JPH05214533A - Burning flame-type cvd diamond deposition process aided by microwave or alternating current/direct current discharge - Google Patents
Burning flame-type cvd diamond deposition process aided by microwave or alternating current/direct current dischargeInfo
- Publication number
- JPH05214533A JPH05214533A JP4282115A JP28211592A JPH05214533A JP H05214533 A JPH05214533 A JP H05214533A JP 4282115 A JP4282115 A JP 4282115A JP 28211592 A JP28211592 A JP 28211592A JP H05214533 A JPH05214533 A JP H05214533A
- Authority
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- Prior art keywords
- combustion flame
- discharge
- diamond
- cvd
- microwave
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-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/25—Diamond
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Combustion & Propulsion (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、燃焼炎(combustion fl
ame)技術を用いてダイヤモンドを製造する化学蒸着（Ｃ
ＶＤ）法に関し、より詳細には、斯かる技術の炭素利用
割合(utilization rate)を改善する方法に関する。BACKGROUND OF THE INVENTION The present invention relates to combustion flames.
chemical vapor deposition (C
VD) method, and more particularly to a method for improving the carbon utilization rate of such technology.
【０００２】[0002]
【従来の技術】ダイヤモンドの種々の特性の内の硬度特
性及び熱的特性に依り、ダイヤモンドは種々の工業要素
として有用である。先ず、天然ダイヤモンドは種々の研
磨用途に用いられてきた。又、ダイヤモンドの合成は、
ダイヤモンドが熱的に安定な炭素相である条件下におい
て触媒／焼結助剤を活用する高圧／高温技術により行な
われ、これにより、更に多くの種類のダイヤモンド製品
が市場で好評を博している。この点、多くの場合に於い
て円筒状乃至環状の炭化タングステン支持体により支持
される多結晶質のダイヤモンド成形体(compact) は、ダ
イヤモンド製品の限界を更に広げてきた。しかし乍ら、
高圧及び高温の要件は、例えば製品の形状を制限するも
のであった。BACKGROUND OF THE INVENTION Due to the hardness and thermal properties of diamond's various properties, diamond is useful as a variety of industrial factors. First, natural diamond has been used for various polishing applications. Moreover, the synthesis of diamond is
Performed by high pressure / high temperature technology that utilizes catalyst / sintering aids under conditions where diamond is a thermally stable carbon phase, which makes more types of diamond products popular in the market .. In this regard, polycrystalline diamond compacts, often supported by cylindrical or annular tungsten carbide supports, have further extended the limits of diamond products. However,
High pressure and high temperature requirements have limited product shape, for example.
【０００３】最近、ダイヤモンドが準安定な低圧でダイ
ヤモンド成長を行うという工業的試みが相当に行なわれ
ている。と言うのも、低圧合成技術によりダイヤモンド
製造を行ない得ることは数十年も前から知られていた
が、成長速度が極めて低い等の欠点に依り、商業的には
広く受入れられなかった。ところが、最近では、成長速
度が一層高められて来たことから、この分野に対する工
業的関心が高まったのである。更に、斯かる最近の努力
の成果として、”ダイヤモンド状”炭素及び炭化水素
（ＤＬＣ膜）として知られる、完全に新しい種類の固体
が発見されている。尚、ＣＶＤ方法に関する更なる詳細
は、Angus et al の"Low-Pressure,Metastable Growth
of Diamond and ´Diamondlike´ Phases",Science, vo
l.241, 第９１３頁〜９２１頁、及び、Bachmann et al
の"Diamond Thin Films",Chemical and Engineering Ne
ws, 第２４〜３９頁(May 15,1989) に見ることが出来
る。In recent years, considerable industrial efforts have been made to carry out diamond growth at low pressure where diamond is metastable. Although it has been known for decades that diamond can be produced by the low-pressure synthesis technique, it has not been widely accepted commercially because of defects such as extremely low growth rate. However, recently, as the growth rate has been further increased, industrial interest in this field has increased. Moreover, as a result of such recent efforts, a completely new class of solids, known as "diamond-like" carbons and hydrocarbons (DLC films), has been discovered. For more details on the CVD method, see "Low-Pressure, Metastable Growth" by Angus et al.
of Diamond and ´Diamondlike´ Phases ", Science, vo
l.241, pages 913-921 and Bachmann et al.
"Diamond Thin Films", Chemical and Engineering Ne
ws, pages 24-39 (May 15, 1989).
【０００４】この分野に於いてダイヤモンドの低圧成長
は”化学蒸着”或いは”ＣＶＤ”と呼称されて来た。文
献において適切とされたのは２つの優れたＣＶＤ技術で
ある。そのひとつは、（典型的にはメタンである）炭化
水素ガスと水素ガスとの希薄混合物を用い、通常的には
炭化水素の含有量を合計体積流の略０．１％〜２．５％
の間で変化せしめる技術であり、上記混合ガスは、高温
タングステンフィラメントの直上に配置された石英管を
介して導入されており、上記タングステンフィラメント
は電気的に約１，７５０℃〜２，４００℃に加熱されて
いる。この高温フィラメントの表面上で上記混合ガスは
解離し、該フィラメントの直下に載置されて加熱された
基体上にダイヤモンドが凝縮する。上記基体は、抵抗加
熱された（モリブデンであることが多い）舟形容器内に
保持されるとともに、約５００℃〜１，１００℃に加熱
される。Low pressure growth of diamond has been referred to in the art as "chemical vapor deposition" or "CVD". Appropriate in the literature are two good CVD techniques. One is to use a dilute mixture of hydrocarbon gas (typically methane) and hydrogen gas, usually with a hydrocarbon content of approximately 0.1% to 2.5% of the total volume flow.
The mixed gas is introduced through a quartz tube arranged directly above the high temperature tungsten filament, and the tungsten filament is electrically heated to about 1,750 ° C to 2,400 ° C. Is heated to. The mixed gas is dissociated on the surface of the high temperature filament, and the diamond is condensed on the substrate placed directly under the filament and heated. The substrate is held in a resistance-heated (often molybdenum) boat and heated to about 500 ° C to 1100 ° C.
【０００５】[0005]
【発明が解決しようとする課題】もうひとつの技術は、
上記フィラメントにプラズマ放電を印加する技術であ
る。プラズマ放電は核生成密度及び成長速度を増大する
ものであり、又、ダイヤモンドの分離粒子よりも”膜”
の形成を増大せしめるものと考えられている。この領域
で用いられてきたプラズマシステムには、３種類の基本
的システムが在る。第１のものはマイクロ波によるプラ
ズマシステムであり、第２のものは（誘電的に或いは静
電容量的に結合された）ＲＦプラズマシステムであり、
第３のものは直流プラズマシステムである。これらの
内、ＲＦプラズマシステム及びマイクロ波プラズマシス
テムは比較的に複雑で高価な設備を使用しており、斯か
る設備は、電気エネルギを結合してプラズマを発生する
為に複雑なチューニング或いは回路網の整合を要するの
が普通である。更に、両技術のいずれにおいても、ダイ
ヤモンド成長速度は極めて小さいものである。Another technique is
This is a technique of applying plasma discharge to the filament. Plasma discharge increases nucleation density and growth rate, and is a "film" rather than discrete particles of diamond.
Is believed to increase the formation of. There are three basic types of plasma system used in this area. The first is a microwave plasma system, the second is an RF plasma system (dielectrically or capacitively coupled),
The third is a DC plasma system. Among them, the RF plasma system and the microwave plasma system use relatively complicated and expensive equipment, which requires complicated tuning or network for combining electric energy to generate plasma. It is common to require the matching of. Furthermore, the diamond growth rate in both of these techniques is extremely low.
【０００６】一方、上記の内の第３のものは文献により
評価されておらず、又、酸素の存在下で、炭化水素／水
素の気体状混合物から燃焼炎(combustion flame)を発生
させるものである。この技術の欠点は、炭素の利用率(u
tilization rate)が極めて低い（０．０１％）ことであ
る。但し、この様に利用率が低いことから、炭素利用率
を僅かでも改善すれば（例えば、僅か１％まで高めたと
しても）、燃焼炎式方法の操作費用及び投資費用は２桁
（即ち百倍）も減少されることになり、従って、その様
に燃焼炎式方法が改変されたとすれば、例えば炭素利用
率が約３０％の高温フィラメント式方法とも経済面で競
合し得ることとなる。On the other hand, the third of the above has not been evaluated in the literature and is one which produces combustion flames from gaseous hydrocarbon / hydrogen mixtures in the presence of oxygen. is there. The drawback of this technique is that the utilization rate of carbon (u
The tilization rate is extremely low (0.01%). However, due to such low utilization, even if the carbon utilization is improved even slightly (for example, even if it is increased to only 1%), the operation cost and investment cost of the combustion flame method are two digits (ie, 100 times higher). ) Would also be reduced, and thus such a modification of the combustion flame process would be economically competitive with the hot filament process, which has a carbon utilization of about 30%, for example.
【０００７】[0007]
【課題を解決するための手段】広範囲に述べれば、本発
明は、酸素の存在下で炭化水素／水素のガス状混合物を
燃焼炎に供し、該ガス状混合物を少なくとも部分的に分
解してＣＶＤダイヤモンドを形成するというＣＶＤダイ
ヤモンド合成方法を改良する。斯かる合成方法の改良点
としては、上記燃焼炎に、誘電加熱、直流放電、或い
は、交流放電の内のひとつ或いはそれ以上のものを加え
る段階を備えて成る。誘電加熱は、燃焼炎をマイクロ波
（ＭＷ）周波数の放電或いは無線周波数（ＲＦ）放電を
加えることにより達成される。燃焼炎に対し、誘電加熱
或いは直流／交流放電によるプラズマ発生を重畳印加す
ることにより、燃焼炎式方法における炭素利用率は相当
に改善される。上述の如く、燃焼炎技術における炭素の
低利用率に鑑みれば、炭素利用率の僅かな向上が、該技
術によるＣＶＤダイヤモンド生成における相当の費用節
約に繋がる。Broadly stated, the present invention involves subjecting a gaseous hydrocarbon / hydrogen mixture to a combustion flame in the presence of oxygen to at least partially decompose the gaseous mixture to form a CVD. Improves the CVD diamond synthesis method of forming diamond. An improvement of such a synthesis method comprises the step of adding to the combustion flame one or more of dielectric heating, DC discharge or AC discharge. Dielectric heating is achieved by applying a combustion flame to a microwave (MW) frequency discharge or a radio frequency (RF) discharge. By superimposing the plasma generation by dielectric heating or DC / AC discharge on the combustion flame, the carbon utilization in the combustion flame method is considerably improved. As mentioned above, given the low utilization of carbon in combustion flame technology, a slight improvement in carbon utilization leads to considerable cost savings in CVD diamond production by the technology.
【０００８】[0008]
【実施例】燃焼炎の炎端にはイオン化されたプラズマが
存在することから、電界は該プラズマと結合して該プラ
ズマにエネルギを供給する。斯かる電界は、マイクロ
波、ＲＦ、或いは、直流電源により発生され得る。斯か
るエネルギ源により燃焼炎工程を補助することにより、
燃焼炎の温度を下げること無く、該燃焼炎の気体供給中
心に更に多くの水素及び炭化水素が付加される。もし１
〜２％だけ多い炭化水素が付加されてダイヤモンドに変
換されるとすれば、燃焼炎工程における炭素の利用率は
量的に数桁の増大を見る。DETAILED DESCRIPTION OF THE INVENTION Since there is an ionized plasma at the flame tip of a combustion flame, an electric field combines with the plasma to provide energy to the plasma. Such electric field can be generated by microwave, RF, or DC power supply. By assisting the combustion flame process with such an energy source,
More hydrogen and hydrocarbons are added to the gas supply center of the combustion flame without lowering the temperature of the combustion flame. If 1
Given the addition of ~ 2% more hydrocarbons to convert to diamond, the utilization of carbon in the combustion flame process sees a quantitative increase of several orders of magnitude.
【０００９】蒸気相によるダイヤモンド合成の為の燃焼
炎技術の代表的なものが、米国特許第４，９３８，９４
０号及び第４，９８１，６７１号（援用する）に示され
ている。当業者が熟知している様に、炭化水素／水素の
気体状混合物は制御された量の酸素の存在下で燃焼炎に
供され、これにより気体状混合物は少なくとも部分的に
解離され、約５００℃〜１１００℃のＣＶＤダイヤモン
ド形成温度に保たれた基体上にダイヤモンドが成長／析
出する。しかし乍ら、上述の如く、その様な燃焼炎工程
における炭素利用率は極めて低い。A representative combustion flame technique for vapor phase diamond synthesis is US Pat. No. 4,938,94.
0 and 4,981,671 (incorporated by reference). As is well known to those skilled in the art, a hydrocarbon / hydrogen gaseous mixture is subjected to a combustion flame in the presence of a controlled amount of oxygen, whereby the gaseous mixture is at least partially dissociated, about 500 Diamond grows / precipitates on a substrate maintained at a CVD diamond forming temperature of between 1 ° C and 1100 ° C. However, as described above, the carbon utilization rate in such a combustion flame process is extremely low.
【００１０】燃焼炎工程に於ける炭素利用率を増大せし
めるべく、誘電加熱或いは電気的放電補助を行なった。
図１を参照するに、基体１４上にＣＶＤダイヤモンドを
成長／析出させる為に、トーチ(torch) １２から燃焼炎
１０が発生される。マイクロ波発生器１６は、マイクロ
波範囲の周波数を発生するマイクロ波送出器及び適宜な
アンテナから構成される。適切な形状とされた導波管１
７は、習用の手法により、マイクロ波周波数の電磁波を
自信の丈に沿って伝播する。該電磁波は、燃焼炎１０と
交差すると共に該燃焼炎に作用し、炭素利用率を改善せ
しめる。Dielectric heating or electrical discharge assistance was used to increase the carbon utilization in the combustion flame process.
Referring to FIG. 1, a combustion flame 10 is generated from a torch 12 for growing / depositing CVD diamond on a substrate 14. The microwave generator 16 includes a microwave transmitter that generates frequencies in the microwave range and an appropriate antenna. Waveguide 1 with proper shape
7 propagates an electromagnetic wave of microwave frequency along the length of self-confidence by a conventional method. The electromagnetic waves intersect with the combustion flame 10 and act on the combustion flame 10 to improve the carbon utilization rate.
【００１１】次に図２を参照するに、送出器１８はＲＦ
範囲の電磁波を発生すると共に、導線２２及び２４を介
し、アンテナの役割を果たすコイル２０に接続されてい
る。ここでも、炭素利用率を改善すべく、燃焼炎１０に
ＲＦ周波数の電磁波が重畳印加されている。図３はＲＦ
発生器の代替実施例を示すものであり、送出器１８には
導線２８により環状アンテナ２６が接続され、基体１４
は導線３０により送出器１８に接続されている。Referring now to FIG. 2, the transmitter 18 is RF
The electromagnetic wave of the range is generated, and it is connected to the coil 20 which functions as an antenna through the conductors 22 and 24. Here, too, electromagnetic waves of RF frequency are superimposed and applied to the combustion flame 10 in order to improve the carbon utilization rate. Figure 3 is RF
7 shows an alternative embodiment of the generator, in which the transmitter 18 is connected to an annular antenna 26 by a conductor 28,
Is connected to the sender 18 by a conductor 30.
【００１２】最後に、図４Ａ及び図４Ｂは、電気放電に
より補助された燃焼炎の２つの装置構成を夫々示してい
る。図４Ａに関し、電極３２及び３４は、夫々、導線３
６及び３８を介して電源４０に接続されている。図４Ｂ
に於いては、トーチ１２は導線４０を介して電源４０に
接続され、且つ、基体１４は導線４４を介して電源４０
に接続されている。Finally, FIGS. 4A and 4B respectively show two device configurations for an electric discharge assisted combustion flame. With respect to FIG. 4A, electrodes 32 and 34 are respectively connected to conductor 3
It is connected to a power source 40 via 6 and 38. Figure 4B
, The torch 12 is connected to the power source 40 via the lead wire 40, and the base 14 is connected to the power source 40 via the lead wire 44.
It is connected to the.
【００１３】尚、図示された補助技術自体が、これまで
も、ＣＶＤダイヤモンドの成長／析出を行なう為のプラ
ズマを発生する目的で個々に用いられてきたことは理解
されよう。しかし乍ら、これらの技術は、ＣＶＤダイヤ
モンドの析出／成長を行なう上での燃焼炎の炭素利用率
を改善すべく、燃焼炎を増幅或いは補助することを目的
として用いられたことは無かったのである。It will be appreciated that the illustrated assistive techniques themselves have heretofore been used individually to generate a plasma for the growth / deposition of CVD diamond. However, these techniques have never been used for the purpose of amplifying or assisting the combustion flame in order to improve the carbon utilization rate of the combustion flame in performing the deposition / growth of CVD diamond. is there.
【００１４】尚、上記送出器１６或いは１８は、典型的
には２〜２００ＭＨｚの加熱用ＲＦ範囲の周波数発生を
行なう３極式発振器(triode oscillator) 、或いは、典
型的には約３００〜３０，０００ＭＨｚの加熱用マイク
ロ波を発生するマグネトロン(magnetron) 或いはクリス
トロン(klystron)たり得る。約９１５〜２４５０ＭＨｚ
の周波数は、通常、加熱の目的で使用される。直流放電
或いは無線周波数の電磁放射によるプラズマ発生に関す
る更なる情報は、米国特許第４，７４９，５８７号、
４，７６７，６０８号及び４，８３０，７０２号に見る
ことが出来、又、マイクロ波に関しては米国特許第４，
４３４，１８８号に見ることが出来る。一方、米国特許
第４，７４０，２６３号に依れば、ＣＶＤ分解工程の
間、基体は電子により衝撃を加えられ得ることが示され
ている。The transmitter 16 or 18 is a triode oscillator for generating a frequency in the heating RF range of typically 2 to 200 MHz, or typically about 300 to 30, It may be a magnetron or a klystron which generates a heating microwave of 000 MHz. About 915 to 2450 MHz
This frequency is usually used for heating purposes. For more information on plasma generation by DC discharge or radio frequency electromagnetic radiation, see US Pat. No. 4,749,587.
See US Pat. No. 4,767,608 and US Pat. No. 4,830,702 for microwaves.
See 434,188. On the other hand, US Pat. No. 4,740,263 shows that the substrate can be bombarded with electrons during the CVD decomposition process.
【図１】誘電加熱がマイクロ波発生器及び導波器により
行なわれる、燃焼炎による基体上へのＣＶＤダイヤモン
ド生成法の模式的概略図である1 is a schematic diagram of a method for producing CVD diamond on a substrate by a combustion flame, in which dielectric heating is performed by a microwave generator and a director.
【図２】図１と同様だが、無線周波数コイル（アンテ
ナ）により補助された燃焼炎式析出法の模式的概略図で
あるFIG. 2 is a schematic diagram similar to FIG. 1, but for a combustion flame deposition method assisted by a radio frequency coil (antenna).
【図３】図１と同様だが、燃焼炎に対してＲＦ周波数放
電を印加する環状アンテナを示す模式的概略図であるFIG. 3 is a schematic diagram similar to FIG. 1, but showing an annular antenna for applying an RF frequency discharge to the combustion flame.
【図４】図４Ａは図１と同様だが、燃焼炎によるＣＶＤ
ダイヤモンド析出を補助する交流放電を行なう装置構成
を示す模式的概略図である 図４Ｂは図１と同様だが、燃焼炎によるＣＶＤダイヤモ
ンド析出を補助する直流放電を行なう装置構成を示す模
式的概略図であるFIG. 4A is similar to FIG. 1, but with combustion flame CVD
FIG. 4B is a schematic diagram showing a device configuration for performing AC discharge to assist diamond deposition. FIG. 4B is the same as FIG. 1, but is a schematic schematic diagram showing a device configuration for performing DC discharge to assist CVD diamond deposition by a combustion flame. is there
１０ 燃焼炎 １２ トーチ １４ 基体 １６ マイクロ波発生器 １７ 導波管 １８ 送出器 ２０ コイル（アンテナ） ２２ 導線 ２４ 導線 ２６ 環状アンテナ ２８ 導線 ３０ 導線 ３２ 電極 ３４ 電極 ３６ 導線 ３８ 導線 ４０ 電源 ４２ 導線 ４４ 導線 10 Combustion Flame 12 Torch 14 Base 16 Microwave Generator 17 Waveguide 18 Transmitter 20 Coil (Antenna) 22 Conductive Wire 24 Conductive Wire 26 Annular Antenna 28 Conductive Wire 30 Conductive Wire 32 Electrode 34 Electrode 36 Conductive Wire 38 Conductive Wire 40 Power Supply 42 Conductive Wire 44 44 Conductive Wire
Claims (6)
の気体状混合物を燃焼炎に供することにより上記気体状
混合物を少なくとも部分的に分解してＣＶＤダイヤモン
ドを形成せしめる、ダイヤモンド合成の為の化学蒸着
（ＣＶＤ）方法において、 上記燃焼炎に、誘電加熱、直流放電、或いは、交流放電
の内のひとつ或いはそれ以上のものを加える段階から成
る改良。1. A chemistry for diamond synthesis in which a gaseous hydrocarbon / hydrogen mixture is subjected to a combustion flame in the presence of oxygen to at least partially decompose the gaseous mixture to form a CVD diamond. An improvement in a vapor deposition (CVD) method comprising the step of adding to the combustion flame one or more of dielectric heating, direct current discharge, or alternating current discharge.
或いは無線周波数放電の内のひとつ或いはそれ以上のも
のである、請求項１のＣＶＤ方法。2. The CVD method according to claim 1, wherein the dielectric heating is one or more of microwave frequency discharge and radio frequency discharge.
依るものである、請求項２のＣＶＤ方法。3. The CVD method according to claim 2, wherein the dielectric heating is based on microwave frequency discharge.
り伝達される、請求項３のＣＶＤ方法。4. The CVD method according to claim 3, wherein the microwave frequency discharge is transmitted by a waveguide.
のである、請求項２のＣＶＤ方法。5. The CVD method of claim 2, wherein the dielectric heating is by radio frequency discharge.
ヤモンド形成温度に保たれた基体上に形成される、請求
項１のＣＶＤ方法。6. The CVD method according to claim 1, wherein the CVD diamond is formed on a substrate kept at a CVD diamond forming temperature.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US78268191A | 1991-10-25 | 1991-10-25 | |
| US782681 | 1991-10-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05214533A true JPH05214533A (en) | 1993-08-24 |
Family
ID=25126846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4282115A Withdrawn JPH05214533A (en) | 1991-10-25 | 1992-10-21 | Burning flame-type cvd diamond deposition process aided by microwave or alternating current/direct current discharge |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5464665A (en) |
| EP (1) | EP0539050B1 (en) |
| JP (1) | JPH05214533A (en) |
| KR (1) | KR930007805A (en) |
| AT (1) | ATE127535T1 (en) |
| CA (1) | CA2077773A1 (en) |
| DE (1) | DE69204618T2 (en) |
| ZA (1) | ZA927791B (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6413589B1 (en) | 1988-11-29 | 2002-07-02 | Chou H. Li | Ceramic coating method |
| JPH0827576A (en) * | 1994-07-18 | 1996-01-30 | Canon Inc | Formation of diamond film |
| US5542961A (en) * | 1995-03-28 | 1996-08-06 | Norton Company | Dielectric curing |
| US6286206B1 (en) | 1997-02-25 | 2001-09-11 | Chou H. Li | Heat-resistant electronic systems and circuit boards |
| US5937514A (en) | 1997-02-25 | 1999-08-17 | Li; Chou H. | Method of making a heat-resistant system |
| US6458017B1 (en) | 1998-12-15 | 2002-10-01 | Chou H. Li | Planarizing method |
| US6976904B2 (en) * | 1998-07-09 | 2005-12-20 | Li Family Holdings, Ltd. | Chemical mechanical polishing slurry |
| US6676492B2 (en) | 1998-12-15 | 2004-01-13 | Chou H. Li | Chemical mechanical polishing |
| US6344149B1 (en) | 1998-11-10 | 2002-02-05 | Kennametal Pc Inc. | Polycrystalline diamond member and method of making the same |
| US6503366B2 (en) * | 2000-12-07 | 2003-01-07 | Axcelis Technologies, Inc. | Chemical plasma cathode |
| KR100583500B1 (en) * | 2003-11-14 | 2006-05-24 | 한국가스공사 | Carbon black and hydrogen production process using microwave plasma reactor |
| US20140295094A1 (en) * | 2013-03-26 | 2014-10-02 | Clearsign Combustion Corporation | Combustion deposition systems and methods of use |
| GB201912659D0 (en) | 2019-09-03 | 2019-10-16 | Univ Bristol | Chemical vapor deposition process for producing diamond |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3677799A (en) * | 1970-11-10 | 1972-07-18 | Celanese Corp | Vapor phase boron deposition by pulse discharge |
| GB1592063A (en) * | 1978-05-08 | 1981-07-01 | Chloride Silent Power Ltd | Sodium sulphur cells |
| US4434188A (en) * | 1981-12-17 | 1984-02-28 | National Institute For Researches In Inorganic Materials | Method for synthesizing diamond |
| ATE49023T1 (en) * | 1984-03-03 | 1990-01-15 | Stc Plc | PULSING PLASMA PROCESS. |
| JPS60221395A (en) * | 1984-04-19 | 1985-11-06 | Yoshio Imai | Manufacture of diamond thin film and its use |
| CH664768A5 (en) * | 1985-06-20 | 1988-03-31 | Balzers Hochvakuum | METHOD FOR COATING SUBSTRATES IN A VACUUM CHAMBER. |
| US4673589A (en) * | 1986-02-18 | 1987-06-16 | Amoco Corporation | Photoconducting amorphous carbon |
| US4859490A (en) * | 1986-07-23 | 1989-08-22 | Sumitomo Electric Industries, Ltd. | Method for synthesizing diamond |
| JPS63107898A (en) * | 1986-10-23 | 1988-05-12 | Natl Inst For Res In Inorg Mater | Method for synthesizing diamond with plasma |
| ZA877921B (en) * | 1986-12-22 | 1988-04-21 | General Electric Company | Condensate diamond |
| US5015528A (en) * | 1987-03-30 | 1991-05-14 | Crystallume | Fluidized bed diamond particle growth |
| US4985227A (en) * | 1987-04-22 | 1991-01-15 | Indemitsu Petrochemical Co., Ltd. | Method for synthesis or diamond |
| US4830702A (en) * | 1987-07-02 | 1989-05-16 | General Electric Company | Hollow cathode plasma assisted apparatus and method of diamond synthesis |
| JP2597497B2 (en) * | 1988-01-14 | 1997-04-09 | 洋一 広瀬 | Synthesis method of vapor phase diamond |
| JPH0668152B2 (en) * | 1988-01-27 | 1994-08-31 | 株式会社半導体エネルギー研究所 | Thin film forming equipment |
| US5087434A (en) * | 1989-04-21 | 1992-02-11 | The Pennsylvania Research Corporation | Synthesis of diamond powders in the gas phase |
| US5215788A (en) * | 1990-07-06 | 1993-06-01 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Combustion flame method for forming diamond films |
| EP0491521B1 (en) * | 1990-12-15 | 1997-03-12 | Fujitsu Limited | Process for producing diamond film |
-
1992
- 1992-09-09 CA CA002077773A patent/CA2077773A1/en not_active Abandoned
- 1992-10-06 AT AT92309084T patent/ATE127535T1/en not_active IP Right Cessation
- 1992-10-06 DE DE69204618T patent/DE69204618T2/en not_active Expired - Fee Related
- 1992-10-06 EP EP92309084A patent/EP0539050B1/en not_active Expired - Lifetime
- 1992-10-09 ZA ZA927791A patent/ZA927791B/en unknown
- 1992-10-21 JP JP4282115A patent/JPH05214533A/en not_active Withdrawn
- 1992-10-24 KR KR1019920019692A patent/KR930007805A/en not_active Application Discontinuation
-
1993
- 1993-06-09 US US08/074,197 patent/US5464665A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE69204618D1 (en) | 1995-10-12 |
| EP0539050B1 (en) | 1995-09-06 |
| CA2077773A1 (en) | 1993-04-26 |
| ZA927791B (en) | 1993-07-19 |
| KR930007805A (en) | 1993-05-20 |
| ATE127535T1 (en) | 1995-09-15 |
| US5464665A (en) | 1995-11-07 |
| DE69204618T2 (en) | 1996-03-21 |
| EP0539050A1 (en) | 1993-04-28 |
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