single-wafer processing apparatus that processes each wafer. In the single-wafer processing apparatus among the above processing apparatuses, as a means for transferring the wafer from the loader section to the reaction chamber, a means such as a belt transfer, a vacuum suction transfer, or a grip transfer is used. FIG. 3 and FIG. 4 are views showing a wafer gripping device used for conventional transfer by gripping, FIG. 3 is a plan view of the wafer gripping device, and FIG. 4 is a front view showing the wafer gripping device in cross section. In the figure, 1 is a wafer, 2 is a tray on which the wafer 1 is placed, 3 is an abutting portion which is formed at an end of the tray 2 and comes into contact with an end surface of the wafer 1, and 4 is a wafer 1 of the tray 2.
Is a movable claw which is in contact with the surface on which is mounted and is slidably arranged, and has a contact surface 4a at the tip which contacts the wafer 1. Here, the tray 2 and the movable claw 4 are made of aluminum, respectively, and their surfaces are subjected to hard alumite treatment.
【０００３】次に動作について説明する。ウエハ１はト
レイ２上に置かれ、ウエハ１の径方向の一端は当接部３
と当接されている。可動爪４はウエハ１と接離可能に動
作され、ウエハ１の他端と当接面４ａとを当接させる。
このように、ウエハ１の一端と当接したトレイ２の当接
部３と、ウエハ１の他端と当接した可動爪３の当接部５
とで、ウエハ１が把持される。Next, the operation will be described. The wafer 1 is placed on the tray 2, and one end of the wafer 1 in the radial direction is a contact portion 3.
Is abutted with. The movable claw 4 is operated so as to be able to come into contact with and separate from the wafer 1, and brings the other end of the wafer 1 into contact with the contact surface 4a.
In this way, the contact portion 3 of the tray 2 that contacts one end of the wafer 1 and the contact portion 5 of the movable claw 3 that contacts the other end of the wafer 1.
With, the wafer 1 is gripped.
【０００４】[0004]
【発明が解決しようとする課題】従来のウエハ把持装置
は以上のように構成されているので、ウエハ１と接触す
るトレイ２の当接部３と可動爪４の当接部５から塵が発
生し、この塵が半導体装置に悪影響を与え、半導体装置
の歩留まりの向上が困難であるという問題点があった。Since the conventional wafer gripping device is constructed as described above, dust is generated from the contact portion 3 of the tray 2 and the contact portion 5 of the movable claw 4 which come into contact with the wafer 1. However, there is a problem that this dust adversely affects the semiconductor device and it is difficult to improve the yield of the semiconductor device.
【０００５】この発明は上記のような問題点を解消する
ためになされたもので、塵の発生のないウエハ把持装置
を得ることを目的とする。The present invention has been made to solve the above-mentioned problems, and an object thereof is to obtain a wafer gripping device which does not generate dust.
【０００６】[0006]
【課題を解決するための手段】この発明に係わるウエハ
把持装置は、ウエハとの親和性が小さく、硬度がウエハ
の硬度より高い硬度を有し、ウエハと当接してウエハを
把持する面の面粗度がウエハの面粗度より小さく構成さ
れた把持部材をトレイの当接部と可動爪のウエハと接触
する部分に配置したものである。A wafer gripping apparatus according to the present invention has a low affinity for a wafer, a hardness higher than that of the wafer, and a surface for holding the wafer by abutting the wafer. A gripping member having a roughness smaller than the surface roughness of the wafer is arranged at the contact portion of the tray and the portion of the movable claw that contacts the wafer.
【０００７】[0007]
【作用】この発明によるウエハ把持装置のトレイの当接
部と可動爪とは、塵を発生しないようにウエハを把持す
る。The abutting portion of the tray and the movable claw of the wafer holding apparatus according to the present invention holds the wafer so as not to generate dust.
【０００８】[0008]
【実施例】実施例１ 以下、この発明の実施例１を図について説明する。図１
および図３はこの発明の実施例１によるウエハ把持装置
を示す図であり、図１はウエハ把持装置の平面図、図２
はウエハ把持装置を断面で示す正面図、図３はウエハの
端面と接触してウエハを把持する把持部材の取り付けを
示す図である。図１〜図３において、１はウエハ、５は
ウエハ１が載置されるトレイで、端部にウエハ１と接触
する後述の把持部材７の取り付け部５ａが形成されてい
る。６はトレイ５上を摺動可能に配置された可動爪で、
ウエハ１と接触する後述の把持部材７の取り付け部６ａ
が形成されている。７はトレイ５と可動爪６とのそれぞ
れの取り付け部５ａと６ａとに、ねじなどの取り付け部
材で取り付けられた把持部材である。ここで、この発明
の実施例１に用いる各要素の諸元について説明する。ウ
エハ１は、硬度がビッカース硬度で１０００ｋｇ／ｃｍ
２、ウエハ端面の面粗度はＲａ＝０．１μｍである。把
持部材７は、ジルコニアで形成され、ウエハ１との親和
性が小さく、硬度がビッカース硬度で１１５０ｋｇ／ｃ
ｍ２、ウエハ１を把持する面７ａの面粗度は０．０１μ
ｍである。Embodiment 1 Hereinafter, Embodiment 1 of the present invention will be described with reference to the drawings. Figure 1
3 is a diagram showing a wafer gripping device according to Embodiment 1 of the present invention. FIG. 1 is a plan view of the wafer gripping device, and FIG.
FIG. 3 is a front view showing the wafer gripping device in a cross section, and FIG. 3 is a view showing the attachment of a gripping member that contacts the end surface of the wafer and grips the wafer. 1 to 3, reference numeral 1 is a wafer, 5 is a tray on which the wafer 1 is placed, and an attaching portion 5a of a gripping member 7 which will be described later and is in contact with the wafer 1 is formed at an end portion thereof. 6 is a movable claw slidably arranged on the tray 5,
An attachment portion 6a of a gripping member 7, which will be described later, that contacts the wafer 1.
Are formed. Reference numeral 7 is a gripping member that is attached to the attachment portions 5a and 6a of the tray 5 and the movable claw 6 with attachment members such as screws. Here, specifications of each element used in the first embodiment of the present invention will be described. The wafer 1 has a Vickers hardness of 1000 kg / cm.
2. The surface roughness of the wafer end surface is Ra = 0.1 μm. The gripping member 7 is made of zirconia, has a low affinity with the wafer 1, and has a Vickers hardness of 1150 kg / c.
m2, the surface roughness of the surface 7a that holds the wafer 1 is 0.01 μm
m.
【０００９】次に、動作、及び動作後の塵の測定結果に
ついて説明する。図１において、可動爪６をウエハ１と
接離するように動作させ、最大５００ｇの荷重でウエハ
１を把持する把持動作を、１秒間隔で４２０秒間行った
後、ウエハ１を垂直にしてアルコール蒸気雰囲気中に曝
し、ウエハ１の端面に付着した塵を流し落とし、このよ
うにして採取した塵を、レーザ式表面異物検査装置によ
って測定した。上記測定の結果、把持部材７と接触した
個所から流れた塵は観察されなかった。Next, the operation and the dust measurement result after the operation will be described. In FIG. 1, the movable claw 6 is operated so as to be brought into contact with and separated from the wafer 1, and a gripping operation for gripping the wafer 1 with a maximum load of 500 g is performed at an interval of 1 second for 420 seconds. The dust adhering to the end surface of the wafer 1 was flown off by exposing it to a vapor atmosphere, and the dust thus collected was measured by a laser-type surface foreign matter inspection device. As a result of the above measurement, no dust was observed to flow from the portion in contact with the grip member 7.
【００１０】上記実施例１によるウエハ把持装置と従来
のウエハ把持装置との、各要素と、測定結果とを比較し
た値を表１に示す。Table 1 shows the values obtained by comparing the measurement results with the respective elements of the wafer gripping device according to the first embodiment and the conventional wafer gripping device.
【００１１】[0011]
【表１】 [Table 1]
【００１２】実施例２ 実施例１においては、ウエハ１と接触する把持部材７を
ジルコニアで構成したが、素材はウエハ１との親和性が
小さく、硬度（ビッカース）がウエハの硬度（ビッカー
ス）より高ければよい。Second Embodiment In the first embodiment, the gripping member 7 that contacts the wafer 1 is made of zirconia. However, the material has a low affinity for the wafer 1 and the hardness (Vickers) is higher than the hardness (Vickers) of the wafer. It should be high.
【００１３】実施例３ 実施例１においては、機械的にウエハを把持する場合に
ついて説明したが、機械的な把持に限らず、真空吸着等
の他の把持手段においても、ウエハとの接触部にジルコ
ニアを用いてもよい。Third Embodiment In the first embodiment, the case where the wafer is mechanically gripped has been described. However, not only mechanical gripping, but also other gripping means such as vacuum suction, the contact portion with the wafer is not affected. Zirconia may be used.
【００１４】実施例４ 実施例１においては、把持部材は分割したものを用いた
が、把持部材は一体に形成してもよい。Fourth Embodiment In the first embodiment, the holding member is divided, but the holding member may be formed integrally.
【００１５】[0015]
【発明の効果】以上のようにこの発明によれば、ウエハ
との親和性が小さく、硬度がウエハの硬度より高い硬度
を有し、ウエハとの当接しウエハを支持する面の面粗度
がウエハの面粗度より小さく構成された把持部材をトレ
イと可動爪とがウエハと接触する部分に配置したので、
ウエハ把持動作を繰り返しても、塵の発生のないウエハ
把持装置を得ることができる。As described above, according to the present invention, the affinity with the wafer is small, the hardness is higher than the hardness of the wafer, and the surface roughness of the surface that contacts the wafer and supports the wafer is high. Since the gripping member configured to be smaller than the surface roughness of the wafer is arranged at the portion where the tray and the movable claw are in contact with the wafer,
Even if the wafer gripping operation is repeated, it is possible to obtain a wafer gripping device that does not generate dust.
【図１】この発明の実施例１によるウエハ把持装置を示
す平面図である。FIG. 1 is a plan view showing a wafer gripping device according to a first embodiment of the present invention.
【図２】図１におけるウエハ把持装置を示す断面図であ
る。FIG. 2 is a cross-sectional view showing the wafer gripping device in FIG.
【図３】図１におけるウエハ把持装置の主要部を形成す
る把持部材の取り付けを示す斜視図である。3 is a perspective view showing the attachment of a holding member forming a main part of the wafer holding apparatus in FIG.
【図４】従来のウエハ把持装置を示す平面図である。FIG. 4 is a plan view showing a conventional wafer gripping device.
【図５】図４におけるウエハ把持装置を示す断面図であ
る。5 is a cross-sectional view showing the wafer gripping device in FIG.
１ ウエハ ５ トレイ ６ 可動爪 ７ 把持部材 1 wafer 5 tray 6 movable claw 7 gripping member
Claims (2)
の当接部と上記トレイを摺動可能な可動爪で把持するウ
エハ把持装置において、上記ウエハとの親和性が小さ
く、硬度が上記ウエハの硬度より高い硬度を有し、上記
ウエハと当接する面の面粗度が上記ウエハの端面の面粗
度より小さく構成された把持部材を上記トレイの当接部
と上記可動爪との上記ウエハと接触する部分に配置した
ことを特徴とするウエハ把持装置。1. A wafer gripping device for gripping a wafer placed on a tray with an abutting portion of the tray and a movable claw capable of sliding the tray, wherein the wafer has a low affinity with the wafer and a hardness of the wafer. A gripping member having a hardness higher than the hardness and having a surface roughness of a surface contacting with the wafer smaller than a surface roughness of an end surface of the wafer is provided on the wafer of the contact portion of the tray and the movable claw. A wafer gripping device, which is arranged in a contacting portion.
特徴とする請求項１記載のウエハ把持装置。2. The wafer gripping apparatus according to claim 1, wherein the gripping member is made of zirconia.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3622392A JPH05235154A (en) | 1992-02-24 | 1992-02-24 | Wafer holding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3622392A JPH05235154A (en) | 1992-02-24 | 1992-02-24 | Wafer holding device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05235154A true JPH05235154A (en) | 1993-09-10 |
Family
ID=12463782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3622392A Pending JPH05235154A (en) | 1992-02-24 | 1992-02-24 | Wafer holding device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05235154A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0220041A (en) * | 1988-05-25 | 1990-01-23 | American Teleph & Telegr Co <Att> | Method and apparatus for retaining semiconductor wafer |
| JPH0226246B2 (en) * | 1981-08-08 | 1990-06-08 | Fujitsu Ltd | |
| JPH0260247B2 (en) * | 1984-07-31 | 1990-12-14 | Shimazu Seisakusho Kk | |
| JPH03273663A (en) * | 1990-03-23 | 1991-12-04 | Canon Inc | Substrate holder |
-
1992
- 1992-02-24 JP JP3622392A patent/JPH05235154A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0226246B2 (en) * | 1981-08-08 | 1990-06-08 | Fujitsu Ltd | |
| JPH0260247B2 (en) * | 1984-07-31 | 1990-12-14 | Shimazu Seisakusho Kk | |
| JPH0220041A (en) * | 1988-05-25 | 1990-01-23 | American Teleph & Telegr Co <Att> | Method and apparatus for retaining semiconductor wafer |
| JPH03273663A (en) * | 1990-03-23 | 1991-12-04 | Canon Inc | Substrate holder |
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