JP7228849B2 - 電子デバイス及びその製造方法 - Google Patents
電子デバイス及びその製造方法 Download PDFInfo
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- JP7228849B2 JP7228849B2 JP2020511593A JP2020511593A JP7228849B2 JP 7228849 B2 JP7228849 B2 JP 7228849B2 JP 2020511593 A JP2020511593 A JP 2020511593A JP 2020511593 A JP2020511593 A JP 2020511593A JP 7228849 B2 JP7228849 B2 JP 7228849B2
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- 238000006243 chemical reaction Methods 0.000 claims description 63
- 238000003384 imaging method Methods 0.000 claims description 51
- 239000004065 semiconductor Substances 0.000 claims description 49
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- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 16
- 230000003321 amplification Effects 0.000 description 15
- 238000003199 nucleic acid amplification method Methods 0.000 description 15
- 239000012535 impurity Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000002955 isolation Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000003860 storage Methods 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 4
- 238000004380 ashing Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000000875 corresponding effect Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- -1 hafnium nitride Chemical class 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
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- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Semiconductor Integrated Circuits (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
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Description
まず、本開示の実施の形態を詳細に説明する前に、本開示の一態様の概要を説明する。本開示の一態様の概要は、以下の通りである。
まず、実施の形態1について、図1を用いて説明する。図1は、本実施の形態に係る電子デバイス10が備える容量素子100及びその近傍の断面図である。
ここで、実施の形態1の変形例について、図2を用いて説明する。図2は、本変形例に係る電子デバイス11が備える容量素子100及びその近傍の断面図である。なお、本変形例の説明において、実施の形態1との相違点を中心に説明し、共通点の説明を省略又は簡略化する。
続いて、実施の形態2について、図3を用いて説明する。図3は、本実施の形態に係る電子デバイス12が備える容量素子200及びその近傍の断面図である。なお、本実施の形態の説明において、実施の形態1及びその変形例との相違点を中心に説明し、共通点の説明を省略又は簡略化する。
続いて、実施の形態3に係る撮像装置について、図5及び図6を用いて説明する。
続いて、実施の形態3の変形例1について、図8を用いて説明する。図8は、本変形例に係る撮像装置16の画素20の断面図である。本変形例の説明において、実施の形態3との相違点を中心に説明し、共通点の説明を省略又は簡略化する。
続いて、実施の形態3の変形例2について、図9を用いて説明する。図9は、本変形例に係る撮像装置17の画素20の断面図である。本変形例の説明において、実施の形態3との相違点を中心に説明し、共通点の説明を省略又は簡略化する。
続いて、実施の形態3の変形例3について、図10を用いて説明する。図10は、本変形例に係る撮像装置18の画素20の断面図である。本変形例の説明において、実施の形態3及びその変形例2との相違点を中心に説明し、共通点の説明を省略又は簡略化する。
以上、1つ又は複数の態様に係る電子デバイスについて、実施の形態に基づいて説明したが、本開示は、これらの実施の形態に限定されるものではない。本開示の主旨を逸脱しない限り、当業者が思いつく各種変形を本実施の形態に施したもの、及び、異なる実施の形態における構成要素を組み合わせて構築される形態も、本開示の範囲内に含まれる。
13、16、17、18 撮像装置
14 画素領域
15 周辺回路領域
20 画素
22 リセットトランジスタ
24 増幅トランジスタ
26 選択トランジスタ
28 転送トランジスタ
30 垂直走査回路
32 水平走査回路
33 出力信号線
34 カラム信号処理回路
36 負荷回路
38 反転増幅器
39 フィードバック線
40 第1電源線
42 第2電源線
44 リセット信号線
46 選択信号線
48 垂直信号線
100、200 容量素子
102 下部電極
104 誘電体層
104a 誘電体膜
106 上部電極
106a 第4導電膜
106b 第5導電膜
120、130 絶縁層
120a 第1絶縁膜
120b 第2絶縁膜
120c 第3絶縁膜
120d 開口
122 トレンチ
124 底部
126 側壁部
130a 第4絶縁膜
130b 第5絶縁膜
130c 第6絶縁膜
140、140a、140b、140c、142 導電プラグ
144 導電層
150 半導体基板
152 分離領域
154 不純物領域
160 多層配線層
162、164、166、172、176 絶縁層
170、174 配線層
171、175 導電線
202 第1下部電極
202a 第2導電膜
202b 第3導電膜
208 第2下部電極
208a 第1導電膜
209 開口部
210 光電変換素子
212 有機光電変換膜
214 画素電極
216 透明電極
Claims (15)
- 容量素子と、
絶縁層と、
前記絶縁層に設けられた少なくとも1つのトレンチと、
少なくとも一部が前記絶縁層に囲まれた第1導電プラグと、を備え、
前記容量素子は、
前記少なくとも1つのトレンチの内壁に沿って設けられた第1下部電極と、
前記第1下部電極上に設けられた誘電体層と、
前記誘電体層上に設けられた上部電極とを含み、
前記第1導電プラグの少なくとも一部は、前記絶縁層の上面と、前記少なくとも1つのトレンチの最下部との間に位置し、
前記容量素子は、さらに、前記絶縁層の前記上面と前記第1下部電極との間に設けられた第2下部電極を含み、
前記第2下部電極には、前記少なくとも1つのトレンチの上部を開口する開口部が設けられ、
前記第1下部電極は、前記少なくとも1つのトレンチの前記内壁と前記第2下部電極とを連続的に覆っている、
電子デバイス。 - 前記少なくとも1つのトレンチは、複数のトレンチを含み、
前記第1下部電極は、前記複数のトレンチの各々の内壁と、前記絶縁層の前記上面とに沿って設けられている、
請求項1に記載の電子デバイス。 - 前記第2下部電極の少なくとも一部は、平面視において、前記第1導電プラグと重なり、
前記第1導電プラグは、前記第2下部電極に接続されている、
請求項1に記載の電子デバイス。 - さらに、
入射した光を電荷に変換する光電変換部と、
前記電荷を蓄積する拡散領域とを備え、
前記第2下部電極は、前記第1導電プラグを介して前記拡散領域と接続されている、
請求項3に記載の電子デバイス。 - 前記光電変換部に接続された画素電極と、
平面視において、前記画素電極と重なり、前記画素電極に接続された第2導電プラグと、
前記第2導電プラグと前記第1導電プラグとを接続する導電層とをさらに備え、
前記光電変換部は、前記容量素子の上方に位置している、
請求項4に記載の電子デバイス。 - 前記導電層の少なくとも一部は、前記少なくとも1つのトレンチの前記最下部と前記第2下部電極との間に位置している、
請求項5に記載の電子デバイス。 - さらに、
半導体基板と、
前記半導体基板の上方に設けられ、複数の絶縁層及び複数の配線層を含む多層配線層とを備え、
前記複数の絶縁層は前記絶縁層を含み、
前記複数の配線層は、前記絶縁層の前記上面と前記半導体基板との間に設けられた第1配線層を含んでいる、
請求項1から6のいずれか1項に記載の電子デバイス。 - 前記電子デバイスは、並んで配置された複数の画素を含む画素領域と、前記複数の画素を駆動するための周辺回路とを備える撮像装置であり、
前記第1配線層は、前記複数の画素のうち2以上の画素に接続され、かつ、前記画素領域の外まで延びている第1信号線の一部を含んでいる、
請求項7に記載の電子デバイス。 - 前記複数の配線層は、前記第1配線層と前記半導体基板との間に設けられた第2配線層をさらに含み、
前記第2配線層は、
前記複数の画素のうち2以上の画素に接続され、かつ、前記画素領域の外まで延びている第2信号線の一部を含んでいる、
請求項8に記載の電子デバイス。 - 前記第1配線層は、前記少なくとも1つのトレンチの前記最下部と前記半導体基板との間に設けられている、
請求項7から9のいずれか1項に記載の電子デバイス。 - 絶縁膜にホールを形成する工程と、
前記ホール内に第1導電プラグを形成する工程と、
前記絶縁膜における前記ホールとは異なる位置に少なくとも1つのトレンチを形成する工程と、
前記トレンチの内壁に沿って容量素子の第1下部電極を形成する工程と、
前記第1下部電極上に前記容量素子の誘電体膜を形成する工程と、
前記誘電体膜上に前記容量素子の上部電極を形成する工程と、
前記第1下部電極を形成する工程の前に、前記絶縁膜上に、前記少なくとも1つのトレンチの上部を開口する開口を有する前記容量素子の第2下部電極を形成する工程と、を含み、
前記第1下部電極は、前記少なくとも1つのトレンチの前記内壁と前記第2下部電極とを連続的に覆うように形成される、
電子デバイスの製造方法。 - 前記少なくとも1つのトレンチは、複数のトレンチを含み、
前記第1下部電極は、前記複数のトレンチの各々の内壁と、前記絶縁膜の上面とに沿って設けられる、
請求項11に記載の電子デバイスの製造方法。 - 前記トレンチは、前記開口を有する前記第2下部電極をマスクとして、前記絶縁膜をエッチングすることにより形成される、
請求項11に記載の電子デバイスの製造方法。 - 前記第2下部電極は、前記第1導電プラグに接続される、
請求項13に記載の電子デバイスの製造方法。 - さらに、
画素電極を形成する工程と、
前記画素電極を覆うように有機光電変換膜を形成する工程と、を含む、
請求項11から14のいずれか1項に記載の電子デバイスの製造方法。
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